C. Claeys

发表

Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor

B. Dierickx, E. Simoen, C. Claeys, 1991 .

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

A. Mercha, E. Simoen, C. Claeys, 2003 .

Low-frequency noise behavior of Si NMOSTs stressed at 4.2 K

B. Dierickx, E. Simoen, C. Claeys, 1993 .

A Two-Dimensional Model for Interface Coupling in Triple-Gate Transistors

A. Mercha, K. Akarvardar, E. Simoen, 2007, IEEE Transactions on Electron Devices.

Random Telegraph Signal: a local probe for single point defect studies in solid-state devices

E. Simoen, C. Claeys, 2002 .

Ge content dependence of radiation damage in Si1‐xGex source/drain p‐type metal oxide semiconductor field effect transistors

E. Simoen, C. Claeys, M. B. González, 2013 .

Silicon-on-insulator 'gate-all-around device'

J. Colinge, H. Maes, C. Claeys, 1990, International Technical Digest on Electron Devices.

Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs

D. Misra, E. Simoen, C. Claeys, 2005 .

Charge based compact model for bulk FinFETs

R. Ritzenthaler, M. Togo, C. Claeys, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Ground Plane Impact on Performance of Relaxed Ge FinFETs

N. Collaert, J. Mitard, L. Witters, 2019, Journal of Integrated Circuits and Systems.

Explaining the parameters of the electron valence-band tunneling related Lorentzian noise in fully depleted SOI MOSFETs

A. Mercha, E. Simoen, C. Claeys, 2003, IEEE Electron Device Letters.

Chapter 4 – Radiation Effects and Low-Frequency Noise in Silicon Technologies

E. Simoen, C. Claeys, 2001 .

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

D. R. Ball, B. L. Bhuva, N. N. Mahatme, 2014, IEEE Transactions on Nuclear Science.

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

M. L. Alles, E. Simoen, C. Claeys, 2013, IEEE Transactions on Nuclear Science.

Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

A. Mercha, E. Simoen, C. Claeys, 2004 .

Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors

E. Simoen, C. Claeys, J. Martino, 2006 .

Estimating Temperature Dependence of Generation Lifetime Extracted from Drain Current Transients Model

A. Mercha, E. Simoen, C. Claeys, 2006 .

Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

E. Simoen, C. Claeys, J. Martino, 2007 .

Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

E. Simoen, C. Claeys, J. Martino, 2007 .

Short-channel radiation effect in 60 MeV proton irradiated 0.13 /spl mu/m CMOS transistors

Emmanuel Augendre, Eddy Simoen, C. Claeys, 2003 .

Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation

M. Aoulaiche, E. Simoen, C. Claeys, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

$1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks

V. Rao, E. Simoen, C. Claeys, 2009 .

Influence of the pre-treatment anneal on Co-germanide Schottky contacts

E. Simoen, C. Claeys, J. Barbot, 2008 .

Co-Germanide Schottky Contacts on Ge

K. Opsomer, E. Simoen, C. Claeys, 2007 .

Threshold voltage extraction in Tunnel FETs

P. Agopian, C. Claeys, A. Ortiz-Conde, 2014 .

Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

R. Rooyackers, P. Agopian, E. Simoen, 2016, IEEE Transactions on Electron Devices.

Radiation Effects in Advanced Semiconductor Materials and Devices

E. Simoen, C. Claeys, 2002 .

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

G. Eneman, E. Simoen, C. Claeys, 2011 .

Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Midorikawa, E. Simoen, C. Claeys, 2010 .

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

A. Mercha, B. Kaczer, E. Simoen, 2007, IEEE Electron Device Letters.

A 1006 element hybrid silicon pixel detector with strobed binary output

G. Stefanini, P. Aspell, E. Focardi, 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

Explaining the amplitude of RTS noise in submicrometer MOSFETs

Eddy Simoen, B. Dierickx, C. Claeys, 1992 .

Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs

En Xia Zhang, R D Schrimpf, peixiong zhao, 2011, IEEE Transactions on Nuclear Science.

Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

Cor Claeys, Rita Rooyackers, Eddy Simoen, 2013, IEEE Transactions on Electron Devices.

Unity gain frequency on FinFET and TFET devices

A. Thean, R. Rooyackers, P. Agopian, 2014, International Caribbean Conference on Devices, Circuits and Systems.

Opposite trends between digital and analog performance for different TFET technologies

N. Collaert, R. Rooyackers, P. Agopian, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes

Rita Rooyackers, Eddy Simoen, Amporn Poyai, 2004 .

Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers

H. Bender, N. Collaert, C. Merckling, 2020, ECS Journal of Solid State Science and Technology.

Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs

H. Mertens, R. Ritzenthaler, N. Horiguchi, 2021 .

Horizontal, Stacked or Vertical Silicon Nanowires: Does it Matter from a Low-Frequency Noise Perspective?

H. Mertens, R. Ritzenthaler, N. Horiguchi, 2020, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Junctionless Versus Inversion-Mode Gate-All-Around Nanowire Transistors From a Low-Frequency Noise Perspective

N. Collaert, A. Veloso, P. Matagne, 2018, IEEE Transactions on Electron Devices.

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

Denis Flandre, Cor Claeys, Eddy Simoen, 2012, Microelectron. Reliab..

Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices

N. Collaert, E. Simoen, C. Claeys, 2007, IEEE Transactions on Nuclear Science.

Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

E. Simoen, C. Claeys, Abdelkarim Mercha, 2007 .

Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

A. Paccagnella, E. Simoen, C. Claeys, 2008, IEEE Transactions on Nuclear Science.

Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

Cor Claeys, Eddy Simoen, Mireia Bargallo Gonzalez, 2010 .

Study of Neutron Irradiation Effects on SOI and Strained SOI MuGFETs Assessed by Low-Frequency Noise

D. Flandre, N. Collaert, E. Simoen, 2010 .

Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Denis Flandre, Cor Claeys, Rita Rooyackers, 2011 .

Effects of Heavy-Ion Strikes on Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques

E. Simoen, C. Claeys, S. Gerardin, 2007, IEEE Transactions on Nuclear Science.

Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs

A. Mercha, E. Simoen, C. Claeys, 2004, IEEE Transactions on Nuclear Science.

Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

P. Agopian, E. Simoen, C. Claeys, 2018 .

Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation

P. Agopian, E. Simoen, C. Claeys, 2014 .

Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs

P. Agopian, E. Simoen, C. Claeys, 2012, IEEE Transactions on Nuclear Science.

Radiation hardness aspects of advanced FinFET and UTBOX devices

peixiong zhao, R. Reed, M. Aoulaiche, 2012, 2012 IEEE International SOI Conference (SOI).

Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs

P. Leroux, E. Simoen, C. Claeys, 2010, IEEE Electron Device Letters.

Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs

Alessandro Paccagnella, Cor Claeys, Eddy Simoen, 2009, IEEE Transactions on Nuclear Science.

DIBL performance of 60 MeV proton-irradiated SOI MuGFETs

P. Agopian, E. Simoen, C. Claeys, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

A Statistical Approach to Microdose Induced Degradation in FinFET Devices

R. Degraeve, A. Paccagnella, E. Simoen, 2009, IEEE Transactions on Nuclear Science.

Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs

A. Paccagnella, E. Simoen, C. Claeys, 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.

Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2004 .

Comparison of the radiation behavior of 65 nm fully depleted Silicon-on-Insulator MOSFETs employing different tensile-strain-inducing techniques

Paul Leroux, Emmanuel Augendre, Eddy Simoen, 2006 .

Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates

M Poizat, A Griffoni, K. Hirose, 2011, IEEE Transactions on Nuclear Science.

Low temperature performance of proton irradiated strained SOI FinFET

P. Agopian, E. Simoen, C. Claeys, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Enhanced model for ZTC in irradiated and strained pFinFET

P. Agopian, E. Simoen, C. Claeys, 2017, 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).

Influence of proton radiation and strain on nFinFET zero temperature coefficient

Cor Claeys, Eddy Simoen, Joao A. Martino, 2016, 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).

Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

P. Agopian, E. Simoen, C. Claeys, 2016, 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).

Zero Temperature Coefficient behavior for advanced MOSFETs

P. Agopian, E. Simoen, C. Claeys, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Reliability performance characterization of SOI FinFETs

E. Simoen, C. Claeys, J. M. Rafí, 2009, 2009 2nd International Workshop on Electron Devices and Semiconductor Technology.

