Ru Huang

发表

New insights into the design for end-of-life variability of NBTI in scaled high-κ/metal-gate Technology for the nano-reliability era

Ru Huang, Jinhua Liu, Runsheng Wang, 2014, 2014 IEEE International Electron Devices Meeting.

Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs

Yangyuan Wang, Runsheng Wang, Ru Huang, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

DTMOS mode as an effective solution of RTN suppression for robust device/circuit co-design

Weihai Bu, Hanming Wu, P. Ren, 2014, 2014 IEEE International Electron Devices Meeting.

New approach for understanding “random device physics” from channel percolation perspectives: Statistical simulations, key factors and experimental results

A. Asenov, B. Cheng, Runsheng Wang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition

Weihai Bu, Hanming Wu, P. Ren, 2013, 2013 IEEE International Electron Devices Meeting.

Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

Ru Huang, Shaofeng Yu, Yangyuan Wang, 2013, 2013 Symposium on VLSI Technology.

Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization

Ru Huang, Shaofeng Yu, Jiaxin Wang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

Ru Huang, Yangyuan Wang, Y. Qiu, 2012, 2012 International Electron Devices Meeting.

Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application

Yuchao Yang, Min Lin, Qingyu Chen, 2018, Science China Information Sciences.

Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Ru Huang, Yichen Fang, Zongwei Wang, 2016, Scientific Reports.

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Ru Huang, Jing Wang, Runsheng Wang, 2015, IEEE Transactions on Electron Devices.

Towards the systematic study of aging induced dynamic variability in nano-MOSFETs: Adding the missing cycle-to-cycle variation effects into device-to-device variation

Runsheng Wang, Jinhua Liu, Ru Huang, 2011, 2011 International Electron Devices Meeting.

Ge surface passivation by GeO2 fabricated by N2O plasma oxidation

Ming Li, Zhiqiang Li, Xing Zhang, 2015, Science China Information Sciences.

Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Xing Zhang, Ru Huang, Yu Tian, 2007, IEEE Transactions on Electron Devices.

A novel nanoscaled device concept: quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFET

Ru Huang, Yu Tian, Yangyuan Wang, 2005 .

Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs

Ru Huang, Yangyuan Wang, X. An, 2013 .

Scaling capability improvement of silicon-on-void (SOV) MOSFET

Ru Huang, Yu Tian, Xia An, 2005 .

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Ru Huang, Ming Li, Jiewen Fan, 2015, IEEE Transactions on Electron Devices.

Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile Memory Applications

Ru Huang, Yangyuan Wang, Yongbian Kuang, 2010, IEEE Electron Device Letters.

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Runsheng Wang, Ru Huang, Zhe Zhang, 2019, IEEE Electron Device Letters.

Quasi-SOI MOSFET: a novel architecture combining the advantages of SOI and bulk devices

Ru Huang, Yangyuan Wang, X. An, 2005 .

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Weihai Bu, M. Chan, Ru Huang, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Low insertion loss of 200 μm-long graphite coplanar waveguide

Ru Huang, Wang Zidong, Xing Zhang, 2016 .

Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps

Runsheng Wang, Shaofeng Guo, Ru Huang, 2017, Scientific Reports.

Understanding NBTI-induced dynamic variability in the nano-reliability Era: From devices to circuits

P. Ren, Runsheng Wang, Shaofeng Guo, 2015, 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.

AC Random Telegraph Noise (AC RTN) in Nanoscale MOS Devices

Runsheng Wang, Shaofeng Guo, Ru Huang, 2017 .

Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits

P. Ren, Runsheng Wang, Shaofeng Guo, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire Transistors

Runsheng Wang, Ru Huang, Yangyuan Wang, 2007, 2007 IEEE International Electron Devices Meeting.

New observations on AC NBTI induced dynamic variability in scaled high-κ/Metal-gate MOSFETs: Characterization, origin of frequency dependence, and impacts on circuits

Hanming Wu, P. Ren, Runsheng Wang, 2012, 2012 International Electron Devices Meeting.

On the origin of frequency dependence of single-trap induced degradation in AC NBTI

Runsheng Wang, Shaofeng Guo, Ru Huang, 2015, 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal?Oxide?Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

P. Kirsch, Runsheng Wang, Ru Huang, 2010 .

Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices

Runsheng Wang, Xiaobo Jiang, Shaofeng Guo, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

Memristor‐Based Efficient In‐Memory Logic for Cryptologic and Arithmetic Applications

Yuchao Yang, Yu Wang, Ru Huang, 2019, Advanced Materials & Technologies.

Novel silicon-based flash cell structures for low power and high density memory applications

Ru Huang, Yangyuan Wang, Yimao Cai, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Performance improvement of Si Pocket-Tunnel FET with steep subthreshold slope and high ION/IOFF ratio

Ru Huang, Yangyuan Wang, Y. Qiu, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Ru Huang, Yangyuan Wang, Y. Qiu, 2014 .

New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

Ru Huang, Yangyuan Wang, Qianqian Huang, 2017, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

Runsheng Wang, Ru Huang, Y. Qiu, 2014, IEEE Transactions on Electron Devices.

Deep insights into low frequency noise behavior of tunnel FETs with source junction engineering

Ru Huang, Yangyuan Wang, Qianqian Huang, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics

P. Ren, Runsheng Wang, Xiaobo Jiang, 2014 .

Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-blockade characteristics

Runsheng Wang, Ru Huang, Yangyuan Wang, 2009 .

A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology

Ru Huang, Yangyuan Wang, Runsheng Wang, 2013, 2013 IEEE International Electron Devices Meeting.

Localized metal doping effect on switching behaviors of TaOx-based RRAM device

Ru Huang, Yangyuan Wang, Yichen Fang, 2016, 2016 16th Non-Volatile Memory Technology Symposium (NVMTS).

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Yuchao Yang, Z. Rehman, Ru Huang, 2018, Advanced materials.

Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses

Yuchao Yang, Teng Zhang, Ru Huang, 2017 .

