C. Viswanathan

发表

A numerical simulation of the transient drain current in a MOST at cryogenic temperatures

M. Grupen, C. Viswanathan, 1989, Proceedings of the Workshop on Low Temperature Semiconductor Electronics,.

Model for Thickness Dependence of Radiation Charging in MOS Structures

C. R. Viswanathan, J. Maserjian, C. Viswanathan, 1976, IEEE Transactions on Nuclear Science.

Silicon-oxide interface studies by a photoelectric technique

S. Ogura, C. Viswanathan, 1969 .

Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

V. Rao, C. Viswanathan, S. Mahapatra, 2000 .

Mobility-field behavior of fully depleted SOI MOSFET's

J. Woo, C. Viswanathan, J. Wang, 1994, IEEE Electron Device Letters.

Low-temperature mobility measurements on CMOS devices

C. Viswanathan, A. Hairapetian, D. Gitlin, 1989 .

Generation of hole traps in thin silicon oxide layers under high‐field electron injection

C. Viswanathan, T. Brożek, Chand R. Viswanathan, 1996 .

Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures

A. Abidi, C. Viswanathan, Jimmin Chang, 1994 .

Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

C. Viswanathan, V. Ramgopal Rao, T. Brożek, 1998, 1998 3rd International Symposium on Plasma Process-Induced Damage (Cat. No.98EX100).

Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors

V. Rao, C. Viswanathan, A. Balandin, 1998, IEEE Electron Device Letters.

Flicker noise in thin film fully depleted SOI MOSFETs

C. Viswanathan, J. Wang, Jen-tai Hsu, 1991, 1991 IEEE International SOI Conference Proceedings.

Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics

J. Werking, C. Viswanathan, T. Brożek, 1996, International Electron Devices Meeting. Technical Digest.

A direct depletion capacitance measurement technique to determine the doping profile under the gate of a MOSFET

J. A. Wikstrom, C. Viswanathan, 1987, IEEE Transactions on Electron Devices.

Degraded CMOS hot carrier life time-role of plasma etching induced charging damage and edge damage

T. Brozek, C. Viswanathan, T. Brożek, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

GIDL-induced charge injection for characterization of plasma edge damage in CMOS devices

J. Werking, C. Viswanathan, S. Anderson, 1997, 1997 IEEE International Conference on Microelectronic Test Structures Proceedings.

Effect of plasma poly etch on effective channel length and hot carrier reliability in submicron transistors

C. Viswanathan, R. Divakaruni, V. Prabhakar, 1994, IEEE Electron Device Letters.

Reappearance of plasma induced oxide charge under Fowler-Nordheim stress

C. Viswanathan, P. Aum, Jen-tai Hsu, 1994 .

DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures

C. Viswanathan, M. E. Kim, V. Raman, 1991 .

Minority carrier generation time and surface generation velocity determination from Q-t measurements

C. Viswanathan, T. Takino, 1978, IEEE Transactions on Electron Devices.

PHOTO-INJECTION STUDIES OF TRAPS IN Hcℓ/H2O OXIDES

C. Viswanathan, J. Dorosti, 1978 .

Direct Measurement of Built‐in Voltage in MOS Structures

S. Ogura, C. Viswanathan, 1971 .

Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

C. Viswanathan, T. Brożek, Y. Chan, 1996 .

CALCULATION OF THE PHOTOELECTRIC EMISSION FROM TUNGSTEN, TANTALUM, AND MOLYBDENUM.

C. Viswanathan, I. Petroff, 1971 .

The effect of arsenic in improving lifetime in silicon‐on‐sapphire films

C. Viswanathan, D. McGreivy, 1974 .

Quasi-static behavior of MOS devices in the freeze-out regime

C. Viswanathan, R. Divakaruni, 1995 .

Activation energy determination from low-temperature CV dispersion [semiconductor devices]

C. Viswanathan, R. Divakaruni, V. Prabhakar, 1994 .

Characterization of improved InSb interfaces

C. Viswanathan, C.R. Viswanathan, J.D. Langan, 1979, 1978 International Electron Devices Meeting.

Application of charge pumping technique for sub-micron MOSFET characterization

V. Ramgopal Rao, C. R. Viswanathan, V. Rao, 1998 .

Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Alexander A. Balandin, Kang L. Wang, Sergey Morozov, 1999 .

