P. Besson

发表

3DVLSI with CoolCube process: An alternative path to scaling

O. Faynot, F. Clermidy, G. Ghibaudo, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Copper Seed Layer Wet Etching for 3D Integration

P. Besson, L. Gabette, R. Kachtouli, 2014 .

Post SiN Etching Cleaning During Copper and Low K Integration

P. Besson, C. Arvet, D. Louis, 2001 .

Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration

P. Besson, L. Broussous, O. Hinsinger, 2003 .

Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration

J. Hartmann, C. Fenouillet-Béranger, V. Lapras, 2016, 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Thermochemistry and melting properties of basalt

P. Besson, A. Navrotsky, P. Richet, 2007 .

Study of ultrathin silicon oxide films by FTIR‐ATR and ARXPS after wet chemical cleaning processes

P. Besson, D. Rouchon, N. Rochat, 2002 .

GaAs WET and Siconi Cleaning Sequences for an Efficient Oxide Removal

P. Besson, V. Loup, Mickael Martin, 2019, ECS Journal of Solid State Science and Technology.

Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels

J. Hartmann, P. Besson, V. Loup, 2018 .

The 3100 bp eruption of the Soufrière of Guadeloupe A transmission electron microscopy study of the cryptodome andesite

P. Besson, J. Poirier, 1994 .

300 mm InGaAsOI substrate fabrication using the Smart CutTM technology

F. Fournel, C. Morales, J. Widiez, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

S. Sollier, J. Widiez, F. Fournel, 2016 .

Transfer of an AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding

L. Pinard, R. Flaminio, V. Hui, 2022, Photonics Europe.

Engineering strained silicon on insulator wafers with the Smart CutTM technology

Y. Bogumilowicz, N. Kernevez, Pascal Besson, 2004 .

Band offsets of nitrided ultrathin hafnium silicate films

P. Besson, F. Martin, O. Renault, 2006 .

Wet cleaning and surface characterization of Si1−xGex virtual substrates after a CMP step

Y. Campidelli, J. Hartmann, P. Besson, 2008 .

Infrared analysis of thin layers by attenuated total reflection spectroscopy

P. Besson, N. Rochat, F. Bertin, 2003 .

Reliable extraction of metal gate work function by combining two electrical characterization methods

G. Ghibaudo, G. Reimbold, J. Mitard, 2007, ESSDERC 2007 - 37th European Solid State Device Research Conference.

Variability of ash deposits at Piton de la Fournaise (La Reunion Island): insights into fragmentation processes at basaltic shield volcanoes

P. Besson, J. Nedelec, L. Gurioli, 2020, Bulletin of Volcanology.

The 2018-ongoing Mayotte submarine eruption: Magma migration imaged by petrological monitoring

P. Besson, A. Peltier, J. Komorowski, 2021 .

Shallow Magma Storage at Piton de la Fournaise Volcano After 2007 Summit Caldera Collapse Tracked in Pele's Hairs

P. Besson, N. Métrich, T. Staudacher, 2015 .

Critical Thickness Threshold in HfO2 Layers

T. Salvetat, P. Besson, S. Lhostis, 2007 .

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

M. Charles, P. Besson, M. Legallais, 2021, Applied Surface Science.

Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach

J. Pontcharra, P. Besson, D. Bouchu, 2006 .

Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications

P. Besson, V. Carron, F. Pierre, 2007 .

Dislocations in CaTiO3 perovskite deformed at high-temperature: a transmission electron microscopy study

P. Besson, G. D. Price, J. Poirier, 1996 .

Nucleation mechanisms : A crystal-chemical investigation of phases forming in highly supercooled aluminosilicate liquids

P. Besson, P. Richet, M. Toplis, 2005 .

Redox state, microstructure and viscosity of a partially crystallized basalt melt

P. Besson, P. Richet, M. Bouhifd, 2004 .

WET and Siconi® cleaning sequences for SiGe epitaxial regrowth

P. Besson, V. Loup, N. Bernier, 2020 .

Reduced pressure chemical vapour deposition of Si/Si1−x−yGexCy heterostructures using a chlorinated chemistry

D. Lafond, Pascal Besson, G. Rolland, 2003 .

GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization

J. Hartmann, P. Besson, V. Loup, 2019, Microelectronic Engineering.

Digital Etching of GaAs Materials: Comparison of Oxidation Treatments

P. Besson, L. Toselli, E. Martinez, 2016 .

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

Olivier Renault, P. Besson, François Martin, 2002 .

Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process

Gilles Reimbold, Christophe Licitra, Charles Leroux, 2010, IEEE Transactions on Electron Devices.

Nanosecond Laser Annealing for Phosphorous Activation in Ultra-Thin Implanted Silicon-On-Insulator Substrates

C. Fenouillet-Béranger, B. Mathieu, P. Besson, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Opportunities and challenges brought by 3D-sequential integration

G. Sicard, C. Fenouillet-Béranger, F. Andrieu, 2021, 2021 IEEE International Interconnect Technology Conference (IITC).

Low thermal budget surface preparation of Si and SiGe

J. Hartmann, P. Besson, P. Gentile, 2004 .

Non uniformities of silicon oxide films grown in peroxide mixtures

P. Besson, D. Rouchon, N. Rochat, 2005 .

3D Sequential Integration: Application-driven technological achievements and guidelines

X. Garros, O. Rozeau, O. Faynot, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

M. Charles, R. Modica, C. Gillot, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Evolution of Silicon Cleaning Technology Over the Last Twenty Years

Takeshi Hattori, P. Besson, Jerzy Ruzyllo, 2007, ECS Transactions.

An efficient wet-cleaning of SiGe virtual substrates and of thick, pure Ge layers on Si(001) after a chemical mechanical planarization step

Yves Campidelli, Pascal Besson, Y. Campidelli, 2006 .

Magnetic monitoring of hydrothermal magnetite nucleation-and-growth: Record of magnetic reversals

P. Besson, J. Pozzi, F. Brunet, 2004 .

Si and SiGe Alloys Wet Etching Using TMAH Chemistry

P. Besson, S. Petitdidier, L. Gabette, 2013 .

Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks

X. Garros, P. Batude, S. Deleonibus, 2007 .

STM study of ultra-thin (<2 nm) silicon oxide

J. Eymery, J. Hartmann, P. Besson, 2003 .

Single Backside Cleaning on Silicon, Silicon Nitride and Silicon Oxide

M. Frank, P. Besson, L. Broussous, 2005 .

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

X. Garros, Laurent Vandroux, Pascal Besson, 2007 .

Core level photoemission study of nitrided hafnium silicate thin films

P. Besson, F. Martin, O. Renault, 2007 .

Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling

G. Mugny, R. Bianchi, P. Besson, 2022, OPTO.

A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration

C. Fenouillet-Béranger, F. Andrieu, X. Garros, 2021, IEEE Transactions on Electron Devices.

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, D. Lafond, S. Deleonibus, 2005, IEEE Electron Device Letters.

Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- $\kappa$ Dielectrics, and Metallic Source/Drain

M. Vinet, D. Lafond, S. Deleonibus, 2009, IEEE Electron Device Letters.

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

O. Rozeau, G. Ghibaudo, P. Batude, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

O. Faynot, P. Batude, M. Vinet, 2016, 2016 IEEE Symposium on VLSI Technology.

Ruthenium Wet Etch on 200mm MEMS Wafers with Sodium Hypochlorite

P. Besson, L. Gabette, R. Segaud, 2009 .

(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

Maud Vinet, Stephane Monfray, Frederic Boeuf, 2016 .

Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces

P. Besson, D. Rouchon, N. Rochat, 2005 .

Resonant optical microcavity based on crystalline silicon active layer

D. Sotta, Hubert Moriceau, P. Besson, 2002 .

Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection

P. Besson, N. Rochat, S. Zoll, 2003 .

EUV mask blank: defect detection at 100 nm

Catherine Pelle, Jean Hue, Etienne Quesnel, 2003, SPIE Advanced Lithography.

New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI

X. Garros, P. Batude, M. Vinet, 2014, 2014 IEEE International Electron Devices Meeting.