T. Kimoto

H. Matsunami, T. Kimoto, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

A. Ellison, A. Henry, Q. Wahab, 1997 .

Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition

T. Kimoto, K. Danno, Tsutomu Hori, 2007 .

Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

T. Kimoto, A. Manabe, H. Saitoh, 2006 .

The effects of displacement threshold irradiation energy on deep levels in p-type 6H-SiC

T. Kimoto, G. Alfieri, 2011, Journal of physics. Condensed matter : an Institute of Physics journal.

4H-SiC MOSFETs on (03-38) Face

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2002 .

Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

H. Matsunami, T. Kimoto, Y. Sugawara, 2000 .

The effects of N+ dose in implantation into 6h-sic epilayers

H. Matsunami, T. Kimoto, A. Itoh, 1995 .

Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Nuclear Transmutation Doping of Phosphorus into 6H-SiC

H. Matsunami, T. Kimoto, S. Kanazawa, 2000 .

Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

W. J. Choyke, T. Ohshima, T. Kimoto, 2010 .

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Fujihira, 2003 .

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

W. J. Choyke, T. Ohshima, T. Kimoto, 2010 .

Characterization of Silicon Dioxide Films on a 4H-SiC Si(0001) Face by Fourier Transform Infrared (FT-IR) Spectroscopy and Cathodoluminescence Spectroscopy

T. Kimoto, K. Matsuda, H. Sako, 2011, Applied spectroscopy.

Erratum to "Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition". [J. Crystal Growth 306 (2007) 297]

T. Kimoto, K. Danno, Tsutomu Hori, 2007 .

Optical Properties of Silicon Carbide: Some Recent Developments

W. J. Choyke, T. Kimoto, G. Pensl, 1997 .

Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping

T. Kimoto, J. Suda, G. Feng, 2010 .

Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals

T. Kimoto, S. Sasaki, J. Suda, 2012 .

Photoluminescence of homoepitaxial 3C-SiC on sublimation-grown 3C-SiC substrates

H. Matsunami, T. Kimoto, Katsushi Nishino, 1995 .

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, Fukuji Inoko, 2003 .

Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H–SiC Homoepitaxial Film

H. Matsunami, T. Kimoto, F. Inoko, 2002 .

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

T. Kimoto, K. Danno, 2007 .

Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

Tsunenobu Kimoto, Seigo Mori, T. Kimoto, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations

T. Kimoto, J. Suda, T. Kachi, 2022, IEEE Electron Device Letters.

Complementary junction field-effect transistor logic gate operational at 300$^\circ$C with 1.4 V supply voltage

T. Kimoto, M. Kaneko, M. Nakajima, 2021, 2106.09902.

Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors With Reduced Base Spreading Resistance

T. Kimoto, J. Suda, S. Asada, 2019, IEEE Transactions on Electron Devices.

Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC

T. Kimoto, S. Sasaki, J. Suda, 2012 .

Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing

H. Matsunami, T. Kimoto, G. Pensl, 2007 .

Single versus double ion implantation: a deep level study

T. Kimoto, G. Alfieri, 2009 .

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

W. J. Choyke, T. Ohshima, T. Kimoto, 2007 .

The Development of 4H-SiC {03-38} Wafers

H. Matsunami, T. Kimoto, S. Nishino, 2002 .

Fast Epitaxial Growth of 4H–SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, K. Fujihira, 2001 .

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, H. Fujiwara, 2004 .

High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

H. Matsunami, T. Kimoto, Y. Sugawara, 2002 .

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

H. Matsunami, T. Kimoto, G. Pensl, 2004 .

A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching

T. Kimoto, J. Suda, 2009 .

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

T. Kimoto, G. Alfieri, 2012 .

Technological Aspects of Ion Implantation in SiC Device Processes

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .

Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence

W. J. Choyke, Walter M. Klahold, T. Ohshima, 2014 .

Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport Equation

T. Kimoto, Hajime Tanaka, J. Suda, 2017, IEEE Transactions on Nanotechnology.

Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

Tsunenobu Kimoto, Jun Suda, Shuhei Ichikawa, 2012 .

