G. Simin

Jerry L. Hudgins, Grigory Simin, J. Hudgins, 2002, 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289).

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Michael S. Shur, A. Tarakji, Grigory Simin, 2000 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

G. Simin, M. Khan, I. Adesida, 2003 .

GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates

C. Chen, Hong Wang, D. Hill, 2002 .

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Michael S. Shur, Grigory Simin, M. Asif Khan, 2002 .

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1 1 00] oriented GaN substrates

C. Chen, D. Hill, G. Simin, 2002 .

Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells

M. Shur, G. Simin, M. Khan, 2001 .

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

M. Shur, G. Simin, M. Khan, 2001 .

High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Electron Device Letters.

Millimeter wave emission from GaN high electron mobility transistor

Michael S. Shur, Xiang Zhang, Jingzhou Xu, 2004 .

Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders

G. Simin, M. Chandrashekhar, Asif Khan, 2021, Applied Physics Letters.

Insulated Gate Nitride-Based Field Effect Transistors

M. Shur, G. Simin, R. Gaska, 2010 .

INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

M. Shur, G. Simin, M. Khan, 2004 .

SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

M. Shur, G. Simin, R. Gaska, 2002, IEEE Electron Device Letters.

Electronic Devices based on Group III Nitrides

M. Shur, G. Simin, M. Khan, 2001 .

Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors

M. Shur, G. Simin, M. Khan, 2001 .

2003 Index IEEE Electron Device Letters Vol. 24

G. Simin, Junliang Yang, R. Gaska, 2003 .

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

M. Shur, G. Simin, M. Khan, 2000 .

Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Exciton and carrier motion in quaternary AlInGaN

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2003 .

Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission

G. Simin, M. Khan, Changqin Chen, 2002 .

Localization and Hopping of Excitons in Quaternary AlInGaN

M. Shur, G. Simin, M. Khan, 2003 .

High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

M. Shur, G. Simin, M. Khan, 2000 .

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

Abdullah Al Mamun, G. Simin, M. Chandrashekhar, 2021 .

Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts

G. Simin, Xuhong Hu, Asif Khan, 2018, IEEE Electron Device Letters.

High-power operation of III-N MOSHFET RF switches

G. Simin, V. Adivarahan, J. Yang, 2005, IEEE Microwave and Wireless Components Letters.

Novel AlInN/GaN integrated circuits operating up to 500 °C

Michael S. Shur, Jie Deng, Rakesh K. Jain, 2015 .

Photonics integrated circuits using AlxGa1−xN based UVC light-emitting diodes, photodetectors and waveguides

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors

G. Simin, V. Adivarahan, A. Chitnis, 2002 .

An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices

G. Simin, M. Chandrashekhar, Asif Khan, 2020, physica status solidi (a).

AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design

M. Shur, G. Simin, R. Gaska, 2010, IEEE Electron Device Letters.

Insulated-Gate Integrated III-Nitride RF Switches

M. Shur, G. Simin, J. Deng, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Frequency-configurable electronics

G. Simin, R. Gaska, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Low-loss high-power AlInGaN RF switches

M. Shur, G. Simin, R. Gaska, 2007, 2007 International Semiconductor Device Research Symposium.

High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates

G. Simin, M. Chandrashekhar, Asif Khan, 2017, IEEE Electron Device Letters.

AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability

G. Simin, M. Khan, V. Adivarahan, 2004 .

Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors

M. Levinshtein, G. Simin, M. Khan, 2003 .

Maximum current in nitride-based heterostructure field-effect transistors

M. Shur, G. Simin, M. Khan, 2002 .

Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors

G. Simin, M. Khan, V. Adivarahan, 2006 .

Stable 20 W/mm AlGaN-GaN MOSHFET

G. Simin, M. Khan, V. Adivarahan, 2005 .

Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2003 .

