J. Dorkel

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

J. Dorkel, P. Leturcq, 1981 .

A two-port network formalism for 3D heat conduction analysis in multilayered media

J. Dorkel, P. Leturcq, S. Tounsi, 1993 .

Thermo-sensitive snapback behavioral model intended for electro-thermal simulation of power MOSFETs

J. Dorkel, H. Dia, P. Tounsi, 2010, 2010 16th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).

Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications

P. Vales, Gerard Coquery, A. Hamidi, 1998 .

Interest of surface treatment at gate oxide level for power MOSFETs quality and reliability

J. Dorkel, P. Tounsi, J. Reynes, 2011, ICM 2011 Proceeding.

Potentialities of silicon piezoresistivity for mechanical state monitoring of VDMOS transistors

J. Dorkel, A. Bourennane, P. Tounsi, 2009, 2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems.

Improved 3D-nonlinear compact modelling for power components

W. Habra, P. Tounsi, J.-M. Dorkel, 2005, EuroSimE 2005. Proceedings of the 6th International Conference on Thermal, Mechanial and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems, 2005..

On electrical transport in non-isothermal semi-conductors

J. Dorkel, J. M. Dorkel, 1983 .

Source electrode evolution of a low voltage power MOSFET under avalanche cycling

Jean-Marie Dorkel, René Escoffier, B. Bernoux, 2009, Microelectron. Reliab..

Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations

Patrick Tounsi, A. Bourennane, Marie Breil, 2012, Microelectron. Reliab..

New method for electrothermal simulations: HDTMOS in automotive applications

X. Chauffleur, P. Tounsi, J.M. Dorkel, 2004, Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545).

3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs

Philippe Dupuy, Patrick Tounsi, Jean-Marie Dorkel, 2011, Microelectron. Reliab..

VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies

Patrick Tounsi, Marie Breil, Jean-Marie Dorkel, 2014 .

Temperature Sensing for Power MOSFETs in Short-Duration Avalanche Mode

Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, 2014, IEEE Transactions on Device and Materials Reliability.