D. Roulston

发表

Electron and hole mobilities in silicon as a function of concentration and temperature

J. Hauser, N. Arora, D. Roulston, 1982, IEEE Transactions on Electron Devices.

Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors

D. Roulston, A. Sadovnikov, 1993 .

Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n+-p silicon diodes

S. G. Chamberlain, N. Arora, D. Roulston, 1982, IEEE Transactions on Electron Devices.

Miller's approximation in advanced bipolar transistors under nonlocal impact ionization conditions

M. J. Kumar, D. Roulston, 1994 .

Collector design tradeoffs for low voltage applications of advanced bipolar transistors

M. J. Kumar, D. Roulston, A. Sadovnikov, 1993 .

Voltage- and current-dependent model for the base resistance of bipolar transistors

D. J. Roulston, D. Roulston, F. Hébert, 1988 .

Early voltage in very-narrow-base bipolar transistors

D. Roulston, D.J. Roulston, 1990, IEEE Electron Device Letters.

IC-VCE characteristics of double diffused bipolar transistors under low level injection

David J. Roulston, D. Roulston, D. Scott, 1980 .

A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

David J. Roulston, S. C. Jain, D. Roulston, 1991 .

Modelling the bipolar transistor

D. Roulston, D.J. Roulston, 1979, IEEE Transactions on Electron Devices.

A simple expression for ECL propagation delay including non-quasi-static effects

J. M. McGregor, David J. Roulston, S. C. Jain, 1993 .

Transistor design for predictable power gain at maximum frequency

D. Roulston, J. McGregor, 1992 .

Some properties concerning the a.c. impedance of P-I-N and P-N-N+ diodes

S. G. Chamberlain, D. Roulston, R. Varshney, 1974 .

Trade-off between emitter resistance and current gain in polysilicon emitter bipolar transistors with intentionally grown interfacial oxide layers

J. S. Hamel, D. Roulston, C. Selvakumar, 1992, IEEE Electron Device Letters.

Transient behaviour of a range of P + - N- N + diodes with narrow centre regions

D. Roulston, R. Varshney, 1970 .

Effective base-collector time constants for calculating the maximum oscillation frequency of bipolar transistors

D. Roulston, M. Vaidyanathan, 1995 .

Two-dimensional simulation of a high-voltage p-i-n diode with overhanging metallization

S. G. Chamberlain, D. Roulston, R. Kumar, 1981, IEEE Transactions on Electron Devices.

Frequency multipilier using a charge-storage diode in an inductive circuit

D. Roulston, 1967 .

Simplified modelling of delays in the emitter-base junction

D. Roulston, K. Negus, 1988 .

Study of thin oxide tunnel parameters for polysilicon emitters, using computer simulation and experimental results

D. Roulston, P. Ashburn, G. Booker, 1990 .

Photodetector modeling for optical receivers integrated in a silicon process

J. S. Hamel, D. Roulston, J. McGregor, 1993 .

Recent advances in the physics of silicon P-N junction solar cells including their transient response

D. Roulston, E. Heasell, S. Jain, 1987 .

Band-to-band and free-carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature

D. Roulston, S. Jain, A. Nathan, 1991 .

Self-aligned V-groove etched devices

D. Roulston, A. Solheim, F. Hébert, 1989 .

Current dependence of forward delay time of bipolar transistors

D. J. Roulston, F. Hébert, D. Roulston, 1986 .

Base component of gain and delay time in base-implanted bipolar transistors☆

David J. Roulston, M. I. Elmasry, M. Elmasry, 1981 .

Generation and sensitivity of input/output DC plots

Ibrahim N. Hajj, P. R. Bryant, D. J. Roulston, 1979 .

Diffusion length determination in p‐n junction diodes and solar cells

N. D. Arora, D. J. Roulston, S. G. Chamberlain, 1980 .

Distribution profiles of diffused layers in silicon

N. Arora, D. Roulston, S. Chamberlain, 1982 .

Silicon bipolar transistors with negative and positive current gain temperature dependence and output conductance on the same monolithic chip

D. Roulston, F. Hébert, 1988 .

BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS

J. M. McGregor, David J. Roulston, S. C. Jain, 1990 .

New buried P+-grid polysilicon emitter bipolar power transistor

D. Roulston, M.J. Kumar, 1995 .

Modified simple expression for bandgap narrowing in n-type GaAs

D. Roulston, S. Jain, P. Balk, 1992 .

Two-dimensional analysis of emitter resistance in the presence of interfacial oxide breakup in polysilicon emitter bipolar transistors

J. S. Hamel, D. Roulston, C. Selvakumar, 1992 .

The perforated emitter contact effect

J. S. Hamel, D. Roulston, C. Selvakumar, 1992, IEEE Electron Device Letters.

Trade-off Between Emitter Gain in Polysilicon Resistance and Current Emitter Bipolar Transistors with Intentionally

J. S. Hamel, D. Roulston, 1992 .

Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors

D. Roulston, P. Ashburn, C. Selvakumar, 1987, IEEE Transactions on Electron Devices.

VBIC95, the vertical bipolar inter-company model

C. C. McAndrew, L. F. Wagner, M. Schroter, 1996, IEEE J. Solid State Circuits.

Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

J. M. McGregor, T. Manku, David J. Roulston, 1993 .

Effective recombination velocity of low-high junctions

David J. Roulston, C. R. Selvakumar, S. C. Jain, 1988 .

Reverse-bias characteristics of a P+-N-N+ photodiode

D. Roulston, J. Tandon, S. Chamberlain, 1972 .

Optimization of maximum oscillation frequency of a bipolar transistor

D. Roulston, F. Hébert, 1987 .

The role of the interfacial layer in polysilicon emitter bipolar transistors

D. Roulston, D.J. Roulston, A.A. Eltoukhy, 1982, IEEE Transactions on Electron Devices.

Comparison of the optimum base width for ECL propagation delay and maximum oscillation frequency

D. Roulston, M. Vaidyanathan, 1995 .

Experimental method for extraction of emitter injection limited gain in bipolar transistors

J. S. Hamel, D. Roulston, C. Selvakumar, 1992 .

Modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors

D. Roulston, N. Chamberlain, 1976, IEEE Transactions on Electron Devices.

Polysilicon emitter bipolar transistors

David J. Roulston, Ashok K. Kapoor, A. Kapoor, 1989 .

Bipolar Semiconductor Devices

David J. Roulston, D. Roulston, 1990 .

Accurate two-dimensional simulation of double-beveled p−n junctions

D. Roulston, R. Kumar, S. Chamberlain, 1981 .

Computer-aided analysis of nonlinear JFET amplifiers from device fabrication data

Ibrahim N. Hajj, P. R. Bryant, D. J. Roulston, 1978 .

Peripheral emitter—Base junction capacitance in bipolar transistors

D. Roulston, D.J. Roulston, R.C. Kumar, 1979, IEEE Transactions on Electron Devices.

An efficient method for the analysis of the space-charge region of diffused junctions

D. Roulston, A. Eltoukhy, 1982 .

Spectral response limitation mechanisms of a shallow junction n + -p photodiode

D. Roulston, S. P. Desai, S. Chamberlain, 1978 .

Spectral response limitation mechanisms of a shallow junction n+-p photodiode

D. Roulston, S. P. Desai, S. Chamberlain, 1978, IEEE Transactions on Electron Devices.

Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies

David J. Roulston, François Hébert, D. Roulston, 1988 .