H. Hughes

发表

Radiation Effects in 3D Integrated SOI SRAM Circuits

peixiong zhao, P. Gouker, B. Tyrrell, 2011, IEEE Transactions on Nuclear Science.

Radiation effects and hardening of MOS technology: devices and circuits

H. Hughes, J. Benedetto, 2003 .

H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models

H. L. Hughes, R. K. Lawrence, Robert E. Stahlbush, 1998 .

Comparison of charge trapping in undoped oxides made by low- and high-temperature deposition techniques

H. L. Hughes, Patrick J. McMarr, R. K. Lawrence, 2001 .

H+ Motion in SO2: Incompatible Results from Hydrogen- Annealing and Radiation Models'

H. Hughes, R. Stahlbush, R. Lawrence, 1998 .

The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies

Zachary E. Fleetwood, Mason T. Wachter, George N. Tzintzarov, 2016, 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

S. Gausepohl, M. Alles, E. Zhang, 2013, IEEE Transactions on Nuclear Science.

Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits

S. Buchner, D. Mcmorrow, P. McMarr, 2015, IEEE Transactions on Nuclear Science.

Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities

H. Hughes, R. Baxter, B. Phillips, 1972 .

Optimization of SIMOX for VLSI by electrical characterization

H. Hughes, S. Cristoloveanu, D. Ioannou, 1991 .

The structural aspects of non-crystalline SiO2 films on silicon: a review

H. Hughes, A. Revesz, 2003 .

H. Hughes, W. Carlos, R. Stahlbush, 1993 .

CMOS Scaling Implications for Total Dose Radiation

H. L. Hughes, R. K. Reich, J. W. Schrankler, 1985, IEEE Transactions on Nuclear Science.

Radiation Effects in MOS VLSI Structures

H. Hughes, 1988 .

Total Dose Radiation-Bias Effects in Laser-Recrystallized SOI MOSFET's

H. L. Hughes, G. E. Davis, T. I. Kamins, 1982, IEEE Transactions on Nuclear Science.

Radiation Hardness of LSI/VLSI Fabrication Processes

H. Hughes, 1979, IEEE Transactions on Nuclear Science.

Proton Induced Single Event Upset in 6 T SOI SRAMs

M.S. Liu, H. Hughes, M. Liu, 2006, IEEE Transactions on Nuclear Science.

Proton-induced upset in SOI CMOS SRAMS

S.T. Liu, H. Hughes, A. Campbell, 2004, IEEE Transactions on Nuclear Science.

S. T. Liu, H. Hughes, D. Ioannou, .

Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs

P. McMarr, H. Hughes, R. Devine, 2015 .

MECHANISM FOR SI ISLAND RETENTION IN BURIED SIO2 LAYERS FORMED BY OXYGEN ION IMPLANTATION

A. Stesmans, H. Hughes, A. Revesz, 1997 .

Buried oxide inhomogeneity in low-dose SIMOX structures

A. Stesmans, H. Hughes, A. Revesz, 1997, 1997 IEEE International SOI Conference Proceedings.

Structural inhomogeneity and silicon enrichment of buried SiO2 layers formed by oxygen ion implantation in silicon

A. Stesmans, H. Hughes, A. Revesz, 1997 .

Improvement in electrical properties of SIMOX by high-temperature oxidation

P. McMarr, H. Hughes, B. Mrstik, 1995, 1995 IEEE International SOI Conference Proceedings.

Time dependence power laws of hot carrier degradation in SOI MOSFETS

H. Hughes, D. Ioannou, F. Duan, 1996, 1996 IEEE International SOI Conference Proceedings.

Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of ${\hbox{0.18-}}\mu\hbox{m}$ CMOS Technology

P. McMarr, H. Hughes, N. Roche, 2015, IEEE Transactions on Nuclear Science.

Effects of gamma radiation on charge‐coupled devices

H. Hughes, J. Killiany, D. Barbe, 1973 .

On the effect of hot-carrier stressing on MOSFET terminal capacitances

M. Peckerar, H. Hughes, C. Yao, 1988 .

A New Approach for Single-Event Effects Testing With Heavy Ion and Pulsed-Laser Irradiation: CMOS/SOI SRAM Substrate Removal

