Kunihiro Suzuki

发表

/spl alpha/-particle-induced soft errors in submicron SOI SRAM

Y. Tosaka, T. Sugii, Kunihiro Suzuki, 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.

Scaling theory for double-gate SOI MOSFET's

Y. Tosaka, Kunihiro Suzuki, Y. Arimoto, 1993 .

Short-channel single-gate SOI MOSFET model

S. Pidin, Kunihiro Suzuki, S. Pidin, 2003 .

Analytical surface potential expression for thin-film double-gate SOI MOSFETs

Y. Tosaka, Kunihiro Suzuki, Y. Arimoto, 1994 .

Analytical base transit time model for high-injection regions

Kunihiro Suzuki, 1994 .

Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration

K. Suzuki, Kunihiro Suzuki, 2001 .

Short channel epi-MOSFET model

Kunihiro Suzuki, 2000 .

Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs

T. Sugii, Y. Tosaka, T. Sugii, 1996 .

Analytical threshold voltage model for short channel double-gate SOI MOSFETs

T. Sugii, Yoshiharu Tosaka, Y. Tosaka, 1996 .

Analytical Models for n ++ -p Double-Gate SO1 MOSFET' s

Toshihiro Sugii, T. Sugii, Kunihiro Suzuki, 1995 .

Parasitic capacitance of submicrometer MOSFET's

Kunihiro Suzuki, 1999 .

Alpha-particle-induced collected charge model in SOI-DRAM's

Yoshiharu Tosaka, Shigeo Satoh, Y. Tosaka, 1999 .

Measurements and analysis of neutron-reaction-induced charges in a silicon surface region

Toshihiro Sugii, Yoshiharu Tosaka, Shigeo Satoh, 1997 .

Optimum base doping profile for minimum base transit time

Kunihiro Suzuki, Kunihiro Suzuki, 1991 .

High-concentration diffusion profiles of low-energy ion-implanted B, As and BF2 in bulk silicon

Kunihiro Suzuki, 2001 .

Emitter and base transit time of polycrystalline silicon emitter contact bipolar transistors

Kunihiro Suzuki, 1991 .

Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates

Kunihiro Suzuki, H. Ishiwara, 1984 .

Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Tetsu Tanaka, Shigeo Satoh, Satoshi Ando, 1993 .

Model for Transient Enhanced Diffusion of Ion-Implanted Boron, Arsenic, and Phosphorous over Wide Range of Process Conditions

Kunihiro Suzuki, 2003 .

Parameter Extraction Procedure for Ion Implantation Profiles to Establish Robust Database based on Tail Function

Kunihiro Suzuki, Kojima Shuichi, 2010 .

Attachment Coefficient of Fine Particles to Aerosol Particles in Transient State

Kunihiro Suzuki, 1988 .

Multiple Sb ion implantation for deep-submicron pMOS channel doping

T. Sugii, Kunihiro Suzuki, A. Satoh, 1997 .

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

T. Aoyama, Kunihiro Suzuki, H. Tashiro, 1999 .

Nitrogen Concentration Dependence on Boron Diffusion in Thin Silicon Oxynitrides Used for Metal‐Oxide‐Semiconductor Devices

T. Aoyama, Kunihiro Suzuki, H. Tashiro, 1998 .

Boron Diffusion Through Pure Silicon Oxide and Oxynitride Used for Metal‐Oxide‐Semiconductor Devices

T. Yamazaki, T. Aoyama, Kunihiro Suzuki, 1993 .

Ion-Implanted B Concentration Profiles in Ge

Y. Yamashita, S. Takagi, Kunihiro Suzuki, 2007 .

Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling

S. Satoh, Kunihiro Suzuki, K. Fukuda, 2014 .

Diffusion coefficient of indium in Si substrates and analytical redistribution profile model

T. Aoyama, Kunihiro Suzuki, H. Tashiro, 1999 .

High-Precision Evaluation of Ultra-Shallow Impurity Profiles by Secondary Ion Mass Spectrometry

Yuji Kataoka, Kunihiro Suzuki, Yoko Tada, 2010 .

