T. Egawa

发表

A high-power RF switch IC using AlGaN/GaN HFETs with single-stage configuration

H. Ishida, Y. Hirose, T. Murata, 2005, IEEE Transactions on Electron Devices.

Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

T. Egawa, Z. I. Kazi, T. Jimbo, 1999, IEEE Photonics Technology Letters.

Three-terminal monolithic cascade GaAs/Si solar cells

M. Umeno, T. Egawa, T. Jimbo, 1994 .

High efficiency AlGaAs/Si tandem solar cell over 20%

M. Umeno, T. Egawa, T. Jimbo, 1996 .

Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Distortion in Difference Frequency under Two-Tone Signal Input Evaluated with Volterra Series Analysis

T. Egawa, A. Wakejima, Keiichi Tamesue, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

M. Umeno, T. Egawa, Z. I. Kazi, 2001 .

Effects of Dislocation and Stress on Characteristics of GaAs-Based Laser Grown on Si by Metalorganic Chemical Vapor Deposition

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1992 .

Improved reverse blocking characteristics in AlGaN=GaN Schottky barrier diodes based on AlN template

T. Egawa, T. Shibata, M. Miyoshi, 2007 .

DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

T. Egawa, H. Ishikawa, O. Oda, 2005 .

An AlGaN/GaN field effect diode with a high turn‐on voltage controllability

T. Egawa, A. Wakejima, K. Itoh, 2017 .

AlGaN/GaN devices for future power switching systems

Y. Uemoto, M. Hikita, T. Tanaka, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Takashi Jimbo, Tatsuo Ozeki, Hiroyasu Ishikawa, 2004 .

High-electron-mobility AlGaN∕AlN∕GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

Osamu Oda, Keiichiro Asai, Hiroyasu Ishikawa, 2004 .

Influence of barrier height and p-cladding layer on electroluminescent performance of AlGaN deep ultraviolet light-emitting diodes

J. Zhang, T. Egawa, Shuxin Tan, 2016 .

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011 .

Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties

N. Taoka, T. Egawa, M. Shimizu, 2017 .

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2000 .

Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1997 .

Low-temperature continuous-wave operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers on Si substrates

M. Umeno, T. Egawa, T. Jimbo, 1997, IEEE Photonics Technology Letters.

Increased lifetime of aluminum-free LEDs on Si substrates grown by MOCVD

M. Umeno, T. Egawa, T. Jimbo, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Stable operation in 0.87-μm light-emitting diode on Si substrate using Al-free materials

M. Umeno, T. Egawa, T. Jimbo, 1995, IEEE Photonics Technology Letters.

Room-temperature pulsed operation of AlGaAs/GaAs vertical-cavity surface-emitting laser diode on Si substrate

T. Egawa, T. Egawa, T. Jimbo, 1994, IEEE Photonics Technology Letters.

Characterization of single quantum wells on GaAs/Si grown by metalorganic chemical vapor deposition

M. Umeno, T. Egawa, T. Jimbo, 1994, IEEE Photonics Technology Letters.

Optical and electrical degradations of GaAs‐based laser diodes grown on Si substrates

M. Umeno, T. Egawa, T. Jimbo, 1994 .

Room-Temperature Operation of Vertical-Cavity Surface-Emitting Laser on Si Substrate

M. Umeno, T. Egawa, T. Jimbo, 1993 .

Low-threshold AlGaAs/GaAs vertical-cavity surface-emitting laser on Si substrate at 300 K

M. Umeno, T. Egawa, T. Jimbo, 1993, Proceedings of IEEE International Electron Devices Meeting.

Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth

T. Egawa, M. Umeno, T. Egawa, 1992, IEEE Photonics Technology Letters.

Strain-Relieved Reliable Lasers Grown on Si By MOCVD

M. Umeno, T. Egawa, T. Jimbo, 1992 .

The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors

T. Egawa, M. Miyoshi, P. Dalapati, 2022, Optical Materials.

Growth of InxGa1−xAs quantum dots by metal–organic chemical vapor deposition on Si substrates and in GaAs-based lasers

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 2001 .

Potential for normally-off operation from GaN metal oxide semiconductor devices based upon semi-insulating GaN

T. Egawa, O. Oda, S. L. Selvaraj, 2013 .

Self-formed In0.2Ga0.8As quantum dot-like laser grown by metal organic chemical vapor deposition on Si substrate

M. Umeno, T. Egawa, Z. I. Kazi, 2000 .

AlGaAs/GaAs light-emitting diode on a Si substrate with a self-formed GaAs islands active region grown by droplet epitaxy

M. Umeno, T. Egawa, T. Jimbo, 1996 .

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

T. Egawa, A. Watanabe, D. Christy, 2014 .

Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Present and future prospects of gan-based power electronics

Y. Uemoto, M. Hikita, T. Tanaka, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Improved Threshold Voltage Uniformity in GaAs MESFET Using High Purity MOCVD-Grown Buffer Layer as a Substrate for Ion Implantation

Yoshiaki Sano, Masahiro Akiyama, Takashi Egawa, 1984 .

LEDs Based on Heteroepitaxial GaN on Si Substrates

T. Egawa, O. Oda, 2017 .

Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates

T. Egawa, O. Oda, 2013 .

InGaN-based blue LED grown on Si(111) substrate

Z. Hassan, T. Egawa, A. Shuhaimi, 2011, 2011 IEEE Regional Symposium on Micro and Nano Electronics.

Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on si

T. Egawa, T. Jimbo, Baijun Zhang, 2004 .

InGaN multiple-quantum-well light emitting diodes on Si(111) substrates

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Optical degradation of InGaN/AlGaN light‐emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1996 .

EBIC observation of n-GaN grown on sapphire substrates by MOCVD

M. Umeno, T. Egawa, T. Jimbo, 1998 .

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

G. Ng, T. Egawa, S. Arulkumaran, 2011 .

Improved Power Device Figure-of-Merit (4.0×108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

N. G. Ing, T. Egawa, S. Arulkumaran, 2011 .

Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

Ying Sun, T. Egawa, M. Heuken, 2018, Journal of Crystal Growth.

Highly efficient GaN-based light emitting diodes with micropits

T. Egawa, H. Ishikawa, M. Hao, 2006 .

Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate

T. Egawa, A. Ubukata, Y. Yano, 2019, Semiconductor Science and Technology.

Local gate leakage current induced by inhomogeneous epitaxial growth in AlGaN/GaN high-electron-mobility transistors

T. Egawa, A. Wakejima, T. Narita, 2016 .

Pd/InAlN Schottky diode with low reverse current by sulfide treatment

T. Egawa, K. Fujita, Z. Chen, 2011 .

High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire template

T. Egawa, Hao Jiang, 2007 .

Improved performance of 264 nm emission AIGaN-based deep ultraviolet light-emitting diodes

T. Egawa, T. Shibata, Jicai Zhang, 2008 .

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

Honghai Deng, T. Egawa, Shuxin Tan, 2017, Electronic Materials Letters.

Demonstration on GaN-based light-emitting diodes grown on 3C-SiC/Si(111)

T. Egawa, Jianping Zhang, Z. Chen, 2009 .

GaN growth on 150-mm-diameter (1 1 1) Si substrates

T. Egawa, A. Yamaguchi, A. Ubukata, 2007 .

Thermal stability of GaN on (111)Si substrate

M. Umeno, T. Egawa, T. Jimbo, 1998 .

High‐Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

M. Umeno, T. Egawa, T. Jimbo, 1999 .

III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel

K. Uchida, M. Umeno, T. Egawa, 1996 .

Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes

T. Egawa, Mitsuhiro Tanaka, M. Miyoshi, 2007 .

Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer

Lei Li, T. Egawa, M. Miyoshi, 2016, IEEE Photonics Journal.

Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers

T. Egawa, M. Miyoshi, Lei Li, 2015 .

Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures

T. Egawa, Y. Okabe, M. Miyoshi, 2016 .

Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates

T. Egawa, M. Miyoshi, T. Kubo, 2017 .

Analysis of carrier trapping and emission in AlGaN/GaN HEMT with bias‐controllable field plate

T. Egawa, A. Wakejima, Suguru Mase, 2017 .

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

T. Egawa, Y. Yoshida, T. Kubo, 2015 .

Deep Traps in InAlN Lattice-Matched to GaN Grown by Metal Organic Chemical Vapor Deposition Studied by Deep-Level Transient Spectroscopy

T. Egawa, K. Fujita, Y. Sakai, 2011 .

Electron Traps in n-GaN Grown on Si (111) Substrates by MOVPE

T. Egawa, Tsuneo Ito, Y. Terada, 2008 .

Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal?Insulator?Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

N. G. Ing, T. Egawa, S. Arulkumaran, 2009 .

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

M. Umeno, T. Egawa, T. Jimbo, 2000 .

Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition

M. Umeno, T. Egawa, T. Jimbo, 2000 .

CBE-grown high-quality GaAs on Si substrate

M. Umeno, T. Egawa, T. Jimbo, 1996 .

Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

T. Egawa, T. Jimbo, H. Ishikawa, 2003, IEEE Electron Device Letters.

Effect of n-GaN thickness on internal quantum efficiency in InxGa1-xN multiple-quantum-well light emitting diodes grown on Si (111) substrate

T. Egawa, L. Lu, Z. Chen, 2011 .

Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

T. Egawa, Z. Ye, Mingsheng Xu, 2018 .

Trivalent Al3+ ion conduction in aluminum tungstate solid

T. Egawa, Y. Kobayashi, G. Adachi, 1997 .

Trivalent aluminum ionic conduction in the aluminum tungstate-scandium tungstate-lutetium tungstate solid solution system

T. Egawa, Y. Kobayashi, G. Adachi, 1998 .

Trivalent Aluminum Ionic Conduction in the Aluminum Tungstate—Scandium Tungstate—Lutetium Tungstate Solid Solution System.

T. Egawa, Y. Kobayashi, G. Adachi, 1998 .

Characteristics of Mocvd-Grown AlGaAs/GaAs Sqw Lasers and GaAs Mesfetsfabrication on Si Substrate with SiO 2 -Back Coating

S. Nozaki, M. Umeno, T. Egawa, 1990 .

Room-Temperature CW Operation of AlGaAs/GaAs SQW Lasers on Si Substrates by MOCVD Using AlGaAs/AlGaP Intermediate Layers

Y. Hayashi, M. Umeno, T. Egawa, 1990 .

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

T. Egawa, Shuxin Tan, 2019, Journal of Semiconductors.

Growth of InGaN-based laser diode structure on silicon (111) substrate

T. Egawa, Youhua Zhu, B. Shuhaimi, 2009 .

Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

T. Egawa, A. Watanabe, B. Shuhaimi, 2010 .

Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes

T. Egawa, Shuxin Tan, Jicai Zhang, 2018, Applied Sciences.

Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

T. Egawa, T. Jimbo, G. Zhao, 2001 .

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

T. Egawa, K. Baskar, Y. Sano, 2005 .

Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Reduction of threading dislocations in AlGaN layers grown on AlN∕sapphire templates using high-temperature GaN interlayer

T. Egawa, H. Jiang, M. Hao, 2005 .

Low-Dark-Current High-Performance AlGaN Solar-Blind p-i-n Photodiodes

Hao Jiang, Takashi Egawa, Hao Jiang, 2008 .

Ultraviolet Photodetectors Using Transparent Gate AlGaN/GaN High Electron Mobility Transistor on Silicon Substrate

T. Egawa, A. Wakejima, T. Narita, 2013 .

AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC

T. Egawa, H. Ishikawa, H. Jiang, 2006, IEEE Photonics Technology Letters.

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

T. Egawa, Suguru Mase, J. Freedsman, 2018 .

Effect of Drift Layer on the Breakdown Voltage of Fully-Vertical GaN-on-Si p-n Diodes

T. Egawa, Suguru Mase, J. Freedsman, 2017, IEEE Electron Device Letters.

Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

T. Egawa, M. Miyoshi, A. Watanabe, 2016 .

Low specific ON-resistance and high Figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks

G. Ng, T. Egawa, H. Wang, 2013, 71st Device Research Conference.

Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

T. Egawa, K. Shiojima, Y. Yamaoka, 2017 .

Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor

N. Taoka, T. Egawa, M. Shimizu, 2017 .

Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

T. Egawa, A. Wakejima, A. Ando, 2015 .

Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

T. Egawa, A. Ubukata, Y. Yano, 2014 .

High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

T. Egawa, T. Kubo, J. Freedsman, 2013, IEEE Transactions on Electron Devices.

High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

T. Egawa, K. Yamasaki, T. Deguchi, 2012, IEEE Electron Device Letters.

Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

Enhancement-mode Al2O3/InAlN/GaN MOS-HEMT on Si with high drain current density 0.84 A/mm and threshold voltage of +1.9 V

T. Egawa, A. Watanabe, J. Freedsman, 2014, 72nd Device Research Conference.

MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown

T. Egawa, S. L. Selvaraj, Kazuhiro Nagai, 2010, 68th Device Research Conference.

Step-Stress Reliability Studies on AlGaN/GaN High Electron Mobility Transistors on Silicon with Buffer Thickness Dependence

T. Egawa, A. Wakejima, A. F. Wilson, 2013 .

Electron mobility on AlGaN/GaN heterostructure interface

M. Umeno, T. Egawa, T. Jimbo, 2000 .

Impact of the AlN nucleation layer on the variation of the vertical‐direction breakdown voltage of AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

T. Egawa, A. Ubukata, Y. Yano, 2013 .

Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 200 mm Si (111) Substrate

T. Egawa, 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

A Comparative Study of InGaN/GaN Multiple‐Quantum‐Well Solar Cells Grown on Sapphire and AlN Template by Metalorganic Chemical Vapor Deposition

T. Egawa, M. Ohta, M. Miyoshi, 2018 .

Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

T. Egawa, A. Wakejima, A. F. Wilson, 2013 .

Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

T. Egawa, H. Ishikawa, S. Arulkumaran, 2005 .

Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors

T. Egawa, T. Kubo, J. Freedsman, 2014 .

High-Performance E-Mode AlGaN/GaN HEMTs with LT-GaN Cap Layer Using Gate Recess Techniques

T. Egawa, T. Deguchi, A. Nakagawa, 2008, 2008 Device Research Conference.

Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed $I{-}V$ Measurements

T. Egawa, A. Wakejima, Suguru Mase, 2013, IEEE Transactions on Electron Devices.

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

H. Ishida, Y. Hirose, T. Murata, 2006 .

Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

T. Egawa, H. Ishikawa, M. Miyoshi, 2005 .

MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

T. Egawa, T. Jimbo, H. Ishikawa, 2004 .

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

T. Egawa, T. Jimbo, Tomoyuki Yamada, 2003 .

Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses.

T. Egawa, M. Miyoshi, P. Dalapati, 2021, Optics letters.

Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures

T. Egawa, T. Kubo, Debaleen Biswas, 2019, Semiconductor Science and Technology.

Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate

T. Egawa, Hao Jiang, Y. Liu, 2006 .

Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations

T. Egawa, M. Miyoshi, P. Dalapati, 2021, AIP Advances.

Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing

T. Egawa, T. Kubo, 2017 .

Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate

T. Egawa, N. Miura, T. Ozeki, 2004 .

Improvement of Au‐Free, Ti/Al/W Ohmic Contact on AlGaN/GaN Heterostructure Featuring a Thin‐Ti Layer and Low Temperature Annealing

T. Egawa, Takahiro Yoshida, T. Yoshida, 2018 .

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

T. Egawa, Y. Sugawara, Y. Ishikawa, 2017 .

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

T. Egawa, Y. Sugawara, Y. Ishikawa, 2016 .

Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers

T. Egawa, T. Kubo, J. Freedsman, 2012 .

12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

T. Egawa, M. Itoh, F. Toda, 2009 .

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

Takashi Jimbo, Yoshiaki Sano, Hiroyasu Ishikawa, 2004 .

Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulators

T. Egawa, K. Baskar, Y. Sano, 2005 .

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

M. Umeno, T. Egawa, T. Jimbo, 1998 .

Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes

T. Egawa, T. Jimbo, Y. Sakai, 2011 .

Enhanced mobility for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, S. L. Selvaraj, A. Watanabe, 2011, 69th Device Research Conference.

Numerical and experimental analyses of two-dimensional electron mobility in Al(In,Ga)N/AlGaN heterostructures

T. Egawa, M. Miyoshi, S. Fujita, 2015 .

Optical Absorption and Photoluminescence Studies of n-type GaN

Hao Jiang, M. Umeno, T. Egawa, 1999 .

Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate

T. Egawa, Baijun Zhang, H. Ishikawa, 2006 .

Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact

T. Egawa, K. Fujita, Z. Chen, 2011, IEEE Electron Device Letters.

Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN

T. Egawa, K. Fujita, Z. Chen, 2011 .

Effect of thermal cyclic growth on deep levels in heterostructures grown by MOCVD

M. Umeno, T. Egawa, T. Jimbo, 1997 .

Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition

S. Nozaki, M. Umeno, T. Egawa, 1990 .

Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties

T. Egawa, O. Oda, A. Watanabe, 2014 .

Demonstration of fully‐vertical GaN‐on‐Si power MOSFETs using regrowth technique

T. Egawa, Debaleen Biswas, Naoki Torii, 2019, Electronics Letters.

Electrical Transport Properties of GaSb Grown by Molecular Beam Epitaxy

M. Umeno, T. Egawa, T. Jimbo, 1998 .

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice

T. Egawa, Tatsuya Ito, A. Watanabe, 2014 .

Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes

T. Egawa, M. Miyoshi, S. Fujita, 2015 .

Experimental and simulation study on ultraviolet light emission from quaternary InAlGaN quantum wells with localized carriers

T. Egawa, M. Miyoshi, Masataka Kato, 2014 .

A comparison on the Electrical Characteristics of SiO2, SiON and SiN as the Gate Insulators for the Fabrication of AlGaN/GaN Metal–Oxide/Insulator–Semiconductor High-Electron Mobility-Transistors

T. Egawa, K. Baskar, Y. Sano, 2005 .

Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

T. Egawa, H. Ishikawa, S. Arulkumaran, 2005 .

1.4 kV breakdown voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate

T. Egawa, A. Wakejima, S. L. Selvaraj, 2012, 70th Device Research Conference.

Influence of Annealing Atmosphere on the Epitaxial Graphene Growth on 3C-SiC (111)/Si (111)

T. Egawa, K. Fujita, H. Aryal, 2011 .

A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs∕GaAs triple quantum wells

T. Egawa, H. Ishikawa, Yijun Sun, 2004 .

GaAs / AlGaAs SQW Optical Switch on Si

M. Umeno, T. Egawa, T. Jimbo, 1992 .

Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization

T. Egawa, T. Takeuchi, M. Miyoshi, 2019, physica status solidi (a).

Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

T. Egawa, T. Takeuchi, M. Miyoshi, 2019, Journal of Crystal Growth.

MOCVD-grown SQWs on Si with AlGaAs/AlGaP intermediate layers and/or thermal cycle annealing: application to room-temperature CW lasers

M. Umeno, T. Egawa, T. Jimbo, 1991 .

Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition

T. Egawa, T. Kubo, 2019, Physica B: Condensed Matter.

Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface

T. Egawa, M. Miyoshi, Lei Li, 2018 .

Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

M. Umeno, T. Egawa, T. Jimbo, 1999 .

Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure

T. Egawa, Takahiro Yoshida, 2018, Semiconductor Science and Technology.

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

T. Egawa, S. L. Selvaraj, S. Tan, 2010 .

Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching

T. Egawa, M. Hori, M. Sekine, 2012 .

Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition

T. Egawa, T. Takeuchi, M. Miyoshi, 2021 .

Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

T. Egawa, K. Hiramatsu, Jiejun Wu, 2009 .

Metal–Organic Chemical Vapor Deposition Growth and Characterization of InAlGaN Multiple Quantum Wells

T. Egawa, Y. Sakai, 2009 .

Defect Propagation from 3C-SiC to III-Nitride

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

Defect Propagation from 3C-SiC Intermediate Layers to III–Nitride Epilayers

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices

T. Egawa, Y. Sugawara, Y. Ishikawa, 2016 .

Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector with High Internal Gain

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Low ohmic-contact resistance in recessed-gate normally-off AlGaN/GaN MIS-HEMT with δ-doped GaN Cap Layer

K. Inoue, T. Egawa, A. Wakejima, 2015, 2015 73rd Annual Device Research Conference (DRC).

Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

T. Egawa, M. Miyoshi, Yuta Miyachi, 2016 .

High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination

T. Egawa, K. Matsubayashi, A. Nakagawa, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Identification of local gate leakage with electroluminescence using AlGaN/GaN HEMTS

T. Egawa, A. Wakejima, T. Narita, 2014 .

Investigations on AlGaN/GaN Hetero-Structures and High Electron Mobility Transistor

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Characteristics of Recessed Gate AlGaN / GaN HEMTs on Sapphire Substrate

M. Umeno, T. Egawa, T. Jimbo, 2000 .

Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage

T. Egawa, J. Freedsman, T. Hamada, 2017, IEEE Electron Device Letters.

Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN

T. Egawa, K. Fujita, Z. Chen, 2012 .

Origin and Appearance of Defective Pits in the Gate–Drain Region during Reliability Measurements of AlGaN/GaN High-Electron-Mobility Transistors on Si

T. Egawa, A. Wakejima, A. F. Wilson, 2013 .

Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

T. Egawa, A. Watanabe, J. Freedsman, 2015 .

Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface

T. Egawa, M. Miyoshi, Yuta Miyachi, 2017 .

High-voltage AlGaN/GaN HFETs by using graded gate field plates

T. Egawa, K. Yamasaki, T. Deguchi, 2012 .

Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

T. Egawa, M. Miyoshi, P. Dalapati, 2021 .

Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template

T. Egawa, M. Miyoshi, P. Dalapati, 2020 .

Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21)

A. Uedono, T. Egawa, M. Miyoshi, 2022, Journal of Applied Physics.

Recessed Gate AlGaN/GaN HEMT on Sapphire Grown by MOCVD

M. Umeno, T. Egawa, H. Ishikawa, 2000 .

Study on the Electron Overflow in 264 nm AlGaN Light-Emitting Diodes

T. Egawa, Jicai Zhang, Y. Sakai, 2010, IEEE Journal of Quantum Electronics.

Molecular beam epitaxial growth of AlGaAs p-n junctions on GaAs(111)A substrates using only silicon dopant

M. Umeno, T. Egawa, T. Jimbo, 1995 .

Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes

T. Egawa, M. Miyoshi, Lei Li, 2019, Applied Physics Express.

Vertically-stacked GaAs quantum wires grown on Si substrates by metalorganic chemical vapor deposition

M. Umeno, T. Egawa, T. Jimbo, 1994 .

Pd/GaN Schottky Diode with a Barrier Height of 1.5 eV and a Reasonably Effective Richardson Coefficient

M. Umeno, T. Egawa, T. Jimbo, 1998 .

AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy

M. Umeno, T. Egawa, T. Jimbo, 1996, International Electron Devices Meeting. Technical Digest.

Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells

T. Egawa, T. Jimbo, H. Ishikawa, 2003 .

Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition

T. Egawa, T. Jimbo, H. Ishikawa, 2003 .

Trivalent scandium ion conduction in the scandium tungstate–alumina composites

T. Egawa, G. Adachi, T. Asano, 1999 .

Trivalent Ion Conduction of the Sc2(WO4)3–Gd2(WO4)3 System

T. Egawa, Y. Kobayashi, G. Adachi, 1998 .

High Anatase-Rutile Transformation Temperature of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition

T. Egawa, Liang-ying Zhang, X. Yao, 2002 .

Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

T. Tanaka, T. Ueda, H. Ishikawa, 2005, IEEE Transactions on Electron Devices.

Heteroepitaxial growth of III–V compound semiconductors for optoelectronic devices

T. Egawa, T. Jimbo, M. Umeno, 1999 .

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1999 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature

T. Egawa, M. Miyoshi, P. Dalapati, 2021 .

High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

H. Ishikawa, T. Egawa, T. Egawa, 2005, IEEE Electron Device Letters.

Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells

T. Egawa, M. Miyoshi, Takuma Mori, 2017 .

Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

T. Egawa, M. Miyoshi, Takuma Mori, 2017 .

Growth of Gaas on Si Using Algap Intermediate Layer

S. Nozaki, T. Egawa, T. Jimbo, 1989 .

Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

T. Egawa, K. Fujita, H. Aryal, 2012 .

Formation Mechanism for High-Surface-Area Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition

T. Egawa, Liang-ying Zhang, X. Yao, 2004 .

Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition

T. Egawa, T. Takeuchi, N. Okada, 2021 .

A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate

T. Egawa, T. Takeuchi, M. Miyoshi, 2019, Japanese Journal of Applied Physics.

Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers

T. Egawa, M. Miyoshi, D. Hosomi, 2018, Japanese Journal of Applied Physics.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

T. Egawa, T. Takeuchi, M. Miyoshi, 2018 .

Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition

T. Egawa, M. Miyoshi, S. Fujita, 2015 .

High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

T. Egawa, T. Jimbo, Baijun Zhang, 2004 .

Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition

M. Umeno, T. Egawa, T. Jimbo, 1998 .

The infrared optical functions of AlxGa1−xN determined by reflectance spectroscopy

Takashi Jimbo, Tetsuo Soga, Hiroyasu Ishikawa, 1998 .

Current collapse-free i-GaN /AlGaN/GaN high-electron-mobility transistors with and without surface passivation

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2004 .

High-temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors fabricated on sapphire substrate: Analysis of photovoltaic and carrier transit time properties

T. Egawa, M. Miyoshi, P. Dalapati, 2022, Journal of Vacuum Science & Technology B.

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 2002 .

Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks

T. Egawa, N. Fukuhara, T. Osada, 2023, Journal of Applied Physics.

The Dependence of Threshold Voltage Scattering of GaAs MESFET on Annealing Method

Yoshiaki Sano, Takashi Egawa, Katsuzo Kaminishi, 1985 .

High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

T. Egawa, B. Shuhaimi, 2010 .

Annealing technology under arsenic overpressure for GaAs LSI–influence on dislocation and threshold voltage

T. Egawa, K. Kaminishi, Y. Sano, 1988 .

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

T. Egawa, H. Ishikawa, Yijun Sun, 2004 .

Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2005 .

Influence of Annealing Method on Microscopic One-to-One Correlation between Threshold Voltage of GaAs MESFET and Dislocation

T. Egawa, K. Kaminishi, Y. Sano, 1986 .

GaN-based optoelectronic devices on sapphire and Si substrates

M. Umeno, T. Egawa, H. Ishikawa, 2001 .

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

T. Egawa, Josephine Selvaraj, S. L. Selvaraj, 2009 .

Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

T. Egawa, P. Dalapati, S. Urata, 2020, Superlattices and Microstructures.

Role of 3C-SiC intermediate layers for III-nitride crystal growth on Si

T. Egawa, H. Fujimori, A. Watanabe, 2011 .

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

T. Tanaka, T. Egawa, D. Ueda, 2008, IEEE Journal of Quantum Electronics.

Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer

T. Egawa, M. Miyoshi, Hiroki Harada, 2021 .

Degradation mechanism of AlGaAs/GaAs laser diodes grown on Si substrates

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1995 .

Dynamic variation of carrier transport properties of recessed Au-free ohmic contacts to InAlN/AlN/GaN on Si-wafer

T. Egawa, T. Yoshida, 2018, Japanese Journal of Applied Physics.

AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics

T. Egawa, S. L. Selvaraj, Tsuneo Ito, 2007 .

Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

T. Egawa, H. Ishikawa, M. Miyoshi, 2006 .

High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films

T. Egawa, M. Miyoshi, Lei Li, 2017 .

Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

M. Umeno, T. Egawa, T. Jimbo, 1998 .

OPTICS 2409 High power mid-infrared interband cascade lasers based on type-II quantum wells

Takashi Jimbo, Rui Q. Yang, Fredrik Laurell, 1997 .

vi INFORMATION FOR CONTRIBUTORS ix GENERAL EDITORIAL POLICIES xi EDITORIAL: Submitting Electronic Graphics Files OPTICS 1 Technique for integration of vertical cavity lasers and resonant photodetectors

Babak Saif, Larry A. Coldren, Tetsuo Soga, 1998 .

Polarized Reflectance Spectroscopy and Spectroscopic Ellipsometry Determination of the Optical Anisotropy of Gallium nitride on Sapphire

M. Umeno, T. Egawa, T. Jimbo, 1997 .

Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2003 .

Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

T. Egawa, Y. Sugawara, Y. Ishikawa, 2020, CrystEngComm.

Demonstration of fully vertical GaN-on-Si Schottky diode

T. Egawa, T. Egawa, K. Zhang, 2017 .

High fT and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Akio Wakejima, T. Egawa, T. Egawa, 2015 .

Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

T. Egawa, T. Osada, K. Kasahara, 2020, Semiconductor Science and Technology.

Highly resistive GaN layers formed by ion implantation of Zn along the c axis

T. Egawa, T. Jimbo, N. Miura, 2003 .

Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

T. Egawa, T. Egawa, S. L. Selvaraj, 2011, IEEE Electron Device Letters.

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

Hiroyasu Ishikawa, S. Arulkumaran, T. Egawa, 2005 .

Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique

T. Egawa, M. Miyoshi, T. Kubo, 2017 .

Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

T. Egawa, T. Soga, M. Miyoshi, 2015 .

In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy

T. Egawa, K. Hiramatsu, Jiejun Wu, 2010 .

Suppression of the subband parasitic peak by 1nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes

Makoto Miyoshi, T. Egawa, Youhua Zhu, 2008 .

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates

Makoto Miyoshi, Takashi Egawa, Tomohiko Shibata, 2008 .

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Takashi Jimbo, Tetsuo Soga, Masayoshi Umeno, 1997 .

Al composition dependent properties of quaternary AlInGaN Schottky diodes

T. Egawa, Baijun Zhang, H. Ishikawa, 2006 .

Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

T. Egawa, T. Jimbo, H. Ishikawa, 2002 .

On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors

Lawrence Selvaraj, Hiroyasu Ishikawa, Takashi Egawa, 2006 .

Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire

Takashi Jimbo, Hiroyasu Ishikawa, S. Arulkumaran, 2003 .

High-power AlGaN/GaN dual-gate high electron mobility transistor mixers on SiC substrates

Toshihiko Kosugi, Naoteru Shigekawa, Hiroyasu Ishikawa, 2004 .

Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film

T. Egawa, M. Miyoshi, P. Dalapati, 2023, Vacuum.

Current-induced degradation behaviors of InGaN/GaN multiple-quantum-well UV photodetectors: Role of electrically active defects

T. Egawa, M. Henini, M. Miyoshi, 2022, Sensors and Actuators A: Physical.

Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate

T. Egawa, M. Miyoshi, P. Dalapati, 2021 .

InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer

Z. Hassan, T. Egawa, A. Ali, 2013 .

Effect of Various Interlayers on Epiwafer Bowing in AlGaN/GaN High-Electron-Mobility Transistor Structures

Hiroyasu Ishikawa, Takashi Egawa, Maosheng Hao, 2004 .

Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

T. Egawa, Y. Sakai, Z. Chen, 2010 .

Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

T. Egawa, Mitsuhiro Tanaka, M. Miyoshi, 2008 .

Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode

M. Umeno, T. Egawa, T. Jimbo, 1997 .

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

T. Egawa, T. Egawa, S. L. Selvaraj, 2009, IEEE Electron Device Letters.

Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon

T. Egawa, H. Ishikawa, S. Arulkumaran, 2004 .

Compositional instability in InAlN/GaN lattice-matched epitaxy

T. Egawa, F. Ponce, Ti Li, 2012 .

AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Y. Uemoto, M. Hikita, T. Tanaka, 2005, IEEE Transactions on Electron Devices.

Quantitative study of F center in high-surface-area anatase titania nanoparticles prepared by MOCVD

T. Egawa, Liang-ying Zhang, X. Yao, 2004 .

Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon

T. Egawa, S. L. Selvaraj, 2006 .

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

T. Egawa, Baijun Zhang, H. Ishikawa, 2004 .

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

T. Egawa, Shuxin Tan, S. L. Selvaraj, 2009 .

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

A. Wakejima, T. Egawa, T. Egawa, 2012, IEEE Electron Device Letters.

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

T. Egawa, S. L. Selvaraj, 2012 .

MOCVD Grown AlGaN/GaN Transistors on Si Substrate for High Power Device Applications

T. Egawa, S. L. Selvaraj, 2012 .

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

T. Egawa, S. L. Selvaraj, T. Kubo, 2011 .

Oxygen Plasma Treated Aluminum as a Gate Dielectric for AlGaN/GaN High Electron Mobility Transistors

T. Egawa, S. L. Selvaraj, 2009 .

AlN/AlGaN/GaN MIS-HEMTs with recessed source/drain Ohmic contact

T. Egawa, S. L. Selvaraj, Tsuneo Ito, 2008 .

Demonstration of AlGaN/GaN High Electron Mobility Transistors on a-Plane (1120) Sapphire

T. Egawa, S. L. Selvaraj, 2008 .

Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

T. Egawa, Baijun Zhang, H. Ishikawa, 2005 .

Three Growth-Temperature-Dependent Regions for Nitrogen Incorporation in GaNAs Grown by Chemical Beam Epitaxy

T. Egawa, H. Ishikawa, Yijun Sun, 2004 .

Growth and characterisation of InAs/InGaAs quantum dots like structure on GaAs/Si substrate by AP-MOCVD

T. Egawa, Z. I. Kazi, P. Thilakan, 2002 .

Effects of interfacial thin metal layer for high-performance Pt-Au-based Schottky contacts to AlGaN-GaN

T. Egawa, N. Miura, T. Ozeki, 2004, IEEE Transactions on Electron Devices.

Comparative Study on the Properties of GaNAs/GaAs Triple Quantum Wells Annealed by Different Methods

T. Egawa, H. Ishikawa, Yijun Sun, 2004 .

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

Takashi Jimbo, Hiroyasu Ishikawa, T. Egawa, 2002 .