Low-Frequency Noise Characterization of Germanium n-Channel FinFETs

N. Horiguchi, N. Collaert, H. Arimura, 2020, IEEE Transactions on Electron Devices.

Low-frequency noise study of Ge p-MOSFETs with HfO2/Al2O3/GeOx gate stack

A. Thean, J. Mitard, H. Arimura, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs

H. Mertens, N. Collaert, J. Mitard, 2015, IEEE Transactions on Electron Devices.

The impact of the temperature on In0.53Ga0.47As nTFETs

D. Mocuta, N. Collaert, R. Rooyackers, 2018 .

The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs

N. Collaert, R. Rooyackers, P. Agopian, 2017, IEEE Transactions on Electron Devices.

Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

N. Collaert, R. Rooyackers, P. Agopian, 2021 .

Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

N. Collaert, R. Rooyackers, P. Agopian, 2018, Semiconductor Science and Technology.

Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

M. D. V. Martino, R. Rooyackers, P. Agopian, 2017 .

Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs

Cor Claeys, Rita Rooyackers, Eddy Simoen, 2015, IEEE Transactions on Electron Devices.

Analog performance of vertical nanowire TFETs as a function of temperature and transport mechanism

Cor Claeys, Rita Rooyackers, Eddy Simoen, 2015 .

Comparison between vertical silicon NW-TFET and NW-MOSFETfrom analog point of view

A. Vandooren, R. Rooyackers, E. Simoen, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

NW-TFET analog performance for different Ge source compositions

A. Vandooren, R. Rooyackers, E. Simoen, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Impact of Donor Concentration, Electric Field, and Temperature Effects on the Leakage Current in Germanium p $+/$n Junctions

E. Simoen, C. Claeys, G. Hellings, 2008, IEEE Transactions on Electron Devices.

Challenges and opportunities in advanced Ge pMOSFETs

Geert Hellings, Jerome Mitard, Eddy Simoen, 2012 .

Trends and Outlook

E. Simoen, C. Claeys, 2007 .

Are Extended Defects a Show Stopper for Future III-V CMOS Technologies

N. Collaert, N. Waldron, M. Heyns, 2019, Journal of Physics: Conference Series.

On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge $\hbox{p}^{+}\hbox{n}$ Junctions

E. Simoen, C. Claeys, G. Eneman, 2009, IEEE Electron Device Letters.

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

A. Hikavyy, C. Merckling, R. Loo, 2016 .

Analysis of border traps in high-к gate dielectrics on high-mobility channels

C. Merckling, J. Mitard, E. Simoen, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures

A. Thean, N. Collaert, P. Agopian, 2016 .

Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs

G. Meneghesso, E. Simoen, C. Claeys, 2010, IEEE Transactions on Device and Materials Reliability.

Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques

E. Simoen, C. Claeys, G. Meneghesso, 2008, EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium.

Impact of halo implantation on 0.13 μm floating body partially depleted SOI n-MOSFETs in low temperature operation

Marcelo Antonio Pavanello, Cor Claeys, Eddy Simoen, 2005 .

The low-frequency noise behaviour of silicon-on-insulator technologies

Cor Claeys, Eddy Simoen, E. Simoen, 1996 .

Analysis of temperature variation influence on the analog performance of 45° rotated triple-gate nMuGFETs

E. Simoen, C. Claeys, J. Martino, 2012 .

Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs

Marcelo Antonio Pavanello, Cor Claeys, Rita Rooyackers, 2008 .

Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation

Marcelo Antonio Pavanello, Rita Rooyackers, Eddy Simoen, 2007 .

Chapter 2 – Silicon Devices and Circuits

E. Simoen, C. Claeys, E. Gutiérrez-D., 2001 .

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2004 .

Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks

E. Simoen, C. Claeys, F. Crupi, 2006, IEEE Electron Device Letters.

Reliability Aspects of Cryogenic Silicon Technologies

E. Simoen, C. Claeys, 2001 .

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFETs

E. Simoen, C. Claeys, J. Sikula, 1997, IEEE Electron Device Letters.

Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates

E. Simoen, C. Claeys, R. Doria, 2013 .

Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

Cor Claeys, Eddy Simoen, M. Petrichuk, 1999 .

LOW-FREQUENCY NOISE CHARACTERISATION OF SILICON-ON INSULATOR DEPLETION-MODE p-MOSFETS

E. Simoen, C. Claeys, N. Lukyanchikova, 1995 .

Low-frequency noise behavior of γ-irradiated partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor transistors

E. Simoen, C. Claeys, 1993 .

A study of the kink‐related excess low‐frequency noise in silicon‐ on‐insulator n‐metal‐oxide‐semiconductor transistors operated at liquid helium temperatures

B. Dierickx, E. Simoen, C. Claeys, 1992 .

Correlation between the low-frequency noise spectral density and the static device parameters of silicon-on-insulator MOSFETs

E. Simoen, C. Claeys, 1995 .

Low-frequency noise and DC characterization of ionization damage in a 1-/spl mu/m SOI CMOS technology adapted for space applications

J. Colinge, E. Simoen, C. Claeys, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

Empirical relationship between the low‐frequency noise spectral density and the transconductance of silicon‐on‐insulator n‐channel metal‐oxide‐semiconductor transistors

Cor Claeys, Eddy Simoen, E. Simoen, 1994 .

D.c. and low frequency noise characteristics of γ-irradiated gate-all-around silicon-on-insulator MOS transistors

Cor Claeys, Eddy Simoen, M Decreton, 1995 .

Low-frequency noise characterisation of γ-irradiated silicon-on-insulator MOSFETs

E. Simoen, C. Claeys, 1995 .

Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

E. Simoen, Abdelkarim Mercha, R. Carin, 2007 .

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

N. Collaert, E. Simoen, C. Claeys, 2012 .

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

N. Collaert, E. Simoen, C. Claeys, 2011 .

Processing and Defect Control in Advanced Ge Technologies

K. Opsomer, A. Satta, E. Simoen, 2007, 2007 International Workshop on Electron Devices and Semiconductor Technology (EDST).

Gate electrode effects on low-frequency (1/ f) noise in p-MOSFETs with high-? dielectrics

Eddy Simoen, Purushothaman Srinivasan, Durgamadhab Misra, 2006 .

Gate Metal and Cap Layer Effects on Ge nMOSFETs Low-Frequency Noise Behavior

N. Horiguchi, N. Collaert, J. Mitard, 2019, IEEE Transactions on Electron Devices.

Low Frequency Noise Analysis of Impact of Metal Gate Processing on the Gate Oxide Stack Quality

N. Horiguchi, N. Collaert, A. Veloso, 2018 .

TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective

R. Ritzenthaler, T. Schram, N. Horiguchi, 2018, IEEE Transactions on Electron Devices.

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

N. Horiguchi, A. Veloso, E. Simoen, 2013, IEEE Transactions on Electron Devices.

1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack

A. O'Neill, E. Simoen, C. Claeys, 2009 .

Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

D. Misra, E. Simoen, C. Claeys, 2007 .

Trends and challenges in More Moore and More than Moore research

Cor Claeys, C. Claeys, 2009 .

Opto-Electronic Components for Space

E. Simoen, C. Claeys, 2002 .

Stress Analysis and Junction Leakage of Sub-Melt Laser Annealed SiGe Epitaxial Layers

A. Hikavyy, E. Rosseel, R. Loo, 2010, IEEE Transactions on Semiconductor Manufacturing.

Enhanced dynamic threshold UTBB SOI at high temperature

E. Simoen, C. Claeys, J. A. Martino, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

E. Simoen, C. Claeys, J. Martino, 2016, 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).

Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

M. Aoulaiche, L. Witters, E. Simoen, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substrates

Cor Claeys, Eddy Simoen, Durga Misra, 2006 .

