H. Esaki

A mobility model for submicrometer MOSFET device simulations

S. Odanaka, A. Hiroki, K. Ohe, 1987, IEEE Electron Device Letters.

A high-power high-gain VD-MOSFET operating at 900 MHz

H. Esaki, O. Ishikawa, H. Esaki, 1987, IEEE Transactions on Electron Devices.

A 900 MHz 100 W VD-MOSFET with silicide gate self-aligned channel

H. Esaki, O. Ishikawa, 1984, 1984 International Electron Devices Meeting.

Effect of nitrogen distribution in nitrided oxide prepared by rapid thermal annealing on its electrical characteristics

H. Esaki, T. Hori, H. Iwasaki, 1987 .

Quantum jump and “kaizen” toward commercialization of ferroelectric ULSI memories

H. Esaki, 1997 .

Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation

H. Esaki, T. Hori, H. Iwasaki, 1987, IEEE Transactions on Electron Devices.

Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealing

H. Esaki, T. Hori, H. Iwasaki, 1986, IEEE Electron Device Letters.

Numerical modeling of nonplanar oxidation coupled with stress effects

Shinji Odanaka, Hiroyuki Umimoto, Hideya Esaki, 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..