HIGH-POWER SWITCHING USING III-NITRIDE METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURES

M. Shur, G. Simin, M. Khan, 2006 .

Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

M. Shur, G. Simin, M. Khan, 2002 .

Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

M. Shur, N. Pala, M. Levinshtein, 2001 .

$\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES

M. Shur, G. Simin, R. Gaska, 2009 .

Low Dynamic On-Resistance Kilovolt-Range AlGaN/GaN HFETs

G. Simin, M. Khan, V. Adivarahan, 2006, 2006 64th Device Research Conference.

AlGaN/GaN HEMTs for energy efficient systems

M. Shur, G. Simin, R. Gaska, 2013, 2013 IEEE Energytech.

Planar Schottky Diodes on High Quality $A$-plane GaN

G. Simin, V. Adivarahan, M. Shatalov, 2003 .

Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm

G. Simin, V. Adivarahan, A. Chitnis, 2002 .

Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors

M. Shur, N. Pala, G. Simin, 2001 .

Non‐catalyst growth and characterization of a ‐plane AlGaN nanorods

G. Simin, V. Adivarahan, M. Shatalov, 2006 .

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

M. Shur, G. Simin, M. Khan, 2001 .

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

C. Chen, M. Shur, N. Pala, 2003 .

Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures

C. Chen, G. Simin, M. Khan, 2001 .

Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells

G. Simin, V. Adivarahan, A. Chitnis, 2001 .

Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence

G. Simin, V. Wheeler, C. Eddy, 2019 .

DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress

M. Shur, G. Simin, M. Khan, 2002 .

Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region

M. Shur, N. Pala, M. Levinshtein, 2003 .

An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays

G. Simin, M. Chandrashekhar, Asif Khan, 2020, Applied Physics Express.

Getting to Know Semiconductors

M. Shur, M. Levinshtein, G. Simin, 1992 .

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

G. Simin, W. Knap, S. Rumyantsev, 2018 .

AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

G. Simin, I. Adesida, V. Kumar, 2002, IEEE Electron Device Letters.

Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate

Michael S. Shur, Grigory Simin, M. Asif Khan, 2000 .

Lattice and energy band engineering in AlInGaN/GaN heterostructures

Michael S. Shur, David J. Smith, Grigory Simin, 2000 .

Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs

G. Simin, M. Chandrashekhar, Asif Khan, 2020 .

Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

A. Tarakji, G. Simin, A. Koudymov, 2003, IEEE Electron Device Letters.

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

M. Shur, N. Pala, M. Levinshtein, 2001 .

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Michael S. Shur, A. Tarakji, Alexey Koudymov, 2001 .

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

A. Tarakji, G. Simin, J. Yang, 2001, IEEE Electron Device Letters.

High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design

Grigory Simin, M. Asif Khan, Max Shatalov, 2004 .

Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates

Grigory Simin, Vinod Adivarahan, Jian Ping Zhang, 2002 .

Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Michael S. Shur, Grigory Simin, Remis Gaska, 2001 .

Pulsed atomic layer epitaxy of quaternary AlInGaN layers

M. Shur, Hong Wang, G. Simin, 2001 .

Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

G. Simin, V. Adivarahan, A. Chitnis, 2002 .

-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

M. Shur, G. Simin, R. Gaska, 2003 .

Simple method to determine the main Gunn domain parameters

M. Levinshtein, G. Simin, 1980 .

PIEZOELECTRIC DOPING IN ALINGAN/GAN HETEROSTRUCTURES

M. Shur, G. Simin, M. Khan, 1999 .

High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

A. Lunev, Grigory Simin, Michael Shur, 2000 .

Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure

M. Shur, G. Simin, M. Khan, 1999 .

Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates

A. Lunev, Grigory Simin, Remis Gaska, 2000 .

Electron mobility and velocity in Al0.45Ga0.55N-channel ultra-wide bandgap HEMTs at high temperatures for RF power applications

G. Simin, P. Fay, Asif Khan, 2022, Applied Physics Letters.

Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes

G. Simin, M. Chandrashekhar, Asif Khan, 2021, Applied Physics Express.

THE BIRTH, LIFE AND DEATH OF THE ELECTRON AND HOLE

M. Levinshtein, G. Simin, 1992 .

Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

Grigory Simin, M. Asif Khan, Vinod Adivarahan, 2002 .

Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells

Grigory Simin, Bruce H. T. Chai, C. Q. Chen, 2002 .

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

C. Chen, D. Hill, G. Simin, 2002 .

Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

G. Simin, Xuhong Hu, V. Wheeler, 2019, Semiconductor Science and Technology.

Cryogenic RF switch using III-nitride MOSHFETs

M. Shur, G. Simin, J. Yang, 2009 .

Maximum Powers of Low-Loss Series-Shunt FET RF Switches

M. Shur, X. Hu, G. Simin, 2009 .

Ultra low-loss high power AlGaN/GaN HFET switches

M. Shur, G. Simin, R. Gaska, 2008, 2008 IEEE Power Electronics Specialists Conference.

Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications

G. Simin, V. Adivarahan, N. Tipirneni, 2007, IEEE Electron Device Letters.

Current Crowding in High Performance Low-Loss HFET RF Switches

M. Shur, G. Simin, R. Gaska, 2008, IEEE Electron Device Letters.

High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor

V. S. Chava, G. Simin, A. Greytak, 2017 .

Optical bandgap formation in AlInGaN alloys

Michael S. Shur, Albertas Žukauskas, Grigory Simin, 2000 .

Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures

M. Shur, G. Simin, M. Khan, 2004 .

High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

G. Simin, V. Wheeler, C. Eddy, 2020, physica status solidi (a).

Current collapse in high-Al channel AlGaN HFETs

G. Simin, Xuhong Hu, Asif Khan, 2019, Applied Physics Express.

Near-band-edge photoluminescence of wurtzite-type AlN

M. Shur, G. Simin, M. Khan, 2002 .

High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates

Abdullah Al Mamun, G. Simin, M. Goorsky, 2023, Applied Physics Express.

Bulk Current Model for GaN-on-Si High Electron Mobility Transistors

G. Simin, M. Islam, Mirwazul Islam, 2016 .

SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors

Michael S. Shur, A. Lunev, Grigory Simin, 2000 .