SOI MOSFET Transconductance Behavior from Micro to Nano Era

P. Agopian, E. Simoen, C. Claeys, 2011 .

Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K

E. Simoen, C. Claeys, 1995 .

Electrical Activity of Iron and Copper in Si, SiGe and Ge

E. Simoen, C. Claeys, 2018 .

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact

E. Simoen, C. Claeys, 2018 .

Displacement Damage in Group IV Semiconductor Materials

E. Simoen, C. Claeys, 2002 .

Deep levels in heat-treated and 252Cf-irradiated p-type silicon substrates with different oxygen content

E. Simoen, C. Claeys, J. Vanhellemont, 1994 .

Random telegraph noise: the key to single defect studies in nano-devices

M. Aoulaiche, E. Simoen, C. Claeys, 2016 .

Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions

E. Simoen, C. Claeys, A. Czerwinski, 2003 .

Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes

E. Simoen, C. Claeys, A. Poyai, 2002 .

Lifetime study in advanced isolation techniques

G. Badenes, R. Rooyackers, E. Simoen, 2001 .

Diode Analysis of High-Energy Boron Implantation-Induced P-Well Defects

G. Badenes, R. Rooyackers, E. Simoen, 2001 .

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

R. Loo, G. Eneman, P. Verheyen, 2009 .

In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature

E. Simoen, C. Claeys, A. Benfdila, 2014 .

Hot-carrier degradation of nMOSTs stressed at 4.2 K

E. Simoen, C. Claeys, 1993 .

Radiation Damage in Silicon MOS Devices

E. Simoen, C. Claeys, 2002 .

Gettering and Passivation of Metals in Silicon and Germanium

E. Simoen, C. Claeys, 2018 .

Technology development challenges for advanced group IV semiconductor devices

A. Thean, N. Collaert, A. Veloso, 2016 .

Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics

E. Simoen, C. Claeys, J. M. Rafí, 2009 .

Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon

E. Simoen, C. Claeys, P. Clauws, 2000 .

Generation and annealing behaviour of MeV proton and /sup 252/Cf irradiation induced deep levels in silicon diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1994 .

Substrate and Particle Dependent Deep Level Generation in Silicon by MeV Particle Beams

E. Simoen, C. Claeys, J. Vanhellemont, 1992 .

A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon

C. Claeys, Jan Vanhellemont, C. Claeys, 1987 .

Basic Properties of Transition Metals in Semiconductors

E. Simoen, C. Claeys, 2018 .

Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals

C. Claeys, V. Litovchenko, V. Kladko, 2011 .

Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter

C. Claeys, V. Litovchenko, V. Kladko, 2007 .

Carbon Enhancement of SiO2 Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

C. Claeys, V. Litovchenko, G. Romanova, 2001 .

Process- and irradiation-induced defects in silicon devices

E. Simoen, C. Claeys, J. Vanhellemont, 1996 .

A Quantitative Model for Silicon Yield Stress Calculations at Thin Film Edges

Jan Vanhellemont, C. Claeys, J. Vanhellemont, 1988 .

Defect control in advanced high-mobility substrates

E. Simoen, C. Claeys, 2005 .

Radiation Damage in GaAs

E. Simoen, C. Claeys, 2002 .

Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects

P. K. Basu, G. Eneman, P. Verheyen, 2008 .

Design impact on drain multiplication latch-up triggering

Ludo Deferm, C. Claeys, H. Lebon, 1988 .

Flicker noise in deep submicron nMOS transistors

Eddy Simoen, N. Lukyanchikova, N. P Garbar, 2000 .

Outplating of Metallic Contaminants on Silicon Wafers From Diluted Acid Solutions

M. Heyns, C. Claeys, A. Rotondaro, 1995 .

Sensitive Light Scattering as a Semiquantitative Method for Studying Photoresist Stripping

M. Heyns, C. Claeys, M. Meuris, 1995 .

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

E. Simoen, C. Claeys, J. Martino, 2008 .

Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs

R. Loo, G. Eneman, P. Verheyen, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Diode analysis of advanced processing modules for deep-submicrometer CMOS technology nodes

R. Rooyackers, E. Simoen, C. Claeys, 2003 .

Gate Bias Effect on the 60-MeV Proton Irradiation Response of 65-nm CMOS nMOSFETs

M. Jurczak, E. Simoen, C. Claeys, 2006, IEEE Transactions on Electron Devices.

Low frequency noise spectroscopy in rotated UTBOX nMOSFETs

E. Simoen, C. Claeys, R. Carin, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Can we optimize the gate oxide quality of DRAM input/output pMOSFETs by a post-deposition treatment?

R. Ritzenthaler, T. Schram, N. Horiguchi, 2018, Semiconductor Science and Technology.

Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

E. Simoen, C. Claeys, J. Vanhellemont, 2001 .

Low-Frequency-Noise-Based Oxide Trap Profiling in Replacement High-κ/Metal-Gate pMOSFETs

N. Horiguchi, A. Veloso, V. Paraschiv, 2014 .

Source of Metals in Si and Ge Crystal Growth and Processing

E. Simoen, C. Claeys, 2018 .

Determination of PHEMT's Microwave Noise Parameters Only by Means of the Small-Signal Equivalent Circuit and Experimental Comparisons

C. Claeys, M. D. Murcia, W. Raedt, 1995 .

Modeling of Metal Properties in Si, Si 1− x Ge x and Ge

E. Simoen, C. Claeys, 2018 .

Impact of high energy particle irradiation on the electrical performance of Si1−xGex epitaxial diodes

M. Caymax, E. Simoen, C. Claeys, 1999 .

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

R. Ritzenthaler, T. Schram, N. Horiguchi, 2016 .

Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI

E. Simoen, C. Claeys, W. Fang, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates

N. Horiguchi, A. Veloso, E. Simoen, 2020, IEEE Transactions on Electron Devices.

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

E. Simoen, C. Claeys, M. Beaufort, 2007 .

Low-frequency noise behaviour of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton

M. G. C. de Andrade, N. Collaert, M. Aoulaiche, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Floating body effect on n-channel bulk FinFETs for memory application

M. Aoulaiche, E. Simoen, C. Claeys, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Two-sided read window observed on UTBOX SOI 1T-DRAM

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs

M. Aoulaiche, E. Simoen, C. Claeys, 2012, IEEE Transactions on Electron Devices.

One Transistor Floating Body RAM Performances on UTBOX Devices Using the BJT Effect

M. Aoulaiche, E. Simoen, C. Claeys, 2012 .

Impact of carbon-doping on time dependent dielectric breakdown of SiO2-based films

Cor Claeys, Y Yohan Barbarin, Larry Zhao, 2015 .

Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating

R. Agaiby, R. Loo, A. O'Neill, 2008, IEEE Transactions on Electron Devices.

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

E. Simoen, C. Claeys, J. M. Rafí, 2006 .

Defect assessment and leakage control in Ge junctions

R. Loo, G. Eneman, E. Simoen, 2014 .

On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions

G. Wang, G. Eneman, E. Simoen, 2009 .

Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon

E. Simoen, C. Claeys, G. Tonelli, 2002 .

RD19: status report on 1993 development of hybrid and monolithic silicon micropattern detectors

F. Krummenacher, K. Smith, M. Habrard, 1994 .

New concepts for integrated solid state detector electronics

I. Debusschere, C. Claeys, G. Declerck, 1988 .

Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs

N. Collaert, E. Simoen, C. Claeys, 2010 .

On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

E. Simoen, C. Claeys, N. Lukyanchikova, 2009 .

Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

M. Aoulaiche, E. Simoen, C. Claeys, 2015 .

Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium

J. Kittl, E. Simoen, C. Claeys, 2013 .

LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric

E. Simoen, C. Claeys, N. Lukyanchikova, 2011 .

Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes

E. Simoen, C. Claeys, A. Poyai, 2003 .

Recovery behaviour resulting from thermal annealing in n-MOSFETs irradiated by 20 MeV protons

A. Mercha, E. Simoen, C. Claeys, 2003 .

Study of metal barrier deposition-induced damage to porous low-k materials

Christopher J. Wilson, Cor Claeys, Larry Zhao, 2011 .

Radiation tolerance of Si1 − yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

E. Simoen, C. Claeys, M. B. González, 2014 .

Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs

N. Horiguchi, A. Veloso, V. Paraschiv, 2013, 2013 22nd International Conference on Noise and Fluctuations (ICNF).

Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

B. Govoreanu, E. Simoen, C. Claeys, 2021, IEEE Transactions on Electron Devices.

Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate

B. T. Chan, D. Mocuta, B. Govoreanu, 2019 .

Defect engineering aspects of advanced Ge process modules

K. Opsomer, E. Simoen, C. Claeys, 2008 .

Leakage current study of Si1−xCx embedded source/drain junctions

Shawn G. Thomas, R. Loo, P. Verheyen, 2008 .

