D. Farmer

发表

Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

P. Avouris, J. Appenzeller, Zhihong Chen, 2008, IEEE Electron Device Letters.

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

H. Dai, Jing Guo, D. Farmer, 2004, Nano letters.

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

C. Dimitrakopoulos, A. Grill, K. Jenkins, 2010, Science.

Wafer-Scale Graphene Integrated Circuit

C. Dimitrakopoulos, A. Grill, K. Jenkins, 2011, Science.

Carbon nanotube complementary wrap-gate transistors.

W. Haensch, J. Tersoff, S. Koswatta, 2013, Nano letters.

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

M. Lundstrom, Jing Guo, H. Dai, 2004, cond-mat/0406494.

High-frequency, scaled graphene transistors on diamond-like carbon

F. Xia, K. Jenkins, P. Avouris, 2011, Nature.

State-of-the-art graphene high-frequency electronics.

C. Dimitrakopoulos, F. Xia, K. Jenkins, 2012, Nano letters.

Impact of gate resistance in graphene radio frequency transistors

C. Dimitrakopoulos, P. Avouris, A. Valdes-Garcia, 2012 .

RF performance of short channel graphene field-effect transistor

C. Dimitrakopoulos, A. Grill, F. Xia, 2010, 2010 International Electron Devices Meeting.

Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz

K. Jenkins, P. Avouris, A. Valdes-Garcia, 2009, IEEE Electron Device Letters.

Development of graphene FETs for high frequency electronics

C. Sung, K. Jenkins, P. Avouris, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Graphene Electronics: Materials, Devices, and Circuits This paper demonstrates the use of graphene transistors in a four-port RF mixer. This mixer is capable of operating at frequencies up to 10 GHz.

F. Xia, P. Avouris, D. Farmer, 2013 .

Graphene field-effect transistors with self-aligned gates

P. Avouris, D. Farmer, Yu-Ming Lin, 2010 .

Operation of graphene transistors at gigahertz frequencies.

K. Jenkins, P. Avouris, A. Valdes-Garcia, 2008, Nano letters.

Operation of graphene transistors at gigahertz frequencies.

K. Jenkins, P. Avouris, A. Valdes-Garcia, 2008, Nano letters.

100 GHz Transistors from Wafer Scale Epitaxial Graphene

C. Dimitrakopoulos, A. Grill, K. Jenkins, 2010, 1002.3845.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

Jianshi Tang, Wilfried Haensch, Bharat Kumar, 2017, Nature nanotechnology.

Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers.

Wenjuan Zhu, Hugen Yan, Phaedon Avouris, 2014, Nano letters.

Chemical Doping of Graphene Nanoribbon Field-Effect Devices

Yu-Ming Lin, P. Avouris, D. Farmer, 2008, 2008 Device Research Conference.

Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

Jing Guo, Qian Wang, Ali Javey, 2004 .

Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

Fengnian Xia, Phaedon Avouris, Yu-Ming Lin, 2009, Nano letters.

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition.

Jing Kong, Wenjuan Zhu, Fengnian Xia, 2014, Nature communications.

Three-terminal graphene negative differential resistance devices.

Wenjuan Zhu, Phaedon Avouris, Yu-Ming Lin, 2012, ACS nano.

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

Keith A. Jenkins, Phaedon Avouris, Yu-Ming Lin, 2010 .

Passivation and thickness control of highly efficient kesterite solar cells

Douglas M. Bishop, D. Farmer, Priscilla D. Antunez, 2018, Applied Physics Letters.

High density Ru nanocrystal deposition for nonvolatile memory applications

D. Farmer, R. Gordon, 2007 .

Fabrication of an electrical spin transport device utilizing a diazonium salt/hafnium oxide interface layer on epitaxial graphene grown on 6 H-SiC(0001)

C. Dimitrakopoulos, C. Sung, A. Grill, 2012 .

Graphene-based fast electronics and optoelectronics

A. Grill, C. Dimitrakopoulos, A. Grill, 2010, 2010 International Electron Devices Meeting.

Carbon nanotube transistors scaled to a 40-nanometer footprint

Jerry Tersoff, Shu-Jen Han, J. Tersoff, 2017, Science.

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

M. Lundstrom, Jing Guo, H. Dai, 2004, cond-mat/0406494.

ALD of High- κ Dielectrics on Suspended Functionalized SWNTs

D. Farmer, R. Gordon, 2005 .

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition.