Spatially resolved Fourier transform impedance spectroscopy: A technique to rapidly characterize interfaces, applied to a QD/SiC heterojunction

G. Simin, A. Greytak, Asif Khan, 2021 .

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

M. Shur, N. Pala, M. Levinshtein, 2004 .

On the low frequency noise mechanisms in GaN/AlGaN HFETs

M. Levinshtein, G. Simin, M. Khan, 2003 .

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

G. Simin, M.E. Muir, I. Adesida, 2003, IEEE Microwave and Wireless Components Letters.

High-performance AlGaN/GaN high electron mobility transistors on SiC

G. Simin, M. Khan, I. Adesida, 2002 .

GaN/AlGaN p-channel inverted heterostructure JFET

G. Simin, A. Koudymov, M. Asif Khan, 2002, IEEE Electron Device Letters.

Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors

M. Shur, N. Pala, X. Hu, 2002 .

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

G. Simin, M. Khan, I. Adesida, 2002 .

Strain energy band engineering approach to AlN/GaN/InN heterojunction devices

M. Shur, J. Yang, G. Simin, 2001, 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).

LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS

M. Shur, N. Pala, M. Levinshtein, 2001, The Random and Fluctuating World.

Drift mobility of electrons in AlGaN/GaN MOSHFET

M. Shur, M. Levinshtein, G. Simin, 2001 .

RF-Enhanced Contacts to Wide-Bandgap Devices

G. Simin, Z. Yang, 2007, IEEE Electron Device Letters.

Low Frequency Noise in n-GaN with High Electron Mobility

M. Shur, D. Look, M. Levinshtein, 1999 .

An Efficient High-Frequency Drive Circuit for GaN Power HFETs

A. Monti, E. Santi, Bo Wang, 2009, IEEE Transactions on Industry Applications.

Photovoltaic and photoconductive action due to PbS quantum dots on graphene/SiC Schottky diodes from NIR to UV

G. Simin, A. Greytak, F. Ahmed, 2019, ACS Applied Electronic Materials.

Low Frequency Noise in Gallium Nitride Field Effect Transistors

M. Shur, M. Levinshtein, G. Simin, 2002 .

Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers

Grigory Simin, Phil Won Yu, M. Asif Khan, 2003 .

RF Transmission Line Method for Wide-Bandgap Heterostructures

M. Shur, N. Pala, V. Tokranov, 2009, IEEE Electron Device Letters.

Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm

G. Simin, A. Koudymov, M.A. Khan, 2005, IEEE Electron Device Letters.

Current collapse and reliability of III‐N heterostructure field effect transistors

Michael S. Shur, Alexey Koudymov, Grigory Simin, 2007 .

Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials

C. Chen, G. Simin, M. Khan, 2002 .

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

Grigory Simin, Max Shatalov, Vinod Adivarahan, 2002 .

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

M. Shur, N. Pala, G. Simin, 2003 .

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

Grigory Simin, M. Asif Khan, Max Shatalov, 2002 .

Accumulation Hole Layer in p-GaN/AlGaN Heterostructures

Michael S. Shur, Grigory Simin, Remis Gaska, 2000 .

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

M. Shur, G. Simin, R. Gaska, 2003 .

New Developments in Gallium Nitride and the Impact on Power Electronics

A. Monti, E. Santi, G. Simin, 2005, 2005 IEEE 36th Power Electronics Specialists Conference.

Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs

R. Gaska, G. Simin, N. Pala, 2007, 2007 65th Annual Device Research Conference.

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

R. Mickevicius, Grigory Simin, Michael Shur, 2004 .

III-Nitride Materials and Devices for Power Electronics

M. Shur, G. Simin, R. Gaska, 2013 .

Novel AlInN/GaN integrated circuits operating up to 500 °C

Michael S. Shur, G. Simin, Remis Gaska, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

Edge trapping mechanism of current collapse in III-N FETs

M. Shur, G. Simin, R. Gaska, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

LOW-FREQUENCY NOISE IN 4H-SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

J. Palmour, M. Levinshtein, G. Simin, 1996 .

Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

Michael S. Shur, Grigory Simin, Sergey L. Rumyantsev, 2003 .

Generation-recombination noise in GaN and GaN-based devices

Michael S. Shur, Remis Gaska, Michael E. Levinshtein, 2003, SPIE International Symposium on Fluctuations and Noise.

Low frequency noise in GaN-based transistors

M. Shur, N. Pala, M. Levinshtein, 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).

Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

M. Shur, G. Simin, M. Khan, 2001 .

High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts

M. Shur, G. Simin, G. Yang, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

FPGA based sliding mode control for high frequency power converters

A. Monti, E. Santi, S. Lentijo, 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures

Michael S. Shur, Wojciech Knap, Michael E. Levinshtein, 2002 .

7.5 kW/mm 2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates

M. Shur, G. Simin, M. Khan, 2000 .