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon

E. Simoen, C. Claeys, J. M. Rafí, 2007 .

On the Effect of Lead on Irradiation Induced Defects in Silicon

E. Simoen, C. Claeys, J. Barbot, 2005 .

DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

Deep level investigation of INGAAS on INP layer

N. Collaert, Wei Li, E. Simoen, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

E. Simoen, C. Claeys, J. M. Rafí, 2007, 2007 Spanish Conference on Electron Devices.

The lower boundary of the hydrogen concentration required for enhancing oxygen diffusion and thermal donor formation in Czochralski silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon

E. Simoen, C. Claeys, J. Vanhellemont, 1997 .

Si versus Ge for future microelectronics

G. Eneman, J. Mitard, E. Simoen, 2010 .

Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance

E. Simoen, Andre Stesmans, A. Stesmans, 2006 .

Paramagnetic point defects at interfacial layers in biaxial tensile strained (100)Si/SiO2

Cor Claeys, Eddy Simoen, Andre Stesmans, 2008 .

Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

A. Lauwers, R. Loo, G. Eneman, 2005 .

Radiation damage in Si photodiodes by high-temperature irradiation

E. Simoen, C. Claeys, K. Takakura, 2003 .

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

E. Simoen, C. Claeys, P. Clauws, 2001 .

Electrical Properties of Metals in Si and Ge

E. Simoen, C. Claeys, 2018 .

Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

M. Heyns, E. Simoen, C. Claeys, 1996 .

Film‐edge‐induced dislocation generation in silicon substrates. II. Application of the theoretical model for local oxidation processes on (001) silicon substrates

C. Claeys, J. Vanhellemont, S. Amelinckx, 1987 .

The behavior of silicon p‐n junction‐based devices at liquid helium temperatures

L. Deferm, B. Dierickx, E. Simoen, 1991 .

The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates

E. Simoen, C. Claeys, G. Vanstraelen, 1994 .

The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime

E. Simoen, C. Claeys, 1993 .

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

E. Simoen, C. Claeys, W. Fahrner, 2005 .

Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

R. Loo, M. Caymax, A. O'Neill, 2007 .

Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction

P. Agopian, E. Simoen, C. Claeys, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Uniaxial and/or Biaxial Strain Influence on MuGFET Devices

P. Agopian, E. Simoen, C. Claeys, 2012 .

Insights in low frequency noise of advanced and high-mobility channel transistors

A. Veloso, M. Jurczak, P. Fazan, 2012, 2012 International Electron Devices Meeting.

Ge content and recess depth dependence of the band-to-band tunneling current in Si1-xGex/Si hetero-junctions

G. Eneman, E. Simoen, C. Claeys, 2011, Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011.

GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes

A. Thean, N. Collaert, J. Mitard, 2016, IEEE Electron Device Letters.

Impact of the Channel Doping on the Low-Frequency Noise of Silicon Vertical Nanowire pFETs

A. Veloso, P. Matagne, E. Simoen, 2022, Solid-State Electronics.

Experimental comparison between relaxed and strained Ge pFinFETs

N. Collaert, J. Mitard, L. Witters, 2017, 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

E. Simoen, C. Claeys, G. Tonelli, 2003 .

On the Low-Frequency Noise of pMOSFETs With Embedded SiGe Source/Drain and Fully Silicided Metal Gate

E. Simoen, C. Claeys, P. Verheyen, 2007, IEEE Electron Device Letters.

The Low-Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions

R. Loo, P. Verheyen, E. Simoen, 2007 .

Diffusion and Solubility of Dopants in Germanium

E. Simoen, C. Claeys, 2007 .

The influence of annealing ambient on the shrinkage kinetics of oxidation‐induced stacking faults in silicon

C. Claeys, G. Declerck, R. V. Overstraeten, 1979 .

Fin width influence on analog performance of SOI and bulk FINFETs

P. Agopian, E. Simoen, C. Claeys, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs

P. Agopian, E. Simoen, C. Claeys, 2014 .

Zero-Temperature-Coefficient of planar and MuGFET SOI devices

E. Simoen, C. Claeys, J. Martino, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Tunnel-FET Evolution and Applications for Analog Circuits

R. Rooyackers, P. Agopian, E. Simoen, 2022, Journal of Integrated Circuits and Systems.

Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Gabriel Augusto da Silva, E. Simoen, C. Claeys, 2020, IEEE Transactions on Device and Materials Reliability.

Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view

N. Collaert, R. Rooyackers, P. Agopian, 2019, Semiconductor Science and Technology.

Total ionizing dose influence on proton irradiated triple gate SOI Tunnel FETs

R. Rooyackers, P. Agopian, E. Simoen, 2018, Journal of Integrated Circuits and Systems.

Proton radiation effects on the self-aligned triple gate SOI p-type tunnel FET output characteristic

R. Rooyackers, P. Agopian, E. Simoen, 2017, 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).

Enhanced dynamic threshold voltage UTBB SOI nMOSFETs

E. Simoen, C. Claeys, J. Martino, 2015 .

The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

P. Agopian, E. Simoen, C. Claeys, 2014, 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).

of X-Ray Radiation Dose Rate on Triple Gate SOl FinFETs Parameters

P. Agopian, E. Simoen, C. Claeys, 2014 .

Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior

P. Agopian, E. Simoen, C. Claeys, 2013 .

The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures

A. Veloso, M. Jurczak, M. Aoulaiche, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K

E. Simoen, C. Claeys, J. Martino, 1996 .

Operation of Majority and Minority Carrier MOSFET's at Liquid Helium Temperature

B. Dierickx, E. Simoen, C. Claeys, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

Detailed low frequency noise assessment on GAA NW n-channel FETs

D. Linten, E. Simoen, C. Claeys, 2021 .

Improved physics-based analysis to discriminate the flicker noise origin at very low temperature and drain voltage polarization

N. Collaert, A. Veloso, E. Simoen, 2020 .

Bulk defect induced low-frequency noise in n/sup +/-p silicon diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1998 .

Radiation effect on n-MOSFETs fabricated in a BiCMOS process

E. Simoen, C. Claeys, M. Nakabayashi, 2002 .

Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon

E. Simoen, C. Claeys, J. M. Rafí, 2005 .

Low frequency noise performance of gate-first and replacement metal gate CMOS technologies

N. Horiguchi, A. Veloso, V. Paraschiv, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs

E. Simoen, C. Claeys, N. Horiguchi, 2012, IEEE Electron Device Letters.

Point-Defect Generation in Ni-, Pd-, and Pt-Germanide Schottky Barriers on n -Type Germanium

K. Opsomer, C. Detavernier, K. Maex, 2007 .

Electron detection by means of silicon solid state imagers

I. Debusschere, C. Claeys, G. Declerck, 1988 .

Germanium-based technologies : from materials to devices

Cor L. Claeys, E. Simoen, C. Claeys, 2007 .

Anomalous kink-related excess noise in MOSFETs at 4.2 K

Eddy Simoen, B. Dierickx, C. Claeys, 1991 .

Analytical model for the current-voltage characteristics of a silicon resistor at liquid helium temperatures

L. Deferm, B. Dierickx, E. Simoen, 1990 .

The charge transport in a silicon resistor at liquid-helium temperatures

L. Deferm, B. Dierickx, E. Simoen, 1990 .

Freeze-out effects on NMOS transistor characteristics at 4.2 K

B. Dierickx, E. Simoen, C. Claeys, 1989 .

Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K

Eddy Simoen, B. Dierickx, C. Claeys, 1988 .

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Eddy Simoen, Joan Marc Rafí, Johan Lauwaert, 2009 .

Impact of oxygen related extended defects on silicon diode characteristics

Cor Claeys, Eddy Simoen, Jan Vanhellemont, 1995 .

Defect Analysis in Semiconductor Materials Based on p-n Junction Diode Characteristics

E. Simoen, C. Claeys, J. Vanhellemont, 2007 .

Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

E. Simoen, C. Claeys, J. M. Rafí, 2006 .

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

E. Simoen, C. Claeys, W. Fahrner, 2002 .

Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Gabriel Augusto da Silva, E. Simoen, C. Claeys, 2020 .

Effect of Chemicals on Metal Contamination on Silicon Wafers

C. Claeys, M. Schaekers, M. Tilli, 1992 .

A Foveated Retina-Like Sensor Using CCD Technology

Giulio Sandini, Paolo Dario, Fausto Fantini, 1989, Analog VLSI Implementation of Neural Systems.

Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults

C. Claeys, G. Declerck, R. J. V. Overstrateten, 1978 .

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

E. Simoen, C. Claeys, E. Simoen, 1992 .

Characterization and Detection of Metals in Silicon and Germanium

E. Simoen, C. Claeys, 2018 .

Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography

H. Richter, C. Claeys, J. Vanhellemont, 1996 .

The Use of Chlorinated Oxides and Intrinsic Gettering Techniques for VLSI Processing

C. Claeys, 1983 .

Radiation damage in Si1−xGex heteroepitaxial devices

C. Claeys, K. Hayama, H. Ohyama, 1999 .

Gettering mechanisms in silicon

G. Cerofolini, H. Bender, C. Claeys, 1988 .

The role of dopant and segregation annealing in silicon p-n junction gettering

G. Cerofolini, H. Bender, C. Claeys, 1987 .

Contact technology schemes for advanced Ge and III-V CMOS technologies

J. Kittl, E. Simoen, C. Claeys, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Recent progress in the understanding of crystallographic defects in silicon

C. Claeys, J. Vanhellemont, 1993 .

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

E. Simoen, C. Claeys, O. Lebedev, 2003 .

Evaluations of intrinsic time dependent dielectric breakdown of dielectric copper diffusion barriers

Christopher J. Wilson, G. Beyer, R. Degraeve, 2011 .

Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

E. Simoen, C. Claeys, M. B. González, 2014 .

Increased Radiation Hardness of Short-Channel Electron-Irradiated Si1-xGex Source/Drain p-Type Metal Oxide Semiconductor Field-Effect Transistors at Higher Ge Content

E. Simoen, C. Claeys, M. B. González, 2013 .

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

E. Simoen, C. Claeys, M. B. González, 2012 .

Behavior of triple gate Bulk FinFETs with and without DTMOS operation

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2011, Ulis 2011 Ultimate Integration on Silicon.

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Eddy Simoen, Ben Kaczer, Maria Toledano-Luque, 2011 .

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

R. Loo, E. Simoen, C. Claeys, 2003 .

Characterization of Oxide Precipitates in Heavily B-Doped Silicon by Infrared Spectroscopy

E. Simoen, C. Claeys, O. Lebedev, 2004 .

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

R. Loo, E. Simoen, C. Claeys, 2002 .

Low-frequency noise of advanced memory devices

E. Simoen, C. Claeys, R. Ritzenthaler, 2015, 2015 International Conference on Noise and Fluctuations (ICNF).

The smaller the noisier? Low frequency noise diagnostics of advanced semiconductor devices

A. Vandooren, R. Rooyackers, E. Simoen, 2015, 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro).

Impact of thermal budget on the low-frequency noise of DRAM peripheral nMOSFETs

R. Ritzenthaler, T. Schram, N. Horiguchi, 2015, 2015 China Semiconductor Technology International Conference.

Noise analysis in advanced memory devices

M. Jurczak, M. Aoulaiche, E. Simoen, 2015, 2015 China Semiconductor Technology International Conference.

Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra

Cor Claeys, Eddy Simoen, Jae Woo Lee, 2014, IEEE Transactions on Electron Devices.

Low-frequency noise analysis of DRAM peripheral transistors with La cap

R. Ritzenthaler, T. Schram, N. Horiguchi, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Border Traps in Ge/III–V Channel Devices: Analysis and Reliability Aspects

Cor Claeys, Eddy Simoen, C. Merckling, 2013, IEEE Transactions on Device and Materials Reliability.

Analytical model for the 1∕f noise in the tunneling current through metal-oxide-semiconductor structures

Giuseppe Iannaccone, Cor Claeys, Eddy Simoen, 2009 .

The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures

C. Claeys, Gilbert Declerck, M. R. Tack, 1990 .

Radiation defects and degradation of Si photodiodes irradiated by neutrons at low temperature

E. Simoen, C. Claeys, K. Takakura, 2006 .

XRD Investigation of the Crystalline Quality of Sn Doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method

E. Simoen, C. Claeys, T. Nakashima, 2012 .

On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs

Eddy Simoen, B. Dierickx, C. Claeys, 1994 .

On the Variability of the Low-Frequency Noise in UTBOX SOI nMOSFETs

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2012 .

On the flicker noise in submicron silicon MOSFETs

Cor Claeys, Eddy Simoen, E. Simoen, 1999 .

RTS noise due to lateral isolation related defects in submicron nMOSFETs

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 1998 .

Identification of isolation-edge related random telegraph signals in submicron silicon metal–oxide–semiconductor field-effect transistors

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 1997 .

Hot-carrier stress effects on the amplitude of Random Telegraph Signals in small area Si p-MOSFETS

Cor Claeys, Eddy Simoen, E. Simoen, 1997 .

Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors

Cor Claeys, Eddy Simoen, E. Simoen, 1995 .

Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs

Cor Claeys, Eddy Simoen, B. Dierickx, 1993 .

Random Telegraph Signal Noise: A Probe for Hot-Carrier Degradation Effects in Submicrometer MOSFET's?

B. Dierickx, E. Simoen, C. Claeys, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Investigation of Drain Current RTS Noise in Small Area Silicon MOS Transistors

G. Ghibaudo, E. Simoen, B. Dierickx, 1991, ESSDERC '91: 21st European Solid State Device Research Conference.

Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

O. Richard, H. Bender, E. Simoen, 2002 .

Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices

C. Claeys, 2004 .

Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs

N. Collaert, J. Mitard, L. Witters, 2018, 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).

Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

N. Collaert, J. Mitard, L. Witters, 2017, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

A. Thean, N. Collaert, J. Mitard, 2016 .

Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes

A. Thean, N. Collaert, J. Mitard, 2016, IEEE Transactions on Electron Devices.

Impact of the low temperature operation on long channel strained Ge pFinFETs fabricated with STI first and last processes

A. Thean, N. Collaert, J. Mitard, 2016, 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Model for the Radiation Degradation of

E. Simoen, C. Claeys, K. Takakura, 2003 .

Model for the radiation degradation of polycrystalline silicon films

C. Claeys, K. Takakura, M. Nakabayashi, 2003 .

Extended-Defect Aspects of Ge-on-Si Materials and Devices

R. Loo, M. Caymax, G. Eneman, 2010 .

Processes in Ultrathin Buried Oxide Synthesis Stimulated by Low Dose Ion Implantation

C. Claeys, V. Litovchenko, A. Efremov, 1998 .

Factors determining the damage coefficients and the low-frequency noise in MeV proton-irradiated silicon diodes

E. Simoen, C. Claeys, H. Ohyama, 1998 .

Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices

E. Simoen, C. Claeys, 2002 .

The response of Si p - n junction diodes to proton irradiation

E. Simoen, C. Claeys, J. Vanhellemont, 1996 .

Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation

E. Simoen, C. Claeys, A. Poyai, 2002 .

Extraction of the minority carrier recombination lifetime from forward diode characteristics

E. Simoen, C. Claeys, J. Vanhellemont, 1995 .

On the impact of low fluence irradiation with MeV particles on silicon diode characteristics and related material properties

E. Simoen, C. Claeys, J. Vanhellemont, 1994 .

Impact of the Ge content on the radiation hardness of hetero-junction diodes in SiGe strained layers

M. Caymax, E. Simoen, C. Claeys, 1998 .

The impact of the Ge content on the characteristics of strained Si(1-x)Ge(x) epitaxial diodes before and after degradation by high energy particles

M. Caymax, E. Simoen, C. Claeys, 1998, 28th European Solid-State Device Research Conference.

Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium

K. Opsomer, C. Detavernier, K. Maex, 2008 .

Random telegraph signals in silicon‐on‐insulator metal‐oxide‐ semiconductor transistors

Cor Claeys, Eddy Simoen, E. Simoen, 1994 .

Retinalike space variant CCD sensor

Giulio Sandini, Paolo Dario, Fausto Fantini, 1990, Other Conferences.

Study of ΔID/ID of a single charge trap in utbox silicon films

M. Aoulaiche, E. Simoen, C. Claeys, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs

N. Horiguchi, A. Veloso, E. Simoen, 2020, IEEE Electron Device Letters.

1/f noise in deep submicron CMOS technology for RF and analogue applications

Cor Claeys, Eddy Simoen, Mercha Abdelkarim, 2004, SPIE International Symposium on Fluctuations and Noise.

