Kyoung-Rok Han

Highly scalable saddle MOSFET for high-density and high-performance DRAM

Jong-Ho Lee, Ki-Heung Park, Kyoung-Rok Han, 2005 .

The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Kyoung-Rok Han, Jong-Ho Lee, Sung-Min Joe, 2012, IEEE Transactions on Electron Devices.

Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure

Byung-Gook Park, Kyoung-Rok Han, Jong-Ho Lee, 2012, 2012 International Electron Devices Meeting.

Negative Bias Temperature Instability of Bulk Fin Field Effect Transistor

Kyoung-Rok Han, Byung-Kil Choi, Jong-Ho Lee, 2006 .

5-bit/cell Characteristics using mixed program/erase mechanism in recessed channel non-volatile memory cells

Jong-Ho Lee, Kyoung-Rok Han, I. Cho, 2010 .

Temperature Dependence of Substrate and Drain–Currents in Bulk FinFETs

Young Min Kim, Kyoung-Rok Han, Byung-Kil Choi, 2007, IEEE Transactions on Electron Devices.

A new read method suppressing effect of random telegraph noise in NAND flash memory by using hysteretic characteristic

Byung-Gook Park, Kyoung-Rok Han, Jong-Ho Lee, 2013, 2013 Symposium on VLSI Technology.

New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory

Myounggon Kang, Kyoung-Rok Han, Jong-Ho Lee, 2012, IEEE Electron Device Letters.

Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Jong-Ho Lee, Ki-Heung Park, Kyoung-Rok Han, 2007 .