Zhihao Yu

发表

Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

Zhihao Yu, Z. Ong, Yiming Pan, 2015, Advanced materials.

Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

P. Zhou, Y. Chai, Zhihao Yu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019 .

High‐Performance Monolayer WS2 Field‐Effect Transistors on High‐κ Dielectrics

Zhihao Yu, Z. Ong, Yiming Pan, 2015, Advanced materials.

A MoS2/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

David-Wei Zhang, P. Zhou, Shuiyuan Wang, 2018, Advanced materials.

Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors

Zhihao Yu, Z. Ong, Yong-Wei Zhang, 2017, 1701.02079.

Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS2

Zhihao Yu, Xinran Wang, Xiaoxu Wei, 2014 .

Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016)

Zhihao Yu, Z. Ong, Yiming Pan, 2016, Advanced materials.

Characteristics of nanoporous InGaN/GaN multiple quantum wells

Zhihao Yu, P. Chen, R. Zhang, 2014 .

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Jinlan Wang, Zhihao Yu, Xinran Wang, 2022, Nature.

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

Y. Chai, Zhihao Yu, Xinran Wang, 2020, Advanced Functional Materials.

Low-defect-density WS2 by hydroxide vapor phase deposition

Zhihao Yu, Xinran Wang, Lain‐Jong Li, 2022, Nature Communications.

Temperature dependent growth of InGaN/GaN single quantum well

P. Han, Zhihao Yu, P. Chen, 2012 .

Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Jinlan Wang, Zhihao Yu, Z. Ong, 2014, Nature Communications.

Sub-thermionic, ultra-high-gain organic transistors and circuits

Ming Liu, Zhihao Yu, Yi Shi, 2020, Nature Communications.

MoS2/WSe2 vdW Heterostructures Decorated with PbS Quantum Dots for the Development of High-Performance Photovoltaic and Broadband Photodiodes.

Zhihao Yu, Zhenhua Ni, D. Huo, 2022, ACS nano.

Approaching the quantum limit in two-dimensional semiconductor contacts

E. Pop, Jinlan Wang, Zhihao Yu, 2023, Nature.

High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

S. Lau, Y. Chai, Zhihao Yu, 2017, Advanced materials.

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Rong Zhang, Youdou Zheng, Zhihao Yu, 2021, Nature Nanotechnology.

Revealing the key role of molecular packing on interface spin polarization at two-dimensional limit in spintronic devices

Zhihao Yu, Huijuan Zhao, Daowei He, 2023, Science advances.

Probing Gate Dielectrics for Two-Dimensional Electronics at Atomistic Scale Using Transmission Electron Microscope

Xing Wu, Zhihao Yu, Xinran Wang, 2023, IEEE Transactions on Electron Devices.

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Jinlan Wang, Zhihao Yu, Yi Shi, 2021, Nature Nanotechnology.

Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior

T. Liu, N. Xu, Y. Hao, 2019, IEEE Electron Device Letters.

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019, Nature Electronics.

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019, 1909.09753.

Reducing the power consumption of two-dimensional logic transistors

Zhihao Yu, Xinran Wang, Weisheng Li, 2019, Journal of Semiconductors.

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Huaqiang Wu, Zhihao Yu, Xinran Wang, 2023, Nature Nanotechnology.

Molecular layer modulation of two-dimensional organic ferroelectric transistors

Zhihao Yu, Qiang Zhao, Yong Xu, 2023, Nanotechnology.

Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance

Y. Chai, Zhihao Yu, Xinran Wang, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Y. Chai, Zhihao Yu, Yi Shi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Unique Current-Direction-Dependent ON–OFF Switching in BiSbTeSe2 Topological Insulator-Based Spin Valve Transistors

Rong Zhang, Zhihao Yu, Xinran Wang, 2016, IEEE Electron Device Letters.

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

Xu Zhou, P. Han, Youdou Zheng, 2012 .

From lab to fab: path forward for 2D material electronics

Zhihao Yu, Xinran Wang, Taotao Li, 2023, Science China Information Sciences.

Thickness‐Dependent Asymmetric Potential Landscape and Polarization Relaxation in Ferroelectric HfxZr1−xO2 Thin Films through Interfacial Bound Charges

Zhihao Yu, Xinran Wang, Peng Wang, 2019, Advanced Electronic Materials.

Electrical contacts to two-dimensional transition-metal dichalcogenides

Zhihao Yu, Xinran Wang, Shuxian Wang, 2018, Journal of Semiconductors.

Electron transport and device physics in monolayer transition-metal dichalcogenides

Jinlan Wang, Zhihao Yu, Z. Ong, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

High performance ultraviolet photodiode based on thin DPPT-TT donor–acceptor organic polymer

Zhihao Yu, C. Tan, R. Zakaria, 2022, Applied Physics Letters.

Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets

P. Han, Zhihao Yu, P. Chen, 2012 .

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

P. Han, Youdou Zheng, Zhihao Yu, 2013 .

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Zhihao Yu, Xinran Wang, Weisheng Li, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

S. Lau, Y. Chai, Zhihao Yu, 2017, Advanced materials.

Transition-metal dichalcogenides: Group-10 expands the spectrum

Zhihao Yu, Xinran Wang, 2016, Science China Physics, Mechanics & Astronomy.