Ionizing radiation hardening of a CCD technology

A. Alaerts, I. Debusschere, C. Claeys, 1992 .

On the origin of the 1∕f noise in shallow germanium p+-n junctions

Eddy Simoen, Sushant Sonde, E. Simoen, 2007 .

Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures

M. D. V. Martino, A. Thean, R. Rooyackers, 2016 .

Radiation damage of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation

E. Simoen, C. Claeys, S. Onoda, 2001, 31st European Solid-State Device Research Conference.

Impact of neutron irradiation on optical performance of InGaAsP laser diodes

E. Simoen, C. Claeys, M. Yoneoka, 2000 .

Interaction of the Sulphuric Acid Hydrogen Peroxide Mixture with Silicon Surfaces

Cor Claeys, Marc Heyns, Marc Meuris, 1994 .

Technological challenges of advanced CMOS processing and their impact on design aspects

Cor Claeys, C. Claeys, 2004, 17th International Conference on VLSI Design. Proceedings..

Impact of Metals on Silicon Devices and Circuits

E. Simoen, C. Claeys, 2018 .

Radiation effects in bulk silicon

C. Claeys, J. Vanhellemont, 1994 .

A study on radiation damage of IGBTs by 2-MeV electrons at different irradiation temperatures

E. Simoen, C. Claeys, M. Nakabayashi, 2004, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon

E. Simoen, C. Claeys, V. Neimash, 2003 .

Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes

Eddy Simoen, C. Claeys, Sumio Matsuda, 2003 .

Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes

E. Simoen, C. Claeys, E. Gaubas, 2000 .

Effective generation‐recombination parameters in high‐energy proton irradiated silicon diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1996 .

Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

E. Simoen, C. Claeys, J. M. Rafí, 2009 .

High-energy proton radiation induced defects in tin-doped n-type silicon

A. Larsen, E. Simoen, C. Claeys, 2001 .

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

A. Larsen, E. Simoen, C. Claeys, 2002 .

Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation

A. Mercha, E. Simoen, C. Claeys, 2007 .

On the impact of the capture rates on the generation/recombination lifetime ratio of a single deep level

Eddy Simoen, C. Claeys, E. Simoen, 1999 .

Effects of electron irradiation on SiGe devices

G. Eneman, E. Simoen, C. Claeys, 2010 .

Effects of high-temperature gamma ray and electron irradiation on npn Si transistors

E. Simoen, C. Claeys, S. Onoda, 2001, RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605).

Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

E. Simoen, C. Claeys, K. Hayama, 1997 .

Degradation and recovery of Si diodes by 20-MeV protons and 220-MeV carbon particles

E. Simoen, C. Claeys, K. Kobayashi, 1997 .

Influence of the substrate on the degradation of irradiated Si diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1996 .

Substrate effects on the degradation of irradiated Si diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1995, Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems.

Defect assessment of irradiated STI diodes

E. Simoen, C. Claeys, M. Nakabayashi, 2002 .

Radiation defects in STI silicon diodes and their effects on device performance

E. Simoen, C. Claeys, A. Poyai, 2001 .

Evidence for an alternative, hole‐trapping related random telegraph signal mechanism in n‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors

E. Simoen, C. Claeys, 1993 .

Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's

Cor Claeys, Eddy Simoen, E. Simoen, 1993 .

The Role of Oxygen in Silicon p–n Junction Gettering

G. Cerofolini, H. Bender, C. Claeys, 1987 .

Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer Substrates

R. Loo, M. Caymax, G. Eneman, 2006 .

Study of ohmic contacts to n-type Ge: Snowplow and laser activation

E. Rosseel, J. Geypen, H. Bender, 2011 .

Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics

Eddy Simoen, Luigi Pantisano, Wim Deweerd, 2006 .

Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

E. Simoen, C. Claeys, J. Barbot, 2005 .

Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current

E. Simoen, C. Claeys, A. Poyai, 2002 .

Accurate extraction of the diffusion current in silicon p-n junction diodes

E. Simoen, C. Claeys, J. Kątcki, 1998 .

Optimized Diode Analysis of Electrical Silicon Substrate Properties

E. Simoen, C. Claeys, D. Tomaszewski, 1998 .

Factors determining the lifetime damage coefficients and the low-frequency noise in MeV proton irradiated silicon diodes

E. Simoen, C. Claeys, H. Ohyama, 1999 .

DLTS studies of high-temperature electron irradiated Cz n-Si

E. Simoen, C. Claeys, J. M. Rafí, 2004 .

Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon

E. Simoen, C. Claeys, J. M. Rafí, 2003 .

Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium

K. Opsomer, C. Detavernier, K. Maex, 2006 .

Direct observation of the 1/E dependence of time dependent dielectric breakdown in the presence of copper

Christopher J. Wilson, Larry Zhao, Gerald Beyer, 2011 .

Degradation of GaN LEDs by electron irradiation

E. Simoen, C. Claeys, T. Nakashima, 2010 .

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

E. Simoen, C. Claeys, O. Lebedev, 2002 .

A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress

Cor Claeys, Eddy Simoen, Ludo Deferm, 1998 .

Impact of Ge Content and Recess Depth on the Leakage Current in Strained $\hbox{Si}_{1-x}\hbox{Ge}_{x}/\hbox{Si}$ Heterojunctions

G. Eneman, E. Simoen, C. Claeys, 2011, IEEE Transactions on Electron Devices.

Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions

G. Eneman, E. Simoen, C. Claeys, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Advanced Semiconductor Materials and Devices—Outlook

Cor Claeys, Eddy Simoen, E. Simoen, 2002 .

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

Marcelo Antonio Pavanello, Cor Claeys, Eddy Simoen, 2007 .

Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Impact of high temperature processing on bulk defects in czochralski silicon

H. Bender, C. Claeys, G. Declerck, 1983 .

The ’’inhibition effect’’ of a trichloroethane oxidation to suppress the stacking‐fault nucleation in silicon

C. Claeys, G. Declerck, R. V. Overstraeten, 1980 .

ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON

H. Bender, C. Claeys, G. Declerck, 1983 .

Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs

Eddy Simoen, Nadine Collaert, Abdelkarim Mercha, 2008 .

Low frequency noise characterization of advanced and end of the roadmap devices

E. Simoen, C. Claeys, E. Simoen, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Low-Frequency Noise Performance of HfO2-Based Gate Stacks

Eddy Simoen, Luigi Pantisano, Abdelkarim Mercha, 2005 .

Tunneling 1/ f ? noise in 5 nm HfO 2/2.1 nm SiO 2 gate stack n-MOSFETs

Eddy Simoen, Luigi Pantisano, Abdelkarim Mercha, 2005 .

Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

A. Mercha, L. Pantisano, E. Simoen, 2004, IEEE Transactions on Electron Devices.

Noise as a Diagnostic Tool for Semiconductor Material and Device Characterization

Cor Claeys, Eddy Simoen, E. Simoen, 1998 .

Impact of the high vertical electric field on low-frequency noise in thin-gate oxide MOSFETs

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2003 .

Analytical model for the kink in nMOSTs operating at Liquid Helium Temperatures (LHT)

Eddy Simoen, B. Dierickx, B. Dierickx, 1990 .

Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

Geert Willems, Michael Campbell, Cor Claeys, 1993 .

Fully integrated CMOS pixel detector for high energy particles

I. Debusschere, C. Claeys, G. Declerck, 1989 .

Temperature impact on the tunnel fet off-state current components

Cor Claeys, Rita Rooyackers, Paula Ghedini Der Agopian, 2012 .

Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation

E. Simoen, C. Claeys, M. G. C. de Andrade, 2011, IEEE Electron Device Letters.

Low-frequency noise in triple-gate n-channel bulk FinFETs

N. Collaert, M. Aoulaiche, E. Simoen, 2011, 2011 21st International Conference on Noise and Fluctuations.

Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

Rita Rooyackers, Anne Vandooren, Aaron Thean, 2017 .

Film‐edge‐induced dislocation generation in silicon substrates. I. Theoretical model

C. Claeys, Jan Vanhellemont, C. Claeys, 1987 .

Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs

Eddy Simoen, C. Claeys, Joao Antonio Martino, 1993 .

Short-channel epitaxial germanium PMOS transistors

R. Loo, M. Caymax, M. Heyns, 2010 .

On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers

R. Loo, G. Eneman, V. Simons, 2005 .

Hydrogen implantation into (100) silicon: A study of the released damage

G. Cerofolini, C. Claeys, G. Ottaviani, 1989 .

Low-frequency noise in silicon-on-insulator devices and technologies

Eddy Simoen, Abdelkarim Mercha, Corneel Claeys, 2007 .

