Seungho Kim

发表

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Seungho Kim, Gyuho Myeong, Wongil Shin, 2020, Nature Nanotechnology.

Steep-slope Schottky diode with cold metal source

Fei Liu, Seungho Kim, Gyuho Myeong, 2022, Applied Physics Letters.

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature.

Seungho Kim, Gyuho Myeong, Wongil Shin, 2020, ACS nano.

Magnetostatic Coupling Between two Nanowires of Different Width

Seungho Kim, K. Yoo, Junyong Lee, 2009 .

Variation of the Switching Field of Composite Nanowires with Different Widths

Seungho Kim, Seunghyun Lee, Junyong Lee, 2008 .

NiO Thickness Dependences of Perpendicular Magnetic Anisotropy in the [CoFe/Pt] Multilayers

Seungho Kim, D. Hwang, E. Hahn, 2004 .

Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Seungho Kim, Gyuho Myeong, Wongil Shin, 2020, Nature Nanotechnology.

Electrical Control of the Rashba-Edelstein Effect in a Graphene/2H-TaS2 Van der Waals Heterostructure at Room Temperature

Seungho Kim, Gyuho Myeong, Wongil Shin, 2019, 1906.10702.

Dirac-source diode with sub-unity ideality factor

M. Fuhrer, Seungho Kim, Gyuho Myeong, 2021, Nature Communications.

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors.

Seungho Kim, Gyuho Myeong, Kenji Watanabe, 2020, Nano letters.