High-speed true random number generation based on paired memristors for security electronics

Ru Huang, Yuchao Yang, Minghui Yin, 2017, Nanotechnology.

A new efficient method for characterizing time constants of switching oxide traps

Ru Huang, Xing Zhang, Zhuoqing Yu, 2014, 2014 IEEE International Reliability Physics Symposium.

New understanding of the statistics of random telegraph noise in Si nanowire transistors - the role of quantum confinement and non-stationary effects

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, 2011 International Electron Devices Meeting.

Comparison of device performance and scaling capability of thin-body GOI and SOI MOSFETs

Ru Huang, Xing Zhang, Xia An, 2005 .

A Flat Lens with Tunable Phase Gradient by Using Random Access Reconfigurable Metamaterial

Hong Cai, Yuandong Gu, Ru Huang, 2015, Advanced materials.

A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices

C. Hu, M. Chan, Ru Huang, 2002 .

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Ru Huang, Yuchao Yang, Zhizhen Yu, 2018, IEEE Electron Device Letters.

Forming-Less Unipolar TaOx-Based RRAM with Large CC-Independence Range for High Density Memory Applications

Congyin Shi, Ru Huang, Yangyuan Wang, 2010 .

Novel Nanophase-Switching ESD Protection

Albert Z. Wang, H Zhao, Ru Huang, 2011, IEEE Electron Device Letters.

Design optimization of structural parameters in double gate MOSFETs for RF applications

Ru Huang, Yangyuan Wang, Jiale Liang, 2008 .

A novel body-on-insulator (BOI) FinFET with excellent TID tolerance and scaling capability

Ru Huang, X. An, Wanrong Zhang, 2019, Semiconductor Science and Technology.

Impact of heavy ion irradiation on CMOS current mirrors based on SOI and bulk Si substrates: mismatch and output impedance

Ru Huang, X. An, Xing Zhang, 2015 .

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

Ru Huang, X. An, Xing Zhang, 2010 .

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

Ru Huang, Xing Zhang, Runsheng Wang, 2008, IEEE Transactions on Electron Devices.

Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors

Yuchao Yang, F. Miao, Ru Huang, 2018, Scientific Reports.

High performance tunnel field-effect transistor by gate and source engineering

Ru Huang, Shaowen Chen, Xia An, 2014, Nanotechnology.

A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction

Ru Huang, Yangyuan Wang, Qianqian Huang, 2016, IEEE Transactions on Electron Devices.

Random Telegraph Noise in Multi-gate FinFET/Nanowire Devices and the Impact of Quantum Confinement

Runsheng Wang, Ru Huang, Changze Liu, 2013 .

New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors

Runsheng Wang, Ru Huang, Yangyuan Wang, 2011 .

Experimental Demonstration of Current Mirrors Based on Silicon Nanowire Transistors for Inversion and Subthreshold Operations

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, IEEE Transactions on Electron Devices.

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Ru Huang, Runsheng Wang, Yangyuan Wang, 2010, IEEE Transactions on Electron Devices.

Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology from top-down approach

Ru Huang, Run Wang, 2010 .

Investigation of Low-Frequency Noise in

Runsheng Wang, Ru Huang, Yangyuan Wang, 2009 .

Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

Ru Huang, Donggun Park, Runsheng Wang, 2009, IEEE Electron Device Letters.

Experimental investigations on channel backscattering characteristics of gate-all-around silicon nanowire transistors from top-down approach

Ru Huang, Donggun Park, Runsheng Wang, 2008 .

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Ru Huang, Xing Zhang, Yu Tian, 2007, IEEE Transactions on Electron Devices.

A Novel Gate-Coupled NMOS (gcNMOS) for FD-SOI ESD Protection

Ru Huang, Lizhong Zhang, Xiaotian Chen, 2019, 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC).

Novel gate-grounded NMOS Triggered Device Structures for FD-SOI ESD Protection

Ru Huang, Lizhong Zhang, Yandong He, 2019, 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC).

A novel BG-triggered ggNMOS structure for FD-SOI ESD protection

Ru Huang, Lizhong Zhang, Yandong He, 2018, 2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (EMC/APEMC).

Benchmark tests on conventional surface potential based charge-sheet models and the advanced PUNSIM development

M. Chan, Ru Huang, Yangyuan Wang, 2006 .

RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETs

Ru Huang, Yangyuan Wang, X. An, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

A closed-form capacitance model for tunnel FETs with explicit surface potential solutions

Ru Huang, Qianqian Huang, Jiaxin Wang, 2014 .

A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation

Ru Huang, Xia An, Yangyuan Wang, 2010 .

Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

Ru Huang, Donggun Park, Runsheng Wang, 2011, IEEE Transactions on Electron Devices.

Linearly graded doping drift region: A novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances

C. Hu, M. Chan, Ru Huang, 2002 .

Top-down fabrication of shape controllable Si nanowires based on conventional CMOS process

Runsheng Wang, Ru Huang, Yangyuan Wang, 2010 .

Error Correction Scheme for Reliable RRAM-Based In-Memory Computing

Runsheng Wang, Ru Huang, Yuan Wang, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Circuit Reliability Evaluation of Approximate Computing

Runsheng Wang, Ru Huang, Zhe Zhang, 2020, 2020 China Semiconductor Technology International Conference (CSTIC).

Impact of Circuit Limit and Device Noise on RRAM Based Conditional Generative Adversarial Network

Ru Huang, Zongwei Wang, Yimao Cai, 2020, 2020 China Semiconductor Technology International Conference (CSTIC).

A tantalum oxide memristor for artificial synapse applications

Ru Huang, Yichen Fang, Yimao Cai, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic

Ru Huang, Yuchao Yang, Zhizhen Yu, 2017 .

Comprehensive Study on the “Anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET Technology

Ru Huang, Zhe Zhang, Shaofeng Guo, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

TISI2 formation and mechanism through ultra-thin Al2O3 intermediation

Ru Huang, Ming Li, X. An, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Ru Huang, Xing Zhang, DaKe Wu, 2009 .