Dynamics of arsenic diffusion in metalorganic chemical deposited HgCdTe on GaAs/Si substrates

C. Viswanathan, D. Edwall, L. Bubulac, 1991 .

Electrical properties of GaAS/InGaAs high electron mobility transistors

Jane P. Chang, C. Viswanathan, V. Raman, 1990 .

Low-temperature characterization of buried-channel NMOST

J. Chang, C. Viswanathan, Chand R. Viswanathan, 1989 .

Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown

C. Viswanathan, P. Aum, Jen-tai Hsu, 1993, IEEE Electron Device Letters.

Reliability Study of Plasma Etching Damage in ULSI Process

C. Viswanathan, P. Aum, Jen-tai Hsu, 1994 .

Threshold voltage degradation in plasma damaged cmos transistors - role of electron and hole traps related to charging damage

C. Viswanathan, T. Brożek, Y. Chan, 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

Role of Test Stress Levels in Detection of Process-Induced Latent Charging Damage in MOS Transistors

C. R. Viswanathan, Lihua Peng, C. Viswanathan, 1996, Proceedings of 1st International Symposium on Plasma Process-Induced Damage.

Compositional analysis of HgCdTe epitaxial layers using secondary ion mass spectrometry

C. Viswanathan, J. Cheung, D. Edwall, 1992 .

Novel very sensitive analytical technique for compositional analysis of Hg1−xCdxTe epilayers

C. Viswanathan, L. Bubulac, 1992 .

Plasma-induced damage

C. Viswanathan, 1999 .

Space‐Charge‐Limited Current of Holes in Silicon and Techniques for Distinguishing Double and Single Injection

C. Viswanathan, O. Marsh, 1967 .

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Alexander A. Balandin, Kang L. Wang, M. Wojtowicz, 2000 .

Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field Effect Transistors

Alexander A. Balandin, V. Ramgopal Rao, Kang L. Wang, 1998 .

Flicker noise in GaN/Al0.15Ga0.85N doped channel heterostructure field effect transistors

Kang L. Wang, Shengqiang Cai, C. R. Viswanathan, 1998 .

Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection

E. Lum, C. Viswanathan, T. Brożek, 1997 .

Low-temperature characterization of CMOS devices

C. R. Viswanathan, C. Viswanathan, 1989, International Symposium on VLSI Technology, Systems and Applications,.

Diffusion of As and Sb in HgCdTe

C. Viswanathan, L. Bubulac, 1992 .

Depletion region formation at low temperatures

C. Viswanathan, R. Divakaruni, V. Prabhakar, 1991, 1991 International Symposium on VLSI Technology, Systems, and Applications - Proceedings of Technical Papers.

The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements

H. Fetterman, C. Viswanathan, Chian-Sern Chang, 1989 .

Flicker noise measurements in enhancement mode and depletion mode n-MOS transistors

C. R. Viswanathan, C. Viswanathan, C. Anagnostopoulos, 1989, International Symposium on VLSI Technology, Systems and Applications,.

Threshold voltage in short-channel MOS devices

G. Lubberts, T. Tredwell, C. Viswanathan, 1985, IEEE Transactions on Electron Devices.

Lateral nonuniformities and the MOSFET mobility step near threshold

J. A. Wikstrom, C. Viswanathan, 1988 .

A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

V. Rao, C. Viswanathan, S. Mahapatra, 1999 .

A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique

Souvik Mahapatra, Juzer Vasi, V. Ramgopal Rao, 2000 .

Substrate current measurements in thin SOI MOSFET's at 300 and 77 K

J. Woo, C. Viswanathan, P. Vasudev, 1991 .

Oxide modification near gate edges due to plasma etching of poly-Si gate in submicron MOSFET

J. Werking, C. Viswanathan, V. Prabhakar, 1996, Proceedings of 1st International Symposium on Plasma Process-Induced Damage.

Investigation Of Edge Damage Using Localized Charge Injection

J. Werking, C. Viswanathan, T. Brożek, 1997, 2nd International Symposium on Plasma Process-Induced Damage.