Source/Drain junction integration issues in submicron Ge MOSFETs

K. Opsomer, A. Satta, G. Eneman, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Quantifying self-heating effects with scaling in globally strained Si MOSFETs

Sarah H. Olsen, Roger Loo, Yang Yang, 2007 .

Quantifying Self-Heating Effects in Strained Si MOSFETs with Scaling

R. Agaiby, R. Loo, A. O'Neill, 2006, 2006 European Solid-State Device Research Conference.

Analysis of junction leakage in advanced germanium P+/n junctions

E. Simoen, C. Claeys, G. Eneman, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin-gate-oxide partially depleted SOI NMOSFETs

Cor Claeys, Eddy Simoen, Francesca Campabadal, 2005 .

Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

A. Mercha, E. Simoen, C. Claeys, 2004, IEEE Transactions on Electron Devices.

Low-frequency noise investigation of n-channel 3D devices

E. Simoen, C. Claeys, J. Martino, 2015 .

DC and noise characteristics of underlap Ultra-Thin BOX SOI nMOSFETs

E. Simoen, C. Claeys, V. Kudina, 2015, 2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO).

Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs

E. Simoen, C. Claeys, N. Garbar, 2015 .

Low frequency noise characterization in n-channel FinFETs

Cor Claeys, Eddy Simoen, Nadine Collaert, 2012 .

Physics of fluctuation processes in downscaled silicon MOSFETs

E. Simoen, C. Claeys, N. Lukyanchikova, 2009 .

On the Origin of the Excess Low-Frequency Noise in Graded-Channel Silicon-on-Insulator nMOSFETs

T. M. Chung, D. Flandre, J. Raskin, 2007, IEEE Electron Device Letters.

The low-frequency noise behaviour of graded-channel SOI nMOSFETs

Denis Flandre, Marcelo Antonio Pavanello, Eddy Simoen, 2007 .

Defect Engineering and Stress Control in Advanced Devices on High-Mobility Substrates

G. Eneman, E. Simoen, C. Claeys, 2006, 2006 25th International Conference on Microelectronics.

Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors

Eddy Simoen, Abdelkarim Mercha, A. Mercha, 2004 .

Inversion Layer Quantization Impact on the Interpretation of 1/f Noise in Deep Submicron CMOS Transistors

A. Mercha, E. Simoen, C. Claeys, 2002, 32nd European Solid-State Device Research Conference.

The 1/f/sup 1.7/ noise in submicron SOI MOSFETs with 2.5 nm nitrided gate oxide

E. Simoen, C. Claeys, K. De Meyer, 2002 .

The Noise in Submicron SOI MOSFETs With 2.5 nm Nitrided Gate Oxide

Cor Claeys, Eddy Simoen, K. De Meyer, 2002 .

Advanced CMOS Integration Technologies for Future Mobile Applications

C. Claeys, E. Simoen, E. Simoen, 2019, 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).

High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Eddy Simoen, Abdelkarim Mercha, Joan Marc Rafí, 2004 .

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

E. Simoen, C. Claeys, Liang He, 2023, IEEE Transactions on Electron Devices.

Impact of silicidation on the excess noise behaviour of MOS transistors

Cor Claeys, Eddy Simoen, Ewout Vandamme, 1995 .

Structure and evolution of the displacement field in hydrogen-implanted silicon.

G. Cerofolini, Orlandini, C. Claeys, 1990, Physical review. B, Condensed matter.

Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

E. Simoen, C. Claeys, T. Nakashima, 2012 .

Extended defects in germanium : fundamental and technological aspets

E. Simoen, C. Claeys, 2009 .

Extended Defects Created by Light Ion Implantation in Ge

E. Simoen, C. Claeys, M. Beaufort, 2008 .

Processing andDefect Control inAdvanced GeTechnologies

C. Claeys, E. Simoen, A. Satta, 2007 .

Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium

E. Simoen, C. Claeys, H. Vercammen, 2004 .

Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

E. Simoen, C. Claeys, M. B. González, 2011 .

GaAs Based Field Effect Transistors for Radiation-Hard Applications

E. Simoen, C. Claeys, 2002 .

Induced lattice defects in InGaAsP laser diodes by high-temperature gamma ray irradiation

E. Simoen, C. Claeys, S. Onoda, 2001 .

Impact of lattice defects on the performance degradation of Si photodiodes by high-temperature gamma and electron irradiation

Eddy Simoen, Hidenori Ohyama, Shinobu Onoda, 2001 .

Lifetime and leakage current considerations in metal-doped germanium

E. Simoen, C. Claeys, M. Meuris, 2007 .

A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium

K. Opsomer, C. Detavernier, K. Maex, 2006 .

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors

Eddy Simoen, S. Decoutere, C. Claeys, 1996 .

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium

K. Opsomer, C. Detavernier, K. Maex, 2006 .

Metal In-Diffusion during Fe and Co-Germanidation of Germanium

K. Opsomer, C. Detavernier, K. Maex, 2007 .

The Perspectives of Silicon‐on‐Insulator Technologies for Cryogenic Applications

Cor Claeys, Eddy Simoen, E. Simoen, 1994 .

Trends in microelectronics, optical detectors, and biosensors

Andrew Campitelli, C. Van Hoof, Herman Maes, 2001 .

Understanding and optimizing the floating body retention in FDSOI UTBOX

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2016 .

Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

E. Simoen, C. Claeys, M. G. C. de Andrade, 2012, IEEE Transactions on Electron Devices.

Leakage Current Control in Recessed SiGe Source/Drain Junctions

H. Bender, L. Washington, F. Nouri, 2007 .

Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS

G. Badenes, R. Rooyackers, E. Simoen, 2001 .

In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces†

C. Claeys, J. Vanhellemont, J. Landuyt, 1995 .

Impact of the generation width on the lifetime extraction in Cz silicon p-n junctions

E. Simoen, C. Claeys, A. Poyai, 1999 .

High-temperature performance of state-of-the-art triple-gate transistors

Sorin Cristoloveanu, Cor Claeys, Eddy Simoen, 2007, Microelectron. Reliab..

Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs

E. Simoen, C. Claeys, S. Cristoloveanu, 2011, 2011 International Reliability Physics Symposium.

Influence of back-gate bias and process conditions on the gamma-degradation of the transconductance of MuGFETs

A. De Keersgieter, N. Collaert, E. Simoen, 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.

Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle

Cor Claeys, Eddy Simoen, K. Kobayashi, 2001, Microelectron. Reliab..

Effects of electron and proton irradiation on embedded SiGe source/drain diodes

Midorikawa, E. Simoen, C. Claeys, 2008 .

Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation

Eddy Simoen, C. Claeys, Hidenori Ohyama, 2003 .

Radiation damage of Si photodiodes by high-temperature irradiation

E. Simoen, C. Claeys, K. Takakura, 2003 .

Irradiation temperature dependence of radiation damage in STI Si diodes

E. Simoen, C. Claeys, K. Takakura, 2003 .

Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes

E. Simoen, C. Claeys, A. Poyai, 2000 .

γ-irradiation hardness of short-channel nMOSFETs fabricated in a SOI technology

Eddy Simoen, V. G. Litovchenko, A. A. Evtukh, 2002 .

OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices

N. Collaert, R. Rooyackers, P. Agopian, 2019, 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes

V. B. Sivieri, A. Thean, R. Rooyackers, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs

E. Simoen, C. Claeys, R. Doria, 2015 .

Challenges for advanced end of the roadmap, beyond Si and beyond CMOS technologies

E. Simoen, C. Claeys, E. Simoen, 2017, 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).

The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs

P. Agopian, E. Simoen, C. Claeys, 2014, 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs

peixiong zhao, E. Zhang, D. Fleetwood, 2010, IEEE Transactions on Nuclear Science.

Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs

Cor Claeys, Jerome Mitard, Eddy Simoen, 2009, IEEE Transactions on Nuclear Science.

Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio

peixiong zhao, K. Galloway, E. Simoen, 2009, IEEE Transactions on Nuclear Science.

Detailled characterisation of SOI n-FinFETs at very low temperature

E. Simoen, C. Claeys, A. Benfdila, 2013, International Conference on Ultimate Integration on Silicon.

The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. I. The kink‐related counterclockwise hysteresis regime

Cor Claeys, Eddy Simoen, E. Simoen, 1993 .