A TaOx based threshold switching selector for the RRAM crossbar array memory

Ru Huang, Yangyuan Wang, Cheng Chen, 2013, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.

High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique

Ru Huang, Ming Li, X. An, 2020, IEEE Electron Device Letters.

Highly scaled cmos device technologies with new structures and new materials

Jinfeng Kang, Ru Huang, Yangyuan Wang, 2006 .

Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations

Lin-wang Wang, Jun Luo, Runsheng Wang, 2019, Physical Review Applied.

Hot carrier induced degradation in mesa-isolated n-channel SOI MOSFETs operating in a Bi-MOS mode

Ru Huang, Yangyuan Wang, Xing Zhang, 2001 .

Source/drain architecture design of vertical channel nanowire FET for sub-10nm node

Ru Huang, Ming Li, Yuancheng Yang, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

A self-aligned, electrically separable double-gate MOS transistor technology for dynamic threshold voltage application

Ru Huang, Xinnan Lin, Mansun Chan, 2003 .

Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation

Ru Huang, X. An, Xing Zhang, 2016 .

A Novel RF LDMOS Fabricated With Standard Foundry Technology

Huailin Liao, Ru Huang, Yangyuan Wang, 2009, IEEE Electron Device Letters.

The impact of heavy ion irradiation on the performance of novel REDI LDMOS power devices

Ru Huang, X. An, Xing Zhang, 2019, Semiconductor Science and Technology.

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

Runsheng Wang, Ru Huang, Zhe Zhang, 2020, IEEE Transactions on Electron Devices.

Impact of leakage currents on MOSFET noise performance in deep sub-micron regime

Ru Huang, Xing Zhang, Hongwei Liu, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

A novel vertical channel self-aligned split-gate flash memory

Xing Zhang, Yangyuan Wang, Yimao Cai, 2009 .

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

Runsheng Wang, Ru Huang, Yangyuan Wang, 2013, IEEE Transactions on Electron Devices.

Modelling for the current-voltage characteristics of SOI submicrometre gate controlled hybrid transistors

R. Han, P. Ko, Ru Huang, 2001 .

Investigation of hot carrier effects in SOI nMOSFET's operating in a Bi-MOS mode with mesa isolation

Ru Huang, Yangyuan Wang, Xing Zhang, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Effective Crosstalk Isolation With Post-CMOS Selectively Grown Porous Silicon Technique for Radio Frequency System-on-Chip (SOC) Applications

Ru Huang, Yangyuan Wang, Chen Li, 2008, IEEE Electron Device Letters.

New observations of suppressed randomization in LER/LWR of Si nanowire transistors: Experiments and mechanism analysis

Ru Huang, Runsheng Wang, Yangyuan Wang, 2010, 2010 International Electron Devices Meeting.

Gate-All-Around Silicon Nanowire Transistor Technology

Runsheng Wang, Ru Huang, Ming Li, 2020 .

Simulation of correlated line-edge roughness in multi-gate devices

Runsheng Wang, Xiaobo Jiang, Ru Huang, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Design guideline of an ultra-thin body SOI MOSFET for low-power and high-performance applications

Ru Huang, Yangyuan Wang, X. An, 2004 .

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETs

Ru Huang, Yangyuan Wang, X. An, 2005 .

Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States

Ru Huang, John Robertson, Zongwei Wang, 2020, IEEE Transactions on Electron Devices.

Realization of Nanoscale Neuromorphic Memristor Array with Low Power Consumption

Ru Huang, Teng Zhang, Caidie Cheng, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain

Ru Huang, Poren Tang, Dake Wu, 2010 .

A flexible organic resistance memory device for wearable biomedical applications

Ru Huang, Min Lin, Yimao Cai, 2016, Nanotechnology.

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High $\text{I}_{\mathrm {ON}}/\text{I}_{\mathrm {OFF}}$ Ratio

Yuchao Yang, Ru Huang, Qianqian Huang, 2017, IEEE Electron Device Letters.

Design and simulation of a novel multi-floating-gate synaptic nanowire transistor for neuromorphic computing

Ru Huang, Ming Li, Xia An, 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Comprehensive analysis of the short channel effect in the SOI gate controlled hybrid transistor (GCHT)

Ru Huang, Yangyuan Wang, 1999 .

A high-performance SOI drive-in gate controlled hybrid transistor (DGCHT)

Ru Huang, Yangyuan Wang, Xing Zhang, 1998 .

RF Transmission Properties of Graphene with Coplanar Waveguide Structure

Ru Huang, Zujin Shi, Liming Ren, 2014 .

Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment

Ru Huang, Xing Zhang, Liming Ren, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Q-factors of CVD monolayer graphene and graphite inductors

Ru Huang, Xing Zhang, J. Wen, 2017 .

High-Q Integrated Inductor Using Post-CMOS Selective Grown Porous Silicon (SGPS) Technique for RFIC Applications

Ru Huang, Chen Li, H. Liao, 2007, RFIC 2007.

High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications

Ru Huang, Chen Li, H. Liao, 2007 .

Technology-Array-Algorithm Co-Optimization of RRAM for Storage and Neuromorphic Computing: Device Non-idealities and Thermal Cross-talk

Runsheng Wang, Ru Huang, Qingyu Chen, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

Ru Huang, Yichen Fang, Zongwei Wang, 2016 .

Thermal impact on the resistance switching properties in tantalum oxide based RRAM

Ru Huang, Yimao Cai, Yue Pan, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Record Low-Power Organic RRAM With Sub-20-nA Reset Current

Ru Huang, Yangyuan Wang, Yimao Cai, 2013, IEEE Electron Device Letters.

Body Bias Dependence of Bias Temperature Instability (BTI) in Bulk FinFET Technology

Runsheng Wang, Ru Huang, Zirui Wang, 2021, ENERGY & ENVIRONMENTAL MATERIALS.

