Sangheon Lee

发表

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014, IEEE Electron Device Letters.

Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

H. Hwang, Jeonghwan Song, J. Woo, 2016, IEEE Electron Device Letters.

Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode

H. Hwang, Y. Nishi, K. Shiraishi, 2013, 2013 IEEE International Electron Devices Meeting.

Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse

H. Hwang, Jeonghwan Song, Daeseok Lee, 2013, 2013 IEEE International Electron Devices Meeting.

Electrical and reliability characteristics of a scaled (∼30nm) tunnel barrier selector (W/Ta2O5/TaOx/TiO2/TiN) with excellent performance (JMAX > 107A/cm2)

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014, Symposium on VLSI Technology.

Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory

H. Hwang, Jeonghwan Song, Daeseok Lee, 2015, Advanced materials.

Hardware implementation of associative memory characteristics with analogue-type resistive-switching device

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014, Nanotechnology.

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

H. Hwang, Daeseok Lee, J. Woo, 2014, IEEE Electron Device Letters.

Improved endurance of RRAM by optimizing reset bias scheme in 1T1R configuration to suppress reset breakdown

H. Hwang, Jeonghwan Song, Sangheon Lee, 2016, IEEE Silicon Nanoelectronics Workshop.

Selector devices for 3-D cross-point ReRAM

Hyunsang Hwang, Sangheon Lee, Jiyong Woo, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory

H. Hwang, Daeseok Lee, J. Woo, 2014, Nanoscale Research Letters.

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Fekadu Gochole Aga, Jeonghwan Song, J. Woo, 2016 .

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory

H. Hwang, Jeonghwan Song, Daeseok Lee, 2015 .

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014 .

Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications

H. Hwang, Daeseok Lee, J. Woo, 2013 .

Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM

H. Hwang, Daeseok Lee, J. Woo, 2015 .

Non-Linear I-V Characteristics of TiOy Film by Optimizing Thickness and Trap Density for Selector-Less ReRAM

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014 .

Effect of AC pulse overshoot on nonlinearity and reliability of selectorless resistive random access memory in AC pulse operation

H. Hwang, Jeonghwan Song, Daeseok Lee, 2015 .

8-inch wafer-scale HfOx-based RRAM for 1S-1R cross-point memory applications

H. Hwang, K. Kwon, Jeonghwan Song, 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Effect of nitrogen-doped GST buffer layer on switching characteristics of conductive-bridging RAM

H. Hwang, Jeonghwan Song, Daeseok Lee, 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Optimized Lightning-Rod Effect to Overcome Trade-Off Between Switching Uniformity and On/Off Ratio in ReRAM

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2014, IEEE Electron Device Letters.

Highly Reliable Resistive Switching Without an Initial Forming Operation by Defect Engineering

Hyunsang Hwang, Kibong Moon, Jiyong Woo, 2013, IEEE Electron Device Letters.

Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures

H. Hwang, Daeseok Lee, J. Woo, 2014 .

Effects of Ti Buffer Layer on Retention and Electrical Characteristics of Cu-Based Conductive-Bridge Random Access Memory (CBRAM)

Hyunsang Hwang, Behnoush Attarimashalkoubeh, Jiyong Woo, 2014 .

Defect Engineering Using Bilayer Structure in Filament-Type RRAM

H. Hwang, Daeseok Lee, J. Woo, 2013, IEEE Electron Device Letters.

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

Hyunsang Hwang, Jiyong Woo, Euijun Cha, 2015 .

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application

H. Hwang, Daeseok Lee, E. Cha, 2015 .

Effect of Nitrogen Doping on Variability of TaOx -RRAM for Low-Power 3-Bit MLC Applications

Hyunsang Hwang, Jaehyuk Park, Jiyong Woo, 2015 .

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Hyunsang Hwang, Jiyong Woo, Euijun Cha, 2014 .