Jing Wang

RF characterization and parameter extraction for CMOS device models

Basanth Jagannathan, Jing Wang, L. Wagner, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

R. Lindsay, D. Ahlgren, E. Zhao, 2008, IEEE Transactions on Device and Materials Reliability.

Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices

B. Jagannathan, S. Sweeney, U. Gogineni, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

Quantitative Analysis of Errors in On-Wafer S-Parameter De-embedding Techniques for High Frequency Device Modeling

Jing Wang, L. Wagner, R. Groves, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

R. Lindsay, D. Ahlgren, E. Zhao, 2007, 2007 IEEE International Integrated Reliability Workshop Final Report.

Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices

Jing Wang, Basanth Jagannathan, Hongmei Li, 2009, IEEE Journal of Solid-State Circuits.

Effect of substrate contact shape and placement on RF characteristics of 45 nm low power CMOS devices

B. Jagannathan, S. Sweeney, U. Gogineni, 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

RF Modeling of 45nm Low-Power CMOS Technology

R. Wachnik, B. Jagannathan, R. Groves, 2009 .

Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

B. Jagannathan, Jing Wang, Yun Shi, 2007, 2007 IEEE Symposium on VLSI Technology.