G. Bruguier

SEU critical charge and sensitive area in a submicron CMOS technology

C. Detcheverry, C. Dachs, E. Lorfèvre, 1997 .

Single particle-induced latchup

G. Bruguier, J.-M. Palau, G. Bruguier, 1996 .

Influence of parasitic transistors on the total dose hardness of MOS and MOS/SOI structures

F. Roy, G. Bruguier, J.-C. Boudenot, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

Radiation dose mapping using laser heated TLD plates

G. Bruguier, J. Gasiot, J. Fesquet, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method

G. Bruguier, J. Gasiot, J. Bonnet, 2003 .

Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

G. Bruguier, J. Gasiot, F. Saigné, 2005 .

Thin CaSO4:Dy for Beta Dosimetry, Grain Size and Energy Dependence

G. Bruguier, J. Gasiot, E. Luguera, 1990 .

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

J. Gasiot, G. Bruguier, J.-M. Palau, 1994 .

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Robert Ecoffet, J. Gasiot, C. Tavernier, 1999 .

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

J. Gasiot, G. Bruguier, J.-M. Palau, 1995 .

Single Particle-Induced Late

G. Bruguier, G. Bruguier, 1996 .