Segregation under low-energy oxygen bombardment in the near-surface region

Kunihiro Suzuki, Y. Kataoka, Y. Tada, 2008 .

Phase Variation and Amplitude Fading of NWC-22.3kHz Signal at Dawn

Kunihiro Suzuki, K. Baba, T. Yoshioka, 1973 .

Time Evolution of the Resistance of Arsenic, Phosphorous, and Boron-Doped Crystalline Silicon

T. Aoyama, Kunihiro Suzuki, H. Tashiro, 2002 .

Continuous measurements of outdoor radon concentrations at various locations in East Asia

Kunihiro Suzuki, T. Iida, Y. Ikebe, 1996 .

Binary homogeneous nucleation theory by Cluster-Cluster interaction with application to the H2SO4-H2O system

Kunihiro Suzuki, V. Mohnen, 1981 .

Short channel MOSFET model using a universal channel depletion width parameter

Kunihiro Suzuki, 2000 .

Edge Disturbance on Ion Measurements with the Gerdien Condenser

Kunihiro Suzuki, 1978 .

Effects of Collisions on Whistler-Mode Ray Tracing

Kunihiro Suzuki, K. Baba, 1973 .

Models of boron redistribution during thermal oxidation with general oxidation rate

Kunihiro Suzuki, T. Miyashita, 2000 .

Segregation Coefficient of Boron and Arsenic at Polycrystalline Silicon / SiO2 Interface

Kunihiro Suzuki, Y. Yamashita, K. Kawamura, 1993 .

Segregation coefficient of impurities at polycrystalline Si/HfO2 interfaces

Kunihiro Suzuki, H. Minakata, M. Yamaguchi, 2005 .

Unified minority-carrier transport equation for polysilicon or heteromaterial emitter contact bipolar transistors

Kunihiro Suzuki, 1991 .

Source/drain contact resistance of silicided thin-film SOI MOSFET's

Y. Tosaka, T. Sugii, Kunihiro Suzuki, 1994 .

Monte Carlo Simulation for Ion Implantation Profiles, Amorphous Layer Thickness Formed by the Ion Implantation, and Database Based on Pearson Function

Kunihiro Suzuki, 2011 .

Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride

Hiroko Tashiro, Tatsuya Yamazaki, Takashi Ito, 1995 .

Diffusion coefficient of boron in tungsten silicide

Kunihiro Suzuki, H. Horie, Y. Yamashita, 1990 .

Asymmetric peak line shape of infrared dielectric function spectra for thermally grown silicon dioxide films

Kenji Ishikawa, Kunihiro Suzuki, K. Ishikawa, 2000 .

High activation of Sb during solid-phase epitaxy and deactivation during subsequent thermal process

Kunihiro Suzuki, H. Tashiro, 2003 .

Atomistic simulation for shallow junction formation

Hideki Oka, Kunihiro Suzuki, Zhang Jinyu, 2003 .

Molecular dynamics simulation of ion implantation into hafnium dioxide

Ru Huang, Kunihiro Suzuki, Xing Zhang, 2004 .

Ion implantation impurity profiles in HfO/sub 2/

Kunihiro Suzuki, Y. Morisaki, 2002 .

Ion Implantation Impurity Profiles in HfO

Kunihiro Suzuki, Y. Morisaki, 2002 .

A d.c. intrinsic base resistance model considering resistivity modulation for arbitrarily doped transistors

Kunihiro Suzuki, J. W. Waters, 1993 .

Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO2 Chemical Vapor Deposition

T. Aoyama, Kunihiro Suzuki, H. Arimoto, 1999 .

Analytical models for n/sup +/-p/sup +/ double-gate SOI MOSFET's

T. Sugii, T. Sugii, Kunihiro Suzuki, 1995 .

High concentration impurity diffusion profile model

Kunihiro Suzuki, 2000 .

Analytical Model for Spike Annealed Diffusion Profiles of Low-Energy and High-Dose Ion Implanted Impurities

Kunihiro Suzuki, H. Tashiro, 2003 .