D. Ueda

D. Ueda, O. Ishikawa, J. Itoh, 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor

H. Matsuo, Y. Uemoto, M. Hikita, 2007, 2007 IEEE International Electron Devices Meeting.

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, IEEE Electron Device Letters.

GaN-based natural super junction diodes with multi-channel structures

H. Matsuo, Y. Uemoto, T. Tanaka, 2008, 2008 IEEE International Electron Devices Meeting.

AlGaN/GaN devices for future power switching systems

Y. Uemoto, M. Hikita, T. Tanaka, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

A Novel Thin Concentrator Photovoltaic With Microsolar Cells Directly Attached to a Lens Array

Ryutaro Futakuchi, Daisuke Ueda, Hidetoshi Ishida, 2014, IEEE Journal of Photovoltaics.

High-efficiency Thin and Compact Concentrator Photovoltaics using Micro-solar Cells with Via-holes Sandwiched between Thin Lens-array and Circuit Board

H. Ishida, D. Ueda, E. Fujii, 2013 .

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

H. Matsuo, Y. Uemoto, S. Nagai, 2007, 2007 IEEE International Electron Devices Meeting.

Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates

Daisuke Ueda, Yoshiharu Anda, Tetsuzo Ueda, 2010, 2010 International Electron Devices Meeting.

A new vertical double diffused MOSFET—The self-aligned terraced-gate MOSFET

D. Ueda, G. Kano, H. Takagi, 1984, IEEE Transactions on Electron Devices.

A GaAs MMIC chip-set for mobile communications using on-chip ferroelectric capacitors

T. Tanaka, D. Ueda, G. Kano, 1993, 1993 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

Present and future prospects of gan-based power electronics

Y. Uemoto, M. Hikita, T. Tanaka, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned process

D. Ueda, G. Kano, H. Takagi, 1987, IEEE Transactions on Electron Devices.

A New Vertical Sidewall Channel Power MOSFET with Rectangular Grooves

D. Ueda, G. Kano, A. Shimano, 1984 .

Degradation of InGaN‐based laser diodes due to increased non‐radiative recombination rate

T. Tanaka, D. Ueda, G. Meneghesso, 2010 .

Role of non-radiative recombination in the degradation of InGaN-based laser diodes

D. Ueda, M. Meneghini, G. Meneghesso, 2008, 2008 IEEE International Electron Devices Meeting.

NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

D. Ueda, N. Otsuka, Song-Hyok Choe, 2016 .

Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates

D. Ueda, J.S. Harris, J. Adkisson, 1988, IEEE Electron Device Letters.

Status Quo and trends of GaN power devices

D. Ueda, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Current status on GaN-based RF-power devices

D. Ueda, T. Ueda, Tsuyoshi Tanaka, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

Y. Uemoto, D. Ueda, M. Yanagihara, 2011 .

GaN Power Electron Devices

H. Ishida, Y. Uemoto, D. Ueda, 2011 .

GaN-based multi-junction diode with low reverse leakage current using P-type barrier controlling layer

H. Ishida, T. Murata, D. Ueda, 2011, 2011 International Electron Devices Meeting.

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

C. Dee, D. Ueda, Yueh-Chin Lin, 2022, Materials.

Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

D. Ueda, S. Nagai, N. Otsuka, 2014, 2014 IEEE International Electron Devices Meeting.

Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition

D. Ueda, E. Chang, Chun-Hsiung Lin, 2020 .

RECENT PROGRESS ON GaN-BASED ELECTRON DEVICES

H. Ishida, Y. Hirose, T. Murata, 2006 .

Recent Advances in GaN Power Switching Devices

Daisuke Ueda, Yoshiharu Anda, Tetsuzo Ueda, 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Integration Technologies for GaN Power Transistors

D. Ueda, T. Ueda, Tsuneo Tanaka, 2010 .

Status of GaN-Based Power Switching Devices

Y. Uemoto, D. Ueda, Kaoru Inoue, 2008 .

n++GaN Regrowth Technique Using Pico-Second Laser Ablation to Form Non-Alloy Ohmic Contacts

