P. Mårtensson

发表

Drift correction for gas sensors using multivariate methods

M. Sjöström, T. Artursson, T. Eklöv, 2000 .

Enhanced selectivity of MOSFET gas sensors by systematical analysis of transient parameters

T. Eklöv, I. Lundström, P. Mårtensson, 1997 .

Selection of variables for interpreting multivariate gas sensor data

T. Eklöv, I. Lundström, P. Mårtensson, 1999 .

Continuous monitoring of yoghurt fermentation using a noble metal electrode array

P. Mårtensson, F. Winquist, C. Krantz-Rülcker, 2009 .

Estimation of biomass and specific growth rate in a recombinant Escherichia coli batch cultivation process using a chemical multisensor array.

P. Mårtensson, T. Bachinger, C. Mandenius, 1998, Journal of biotechnology.

Influence of the concentration of ZrCl4 on texture, morphology and growth rate of CVD grown α-Al2O3 coatings deposited by the AlCl3/ZrCl4/H2/CO2/H2S process

P. Mårtensson, 2006 .

Atomic Layer Epitaxy of Copper on Tantalum

P. Mårtensson, J. Carlsson, 1997 .

Development of a ChemFET sensor with molecular films of porphyrins as sensitive layer

R. Paolesse, C. Natale, A. D'Amico, 2001 .

Pt/CeO2 SIC Schottky diodes with high response to hydrogen and hydrocarbons

A. Spetz, I. Lundström, P. Mårtensson, 2001 .

Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures

M. Ritala, M. Leskelä, P. Mårtensson, 1999 .

Scanning tunneling microscopy study of SiC(0001) surface reconstructions

P. Mårtensson, F. Owman, Fredrik Owman, 1996 .

In situ substrate preparation for high-quality SiC chemical vapour deposition

A. Ellison, E. Janzén, P. Mårtensson, 1997 .

GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION

I. Ivanov, P. Mårtensson, L. Hultman, 1995 .

STM study of Si(111)1 × 1-H surfaces prepared by in situ hydrogen exposure

P. Mårtensson, F. Owman, 1994 .

The SiC(0001)6√3 × 6√3 reconstruction studied with STM and LEED

P. Mårtensson, F. Owman, Fredrik Owman, 1996 .

STM study of hydrogen exposure of the Si(111)√3 × √3-In surface

P. Mårtensson, F. Owman, 1996 .

STM study of the SiC(0001) √3 × √3 surface

P. Mårtensson, F. Owman, Fredrik Owman, 1995 .

Surface state on the SiC(0001)-(√3 × √3) surface

P. Mårtensson, L. Johansson, F. Owman, 1996 .

Electronic structure of Si(111) surfaces with group III ad-atoms

P. Mårtensson, R. Uhrberg, G. V. Hansson, 1986 .

INFLUENCE OF CATALYTIC REACTIVITY ON THE RESPONSE OF METAL-OXIDE-SILICON CARBIDE SENSOR TO EXHAUST GASES

Ingemar Lundström, Anita Lloyd Spetz, Per Mårtensson, 1999 .

Fast Chemical Sensors for Emission Control

Ingemar Lundström, Anita Lloyd Spetz, Per Mårtensson, 1998, The Electrochemical Society Interface.

Response of metal–insulator–silicon carbide sensors to different components in exhaust gases

I. Lundström, P. Mårtensson, P. Salomonsson, 1998 .

STM study of structural defects on in situ prepared Si(111) 1 × 1-H surfaces

P. Mårtensson, F. Owman, 1995 .

Voltage‐dependent imaging of antimony on the GaAs(110) surface

P. Mårtensson, R. Feenstra, 1988 .

Spectroscopy of Metal Adsorbates on the GaAs(110) Surface Studied with the Scanning Tunneling Microscope

P. Mårtensson, R. Feenstra, R. Ludeke, 1988 .

Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(110) Surface by Scanning Tunneling Spectroscopy

P. Mårtensson, R. Feenstra, J. Stroscio, 1989 .

Influence of carbon monoxide, water and oxygen on high temperature catalytic metal-oxide-silicon carbide structures

Ingemar Lundström, Anita Lloyd Spetz, Shinji Nakagomi, 1997 .

On-Line Detection of Microbial Contaminations in Animal Cell Reactor Cultures Using an Electronic Nose Device

Carl-Fredrik Mandenius, Jan Mitrovics, João J. Clemente, 2005, Cytotechnology.

Response of metal-oxide-silicon carbide sensors to simulated and real exhaust gases

Ingemar Lundström, Anita Lloyd Spetz, Jan Nytomt, 1997 .

Occupied and unoccupied surface states on the Si(111)√3×√3:B surface

P. Mårtensson, G. Tm, Nicholls Jm, 1992 .

Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H2 process II.Reaction energies

P. Mårtensson, J. Carlsson, K. Larsson, 1999 .

Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H2 process I. Adsorption of CuCl on Cu(111)

P. Mårtensson, J. Carlsson, K. Larsson, 1998 .

Atomic Layer Epitaxy of Copper

P. Mårtensson, 1999 .

Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces

Leif I. Johansson, Per Mårtensson, P. Mårtensson, 1997 .

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

E. Janzén, P. Mårtensson, C. Hallin, 1996 .

A photoemission study of 4HSiC(0001)

P. Mårtensson, L. Johansson, F. Owman, 1996 .

HALIDE CHEMICAL-VAPOR-DEPOSITION OF BI2SR2CACU2O8+X - ASPECTS OF EPITAXY

A. Hårsta, P. Mårtensson, 1995 .

Inequivalent atoms and imaging mechanisms in ac-mode atomic-force microscopy of Si(111)7 x 7.

P. Mårtensson, Olsson, R. Erlandsson, 1996, Physical review. B, Condensed matter.

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

S. Nakagomi, I. Lundström, P. Mårtensson, 1997 .

Evaluation of on-line flue gas measurements by MISiCFET and metal-oxide sensors in boilers

I. Lundstrom, M. Holmberg, T. Artursson, 2005, IEEE Sensors Journal.

Current status of silicon carbide based high-temperature gas sensors

Ingemar Lundström, Per Mårtensson, Peter Tobias, 1999 .

MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications

H. Wingbrant, I. Lundström, P. Mårtensson, 2002 .

Evaluation of on-line hot flue gas measurements

Ingemar Lundström, Anita Lloyd Spetz, Per Mårtensson, 2001 .

Electronic structure of 6H-SiC(0001).

Johansson, P. Mårtensson, U. Lindefelt, 1996, Physical Review B (Condensed Matter).