Weisheng Li

发表

Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free

P. Zhou, Y. Chai, Zhihao Yu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019 .

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Jinlan Wang, Zhihao Yu, Xinran Wang, 2022, Nature.

Sub-thermionic, ultra-high-gain organic transistors and circuits

Ming Liu, Zhihao Yu, Yi Shi, 2020, Nature Communications.

Boosting the Sensitivity of WSe2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers.

Weisheng Li, Jing Zhou, Lin Wang, 2022, ACS nano.

Approaching the quantum limit in two-dimensional semiconductor contacts

E. Pop, Jinlan Wang, Zhihao Yu, 2023, Nature.

Ultralow contact resistance in organic transistors via orbital hybridization

Xinran Wang, Weisheng Li, Daowei He, 2023, Nature Communications.

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix

Rong Zhang, Youdou Zheng, Zhihao Yu, 2021, Nature Nanotechnology.

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Jinlan Wang, Zhihao Yu, Yi Shi, 2021, Nature Nanotechnology.

Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019, Nature Electronics.

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

X. Duan, Zhihao Yu, Yun Wu, 2019, 1909.09753.

Reducing the power consumption of two-dimensional logic transistors

Zhihao Yu, Xinran Wang, Weisheng Li, 2019, Journal of Semiconductors.

Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets

Xinran Wang, Weisheng Li, Fengqiu Wang, 2019, Advanced Functional Materials.

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Huaqiang Wu, Zhihao Yu, Xinran Wang, 2023, Nature Nanotechnology.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Y. Chai, Zhihao Yu, Yi Shi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps

Yi Shi, Weisheng Li, Xinran Wang, 2021, Science China Information Sciences.

Thickness modulation of incline-grown Bi2O2Se for the construction of high-performance phototransistors

Weisheng Li, R. Cao, Sidi Fan, 2023, Applied Physics Letters.

Bi2O2Se/Au-Based Schottky Phototransistor With Fast Response and Ultrahigh Responsivity

Rong Zhang, Weisheng Li, Fengqiu Wang, 2020, IEEE Electron Device Letters.

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Zhihao Yu, Xinran Wang, Weisheng Li, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Two-dimensional semiconductor integrated circuits operating at gigahertz frequencies

Weisheng Li, Hao Qiu, X. Tu, 2023, Nature Electronics.

Two-dimensional materials for future information technology: status and prospects

Chunsen Liu, Weisheng Li, Zhenhua Ni, 2024, Sci. China Inf. Sci..

Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study.

Weisheng Li, Zhenhua Wu, Hengze Qu, 2024, Science bulletin.