Device Characteristics of Metalorganic Chemical Vapor Deposition-Grown InAlN/GaN High-Electron-Mobility Transistors on AlN/Sapphire Template

T. Egawa, Josephine Selvaraj, Mitsuhiro Tanaka, 2009 .

GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxy

Takashi Jimbo, Masayoshi Umeno, Takashi Egawa, 1996 .

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

Takashi Egawa, Joseph J. Freedsman, T. Egawa, 2016 .

Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma

G. Wang, M. Umeno, T. Egawa, 2000 .

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

T. Egawa, H. Ishikawa, O. Oda, 2004 .

Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

T. Egawa, T. Kubo, J. Freedsman, 2012 .

Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates

M. Umeno, T. Egawa, T. Jimbo, 1995 .

Effect of Collection Distance on the Lattice Structure of Anatase Titania Nanoparticles Prepared by Metalorganic Chemical Vapor Deposition

T. Egawa, Liang-ying Zhang, X. Yao, 2002 .

Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template

T. Egawa, T. Jimbo, Baijun Zhang, 2004 .

Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

T. Egawa, T. Jimbo, H. Ishikawa, 2003 .

Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

T. Egawa, T. Kubo, J. Freedsman, 2011 .

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

M. Umeno, T. Egawa, T. Jimbo, 2001 .

Influence of Growth Temperature on Quaternary AlInGaN Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition

Hiroyasu Ishikawa, Takashi Egawa, Baijun Zhang, 2004 .

Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

A. Uedono, T. Egawa, S. Ishibashi, 2021, Applied Physics Letters.

AlInN-based ultraviolet photodiode grown by metal organic chemical vapor deposition

Hao Jiang, T. Egawa, S. Senda, 2008 .

InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Takashi Jimbo, Hiroyasu Ishikawa, Takashi Egawa, 2002 .

Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template

T. Egawa, T. Jimbo, Y. Sakai, 2011 .

Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrate

S. Nozaki, M. Umeno, T. Egawa, 1990 .

Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition

T. Egawa, K. Fujita, Y. Sakai, 2012 .

Effect of metal-precursor gas ratios on AlInN/GaN structures for high efficiency ultraviolet photodiodes

T. Egawa, Y. Sakai, Pum Chian Khai, 2011 .

Improved performance of InAlN-based Schottky solar-blind photodiodes

T. Egawa, Y. Sakai, Z. Chen, 2009 .

Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate

T. Egawa, T. Jimbo, S. L. Selvaraj, 2010 .

Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors

Hiroyasu Ishikawa, Takashi Egawa, T. Egawa, 2005 .

Electrical characterization of Pt∕AlGaN∕GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors

T. Egawa, T. Shibata, Mitsuhiro Tanaka, 2007 .

Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO2 Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition

S. Nozaki, M. Umeno, T. Egawa, 1990 .

Isolated DC-DC Converter utilizing GaN power device for Automotive Application

T. Egawa, N. Matsui, H. Matsumori, 2019, 2019 IEEE Applied Power Electronics Conference and Exposition (APEC).

High-Mobility AlGaN/GaN Heterostructures Grown on Sapphire by Metal-Organic Chemical Vapor Deposition

M. Umeno, T. Egawa, T. Jimbo, 2000 .

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

T. Egawa, O. Oda, T. Shibata, 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Takashi Jimbo, Masayoshi Umeno, Osamu Oda, 2002 .

Correlation on GaN epilayer quality and strain in GaN-based LEDs grown on 4-in. Si(1 1 1) substrate

T. Egawa, H. Yin, Jing Huang, 2015 .

Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si

T. Egawa, Debaleen Biswas, Naoki Torii, 2019, Journal of Applied Physics.

Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces

N. Taoka, T. Egawa, M. Shimizu, 2019, Semiconductor Science and Technology.

Infrared Study on Graded Lattice Quality in Thin GaN Crystals Grown on Sapphire

T. Egawa, M. Cho, H. Yokoi, 2006 .

Mechanical properties of the GaN thin films deposited on sapphire substrate

M. Umeno, T. Egawa, T. Jimbo, 1998 .

Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high‐electron‐mobility transistor structures on a Si substrate

T. Egawa, A. Ubukata, Y. Yano, 2017 .

Fabrication of Flat End Mirror Etched by Focused Ion Beam for GaN-Based Blue-Green Laser Diode

Takashi Jimbo, Masayoshi Umeno, Hiroyasu Ishikawa, 1997 .

Growth of InGaN-based laser diode structure on silicon (111) substrate

T. Egawa, Youhua Zhu, B. Shuhaimi, 2009 .

Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN∕AlN∕GaN heterostructures grown on epitaxial AlN/sapphire templates

T. Egawa, H. Ishikawa, O. Oda, 2005 .