Atomistic annealing simulation: kinetic lattice Monte Carlo

Ru Huang, Xing Zhang, Min Yu, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Study on the Ge1−xSnx/HfO2 interface and its impacts on Ge1−xSnx tunneling transistor

Runsheng Wang, Ru Huang, Y. Qiu, 2014 .

Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge ${\rm n}^{+}/{\rm p}$ Diode Achieved by Multiple Implantation and Multiple Annealing Technique

Ru Huang, Ming Li, Meng Lin, 2013, IEEE Electron Device Letters.

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

Xiaohui Liu, R. Han, P. Ko, 2003 .

Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering

Jun Z. Huang, N. Xu, D. Esseni, 2019, IEEE Transactions on Electron Devices.

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Ru Huang, X. An, Xing Zhang, 2013 .

Flexible Polymer Device Based on Parylene-C with Memory and Temperature Sensing Functionalities

Yuchao Yang, Ru Huang, Qingyu Chen, 2017, Polymers.

Co-design Circuit Simulation to Investigate the Failure of Devices under Surge Stress

Ru Huang, Yuan Wang, Yize Wang, 2019, 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC).

Formation of β-SiC nanowires by annealing SiC films in hydrogen atmosphere

Ru Huang, Xing Zhang, Li Yang, 2006 .

Novel Thermally Stable Single-Component Organic-Memory Cell Based on Oxotitanium Phthalocyanine Material

Yanlin Song, Ru Huang, Y. Wen, 2009, IEEE Electron Device Letters.

High-gate-injection tunneling field effect transistor for flash memory applications

Ru Huang, Qianqian Huang, Yimao Cai, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Counter-lightly-doped-drain (C-LDD) structure for Multi-level cell (MLC) NOR flash memory free of drain disturb

Ru Huang, Yimao Cai, Xing Zhang, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Unipolar $\hbox{TaO}_{x}$-Based Resistive Change Memory Realized With Electrode Engineering

Ru Huang, Yangyuan Wang, Y. Kuang, 2010, IEEE Electron Device Letters.

Low power and high uniformity of HfO$_{\boldsymbol~x}$-based RRAM via tip-enhanced electric fields

Ru Huang, Yuancheng Yang, L. Ming, 2020 .

Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High ${I_{{\mathrm {ON}}}}/{I_{{\mathrm {OFF}}}}$ Ratio”

Yuchao Yang, Ru Huang, Qianqian Huang, 2018, IEEE Electron Device Letters.

Accelerated Local Training of CNNs by Optimized Direct Feedback Alignment Based on Stochasticity of 4 Mb C-doped Ge2Sb2Te5 PCM Chip in 40 nm Node

Yuchao Yang, Teng Zhang, Zhitang Song, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Ru Huang, X. An, Xing Zhang, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Ru Huang, Xing Zhang, H. Zhuang, 2009 .

Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts.

Ru Huang, Xing Zhang, C. Xue, 2008, Dalton transactions.

Observation of Strong Reflection of Electron Waves Exiting a Ballistic Channel at Low Energy.

Jason P. Campbell, Ru Huang, Changze Liu, 2016, AIP advances.

On the AC random telegraph noise (RTN) in MOS devices: An improved multi-phonon based model

Ru Huang, Runsheng Wang, Jibin Zou, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

Ru Huang, Heng-Yuan Lee, Pang-Shiu Chen, 2011, 2011 International Reliability Physics Symposium.

A new fourth-order Gm-C CMOS polyphase filter for Low-IF receiver

Ru Huang, Bo Wang, Shan Liu, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Spontaneously Formed Closed Rings of Single-Wall Carbon Nanotube Bundles and Their Physical Mechanism

Z. Gu, Ru Huang, Xing Zhang, 2007 .

Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility

Xing Zhang, Ru Huang, Donggun Park, 2008, IEEE Transactions on Electron Devices.

Selective-Assembling Hybrid Porphyrin-Silicon Nanowire Field-Effect Transistor (PSNFET) for Photonic Sensor

Ru Huang, Zhihong Li, Ming Li, 2019, IEEE Electron Device Letters.

Realization of controllable graphene p–n junctions through gate dielectric engineering

Ru Huang, Qianqian Huang, Zhengzong Sun, 2015 .

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applications

Ru Huang, Yangyuan Wang, Xing Zhang, 2006 .

New Self-Aligned Silicon Nanowire Transistors on Bulk Substrate Fabricated by Epi-Free Compatible CMOS Technology: Process Integration, Experimental Characterization of Carrier Transport and Low Frequency noise

Ru Huang, Xing Zhang, Yu Tian, 2007, 2007 IEEE International Electron Devices Meeting.

A Sparse Event-Driven Unsupervised Learning Network with Adaptive Exponential Integrate-and-Fire Model

Ru Huang, Yuan Wang, Zhao Zhao, 2019, 2019 International Conference on IC Design and Technology (ICICDT).

A Multi-Mode Silicon Neuron Circuit With High Robustness Against PVT Variation

Jin Zhang, Lu Zhang, Yuan Wang, 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).

Compact digital-controlled neuromorphic circuit with low power consumption

Jin Zhang, Xing Zhang, Yuan Wang, 2017, 2017 IEEE International Symposium on Circuits and Systems (ISCAS).

Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors

Yu WANG, Rui YUAN, MA Mingyuan, 2020, Science China Information Sciences.

Characterization and analysis of gate-all-around Si nanowire transistors for extreme scaling

Tao Yu, Huailin Liao, Xin Huang, 2011, 2011 IEEE Custom Integrated Circuits Conference (CICC).

Characteristics and Fluctuation of Negative Bias Temperature Instability in Si Nanowire Field-Effect Transistors

Runsheng Wang, Ru Huang, Yangyuan Wang, 2008, IEEE Electron Device Letters.

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Runsheng Wang, Ru Huang, X. An, 2011, IEEE Electron Device Letters.

Growth of Gold Fractal Nanostructures by Electrochemical Deposition in Organic Electrolytes: Morphologies and Their Transitions

Ru Huang, Xing Zhang, Jia Liu, 2008 .

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

Ru Huang, Yangyuan Wang, DaKe Wu, 2008 .

Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors

F. Miao, Ru Huang, Jiaxin Wang, 2018, 1801.01742.

A Hardware Implementation of SNN-Based Spatio-Temporal Memory Model

Ru Huang, Yuan Wang, Huajin Tang, 2019, Front. Neurosci..

A native oxide high-κ gate dielectric for two-dimensional electronics

Jinxiong Wu, Congwei Tan, Binghai Yan, 2020, Nature Electronics.

Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement

Ru Huang, Yichen Fang, Yimao Cai, 2016 .

Dual-Gated MoS2 Neuristor for Neuromorphic Computing.

Ru Huang, Yuchao Yang, Zhizhen Yu, 2019, ACS applied materials & interfaces.

Probing memristive switching in nanoionic devices

Yuchao Yang, Ru Huang, Yuchao Yang, 2018 .

A Survey of Computation-Driven Data Encoding

Ru Huang, Yuan Wang, Runsheng Wang, 2019, 2019 IEEE International Workshop on Signal Processing Systems (SiPS).

Characteristics of NBTI in Multi-gate FETs for Highly Scaled CMOS Technology

Ru Huang, Runsheng Wang, Ming Li, 2014 .

Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

Ru Huang, X. An, Xing Zhang, 2010 .

Self-heating effects in gate-all-around silicon nanowire MOSFETs: Modeling and analysis

Xin Huang, Runsheng Wang, Tianwei Zhang, 2012, Thirteenth International Symposium on Quality Electronic Design (ISQED).

High-speed black phosphorus field-effect transistors approaching ballistic limit

Runsheng Wang, Ru Huang, Yanqing Wu, 2019, Science Advances.

New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

Ru Huang, Qianqian Huang, Cheng Chen, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal—Insulator—Metal—Oxide Gate Stack

Ru Huang, Yangyuan Wang, Qianqian Huang, 2014, IEEE Electron Device Letters.

Origin of Steep Subthreshold Swing Within the Low Drain Current Range in Negative Capacitance Field Effect Transistor

Ru Huang, Qianqian Huang, Zhongxin Liang, 2020, 2020 China Semiconductor Technology International Conference (CSTIC).

An Analytical Surface Potential Model Accounting for the Dual-Modulation Effects in Tunnel FETs

Ru Huang, Chao Wang, Jiaxin Wang, 2014, IEEE Transactions on Electron Devices.

A Novel Negative Capacitance Tunnel FET With Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation

Ru Huang, Qianqian Huang, Cheng Chen, 2019, IEEE Electron Device Letters.

Deep insight into the voltage amplification effect from ferroelectric negative capacitance

Qianqian Huang, Huimin Wang, Mengxuan Yang, 2019, Science China Information Sciences.

Experimental Study on the Transient Response of Negative Capacitance Tunnel FET

Ru Huang, Qianqian Huang, Yang Zhao, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Ru Huang, Qianqian Huang, Yang Zhao, 2019, 2019 China Semiconductor Technology International Conference (CSTIC).

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

Ru Huang, Qianqian Huang, Yang Zhao, 2019, 2019 China Semiconductor Technology International Conference (CSTIC).

Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy

B. Nguyen, Zuhuang Chen, Ru Huang, 2004 .

A RRAM based Max-Pooling Scheme for Convolutional Neural Network

Ru Huang, Zongwei Wang, Yimao Cai, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Extraction of Process Variation Parameters in FinFET Technology Based on Compact Modeling and Characterization

Ru Huang, Xiaobo Jiang, Zhe Zhang, 2018, IEEE Transactions on Electron Devices.

TD-SRAM: Time-Domain-Based In-Memory Computing Macro for Binary Neural Networks

Ru Huang, Yuan Wang, Runsheng Wang, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

Investigation of Double gate structure for RF application

Ru Huang, Ke Lei, Han Xiao, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing.

Ru Huang, Yuchao Yang, Yangyuan Wang, 2016, Nanoscale.

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2020, IEEE Transactions on Electron Devices.

Accelerated Aging in Analog and Digital Circuits With Feedback

Ru Huang, Yu Cao, Abinash Mohanty, 2015, IEEE Transactions on Device and Materials Reliability.

A novel flash memory cell and design optimization for high density and low power application

Ru Huang, Zhan Zhan, Qianqian Huang, 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits.

2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless Self-Power Chips in IoT

Ru Huang, Xiaolong Chen, Enbin Gong, 2020, 2020 IEEE International Symposium on Circuits and Systems (ISCAS).

Simulation on plasma doping for shallow junction formation

Ru Huang, Ming Li, Xing Zhang, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Microelectronics technologies in renewable energy internet

Huailin Liao, Ru Huang, Le Ye, 2014 .

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Ru Huang, Xing Zhang, Xin Huang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF Applications

Ru Huang, Xing Zhang, Runsheng Wang, 2008, IEEE Transactions on Electron Devices.

Low contact resistivity of Ti/TiN/Al for NiSi2 on epitaxial Si:P structure at full low-temperature process below 450 °C

Ru Huang, Ming Li, X. An, 2021, Semiconductor Science and Technology.

A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

Ru Huang, Zhihong Li, Ming Li, 2020, Science China Information Sciences.

Atomic simulation of ion implantation into HfO/sub 2/: LEACS vs. TSUPREM4

Ru Huang, Yangyuan Wang, Xing Zhang, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

A novel technique of silicon-on-nothing MOSFETs fabrication by hydrogen and helium co-implantation

Weihai Bu, Ru Huang, Yangyuan Wang, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Interfacial redox processes in memristive devices based on valence change and electrochemical metallization.

Ru Huang, Yuchao Yang, Keqin Liu, 2019, Faraday discussions.

Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity

Ru Huang, Yuchao Yang, Keqin Liu, 2018, Journal of Applied Physics.

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics

Ru Huang, Yuchao Yang, Ke Yang, 2019, Handbook of Memristor Networks.

Investigation on the Response of TaO $_{\rm x}$-based Resistive Random-Access Memories to Heavy-Ion Irradiation

Ru Huang, Yangyuan Wang, Yimao Cai, 2013, IEEE Transactions on Nuclear Science.

A Memristor-Based In-Memory Computing Network for Hamming Code Error Correction

Teng Zhang, Ru Huang, Yimao Cai, 2019, IEEE Electron Device Letters.

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

Ru Huang, Runsheng Wang, Zhenfeng Zhang, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons

Yuchao Yang, Ru Huang, Yichen Fang, 2018, Scientific Reports.

Tolerance of intrinsic device variation in fuzzy restricted Boltzmann machine network based on memristive nano-synapses

Yuchao Yang, Ru Huang, Yimao Cai, 2017 .

Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device.

Yuchao Yang, Xue Yang, Ru Huang, 2016, Nanoscale.

Resistance switching for RRAM applications

Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, 2011, Science China Information Sciences.

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Ru Huang, Yangyuan Wang, Ming Li, 2014 .

High-quality and large-grain epi-like Si film by NiSi2-seed initiated lateral epitaxial crystallization (SILEC)

Ru Huang, Ming Li, Xiaoyan Xu, 2020, Science China Information Sciences.

Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

Ru Huang, Yangyuan Wang, A.Z.H. Wang, 2009, IEEE Electron Device Letters.

Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs

Ru Huang, Runsheng Wang, Yangyuan Wang, 2011, IEEE Transactions on Electron Devices.

Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

Ru Huang, Yefan Liu, Wei Huang, 2017 .

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors

Ru Huang, Qianqian Huang, Jiadi Zhu, 2018, Scientific Reports.

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

Ru Huang, Wim Dehaene, Guido Groeseneken, 2011 .

Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing

Ru Huang, Yuchao Yang, Keqin Liu, 2019, APL Materials.

Theory and verification of operator design methodology

Ru Huang, Xing Zhang, Xin'an Wang, 2012, Science China Information Sciences.

A Spike-Event-Based Neuromorphic Processor with Enhanced On-Chip STDP Learning in 28nm CMOS

Ru Huang, Yuan Wang, Xiaoxin Cui, 2021, 2021 IEEE International Symposium on Circuits and Systems (ISCAS).

A novel compact low-power direct conversion receiver for mobile UHF RFID reader

Bo Wang, Xin'an Wang, Ru Huang, 2012, Science China Information Sciences.

Total Ionizing Dose (TID) Effects on $\hbox{TaO}_{x}$ -Based Resistance Change Memory

Ru Huang, Fei Tan, Yangyuan Wang, 2011, IEEE Transactions on Electron Devices.

Thermally stable TaOx-based resistive memory with TiN electrode for MLC application

Congyin Shi, Ru Huang, Yangyuan Wang, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Ru Huang, Yangyuan Wang, Yimao Cai, 2011 .

TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

Ru Huang, Ming Li, Shijie Hu, 2020, China Semiconductor Technology International Conference.

Program/erase injection current characteristics of a low-voltage low-power NROM using high-K materials as the tunnel dielectric

Ru Huang, Yangyuan Wang, Yimao Cai, 2006 .

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

Ru Huang, Yangyuan Wang, Jian Kang, 2017, Nanotechnology.

Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application

Ru Huang, Jian Kang, Guofang Zhong, 2020, IEEE Electron Device Letters.

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Ru Huang, David Z. Pan, Xiaobo Jiang, 2013, IEEE Transactions on Electron Devices.

Ultra-Low Power Hybrid TFET-MOSFET Topologies for Standard Logic Cells with Improved Comprehensive Performance

Le Ye, Yangyuan Wang, Yuan Zhong, 2019, 2019 IEEE International Symposium on Circuits and Systems (ISCAS).

Combinational Access Tunnel FET SRAM for Ultra-Low Power Applications

Le Ye, Cheng Chen, Ru Huang, 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage

Ru Huang, Yangyuan Wang, Qianqian Huang, 2011 .

Piezoelectric Tunnel FET With a Steep Slope

Jun Z. Huang, N. Xu, Ru Huang, 2020, IEEE Electron Device Letters.

Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

Ru Huang, Yu Tian, Donggun Park, 2009, IEEE Electron Device Letters.

Vertical assembly of carbon nanotubes for via interconnects

Huabo Zhao, Ru Huang, Xing Zhang, 2012 .

A Novel Leaky-FeFET Based True Random Number Generator with Ultralow Hardware Cost for Neuromorphic Application

Ru Huang, Qianqian Huang, Tianyi Liu, 2021, IEEE Electron Devices Technology and Manufacturing Conference.

Capacitor-less Stochastic Leaky-FeFET Neuron of Both Excitatory and Inhibitory Connections for SNN with Reduced Hardware Cost

Ru Huang, Jin Luo, Liang Chen, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Simulation on Boron Concentration Profile in Silicon Introduced by Plasma Doping

Ru Huang, Xing Zhang, Jinyan Wang, 2010, IEEE Transactions on Plasma Science.

Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors

Yuchao Yang, F. Miao, Ru Huang, 2018, Scientific Reports.

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire MOSFETs: Characteristic Modeling and the Impact on Circuit Aging

Ru Huang, Donggun Park, Runsheng Wang, 2010, IEEE Transactions on Electron Devices.

A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Ru Huang, Zongwei Wang, Yimao Cai, 2021, Electronics.

A Physics-Based Equivalent-Circuit Model for On-Chip Symmetric Transformers With Accurate Substrate Modeling

Chuan Wang, Huailin Liao, Ru Huang, 2009, IEEE Transactions on Microwave Theory and Techniques.

Scaling capability of GOI and SOI devices

Yi Wang, Ru Huang, Yangyuan Wang, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

Two-bit memory devices based on single-wall carbon nanotubes: demonstration and mechanism

Ru Huang, Xing Zhang, Zhennan Gu, 2007 .