A two-dimensional model for the kink in nMOSTs operating at liquid helium temperatures

L. Deferm, C. Claeys, E. Simeon, 1989, Proceedings of the Workshop on Low Temperature Semiconductor Electronics,.

Low-Frequency Noise Assessment of Work Function Engineering Cap Layers in High-k Gate Stacks

R. Ritzenthaler, T. Schram, N. Horiguchi, 2019, ECS Journal of Solid State Science and Technology.

Low-frequency and random telegraph noise performance of Ge-based and III–V devices on a Si platform

Cor Claeys, Jerome Mitard, Eddy Simoen, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics

Eddy Simoen, C. Claeys, Marc Aoulaiche, 2014 .

Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

R. Loo, J. Mitard, E. Simoen, 2009 .

Impact of the substrate quality on the low frequency noise of silicon diodes

E. Simoen, C. Claeys, J. Vanhellemont, 2008 .

Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies

Cor Claeys, Eddy Simoen, E. Simoen, 2000 .

Impact of the substrate on the low‐frequency noise of silicon n+p junction diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1995 .

Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes

E. Simoen, C. Claeys, J. Vanhellemont, 1996 .

Gate oxide thinning as related to doping effects

P. Bellutti, I. Debusschere, C. Claeys, 1990, Eur. Trans. Telecommun..

Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ Source/Drain Junctions

R. Loo, P. Verheyen, E. Simoen, 2009, IEEE Transactions on Electron Devices.

Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

A. Hikavyy, H. Bender, R. Loo, 2008, IEEE Transactions on Electron Devices.

Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

H. Bender, R. Loo, G. Eneman, 2007 .

Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy

N. Horiguchi, R. Loo, G. Eneman, 2019, 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).

Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

G. Eneman, E. Simoen, C. Claeys, 2011 .

Defects, Junction Leakage and Electrical Performance of Ge pFET Devices

R. Loo, M. Caymax, M. Heyns, 2009 .

Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Eddy Simoen, Marc Aoulaiche, C. Claeys, 2014 .

Semiconductor film band gap influence on retention time of UTBOX SOI 1T-DRAM using pulsed back gate bias

M. Aoulaiche, E. Simoen, C. Claeys, 2013, 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2013 .

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

E. Simoen, C. Claeys, A. Veloso, 2012, IEEE Electron Device Letters.

The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

N. Collaert, M. Aoulaiche, E. Simoen, 2012, 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).

Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices

M. G. C. de Andrade, N. Collaert, M. Jurczak, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

n-Channel bulk and DTMOS FinFETs: Investigation of GIDL and gate leakage currents

E. Simoen, C. Claeys, J. Martino, 2016, 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).

Origin of wide retention distribution in 1T Floating Body RAM

G. Groeseneken, E. Simoen, C. Claeys, 2012, 2012 IEEE International SOI Conference (SOI).

FISH SOI MOSFET: Modeling, Characterization and Its Application to Improve the Performance of Analog ICs

Eddy Simoen, Salvador Pinillos Gimenez, Daniel Manha Alati, 2011 .

Film‐edge‐induced dislocation generation in silicon substrates. III. High voltage transmission electron microscopy observations and theoretical results for (1̄11) and (011) silicon substrates

C. Claeys, J. Vanhellemont, 1988 .

Local oxidation induced dislocation generation near [100] Si3N4 film edges

C. Claeys, G. Declerck, R. V. Overstraeten, 1983 .

HVEM studies of nitride film edge induced defect generation in silicon substrates

C. Claeys, J. Vanhellemont, J Vanlanduyt, 1987 .

Comparative study of vertical GAA TFETs and GAA MOSFETs in function of the inversion coefficient

A. Vandooren, R. Rooyackers, E. Simoen, 2016, 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2014, Microelectron. Reliab..

Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry

Cor Claeys, Eddy Simoen, N. Lukyanchikova, 2013, Microelectron. Reliab..

Analysis of the Total Resistance in Standard and Strained FinFET Devices With and Without the Use of SEG

E. Simoen, C. Claeys, J. Martino, 2009 .

Impact of Selective Epitaxial Growth and Uniaxial/Biaxial Strain on DIBL Effect Using Triple Gate FinFETs

E. Simoen, C. Claeys, L. Gualberto, 2010 .

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

E. Simoen, C. Claeys, 2004 .

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

E. Simoen, C. Claeys, R. Doria, 2011 .

Performance of Source Follower Buffers Implemented with Standard and Strained Triple-Gate nFinFETs

N. Collaert, R. Rooyackers, E. Simoen, 2010 .

Analytical Model for the Impact of the Twin Gate on the Floating-Body-Related Low-Frequency Noise Overshoot in Silicon-on-Insulator MOSFETs

E. Simoen, C. Claeys, N. Lukyanchikova, 2006, IEEE Transactions on Electron Devices.

Excess Lorentzian noise in partially depleted SOI nMOSFETs induced by an accumulation back-gate bias

E. Simoen, C. Claeys, N. Lukyanchikova, 2004, IEEE Electron Device Letters.

Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2003 .

Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2003 .

Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

Eddy Simoen, Joao Antonio Martino, N. Lukyanchikova, 2006 .

The low-frequency noise overshoot in partially depleted n-channel silicon-on-insulator twin-MOST's

Eddy Simoen, C. Claeys, E. Simoen, 1994 .

Back-gate induced random telegraph signal noise in fully-depleted silicon-on-insulator nMOSFETs

E. Simoen, C. Claeys, J. Vermeiren, 1993 .

Random Telegraph Signal related low-frequency noise peaks in submicrometer Si MOST's

E. Simoen, B. Dierickx, C. Claeys, 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

Substrate current characteristics of Si N- and PMOST's at 4.2 K

E. Simoen, C. Claeys, 1992 .

B. Dierickx, E. Simoen, C. Claeys, 1992 .

The importance of the internal bulk-source potential on the low temperature kink in NMOSTs

L. Deferm, E. Simoen, C. Claeys, 1991 .

Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique

Guido Groeseneken, C. Claeys, Dirk Wouters, 1989 .

Analysis of temperature-induced saturation threshold voltage degradation in deep-submicrometer ultrathin SOI MOSFETs

E. Simoen, C. Claeys, J. Martino, 2005, IEEE Transactions on Electron Devices.

Effect of gate interface on performance degradation of irradiated SiC-MESFET

E. Simoen, C. Claeys, M. Yoneoka, 2007 .

Radiation source dependence of device performance degradation for 4H-SiC MESFETs

E. Simoen, C. Claeys, K. Takakura, 2006 .

Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation

Eddy Simoen, Sumio Matsuda, Hidenori Ohyama, 2006 .

Effects of radiation-induced defects on device performance in electron-irradiated SiC-MESFETs

E. Simoen, C. Claeys, K. Takakura, 2006 .

Degradation of SiC-MESFETs by irradiation

E. Simoen, C. Claeys, K. Takakura, 2008 .

Back bias influence on analog performance of pTFET

A. Vandooren, R. Rooyackers, E. Simoen, 2013, 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Random Telegraph Signals in Semiconductor Devices

Eddy Simoen, Cor L. Claeys, E. Simoen, 2016 .

Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETs

A. Thean, N. Collaert, A. Veloso, 2016, IEEE Electron Device Letters.

Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs

N. Collaert, A. Mercha, E. Simoen, 2010 .

Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs

Cor Claeys, E. Simoen, T. Hakata, 1998 .

Impact of 20-MeV /spl alpha/-ray irradiation on the V-band performance of AlGaAs pseudomorphic HEMTs

E. Simoen, C. Claeys, M. Yoneoka, 2000 .

Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs

E. Simoen, C. Claeys, M. Yoneoka, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components

E. Simoen, C. Claeys, A. Poyai, 2003 .

Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors

E. Simoen, C. Claeys, Guilei Wang, 2017, 2017 China Semiconductor Technology International Conference (CSTIC).

Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

N. Collaert, A. Mercha, E. Simoen, 2009 .

Invited) Status and Trends in Ge CMOS Technology

Geert Hellings, Cor Claeys, Jerome Mitard, 2013 .

Device Performance as a Metrology Tool to Detect Metals in Silicon

E. Simoen, C. Claeys, 2019, physica status solidi (a).

Impact strain engineering on gate stack quality and reliability

Eddy Simoen, Felice Crupi, Gino Giusi, 2008 .