D. Farmer, A. Franklin, Felicia Mcguire, 2017, ACS applied materials & interfaces.

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

F. Xia, P. Avouris, D. Farmer, 2010, Nano letters.

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts.

H. Dai, Jing Guo, D. Farmer, 2004, Nano letters.

Decoupling graphene from SiC(0001) via oxidation

F. Mcfeely, D. Farmer, M. Copel, 2010, 1003.5702.

100-GHz Transistors from Wafer-Scale Epitaxial Graphene

C. Dimitrakopoulos, A. Grill, K. Jenkins, 2010, Science.

Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator

Douglas M. Bishop, P. Solomon, V. Narayanan, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays

P. Avouris, D. Farmer, T. Low, 2015, 1510.04216.

Surface chemistry and electrical properties of germanium nanowires.

H. Dai, Y. Chang, D. Farmer, 2004, Journal of the American Chemical Society.

High-frequency performance of scaled carbon nanotube array field-effect transistors

M. Engel, K. Jenkins, P. Avouris, 2012, 1208.0756.

Efficient narrow-band light emission from a single carbon nanotube p-n diode.

P. Avouris, D. Farmer, V. Perebeinos, 2010, Nature nanotechnology.

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

Josephine B. Chang, M. Engel, E. Joseph, 2016 .

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

F. Xia, J. Kong, P. Avouris, 2014, Nature Communications.

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

C. Dimitrakopoulos, A. Grill, K. Jenkins, 2010, 1006.0980.

Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics

H. Dai, M. Lundstrom, Jing Guo, 2003, Nano Letters.

Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes.

J. Tersoff, P. Avouris, D. Farmer, 2017, Physical review letters.

Multi-carrier Transport in Epitaxial Multi-layer Graphene

C. Dimitrakopoulos, A. Grill, P. Avouris, 2010, 1009.0183.

Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

F. Xia, K. Jenkins, P. Avouris, 2009, Nano letters.

Coupling-Enhanced Broadband Mid-infrared Light Absorption in Graphene Plasmonic Nanostructures.

F. Xia, D. Farmer, Shu-jen Han, 2016, ACS nano.

Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz

K. Jenkins, P. Avouris, A. Valdes-Garcia, 2009, IEEE Electron Device Letters.

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

C. Dimitrakopoulos, K. Jenkins, P. Avouris, 2011, IEEE Electron Device Letters.

Vapor Deposition of Ruthenium from an Amidinate Precursor

J. Vlassak, D. Farmer, R. Gordon, 2007 .

CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm

R. M. Martin, E. Joseph, M. Frank, 2014, IEEE Transactions on Electron Devices.

Metallization considerations for carbon nanotube device optimization

D. Farmer, 2022, Journal of Applied Physics.

Black Phosphorus Mid-Infrared Photodetectors with High Gain.

Hao Jiang, Q. Xia, F. Xia, 2016, Nano letters.

Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources

Holt P. Bui, J. Ott, D. Farmer, 2021 .

Nucleation and Adhesion of ALD Copper on Cobalt Adhesion Layers and Tungsten Nitride Diffusion Barriers

J. Vlassak, D. Farmer, R. Gordon, 2005 .

Atomic Layer Deposition to Fine-Tune the Surface Properties and Diameters of Fabricated Nanopores.

Peng Chen, Toshiyuki Mitsui, D. Branton, 2004, Nano letters.

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Phaedon Avouris, Michael Engel, Mathias Steiner, 2018, Nature Communications.

Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene.

P. Avouris, D. Farmer, T. Low, 2015, Nano letters.

Behavior of a chemically doped graphene junction

P. Avouris, D. Farmer, Yu-Ming Lin, 2009 .

Electric field assisted placement of carbon nanotubes using sacrificial graphene electrodes

M. Engel, P. Avouris, D. Farmer, 2018 .

Flexible CMOS integrated circuits based on carbon nanotubes with sub-10 ns stage delays

K. Jenkins, D. Farmer, G. Tulevski, 2018 .

Reducing contact resistance in graphene devices through contact area patterning.

C. Dimitrakopoulos, D. Farmer, A. Franklin, 2013, ACS nano.

Strong and Broadly Tunable Plasmon Resonances in Thick Films of Aligned Carbon Nanotubes.