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

Z. Gu, Ru Huang, Xing Zhang, 2007 .

Thermally assisted tunnelling in ambipolar field-effect transistors based on fullerene peapod bundles

Z. Gu, Ru Huang, Xing Zhang, 2006, Nanotechnology.

Gate-controlled rectifying behavior in C 70 @SWNTs networks

Z. Gu, Ru Huang, Xing Zhang, 2005 .

Field-effect transistors based on single-wall carbon nanotubes bundles

Z. Gu, Ru Huang, Xing Zhang, 2004, Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..

10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

Ru Huang, Yanqing Wu, Xuefei Li, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A study on a two-step technique of growing Ga2O3/ZnO films ammoniated at different temperatures

Ru Huang, Xing Zhang, H. Zhuang, 2009 .

Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

Ru Huang, Zhizhen Yu, Yimao Cai, 2020, IEEE Electron Device Letters.

The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems

Ru Huang, Zhichao Tan, Linxiao Shen, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

20.2 A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC

Ru Huang, Yangyuan Wang, Le Ye, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network

Ru Huang, Zhichao Tan, Linxiao Shen, 2021, IEEE Journal of Solid-State Circuits.

A Software-Defined Always-On System With 57–75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC

Ru Huang, Yangyuan Wang, Z. Tan, 2021, IEEE Journal of Solid-State Circuits.

A 64K-Neuron 64M-1b-Synapse 2.64pJ/SOP Neuromorphic Chip With All Memory on Chip for Spike-Based Models in 65nm CMOS

Ru Huang, Yuan Wang, Dunshan Yu, 2021, IEEE Transactions on Circuits and Systems II: Express Briefs.

A 28-nm 0.34-pJ/SOP Spike-Based Neuromorphic Processor for Efficient Artificial Neural Network Implementations

Ru Huang, Yuan Wang, Dunshan Yu, 2021, 2021 IEEE International Symposium on Circuits and Systems (ISCAS).

Circuit Reliability Comparison Between Stochastic Computing and Binary Computing

Ru Huang, Zhe Zhang, Zuodong Zhang, 2020, IEEE Transactions on Circuits and Systems II: Express Briefs.

A new simulation method of ion implantation

Ru Huang, Xing Zhang, Jinyu Zhang, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

REACE: A New Algorithm for Low Energy Ion Implantation Simulation.

Ru Huang, Yangyuan Wang, Xing Zhang, 2003 .

Atomistic simulation for shallow junction formation

Hideki Oka, Kunihiro Suzuki, Zhang Jinyu, 2003 .

Molecular dynamics simulation of ion implantation into hafnium dioxide

Ru Huang, Kunihiro Suzuki, Xing Zhang, 2004 .

Simulation of implantation into HfO/sub 2/ by MD method

Ru Huang, Xing Zhang, Min Yu, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

Simulation of implantation into HfO2 by MD method

Ru Huang, Xing Zhang, Min Yu, 2013 .

Molecular Dynamic Simulation on Boron Cluster Implantation for Shallow Junction Formation

Ru Huang, Yangyuan Wang, Xing Zhang, 2006, 2006 International Workshop on Junction Technology.

Towards reliability-aware circuit design in nanoscale FinFET technology: — New-generation aging model and circuit reliability simulator

Peng Hao, Yangyuan Wang, Runsheng Wang, 2017, 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

Effects of the sputtering time of ZnO buffer layer on the quality of GaN thin films

Ru Huang, Xing Zhang, H. Zhuang, 2008 .

The Impact of PTS Doping and Fin Angle on TID Response of 14-nm bulk FinFETs

Ru Huang, X. An, Wanrong Zhang, 2018, 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi₂O₂Se Nanosheets

Congwei Tan, H. Peng, Ru Huang, 2021, IEEE Electron Device Letters.

High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications

P. Ko, M. Chan, Ru Huang, 2000 .

New observations on the two-stage degradation of hot carrier reliability in high-k/metal-gate MOSFETs

Runsheng Wang, P. Hao, Shaofeng Guo, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

Ru Huang, Hao Zhu, Jiaxin Wang, 2014, 2014 IEEE International Electron Devices Meeting.

Design Guideline for Complementary Heterostructure Tunnel FETs With Steep Slope and Improved Output Behavior

Ru Huang, Jiaxin Wang, Yangyuan Wang, 2016, IEEE Electron Device Letters.

Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

Ru Huang, Xia An, Shuang Sun, 2019, Science China Information Sciences.

Body Bias Dependence of Hot Carrier Degradation (HCD) in Advanced FinFET Technology

P. Ren, Runsheng Wang, Ru Huang, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Ru Huang, Zhuoqing Yu, Runsheng Wang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Challenges of 22 nm and beyond CMOS technology

Yu Tian, Xing Zhang, Liangliang Zhang, 2009, Science in China Series F: Information Sciences.

Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects

Ru Huang, Donggun Park, Runsheng Wang, 2008, 2008 IEEE International Electron Devices Meeting.

Impacts of non-negligible electron trapping/detrapping on the NBTI characteristics in silicon nanowire transistors with TiN metal gates

Ru Huang, Donggun Park, Runsheng Wang, 2008, 2008 IEEE International Electron Devices Meeting.

Too Noisy at the Bottom? —Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits

Ru Huang, Runsheng Wang, Shaofeng Guo, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Layout-dependent aging mitigation for critical path timing

Meng Li, David Z. Pan, Xiaoqing Xu, 2018, 2018 23rd Asia and South Pacific Design Automation Conference (ASP-DAC).

New observation on gate-induced drain leakage in Silicon nanowire transistors with Epi-Free CMOS compatible technology on SOI substrate

Ru Huang, Ming Li, Jiewen Fan, 2013, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference.

New Insights Into Energy Efficiency of Tunnel FET With Awareness of Source Doping Gradient Variation

Ru Huang, Qianqian Huang, Rundong Jia, 2018, IEEE Transactions on Electron Devices.

Reliability variability simulation methodology for IC design: An EDA perspective

Ru Huang, Runsheng Wang, Shaofeng Guo, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Investigation on Electrostatic Discharge Robustness of Gate-All-Around Silicon Nanowire Transistors Combined With Thermal Analysis

Ru Huang, Ming Li, Jiewen Fan, 2017, IEEE Electron Device Letters.

