Vvedensky

发表

Stochastic equations of motion for epitaxial growth.

D. Vvedensky, Vvedensky, Zangwill, 1993, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy: A computational modeling approach.

Clarke, D. Vvedensky, Vvedensky, 1987, Physical review letters.

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001).

Zhang, Joyce, Vvedensky, 1992, Physical review. B, Condensed matter.

Saturation and scaling of epitaxial island densities.

C. Ratsch, D. Vvedensky, Vvedensky, 1994, Physical review letters.

Coarsening and slope evolution during unstable spitaxial growth.

Smilauer, Vvedensky, Šmilauer, 1995, Physical review. B, Condensed matter.

Nonlinear model for temporal evolution of stepped surfaces during molecular-beam epitaxy.

Vvedensky, Myers-Beaghton, 1990, Physical review. B, Condensed matter.

Misorientation dependence of epitaxial growth on vicinal GaAs(001).

Zhang, Joyce, Vvedensky, 1992, Physical review. B, Condensed matter.

Reentrant layer-by-layer growth: A numerical study.

Smilauer, D. Vvedensky, Vvedensky, 1993, Physical review. B, Condensed matter.

Layer Korringa-Kohn-Rostoker theory for close-spaced planes of atoms.

MacLaren, Vvedensky, Crampin, 1989, Physical review. B, Condensed matter.

Localized grain-boundary electronic states and intergranular fracture.

Eberhart, Vvedensky, 1987, Physical review letters.

Step-edge barriers on GaAs(001).

Vvedensky, Šmilauer, 1993, Physical review. B, Condensed matter.

Simulation of recovery kinetics in Si(001) molecular-beam epitaxy.

Kawamura, Clarke, Vvedensky, 1989, Physical review. B, Condensed matter.

Growth mechanism for molecular-beam epitaxy of group-IV semiconductors.

Clarke, Vvedensky, 1988, Physical review. B, Condensed matter.

Influence of surface step density on reflection high-energy-electron diffraction specular intensity during epitaxial growth.

Clarke, Vvedensky, 1987, Physical review. B, Condensed matter.

Comment on "Experimental study of multiple scattering in x-ray absorption near-edge structure"

Pendry, Vvedensky, 1985, Physical review letters.

Layer Korringa-Kohn-Rostoker technique for surface and interface electronic properties.

MacLaren, J. Pendry, Pendry, 1989, Physical review. B, Condensed matter.

Symmetry-induced local magnetic moments in icosahedral Al-Mn alloys.

Eberhart, Vvedensky, Mchenry, 1988, Physical review. B, Condensed matter.

Statistical treatment of dynamical electron diffraction from growing surfaces.

Whelan, Vvedensky, Dudarev, 1994, Physical review. B, Condensed matter.

Nonlinear equation for diffusion and adatom interactions during epitaxial growth on vicinal surfaces.

Vvedensky, Myers-Beaghton, 1990, Physical review. B, Condensed matter.

Quantitative multiple-scattering analysis of near-edge x-ray-absorption fine structure: c(22)O on Cu(100).

Pendry, Vvedensky, Döbler, 1987, Physical review. B, Condensed matter.

Generalized Burton-Cabrera-Frank theory for growth and equilibration on stepped surfaces.

Vvedensky, Myers-Beaghton, 1991, Physical review. A, Atomic, molecular, and optical physics.

Step stability, domain coverage, and nonequilibrium kinetics in Si(001) molecular-beam epitaxy.

Kawamura, Miki, Clarke, 1990, Physical review. B, Condensed matter.

Electronic structure near (210) tilt boundaries in nickel.

Eberhart, MacLaren, Vvedensky, 1989, Physical review. B, Condensed matter.

L and M edges of copper: Theory and experiment.

Vvedensky, Aebi, Kostorz, 1990, Physical review. B, Condensed matter.

Mechanical stability and charge densities near stacking faults.

Eberhart, MacLaren, Vvedensky, 1989, Physical Review Letters.

Erratum: Scaling in a solid-on-solid model of epitaxial growth

Vvedensky, Zangwill, Wilby, 1993, Physical review. B, Condensed matter.

Scaling in a solid-on-solid model of epitaxial growth.

Vvedensky, Zangwill, Wilby, 1992, Physical review. B, Condensed matter.