R. Howell
发表
R. Young,
B. Wagner,
M. King,
2014
.
T. McNutt,
R. Howell,
C. Scozzie,
2009,
IEEE Electron Device Letters.
R. C. Clarke,
H. G. Henry,
M. King,
2014,
2014 IEEE International Electron Devices Meeting.
Josephine B. Chang,
R. Howell,
S. Afroz,
2020,
2020 IEEE/MTT-S International Microwave Symposium (IMS).
O. Prache,
M. Hatalis,
R. Howell,
1998,
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
T. McNutt,
R. Howell,
V. Veliadis,
2012
.
Josephine B. Chang,
M. Uren,
R. Howell,
2019,
IEEE Electron Device Letters.
Robert S. Howell,
Damian Urciuoli,
Harold Hearne,
2010
.
R. Howell,
T. Vasen,
Jizhong Li,
2022,
AIP Advances.
T. McNutt,
R. Howell,
V. Veliadis,
2012
.
T. McNutt,
R. Howell,
V. Veliadis,
2012,
IEEE Electron Device Letters.
R. Howell,
C. Scozzie,
V. Veliadis,
2012
.
M. Hatalis,
R. Howell,
S. Saha,
1999
.
Robert S. Howell,
Miltiadis K. Hatalis,
Mark Stewart,
1997,
Electronic Imaging.
Robert S. Howell,
Miltiadis K. Hatalis,
M. Hatalis,
2001
.
M. Hatalis,
R. Howell,
S. Saha,
1999
.
R. Young,
R. Howell,
H. Nathanson,
2010
.
Robert M. Young,
Robert S. Howell,
Pavel Borodulin,
2014,
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Robert M. Young,
Robert S. Howell,
Pavel Borodulin,
2013,
IEEE Electron Device Letters.
M. Hatalis,
R. Howell,
G. Sarcona,
2000
.
Robert M. Young,
Robert S. Howell,
Pavel Borodulin,
2014
.
Jordan Merkel,
Eric Stewart,
Josephine B. Chang,
2019,
IEEE Electron Device Letters.
M. Hatalis,
R. Howell,
S. Saha,
1998
.
Robert S. Howell,
Webster E. Howard,
Miltiadis K. Hatalis,
1999,
Electronic Imaging.
Robert M. Young,
Robert S. Howell,
Pavel Borodulin,
2013
.
Robert S. Howell,
Miltiadis K. Hatalis,
Mark Stewart,
1998,
Defense, Security, and Sensing.
C. Scozzie,
H. Hearne,
V. Veliadis,
2012,
IEEE Electron Device Letters.
Josephine B. Chang,
R. Howell,
T. Vasen,
2022,
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Josephine B. Chang,
R. Howell,
T. Vasen,
2021,
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
R. Singh,
A. Ezis,
R. C. Clarke,
2008,
IEEE Transactions on Electron Devices.