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film

H. Matsunami, T. Kimoto, S. Matsuo, 2005 .

Crystallographic Defects under Surface Morphological Defects of 4H-SiC Homoepitaxial Films

H. Matsunami, T. Kimoto, F. Inoko, 2004 .

Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center

T. Kimoto, A. Yamashita, Hiroyuki Matsunami Hiroyuki Matsunami, 1993 .

Improved Surface Morphology and Background Doping Concentration in 4H-SiC(000-1) Epitaxial Growth by Hot-Wall CVD

H. Matsunami, T. Kimoto, K. Wada, 2005 .

Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

E. Janzén, N. T. Son, T. Kimoto, 2014 .

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

T. Kimoto, J. Suda, T. Okuda, 2018 .

Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires

M. Sato, T. Kimoto, M. Sato, 2021 .

Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing

T. Kimoto, J. Suda, Takuma Kobayashi, 2016, 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

P. Friedrichs, T. Kimoto, D. Peters, 2011 .

Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

T. Kimoto, H. Yoshioka, J. Suda, 2009, IEEE Transactions on Electron Devices.

4H-SiC MIS Capacitors and MISFETs With Deposited $\hbox{SiN}_{x}/ \hbox{SiO}_{2}$ Stack-Gate Structures

T. Kimoto, J. Suda, M. Noborio, 2008, IEEE Transactions on Electron Devices.

4H-SiC MIS Capacitors and MISFETs With Deposited SiNx/SiO2 Stack-Gate Structures

T. Kimoto, J. Suda, M. Noborio, 2018 .

Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

P. Friedrichs, T. Kimoto, D. Peters, 2010 .

Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in $\hbox{N}_{2}\hbox{O}$ or NO

Hiroki Miyake, T. Kimoto, J. Suda, 2011, IEEE Electron Device Letters.

P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing

T. Kimoto, J. Suda, M. Noborio, 2020 .

Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs

T. Kimoto, Y. Kanzaki, M. Noborio, 2005, IEEE Transactions on Electron Devices.

N2O-grown oxides/4H-SiC (0001), (0338), and (1120) interface properties characterized by using p-type gate-controlled diodes

T. Kimoto, J. Suda, M. Noborio, 2008 .

Short-Channel Effects in 4H-SiC MOSFETs

H. Matsunami, T. Kimoto, J. Suda, 2005 .

Improved Performance of 4H-SiC Double Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors by Increasing RESURF Doses

T. Kimoto, J. Suda, M. Noborio, 2008 .

4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ($ \hbox{000}\bar{\hbox{1}}$)

H. Miyake, T. Kimoto, T. Kimoto, 2011, IEEE Electron Device Letters.

Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission

W. J. Choyke, T. Kimoto, P. Neudeck, 2002 .

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

T. Kimoto, K. Danno, T. Hori, 2007 .

Characterization of Bar-Shaped Stacking Faults in 4H-SiC Epitaxial Layers by High-Resolution Transmission Electron Microscopy

T. Kimoto, G. Feng, H. Kawanowa, 2013 .

Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors

T. Kimoto, J. Suda, M. Noborio, 2010 .

4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose

T. Kimoto, J. Suda, M. Noborio, 2008, International Symposium on Power Semiconductor Devices and IC's.

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

T. Kimoto, J. Suda, Y. Negoro, 2006 .

Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs

T. Kimoto, T. Kimoto, J. Suda, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition

Tsunenobu Kimoto, Hiroyuki Matsunami, Satoshi Tamura, 2001 .