M. Liu, S. Buchner, D. Mcmorrow, 2010, IEEE Transactions on Nuclear Science.

Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures

H. Hughes, G. Pollack, G. Davis, 1987, IEEE Transactions on Nuclear Science.

The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures

H. Hughes, A. Revesz, 1995 .

Fabrication of Bond and Etch Back Silicon on Insulator Using SiGe-MBE and Selective Etching Techniques

H. Hughes, K. Hobart, M. Twigg, 1991 .

A Si0.7Ge0.3 strained‐layer etch stop for the generation of thin layer undoped silicon

H. Hughes, M. Twigg, F. Kub, 1990 .

A Si/sub 0.7/Ge/sub 0.3/ strained layer etch stop for the generation of bond and etch back SOI

H. Hughes, M. Twigg, F. Kub, 1989, IEEE SOS/SOI Technology Conference.

Electron spin resonance of defects in silicon‐on‐insulator structures formed by oxygen implantation: Influence of γ irradiation

A. Stesmans, H. Hughes, A. Revesz, 1991 .

A 5 nm nitrided gate oxide for 0.25 /spl mu/m SOI CMOS technologies

S. T. Liu, H. Hughes, S. Sinha, 1999 .

Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics

H. Hughes, G. Lucovsky, K. Chung, 2011 .

Irradiation-induced ESR active defects in SIMOX structures

H. Hughes, R. Devine, Á. Révész, 1990 .

Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides

H. Hughes, M. Zvanut, C. Benefield, 1994 .

Stark effect of SiOH and SiH molecules in SiO2

E. Palik, H. Hughes, R. Holm, 1982 .

Properties of Buried SiO2 Films in Simox Structures

H. Hughes, A. Revesz, G. Brown, 1992 .

14-MeV Neutron and Gamma Testing of a Power MOSFET Optocoupler

K. Delikat, P. McMarr, H. Hughes, 2003 .

Deuterium interactions with ion‐implanted SiO2 layers in silicon

H. Hughes, A. Revesz, S. Myers, 1993 .

Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

H. Hughes, M. Twigg, L. Palkuti, 1990 .

TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe2

H. Hughes, H. Bakhru, J. U. Lee, 2018, IEEE Transactions on Nuclear Science.

The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS

H. Hughes, D. Ioannou, P. Mclarty, 1990 .

Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated Current

A. Agarwal, P. McMarr, H. Hughes, 2010 .

On the Mechanism of Interaction Between 18 O 2 Gas and Noncrystalline SiO2

H. Hughes, B. Mrstik, A. Revesz, 1987 .

Structure of SiO2 Films on Silicon as Revealed by Oxygen Transport

H. Hughes, B. Mrstik, A. Revesz, 1986 .

Radiation effects on the magnetism and the spin dependent transport in magnetic materials and nanostructures for spintronic applications

E. Chen, S. Wolf, P. McMarr, 2015 .

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

H. Hughes, J. U. Lee, Prathamesh A. Dhakras, 2018, Scientific Reports.

A study of the radiation sensitivity of non-crystalline SiO/sub 2/ films using spectroscopic ellipsometry

P. McMarr, H. Hughes, R. Lawrence, 1998 .

The use of spectroscopic ellipsometry to predict the radiation response of SIMOX

P. McMarr, H. Hughes, R. Lawrence, 1994 .

Hot-electron-induced degradation of front and back channels in partially and fully depleted SIMOX MOSFETs

H. Hughes, S. Cristoloveanu, D. Ioannou, 1992, IEEE Electron Device Letters.

Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique

H. Hughes, B. Mazhari, D. Ioannou, 1991, IEEE Electron Device Letters.

The structure of thermally grown noncrystalline SiO2 films on silicon

H. Hughes, A. Revesz, 1985 .

Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation

Harold L. Hughes, Cory D. Cress, H. Hughes, 2015, IEEE Transactions on Nuclear Science.

Creation of Individual Defects at Extremely High Proton Fluences in Carbon Nanotube $p{-}n$ Diodes

P. McMarr, H. Hughes, H. Bakhru, 2011, IEEE Transactions on Nuclear Science.

Structural and Strain‐Related Effects during Growth of SiO2 Films on Silicon

A. G. Revesz, H. L. Hughes, B. J. Mrstik, 1987 .

Thermal Oxidation of Silicon

H. Hughes, B. Mrstik, A. Revesz, 1988 .

Effects of heat treatments in inert ambients on Si/SiO2 structures

H. Hughes, A. Revesz, 1999 .

Incorporation of Deuterium into the Buried Oxide of Simox Structures

H. Hughes, A. Revesz, G.A. Brown, 1992, 1992 IEEE International SOI Conference.

Density gradient in SiO2 films on silicon as revealed by positron annihilation spectroscopy

H. Hughes, W. Skorupa, G. Brauer, 2002 .

Energy levels of electrons trapped in buried oxide of SIMOX structures

V.V. Afanas'ev, A.G. Revesz, W. Jenkins, 1995, 1995 IEEE International SOI Conference Proceedings.

Photo-injection study of SIMOX structures with supplemental oxygen implant

H. Hughes, A. Revesz, V.V. Afans'ev, 1994, Proceedings. IEEE International SOI Conference.

Depth profiles of aluminum and sodium near surfaces: Nuclear resonance method☆

W. H. Lucke, K. L. Dunning, H. Hughes, 1973 .

Impurity Depth Profiles by Microanalysis Techniques

K. L. Dunning, H. Hughes, 1972 .

Radiation Studies of Spin-Transfer Torque Materials and Devices

R. A. Reed, K. Bussmann, H. Hughes, 2012, IEEE Transactions on Nuclear Science.

Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology

S. T. Liu, H. L. Hughes, W. C. Jenkins, 1998 .

Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers

H. Hughes, C. Cress, J. U. Lee, 2017, IEEE Transactions on Nuclear Science.

Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface

H. Hughes, 1969 .

Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements

Harold L. Hughes, M. Simons, H. Hughes, 1972 .

Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon

H. L. Hughes, N. S. Saks, R. K. Lawrence, 1988 .

Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process

B. Narasimham, B.L. Bhuva, D. McMorrow, 2009, IEEE Transactions on Nuclear Science.

Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

Dimitris E. Ioannou, H. L. Hughes, P. K. McLarty, 1988 .

Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells

H. Hughes, M. Peckerar, E. Kanyogoro, 2008 .

Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide

W. H. Lucke, H. Hughes, J. Comas, 1972 .

GROWTH AND STRUCTURE OF NONCRYSTALLINE SiO2 FILMS ON SILICON

H. Hughes, B. Mrstik, A. Revesz, 1985 .

A new MOS radiation-induced charge: negative fixed interface charge

A. G. Revesz, Harold L. Hughes, H. Hughes, 1992 .

The role of nanoclusters in reducing hole trapping in ion implanted oxides

H. L. Hughes, Patrick J. McMarr, R. K. Lawrence, 2003 .

Hole and electron trapping in ion implanted thermal oxides and SIMOX

H. L. Hughes, R. A. Walker, Patrick J. McMarr, 2000 .

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood, Mason T. Wachter, George N. Tzintzarov, 2018, IEEE Transactions on Nuclear Science.

Radiation induced charge in SIMOX buried oxides: lack of thickness dependence at low applied fields

P. McMarr, H. Hughes, R. Lawrence, 1997 .

Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

H. Hughes, J. U. Lee, Prathamesh A. Dhakras, 2018, Scientific Reports.

Surface Effects of Space Radiation on Silicon Devices

Harold L. Hughes, H. Hughes, 1965 .

Rapid Annealing of Pulse‐Radiation‐Induced Space Charge in Silicon Dioxide

H. Hughes, M. Simons, 1971 .

Short-Term Charge Annealing in Electron-Irradiated Silicon Dioxide

H. Hughes, M. Simons, 1971 .

SIMOX with epitaxial silicon: point defects and positive charge

H. Hughes, W. Carlos, R. Stahlbush, 1991 .

A Survey of Radiation-Induced Perturbations in Metal-Insulator-Semiconductor Structures

H. Hughes, 1971 .

Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications

H. L. Hughes, Patrick J. McMarr, B. J. Mrstik, 1996 .

Silicon-on-sapphire films with negative and positive interfacial charges

James L. Repace, H. Hughes, A. Christou, 1981 .

SiH and SiOH electromodulation at SiSiO2 interfaces in a multiple internal reflectance configuration

E. Palik, H. Hughes, L. Miglio, 1983 .

Confinement Phenomena in Buried Oxides of SIMOX Structures as Affected by Processing

H. Hughes, A. Revesz, V. Afanas'ev, 1996 .

Deep and Shallow Electron Trapping in the Buried Oxide Layer of SIMOX Structures

H. Hughes, A. Revesz, V. Afanas'ev, 1994 .