P. Avouris, D. Farmer, G. Tulevski, 2017, Nano letters.

Stacking Graphene Channels in Parallel for Enhanced Performance With the Same Footprint

J. T. Smith, D. Farmer, A. Franklin, 2013, IEEE Electron Device Letters.

Plasma processing for advanced microelectronics beyond CMOS

D. Farmer, S. Engelmann, H. Miyazoe, 2021, Journal of Applied Physics.

Ultrasensitive Plasmonic Detection of Molecules with Graphene

Phaedon Avouris, Tony F. Heinz, Shu-Jen Han, 2016 .

Scalable Nanostructured Carbon Electrode Arrays for Enhanced Dopamine Detection.

D. Farmer, G. Tulevski, N. Marchack, 2018, ACS sensors.

High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.

M. Engel, H. Wong, D. Farmer, 2016, ACS nano.

Chemical doping and electron-hole conduction asymmetry in graphene devices.

Phaedon Avouris, Yu-Ming Lin, Vasili Perebeinos, 2008, Nano letters.

Charge trapping and scattering in epitaxial graphene

Phaedon Avouris, Yu-Ming Lin, Damon B. Farmer, 2011 .

Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

M. Engel, P. Avouris, D. Farmer, 2018, Nature Communications.

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

D. Farmer, R. Gordon, Kyoung-Ha Kim, 2006 .

Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization.

D. Farmer, R. Gordon, Damon B Farmer, 2006, Nano letters.

Graphene plasmons: properties and applications

Ying Li, Hugen Yan, Hongzhi Wang, 2014, Optics & Photonics - NanoScience + Engineering.

Graphene Electronics: Materials, Devices, and Circuits

Fengnian Xia, Phaedon Avouris, Yanqing Wu, 2013, Proceedings of the IEEE.

Intrinsically ultrastrong plasmon–exciton interactions in crystallized films of carbon nanotubes

Douglas M. Bishop, P. Avouris, J. Bucchignano, 2018, Proceedings of the National Academy of Sciences.

Coupling of Strongly Localized Graphene Plasmons to Molecular Vibrations

P. Avouris, D. Farmer, R. Osgood, 2016 .

High-Performance Carbon Nanotube Complementary Logic With End-Bonded Contacts

Jianshi Tang, Shu-Jen Han, Damon B. Farmer, 2017, IEEE Transactions on Electron Devices.

Graphene radio frequency devices on flexible substrate

Keith A. Jenkins, Wenjuan Zhu, Phaedon Avouris, 2013 .

Carbon nanotube complementary logic with low-temperature processed end-bonded metal contacts

D. Farmer, G. Tulevski, Q. Cao, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

W. Haensch, D. Farmer, H. Miyazoe, 2012, 2012 International Electron Devices Meeting.

Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography.

Guanxiong Liu, Phaedon Avouris, Yu-Ming Lin, 2012, ACS nano.

Effect of dual gate control on the alternating current performance of graphene radio frequency device

K. Jenkins, P. Avouris, D. Farmer, 2013 .

Graphene technology for RF and THz applications

C. Dimitrakopoulos, A. Grill, W. Haensch, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Graphene technology with inverted-T gate and RF passives on 200 mm platform

Keith A. Jenkins, Alberto Valdes-Garcia, Wilfried Haensch, 2011, 2011 International Electron Devices Meeting.

Raman Characterization and Polarity Tuning of Aligned Single-Walled Carbon Nanotubes on Quartz

Kang L. Wang, Chongwu Zhou, D. Farmer, 2010 .

Transient Investigation of Metal-oxide based, CMOS-compatible ECRAM

Paul M. Solomon, Teodor K. Todorov, Matthew Copel, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission

Harry A. Atwater, Robert J. Walters, Roy G. Gordon, 2004 .

Reducing contact resistance in graphene devices through contact area patterning.

C. Dimitrakopoulos, D. Farmer, A. Franklin, 2013, ACS nano.

Chemical doping and electron-hole conduction asymmetry in graphene devices.

P. Avouris, D. Farmer, G. Tulevski, 2008, Nano letters.

State-of-the-art graphene high-frequency electronics.

C. Dimitrakopoulos, F. Xia, K. Jenkins, 2012, Nano letters.