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

T. Kimoto, J. Suda, T. Kachi, 2018, Applied Physics Letters.

Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

T. Kimoto, Takuma Kobayashi, M. Yoshikawa, 2015 .

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

T. Kimoto, Shingo Ogawa, Y. Nanen, 2012 .

High Channel Mobilities of MOSFETs on Highly-Doped 4H-SiC (11-20) Face by Oxidation in N2O Ambient

H. Matsunami, T. Kimoto, J. Suda, 2004 .

Ultrahigh-voltage SiC devices for future power infrastructure

Tsunenobu Kimoto, T. Kimoto, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Impact of Carrier Lifetimes on Non-Destructive Mapping of Dislocations in 4H-SiC Epilayers

T. Kimoto, J. Suda, G. Feng, 2011 .

In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate

T. Kimoto, J. Suda, G. Feng, 2010 .

Growth and Electrical Characterization of 4H-SiC Epilayers

H. Matsunami, T. Kimoto, K. Danno, 2007 .

Impacts of growth parameters on deep levels in n-type 4H-SiC

T. Kimoto, K. Danno, Tsutomu Hori, 2007 .

Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers

T. Kimoto, J. Suda, G. Feng, 2010 .

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

W. J. Choyke, T. Ohshima, T. Kimoto, 2012 .

Special Issue on Silicon Carbide Devices and Technology

Jian H. Zhao, J. Cooper, H. Matsunami, 2008 .

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC

T. Ohshima, T. Kimoto, A. Koizumi, 2011 .

Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation

H. Tsuchida, T. Kimoto, J. Suda, 2017, Journal of Electronic Materials.

Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC

T. Kimoto, J. Suda, T. Okuda, 2015 .

Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing

H. Tsuchida, T. Kimoto, J. Suda, 2014 .

Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation

T. Kimoto, J. Suda, T. Okuda, 2013 .

Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers

T. Kimoto, K. Danno, 2007 .

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

T. Kimoto, G. Alfieri, 2013 .

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

H. B. Weber, T. Kimoto, G. Pensl, 2012 .

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

T. Kimoto, G. Pensl, G. Alfieri, 2010 .

Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation

T. Kimoto, M. Kaneko, T. Matsuoka, 2023, Japanese Journal of Applied Physics.

Lateral spreads of ion-implanted Al and P atoms in silicon carbide

T. Kimoto, M. Kaneko, M. Nakajima, 2021, Japanese Journal of Applied Physics.

Ion implantation technology in SiC for high-voltage/high-temperature devices

T. Kimoto, T. Kimoto, K. Kawahara, 2016, 2016 16th International Workshop on Junction Technology (IWJT).

Detection of minority carrier traps in p-type 4H-SiC

T. Kimoto, G. Alfieri, 2014 .

Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes

T. Kimoto, J. Suda, Tsutomu Hori, 2008 .

Title Enhanced Drain Current of 4 H-SiC MOSFETs by Adopting aThree-Dimensional Gate Structure

T. Kimoto, H. Yoshioka, J. Suda, 2018 .

Title Simulation and experimental study on the junction terminationstructure for high-voltage 4 H-SiC PiN diodes

T. Kimoto, J. Suda, Toru Hiyoshi, 2016 .

Franz–Keldysh effect in 4H-SiC p–n junction diodes under high electric field along the 〈11 2 ¯ 0〉 direction

T. Kimoto, J. Suda, M. Horita, 2019, Japanese Journal of Applied Physics.

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

T. Kimoto, J. Suda, T. Kachi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

4H-SiC bipolar junction transistors with record current gains of 257 on (0001) and 335 on (000–1)

Tsunenobu Kimoto, Jun Suda, Hiroki Miyake, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

A study of SiC Power BJT performance and robustness

Takashi Hikihara, Tsuyoshi Funaki, Tsunenobu Kimoto, 2011, Microelectron. Reliab..

Analysis of carrier lifetimes in n-type 4H-SiC by rate equations

T. Kimoto, S. Yamashita, 2019, Applied Physics Express.

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2002 .

Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process

Tsunenobu Kimoto, Yusuke Nishi, T. Kimoto, 2015 .

Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes

T. Kimoto, S. Yaguchi, Hiroyuki Matsunami Hiroyuki Matsunami, 1995 .

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

T. Kimoto, Hajime Tanaka, J. Suda, 2014 .

Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

T. Kimoto, J. Suda, S. Asada, 2018 .

Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface

T. Kimoto, H. Takashima, M. Kaneko, 2023, APL Materials.

Electrically Active Defects in Electron Irradiated P-Type 6H-SiC

T. Kimoto, G. Alfieri, 2011 .

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Takashi Nakajima, Tsunenobu Kimoto, Naohisa Inoue, 1997 .

High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers

T. Kimoto, K. Danno, 2006 .

Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation

T. Kimoto, J. Suda, Hajime Tanaka, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires

T. Kimoto, Hajime Tanaka, J. Suda, 2016 .

SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation

T. Kimoto, U. Grossner, M. Kaneko, 2019, Materials Science Forum.

21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

Tsunenobu Kimoto, Jun Suda, Hiroki Niwa, 2012 .

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer

T. Kimoto, G. Pensl, T. Frank, 2009 .

Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors

T. Kimoto, J. Suda, Y. Nakano, 2006 .

Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor

T. Kimoto, J. Suda, Y. Nakano, 2005 .

High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

T. Kimoto, J. Suda, M. Horita, 2023, Applied Physics Express.

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami, 2005, IEEE Transactions on Electron Devices.

Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure

T. Kimoto, J. Suda, M. Noborio, 2007 .

Design and Fabrication of SiC RESURF MOSFETs

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy

H. Matsunami, T. Kimoto, N. Onojima, 2004 .

Impact ionization coefficients of 4H-SiC in a wide temperature range

T. Kimoto, H. Niwa, Y. Zhao, 2018, Japanese Journal of Applied Physics.

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

H. Matsunami, T. Kimoto, H. Fujiwara, 2005 .

W. J. Choyke, H. Matsunami, T. Kimoto, 1997 .

Impact of the Oxygen Amount of an Oxide Layer and Post Annealing on Forming Voltage and Initial Resistance of NiO-based Resistive Switching Cells

T. Kimoto, T. Iwata, Y. Nishi, 2013 .

Origin of Etch Hillocks Formed on On-Axis SiC(0001) Surfaces by Molten KOH Etching

T. Kimoto, J. Suda, Haruki Shoji, 2011 .

H. Matsunami, T. Kimoto, G. Pensl, 2001 .

Oxygen in silicon carbide : shallow donors and deep acceptors

W. J. Choyke, H. Matsunami, T. Kimoto, 1999 .

27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Tsunenobu Kimoto, Koji Nakayama, Yuji Kiuchi, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides

Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel, 2010 .

Chlorine in SiC: Experiment and Theory

T. Kimoto, G. Alfieri, 2012 .

Shallow Defects Observed in As-Grown and Electron-Irradiated or He+-Implanted Al-Doped 4H-SiC Epilayers

W. J. Choyke, T. Ohshima, T. Kimoto, 2010 .

Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy

T. Kimoto, K. Danno, 2006 .

Laplace Transform Deep Level Transient Spectroscopy Study of the EH6/7 Center

T. Kimoto, G. Alfieri, 2013 .

Breakdown characteristics of 12–20 kV-class 4H-SiC PiN diodes with improved junction termination structures

Gan Feng, T. Kimoto, T. Kimoto, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes

Gan Feng, Tsunenobu Kimoto, Jun Suda, 2012 .

Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

T. Kimoto, Hajime Tanaka, M. Hara, 2023, Applied Physics Express.

Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC

T. Kimoto, M. Hara, M. Kaneko, 2023, Applied Physics Express.

Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces

T. Kimoto, M. Hara, S. Asada, 2020, Applied Physics Express.

Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process

T. Kimoto, Koji Ito, K. Tachiki, 2022, Applied Physics Express.

Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature

T. Kimoto, M. Hara, M. Kaneko, 2021, Applied Physics Express.

Applications of Silicon Carbide Devices in Power Systems

Tsunenobu Kimoto, James A. Cooper, J. Cooper, 2014 .

Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure

H. Matsunami, T. Kimoto, J. Suda, 2002 .

Silicon Carbide: Volume 2: Power Devices and Sensors

L. Ley, P. Friedrichs, T. Kimoto, 2009 .

Improved Current Gain in 4H-SiC BJTs Passivated with Deposited Oxides Followed by Nitridation

T. Kimoto, J. Suda, H. Miyake, 2011 .

Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask

H. Matsunami, T. Kimoto, R. K. Malhan, 2005 .

MOS interface properties and MOSFET performance on 4H-SiC{0001} and (11-20) processed by N/sub 2/O oxidation

T. Kimoto, H. Matsunami, T. Kimoto, 2004, International Meeting for Future of Electron Devices, 2004..

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

H. Matsunami, T. Kimoto, J. Suda, 2005, IEEE Transactions on Electron Devices.

On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps

T. Kimoto, J. Suda, B. Zippelius, 2012 .

Source of Surface Morphological Defects Formed on 4H–SiC Homoepitaxial Films

T. Kimoto, S. Matsuo, M. Yamaguchi, 2006 .

Role of initial nucleation in molecular-beam epitaxy of GaN on lattice-matched ZrB2 substrates

T. Kimoto, J. Suda, R. Armitage, 2005 .

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction

T. Kimoto, J. Suda, H. Miyake, 2009 .

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

T. Kimoto, J. Suda, K. Yamaji, 2008 .

Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films

T. Kimoto, T. Okada, Kengo Ochi, 2006 .

Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers

H. Matsunami, T. Kimoto, J. Suda, 2003, IEEE Electron Device Letters.

Homoepitaxial mesa structures on 4H–SiC (0 0 0 1) and (1 1 2̄ 0) substrates by chemical vapor deposition

H. Matsunami, T. Kimoto, Y. Chen, 2003 .

Surface Step Structures of SiC Epitaxial Layers Grown on Off-axis SiC (0001)

H. Matsunami, T. Kimoto, 2001 .

Deep Interface States in SiO 2/p-type α-SiC Structure

H. Matsunami, T. Kimoto, N. Inoue, 1997 .

Engineering the band gap of SiC nanotubes with a transverse electric field

T. Kimoto, G. Alfieri, 2010 .

Diffusion Study of Chlorine in SiC by First Principles Calculations

T. Kimoto, G. Alfieri, 2013 .

Impacts of surface roughness scattering on hole mobility in germanium nanowires

T. Kimoto, Hajime Tanaka, J. Suda, 2015, 2015 Silicon Nanoelectronics Workshop (SNW).

Interface States of SiO2/SiC on (11-20) and (0001) Si Faces

H. Matsunami, T. Kimoto, H. Yano, 2001 .

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

T. Kimoto, K. Nakashima, D. Nakamura, 2017 .

Diffusion and Gettering of Transition Metals in 4H-SiC

T. Kimoto, T. Bessho, K. Danno, 2012 .

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

H. Matsunami, T. Kimoto, K. Danno, 2005 .

Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

T. Kimoto, K. Danno, 2006 .

Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition

H. Matsunami, T. Kimoto, S. Nakamura, 2003 .

Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

H. Matsunami, T. Kimoto, S. Nakamura, 2002 .

Unipolar Power Switching Devices

Tsunenobu Kimoto, James A. Cooper, J. Cooper, 2014 .

Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

T. Kimoto, M. Kaneko, M. Nakajima, 2020, IEEE Transactions on Electron Devices.

Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC

H. Matsunami, T. Kimoto, N. Miyamoto, 2001 .

Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs

T. Kimoto, J. Suda, N. Morioka, 2014, 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).

Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

T. Kimoto, Hajime Tanaka, J. Suda, 2014, 2014 Silicon Nanoelectronics Workshop (SNW).

Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices

Gan Feng, Tsunenobu Kimoto, Takafumi Okuda, 2013 .

Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors

A. Yoshigoe, T. Kimoto, Heiji Watanabe, 2022, Applied Physics Express.

Formation of Deep pn Junctions by High-Energy Al and B Ion Implantations into SiC

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .