Y. Ikeda

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

H. Ishida, Y. Hirose, T. Murata, 2005, IEEE Transactions on Electron Devices.

Development of III-Nitride Based Electron Devices

Y. Ikeda, T. Matsuno, Kaoru Inoue, 2001 .

Novel GaN-based MOS HFETs with thermally oxidized gate insulator

Y. Ikeda, K. Inoue, K. Nishii, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process

Y. Ikeda, K. Inoue, K. Nishii, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

WSiN/SiO2 capped annealing for Si‐implanted GaAs

Kaoru Inoue, Y. Ikeda, Kaoru Inoue, 1990 .