H. Miyoshi

发表

An analytical method of evaluating variation of the threshold voltage shift caused by the negative-bias temperature stress in poly-Si TFTs

S. Maeda, S. Maegawa, T. Ipposhi, 1998 .

A quantitative analysis of time-decay reproducible stress-induced leakage current in SiO/sub 2/ films

K. Eikyu, N. Ajika, K. Ishikawa, 1997 .

Microscopic and statistical approach to SILC characteristics-exponential relation between distributed Fowler Nordheim coefficients and its physical interpretation

N. Ajika, Hirokazu Miyoshi, H. Miyoshi, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

An amorphous-silicon thin-film transistor model including variable resistance effect

K. Ishikawa, H. Miyoshi, N. Kotani, 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).

Soft error susceptibility and immune structures in dynamic random access memories (DRAMs) investigated by nuclear microprobes

T. Kishimoto, S. Satoh, Yoshikazu Ohno, 1996 .

oft Error Susceptibility and Immune Struc in Dynamic andom Access 's) Investigated by Nucle

K. Sonoda, H. Miyoshi, H. Sayama, 1996 .

Cornerless active area cell and Bi-T-MOS process for sub-half micron SRAMs

T. Ipposhi, H. Kuriyama, H. Miyoshi, 1994, Proceedings of 1994 VLSI Technology Symposium.

A novel cell structure suitable for a 3 volt operation, sector erase flash memory

N. Ajika, S. Kobayashi, M. Ohi, 1992, 1992 International Technical Digest on Electron Devices Meeting.

A method for the prediction of hot-carrier lifetime in floating SOI NMOSFETs

S. Maeda, Y. Inoue, H. Miyoshi, 1997 .

Origin of positive charge generated in thin SiO/sub 2/ films during high-field electrical stress

H. Miyoshi, A. Teramoto, K. Kobayashi, 1999 .

A C-switch cell for low-voltage and high-density SRAMs

S. Maeda, S. Maegawa, H. Kuriyama, 1998 .

Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)

Hideto Hidaka, Katsuhiro Suma, Kazuyasu Fujishima, 1996 .

Selective Oxidation of Silicon in High Pressure Steam

H. Miyoshi, N. Tsubouchi, Akira Nishimoto, 1978 .

Oxidation of Silicon in High-Pressure Steam

H. Miyoshi, N. Tsubouchi, H. Abe, 1977 .

An asymmetric memory cell using a C-TFT for single-bit-line SRAM's

Shigenobu Maeda, Y. Kohno, K. Anami, 1999 .

High-pressure oxidation for thin gate insulator process

H. Miyoshi, N. Tsubouchi, M. Hirayama, 1982, IEEE Transactions on Electron Devices.

High Pressure Oxidation for Thin Gate Insulator Process

H. Miyoshi, N. Tsubouchi, M. Hirayama, 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers.

The applications of the high-pressure oxidation process to the fabrication of MOS LSI

T. Enomoto, N. Tsubouchi, H. Miyoshi, 1979, IEEE Transactions on Electron Devices.

Stable Solution Method for Viscoelastic Oxidation Including Stress-Dependent Viscosity

Satoru Kawazu, Norihiko Kotani, Hirokazu Miyoshi, 1996 .

A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films

M. Hatanaka, Natsuo Ajika, Kiyohiko Sakakibara, 1996, Proceedings of International Reliability Physics Symposium.

ULSI DRAM/SIMOX with stacked capacitor cells for low-voltage operation

Hideto Hidaka, T. Iwamatsu, Takahiro Tsuruda, 1993, Proceedings of IEEE International Electron Devices Meeting.

Approaches to extra low voltage DRAM operation by SOI-DRAM

T. Iwamatsu, Narumi Sakashita, Masahide Inuishi, 1998 .