C. Caneau

S. Chandrasekhar, C. Caneau, P. Fay, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems

S. Chandrasekhar, C. Caneau, P. Fay, 1998, IEEE Photonics Technology Letters.

A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver

C. Caneau, P. Fay, I. