Tetsuhiro Suzuki

发表

Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire

H. Ohno, S. Fukami, Tetsuhiro Suzuki, 2011 .

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

H. Ohno, M. Hayashi, S. Fukami, 2012, Nature materials.

Transition in mechanism for current-driven magnetic domain wall dynamics

Tetsuhiro Suzuki, T. Ono, D. Chiba, 2014 .

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy

Kohroh Kobayashi, Tetsuhiro Suzuki, Akiko Gomyo, 1987 .

Micromagnetic analysis of current driven domain wall motion in nanostrips with perpendicular magnetic anisotropy

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2008 .

Analysis of current-driven domain wall motion from pinning sites in nanostrips with perpendicular magnetic anisotropy

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2008 .

Reduction of critical current density for domain wall motion in U-shaped magnetic patterns

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2008 .

High-speed Magnetic Memory based on Spin-Torque Domain Wall Motion

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2009 .

Room-temperature, continuous-wave operation for mode-stabilised AlGaInP visible-light semiconductor laser with a multiquantum-well active layer

Kohroh Kobayashi, Tetsuhiro Suzuki, A. Gomyo, 1988 .

Second Order Optical Process of a Three-Level System in Contact with a Nearly Gaussian-Markoffian Noise Bath

Tetsuhiro Suzuki, Ryogo Kubo, Tetsuhiro Suzuki, 1989 .

Performance of write-line inserted magnetic tunneling junction for low-write-current magnetic random access memory cell

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2008 .

Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO.

H. Ohno, M. Hayashi, S. Fukami, 2012, Nature materials.

Preparation of NiAl2O4 Spinel by Corrosion Synthesis

Tetsuhiro Suzuki, O. Seri, Daichi Sasaki, 2013 .

Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire

Hideo Ohno, Shunsuke Fukami, Nobuyuki Ishiwata, 2011 .

Temperature dependence of carrier spin polarization determined from current-induced domain wall motion in a Co/Ni nanowire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2012 .

Magnetic configuration of submicron-sized magnetic patterns in domain wall motion memory

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2010 .

Different stochastic behaviors for magnetic field and current in domain wall creep motion

Tetsuhiro Suzuki, T. Ono, T. Moriyama, 2014 .

Current-Induced Magnetic Domain Wall Motion in Co/Ni Nanowire at Low Temperature

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2011 .

Domain Wall Motion Induced by Electric Current in a Perpendicularly Magnetized Co/Ni Nano-Wire

S. Fukami, Tetsuhiro Suzuki, Y. Nakatani, 2009 .

Observation of stripe‐direction dependence of threshold current density for AlGaInP laser diodes with CuPt‐type natural superlattice in Ga0.5In0.5P active layer

Tetsuhiro Suzuki, A. Gomyo, Y. Ueno, 1992 .

Control of Multiple Magnetic Domain Walls by Current in a Co/Ni Nano-Wire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2010 .

Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion

Tetsuhiro Suzuki, N. Ohshima, H. Tanigawa, 2012 .

Thickness dependence of current-induced domain wall motion in a Co/Ni multi-layer with out-of-plane anisotropy

S. Fukami, Tetsuhiro Suzuki, N. Ohshima, 2013 .

Magnetic field insensitivity of magnetic domain wall velocity induced by electrical current in Co/Ni nanowire

S. Fukami, Tetsuhiro Suzuki, Y. Nakatani, 2011 .

Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2011 .

Stack Structure Dependence of Co/Ni Multilayer for Current-Induced Domain Wall Motion

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2010 .

Shielded magnetoresistive head for high density recording

T. Maruyama, Toru Tatsumi, Tetsuhiro Suzuki, 1990 .

Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets

Tetsuhiro Suzuki, T. Ono, D. Chiba, 2014 .

Current-Induced Magnetic Domain Wall Motion in a Co/Ni Nanowire with Structural Inversion Asymmetry

Tetsuhiro Suzuki, Y. Nakatani, T. Ono, 2013 .

Large thermal stability independent of critical current of domain wall motion in Co/Ni nanowires with step pinning sites

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2010 .

Relation between critical current of domain wall motion and wire dimension in perpendicularly magnetized Co/Ni nanowires

Shunsuke Fukami, Nobuyuki Ishiwata, Tetsuhiro Suzuki, 2009 .

A 90nm 12ns 32Mb 2T1MTJ MRAM

Yuichi Ito, Hiroaki Honjo, Yosuke Kobayashi, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

Low write-current magnetic random access memory cell with anisotropy-varied free layers

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2008 .

MRAM Cell Technology for Over 500-MHz SoC

N. Sakimura, H. Honjo, S. Saito, 2007, IEEE Journal of Solid-State Circuits.

Tradeoff between low-power operation and thermal stability in magnetic domain-wall-motion devices driven by spin Hall torque

Tetsuhiro Suzuki, Kab-Jin Kim, Teruo Ono, 2014 .

Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions

H. Ohno, S. Fukami, Tetsuhiro Suzuki, 2012 .

Shielded MR head for high-density magnetic recording (invited)

T. Maruyama, Toru Tatsumi, Tetsuhiro Suzuki, 1990 .

Low writing field with large writing margin in toggle magnetic random access memories using synthetic antiferromagnet ferromagnetically coupled with soft magnetic layers

Tetsuhiro Suzuki, S. Tahara, Y. Fukumoto, 2006 .

Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

S. Fukami, Tetsuhiro Suzuki, N. Ishiwata, 2006, 2009 Symposium on VLSI Technology.