D. Ueda, R. Ferreyra, Asamira Suzuki, 2017, IEEE Electron Device Letters.

Surface Plasmon Resonant Vertical-Cavity Surface-Emitting Lasers

D. Ueda, T. Ueda, T. Onishi, 2009 .

Polarization Control of VCSEL Array by Metal Nanoholes at Rectangular Lattice Utilizing Surface Plasmon Resonance

D. Ueda, T. Ueda, T. Onishi, 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

Low threshold current 850nm surface plasmon VCSEL with sub-micron metal hole arrays

D. Ueda, T. Ueda, T. Onishi, 2006, 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.

Reliability study on bst capacitors for gaas mmic

D. Ueda, A. Noma, 1997 .

Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011 .

Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

Reliability evaluation for Blu-Ray laser diodes

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2010, Microelectron. Reliab..

Reliability analysis of InGaN Blu-Ray laser diode

Gaudenzio Meneghesso, Masaaki Yuri, Enrico Zanoni, 2009, Microelectron. Reliab..

Extensive Analysis of the Degradation of Blu-Ray Laser Diodes

G. Meneghesso, M. Meneghini, E. Zanoni, 2008, IEEE Electron Device Letters.

Recent advances in GaN transistors for future emerging applications

Daisuke Ueda, Tetsuzo Ueda, Manabu Yanagihara, 2009 .

Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes

G. Meneghesso, M. Meneghini, E. Zanoni, 2009, IEEE Transactions on Electron Devices.

GaN transistors on Si for switching and high-frequency applications

Daisuke Ueda, Tetsuzo Ueda, Masahiro Ishida, 2014 .

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

G. Meneghesso, M. Meneghini, E. Zanoni, 2012, IEEE Electron Device Letters.

Electron and hole-related luminescence processes in gate injection transistors

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2010 .

TdI10: Ferroelectric thin films in integrated microelectronic devices

James F. Scott, Gota Kano, D. Ueda, 1992 .

Mg-doped AlGaInP laser diodes with high characteristic temperature

K. Inoue, D. Ueda, K. Onozawa, 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

Implementation of GaAs Monolithic Microwave Integrated Circuits with On-Chip BST Capacitors

D. Ueda, 1999 .

Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique

Kaoru Inoue, Daisuke Ueda, Tetsuzo Ueda, 2007, IEICE Electron. Express.

Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors

D. Ueda, J.S. Harris, W.-S. Lee, 1989, IEEE Electron Device Letters.

Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates

T. Tanaka, T. Egawa, D. Ueda, 2008, IEEE Journal of Quantum Electronics.

Low-voltage operation GaAs spike-gate power FET with high power-added efficiency

Daisuke Ueda, Hiroshi Takenaka, Tetsuzo Ueda, 1997 .

A new vertical power MOSFET structure with extremely reduced on-resistance

H. Takagi, D. Ueda, G. Kano, 1985, IEEE Transactions on Electron Devices.

Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination

G. Meneghesso, M. Meneghini, E. Zanoni, 2009, IEEE Electron Device Letters.

A GaN-based surface-emitting laser with 45°-inclined mirror in horizontal cavity

Satoshi Tamura, Masaaki Yuri, Daisuke Ueda, 2008, SPIE OPTO.

Surface Plasmon VCSEL with Metal Nanohole Arrays

D. Ueda, T. Ueda, T. Onishi, 2007, LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings.

Polarization Control of Vertical-Cavity Surface-Emitting Lasers by Utilizing Surface Plasmon Resonance

D. Ueda, T. Ueda, T. Onishi, 2007, IEEE Journal of Quantum Electronics.

High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal

Masaaki Yuri, Daisuke Ueda, Tetsuzo Ueda, 2004 .

A MOS Image Sensor With a Digital-Microlens

D. Ueda, K. Onozawa, K. Yamanaka, 2008, IEEE Transactions on Electron Devices.

0.15 /spl mu/m T-shaped gate fabrication for GaAs MODFET using phase shift lithography

D. Ueda, D. Ueda, H. Takenaka, 1996 .

Effect of introducing optical blanking to GaN epitaxy by using pulsed laser deposition technology

D. Ueda, K. Kodama, 2019, 2019 Compound Semiconductor Week (CSW).

Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering

D. Ueda, Chih-Yi Yang, C. Lee, 2022, IEEE Transactions on Electron Devices.

A novel fabrication process of surface via-holes for GaAs power FETs

T. Tanaka, D. Ueda, H. Furukawa, 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

Dynamic Recording of 200 Gbytes in Three-Dimensional Optical Disk by a 405 nm Wavelength Picosecond Laser

Seiji Kobayashi, D. Ueda, H. Uchiyama, 2011 .

AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Y. Uemoto, M. Hikita, T. Tanaka, 2005, IEEE Transactions on Electron Devices.

A GaAs Bi-FET technology for large scale integration

D. Ueda, S. Katsu, D. Ueda, 1989, International Technical Digest on Electron Devices Meeting.

Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF3 Annealing

D. Ueda, M. Kawaguchi, S. Takigawa, 2009 .

Recent results on the physical origin of the degradation of GaN-based LEDs and lasers

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, OPTO.

Vertical InGaN‐based blue light emitting diode with plated metal base fabricated using laser lift‐off technique

D. Ueda, T. Ueda, S. Tamura, 2003 .

GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Daisuke Ueda, Masahiro Hikita, Tetsuzo Ueda, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems

S. Makioka, Daisuke Ueda, Y. Anda, 2001 .

A biomimetic strategy for designing easily-installable CPV tracking system with high wind resistivity

Ryutaro Futakuchi, Masaki Yamamoto, Kazuo Inoue, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

Satoshi Tamura, Daisuke Ueda, Yoshiharu Anda, 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

A low-current and low-distortion wideband amplifier using 0.2-/spl mu/m gate MODFET fabricated by using phase-shift lithography

H. Ishida, D. Ueda, H. Takenaka, 2000 .

A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs

H. Koizumi, T. Tanaka, D. Ueda, 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography

T. Tanaka, M. Nishitsuji, D. Ueda, 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

2.1GHz direct-conversion GaAs quadrature modulator IC for W-CDMA base station-Solid-State Circuits Conference, 1999. Digest of Technical Papers. ISSCC. 1999 IEEE International

J. Itoh, M. Nishitsuji, O. Ishikawa, 2004 .

Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

Y. Hirose, T. Murata, K. Inoue, 2005, IEEE Transactions on Electron Devices.

High-efficiency thin and compact concentrator photovoltaics using micro-solar cells with via-holes sandwiched between thin lens-array and circuit board

H. Ishida, D. Ueda, E. Fujii, 2013 .

Review of compound semiconductor devices for RF power applications

D. Ueda, D. Ueda, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

Properties and Advantages of Gallium Nitride

Daisuke Ueda, D. Ueda, 2017 .

GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300 degrees C

D. Ueda, M. Kazumura, M. Hagio, 1989 .

Single to two-phase matrix converter using GaN-based monolithic bidirectional switch for driving symmetrical two-phase motor

Toshimitsu Morizane, Daisuke Ueda, Yuji Kudoh, 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

High-field transport of hot electrons in strained Si/SiGe heterostructures

Daisuke Ueda, Kazuo Miyatsuji, Chihiro Hamaguchi, 1994 .

Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

G. Meneghesso, M. Meneghini, E. Zanoni, 2012, OPTO.

Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency

Gaudenzio Meneghesso, Enrico Zanoni, Daisuke Ueda, 2011, Microelectron. Reliab..

A lateral P-SI-N diode SPDT switch for Ka-band applications

D. Ueda, Y. Ota, K. Miyatsuji, 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).