H. Mitlehner

发表

Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories

P. Friedrichs, D. Stephani, H. Mitlehner, 2000 .

Dynamic characteristics of high voltage 4H-SiC vertical JFETs

P. Friedrichs, D. Stephani, H. Mitlehner, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices

H. Mitlehner, R. Rupp, G. Deboy, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

Key power semiconductor device concepts for the next decade

L. Lorenz, H. Mitlehner, H. Mitlehner, 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

SiC power devices with low on-resistance for fast switching applications

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC

H. Mitlehner, H. Ryssel, L. Frey, 2013 .

An 1800 V triple implanted vertical 6H-SiC MOSFET

Peter Friedrichs, D. Stephani, H. Mitlehner, 1999 .

H. Mitlehner, P. Paduschek, Ch. Höpfl, 1983 .

Hydrogen content and mechanical stress in glow discharge amorphous silicon

H. Mitlehner, G. Kristen, P. Eichinger, 1982 .

Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation

H. Mitlehner, L. Frey, A. Bauer, 2013 .

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

H. Mitlehner, L. Frey, A. Bauer, 2019, Materials Science Forum.

Experimental analysis of bipolar SiC-devices for future energy distribution systems

H. Mitlehner, L. Frey, A. Bauer, 2014, 2014 16th European Conference on Power Electronics and Applications.

RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC

H. Mitlehner, T. Erlbacher, C. Matthus, 2020, IEEE Transactions on Electron Devices.

Characterization of fast 4.5 kV SiC p-n diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

H. Mitlehner, L. Frey, A. Bauer, 2015 .

Infrared active phonons in CdCr2Se4

H. Mitlehner, R. Geick, V. Wagner, 1971 .

Far infrared and Raman investigation of Zn2+ doped MnF2 in the two-magnon region

G. Dietrich, H. Mitlehner, R. Geick, 1971 .

SiC devices: physics and numerical simulation

H. Mitlehner, R. Helbig, M. Ruff, 1994 .

Annealing behavior of neutron-transmutation doped silicon—As studied by EPR

H. Mitlehner, U. Kaufmann, 1979 .

Periphery protection for silicon carbide devices: state of the art and simulation

Dominique Planson, Jean-Pierre Chante, S. Ortolland, 1997 .

To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes

D. Stephani, H. Mitlehner, W. Bartsch, 2003 .

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

H. Mitlehner, W. Bartsch, S. Gediga, 2007 .

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

Peter Friedrichs, Heinz Mitlehner, Dietrich Stephani, 2000 .

Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices

H. Mitlehner, L. Frey, A. Bauer, 2018, Materials Science Forum.

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits

H. Mitlehner, L. Frey, T. Erlbacher, 2019, Materials Science Forum.

Switching behaviour of fast high voltage SiC pn-diodes

P. Friedrichs, D. Stephani, H. Mitlehner, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).