M. Mastrapasqua

发表

Compact modeling of thermal resistance in bipolar transistors on bulk and SOI substrates

P. Palestri, A. Pacelli, M. Mastrapasqua, 2002 .

Electron and hole impact ionization in deep sub-micron MOSFETs

J. Bude, M. Mastrapasqua, 1995 .

Impact ionization and distribution functions in sub-micron nMOSFET technologies

J. Bude, M. Mastrapasqua, 1995, IEEE Electron Device Letters.

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

L. Selmi, C. Fiegna, D. Esseni, 2001 .

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

L. Selmi, C. Fiegna, D. Esseni, 2003 .

Temperature and channel-length dependence of impact ionization in p-channel MOSFETs

K. F. Lee, J. Bude, M. Mastrapasqua, 1994, Proceedings of 1994 VLSI Technology Symposium.

An experimental study of low field electron mobility in double-gate, ultra-thin SOI MOSFETs

L. Selmi, C. Fiegna, D. Esseni, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Measurements of low field mobility in ultra-thin SOI n- and p-MOSFETs

L. Selmi, C. Fiegna, D. Esseni, 2001 .

Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

L. Selmi, C. Fiegna, D. Esseni, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

High performance RF power LDMOSFET technology for 2.1GHz power amplifier applications

M. Mastrapasqua, Shuming Xu, H. Safar, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

M. Mastrapasqua, S. Moinian, T.-I. Hsu, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI

P. Palestri, W. Lin, A. Pacelli, 2002, IEEE Electron Device Letters.

COM2 enhanced graded base SiGe technology for high speed applications

P. Smith, R. Johnson, T. Sorsch, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Device simulation for advanced Si/sub 1-x/Ge/sub x/ HBTs

P. Palestri, A. Pacelli, M. Mastrapasqua, 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).

Mobility in Single and Double Gate Ultra-Thin SOI MOSFETs

L. Selmi, C. Fiegna, D. Esseni, 2001 .

(PS)2: a new semiconductor device for positron-sensitive picosecond detection of single optical photons

S. Cova, M. Mastrapasqua, M. Ghioni, 1991 .

A Drift-Diffusion/Monte Carlo Simulation Methodology for Si Ge HBT Design

Pierpaolo Palestri, M. Mastrapasqua, Andrea Pacelli, 2002 .

Verification of electron distributions in silicon by means of hot carrier luminescence measurements

Luca Selmi, D. M. Boulin, Enrico Sangiorgi, 1998 .

Impact ionization and real-space transfer of minority carriers in charge injection transistors

S. Luryi, M. Mastrapasqua, C. Canali, 1994, IEEE Electron Device Letters.

P2F-3 Three Dimensional Periodic Finite Element Analysis of Solidly Mounted Resonators

M. Mastrapasqua, Y. Yong, H. Safar, 2007, 2007 IEEE Ultrasonics Symposium Proceedings.

Strong dependence of time resolution on detector diameter in single photon avalanche diodes

Andrea L. Lacaita, M. Mastrapasqua, A. Lacaita, 1990 .

Characterization of tunneling current in ultra-thin gate oxide

Enrico Sangiorgi, M. Mastrapasqua, A. Ghetti, 2000 .

Functional devices based on real space transfer in Si/SiGe structure

P. Smith, M. Mastrapasqua, C. King, 1996 .

Monte Carlo simulation of impact ionization in SiGe HBTs

J. Bude, P. Palestri, A. Pacelli, 2001, IEEE Electron Device Letters.

Propagating avalanche position-sensitive photon detector with resolution in the micrometer and picosecond range

S. Cova, M. Mastrapasqua, M. Ghioni, 1992, IEEE Electron Device Letters.

Observation of avalanche propagation by multiplication assisted diffusion in p‐n junctions

Andrea L. Lacaita, Massimo Ghioni, M. Mastrapasqua, 1990 .

Ultra Thin Single and Double-Gate MOSFETs for Future ULSI Applications: Measurements, Simulations and Open Issues

C. Fiegna, D. Esseni, M. Mastrapasqua, 2002 .

Charge Injection Devices

S. Luryi, M. Mastrapasqua, 1999 .

Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures

S. Luryi, G. Belenky, M. Mastrapasqua, 1993 .

Light-emitting transistor based on real-space transfer: electrical and optical properties

S. Luryi, F. Capasso, M. Mastrapasqua, 1993 .

Light Emitting Logic Devices Based on Real Space Transfer in Complementary InGaAs/InAlAs Heterostructures

S. Luryi, M. Mastrapasqua, 1993 .

Light emitting charge injection transistor with p‐type collector

S. Luryi, F. Capasso, M. Mastrapasqua, 1992 .

Collector-up light-emitting charge injection transistors in n-lnGaAs / lnAIAs / plllnGaAs and n-lnGaAs / lnP / p-InGaAs heterostructures

S. Luryi, G. Belenky, M. Mastrapasqua, 1999 .

Characterization and modeling of hot-carrier luminescence in silicon n/sup +//n/n/sup -/ devices

J. Bude, L. Selmi, E. Sangiorgi, 1995, Proceedings of International Electron Devices Meeting.