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

Runsheng Wang, Ru Huang, Zhe Zhang, 2021, IEEE Transactions on Electron Devices.

Investigation of DIBL Degradation in Nanoscale FinFETs under Various Hot Carrier Stresses

Runsheng Wang, Ru Huang, Zhe Zhang, 2018, IEEE International Conference on Solid-State and Integrated Circuit Technology.

Study on microscopic model of resistive switching in amorphous tantalum pentoxide from first-principle calculations

Yuchao Yang, Ru Huang, Yichen Fang, 2018, China Semiconductor Technology International Conference.

TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence

Qi Guo, Ru Huang, Ming Li, 2020, IEEE Transactions on Nuclear Science.

Highly Power-Efficient Active-RC Filters With Wide Bandwidth-Range Using Low-Gain Push-Pull Opamps

Congyin Shi, Huailin Liao, Ru Huang, 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.

Re-Assessment of Steep-Slope Device Design From a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method

Le Ye, Ru Huang, Yangyuan Wang, 2021, IEEE Transactions on Circuits and Systems I: Regular Papers.

Multi-VT design of vertical channel nanowire FET for sub-10nm technology node

Ru Huang, Ming Li, Jiewen Fan, 2016, 2016 IEEE International Nanoelectronics Conference (INEC).

Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond

Ru Huang, Asen Asenov, Runsheng Wang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method

Ru Huang, Runsheng Wang, Jiang Chen, 2013, IEEE Transactions on Electron Devices.

Benchmarking TFET from a circuit level perspective: Applications and guideline

Le Ye, Cheng Chen, Xia An, 2017, 2017 IEEE International Symposium on Circuits and Systems (ISCAS).

New-Generation Design-Technology Co-Optimization (DTCO): Machine-Learning Assisted Modeling Framework

Zhe Zhang, Cheng Hu, Yangyuan Wang, 2019, 2019 Silicon Nanoelectronics Workshop (SNW).

Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain

Ru Huang, Runsheng Wang, Runsheng Wang, 2009 .

Time-dependent variability in RRAM-based analog neuromorphic system for pattern recognition

Ru Huang, Runsheng Wang, Jianfu Zhang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V

Runsheng Wang, Ru Huang, Yanqing Wu, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Novel polymer resistive memory based on parylene with high compatibility and scalability

Ru Huang, Yangyuan Wang, Y. Kuang, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

A two-dimensional physically-based current model for deep-submicrometer SOI dynamic threshold-voltage MOSFET

R. Han, Ru Huang, Yangyuan Wang, 2003 .

Resistive switching in organic memory devices for flexible applications

Yangyuan Wang, Ru Huang, Yimao Cai, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications

Ru Huang, Yangyuan Wang, Yongbian Kuang, 2012, IEEE Transactions on Electron Devices.

Monte Carlo simulations of gas flow and heat transfer in vacuum packaged MEMS devices

Ru Huang, Xing Zhang, Moran Wang, 2007 .

Vertical SnS2/Si heterostructure for tunnel diodes

Ru Huang, Rundong Jia, Qianqian Huang, 2019, Science China Information Sciences.

Bias and geometry dependence of total-ionizing-dose effects in SOI FinFETs

N. Xu, Runsheng Wang, Ru Huang, 2020, Semiconductor Science and Technology.

Interface Passivation Strategy for Ge pMOSFET From a TID Perspective

Ru Huang, X. An, Xing Zhang, 2019, IEEE Transactions on Nuclear Science.

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

Ru Huang, Meng Lin, X. An, 2012 .

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Ru Huang, Yingxin Qiu, Yangyuan Wang, 2011, 2011 International Electron Devices Meeting.

Investigation of NbOx-based volatile switching device with self-rectifying characteristics

Ru Huang, Yimao Cai, Zhizhen Yu, 2019, Science China Information Sciences.

Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

Li Wang, Zhihong Zhang, Ru Huang, 2018, 2018 Non-Volatile Memory Technology Symposium (NVMTS).

Encapsulation layer design and scalability in encapsulated vertical 3D RRAM

Ru Huang, Yuchao Yang, Zongwei Wang, 2016, Nanotechnology.

A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application

Ru Huang, Yangyuan Wang, Yimao Cai, 2012, IEEE Transactions on Electron Devices.

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Frederick T. Chen, M. Tsai, Weisu Chen, 2011, Nanotechnology.

SOI CMOS technology for RF/MMIC applications - yes or no?

Huailin Liao, Ru Huang, Guoyan Zhang, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

A Low-Voltage and Low-Power CMOS LNA Using Forward-Body-Bias NMOS at 5GHz

Ru Huang, Da-Ke Wu, Yang-Yuan Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Ru Huang, X. An, Xing Zhang, 2004 .

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Ru Huang, Xing Zhang, Li Yang, 2005 .

Total ionizing dose effects of novel vertical channel double-gate nMOSFETs

Ru Huang, X. An, Xing Zhang, 2009 .

Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)

Yuchao Yang, Z. Rehman, Ru Huang, 2018 .

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors

Ru Huang, Ming Li, Qianqian Huang, 2018, Scientific Reports.

Roughness of amorphous/crystalline interface in pre-amorphization implantation: Molecular dynamic simulation and modeling

Ru Huang, Yangyuan Wang, Xing Zhang, 2005 .

Stability of radio-frequency graphene field-effect transistors in ambient

Ru Huang, Xing Zhang, J. Wen, 2018, Journal of Physics D: Applied Physics.

New method for extraction of MOSFET parameters

Ru Huang, Xing Zhang, Yangyuan Wang, 2001 .

The Effects of Carbon on Phosphorus Diffusion and Activation in Ge

Ru Huang, Ming Li, X. An, 2019, 2019 China Semiconductor Technology International Conference (CSTIC).

Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

Chao Wang, Jiaxin Wang, Chunlei Wu, 2014, Science China Information Sciences.