H. Ishida

发表

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

H. Ishida, Y. Hirose, T. Murata, 2005, IEEE Transactions on Electron Devices.

High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board

H. Ishida, D. Ueda, E. Fujii, 2014 .

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

H. Ishida, Y. Uemoto, T. Tanaka, 2007, IEEE Transactions on Electron Devices.

Novel Three-Phase Two-Third-Modulated Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

J. Kolar, D. Bortis, H. Ishida, 2019, 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).

GaN-based Gate Injection Transistors for power switching applications

H. Handa, H. Ishida, T. Ueda, 2014, 2014 IEEE International Electron Devices Meeting.

A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation

H. Ishida, Y. Uemoto, T. Tanaka, 2006, 2006 International Electron Devices Meeting.

A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifter

Kazuya Yamamoto, K. Maemura, Y. Mitsui, 1992 .

650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

H. Matsuo, Y. Uemoto, M. Hikita, 2007, 2007 IEEE International Electron Devices Meeting.

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, IEEE Electron Device Letters.

GaN-based natural super junction diodes with multi-channel structures

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, 2008 IEEE International Electron Devices Meeting.

AlGaN/GaN devices for future power switching systems

Y. Uemoto, M. Hikita, T. Tanaka, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

Ryutaro Futakuchi, Daisuke Ueda, Hidetoshi Ishida, 2014, IEEE Journal of Photovoltaics.

High-efficiency Thin and Compact Concentrator Photovoltaics using Micro-solar Cells with Via-holes Sandwiched between Thin Lens-array and Circuit Board

H. Ishida, D. Ueda, E. Fujii, 2013 .

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

H. Matsuo, Y. Uemoto, S. Nagai, 2007, 2007 IEEE International Electron Devices Meeting.

Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift

K. Ishikawa, Y. Inoue, H. Ishida, 2012 .

Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift

K. Ishikawa, Y. Inoue, H. Ishida, 2011, IEEE Transactions on Electron Devices.

A GaAs MMIC chip-set for mobile communications using on-chip ferroelectric capacitors

T. Tanaka, D. Ueda, G. Kano, 1993, 1993 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Present and future prospects of gan-based power electronics

Y. Uemoto, M. Hikita, T. Tanaka, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

GaN-based semiconductor devices for future power switching systems

H. Ishida, T. Ueda, T. Morita, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Mechanism of Current-Collapse-Free Operation in E-Mode GaN Gate Injection Transistors Employed for Efficient Power Conversion

H. Ishida, T. Ueda, T. Morita, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

H. Ishida, T. Ueda, M. Ishida, 2014 .

GaN-based Gate Injecti

H. Handa, H. Ishida, T. Ueda, 2014 .

GaN Power Electron Devices

H. Ishida, Y. Uemoto, D. Ueda, 2011 .

GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer

H. Ishida, T. Murata, D. Ueda, 2011, 2011 International Electron Devices Meeting.

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

H. Ishida, Y. Hirose, T. Murata, 2006 .

100 A Solid State Circuit Breaker Using Monolithic GaN Bidirectional Switch with Two-Step Gate-Discharging Technique

H. Ishida, Y. Kinoshita, Asamira Suzuki, 2020, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC).

A fully-integrated broadband amplifier MMIC employing a novel chip size package

Young Yun, Hidetoshi Ishida, Toshihide Nobusada, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Selective Growth of Cubic SiC on Si by Chemical Vapor Deposition

H. Ishida, S. Nishino, K. Takahashi, 1992 .

Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

Gaudenzio Meneghesso, Enrico Zanoni, Hidetoshi Ishida, 2014 .

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs

H. Ishida, M. Meneghini, G. Meneghesso, 2019, IEEE Transactions on Electron Devices.

A fully-integrated broadband amplifier MMIC employing a novel chip size package

T. Tanaka, M. Katsuno, T. Nobusada, 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

J. Kolar, D. Bortis, H. Ishida, 2019, CPSS Transactions on Power Electronics and Applications.

Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor

Hidetoshi Ishida, Masahiro Hikita, Tetsuzo Ueda, 2015 .

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire

Hidetoshi Ishida, Tetsuzo Ueda, Masayuki Kuroda, 2007 .

High power 3-phase to 3-phase matrix converter using dual-gate GaN bidirectional switches

Fumito Kusama, Yusuke Kinoshita, Hidetoshi Ishida, 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).

A low-current and low-distortion wideband amplifier using 0.2-/spl mu/m gate MODFET fabricated by using phase-shift lithography

H. Ishida, D. Ueda, H. Takenaka, 2000 .

A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs

H. Koizumi, T. Tanaka, D. Ueda, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

A Fully-Integrated MMIC Technology Employing a Novel Chip-Size Package

H. Ishida, Tsuyoshi Tanaka, M. Nishijima, 2004 .

Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor

Hidetoshi Ishida, Tetsuzo Ueda, Hidekazu Umeda, 2016 .

High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board

H. Ishida, D. Ueda, E. Fujii, 2013 .

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Kaoru Inoue, Hidetoshi Ishida, Tetsuzo Ueda, 2010, IEEE Transactions on Electron Devices.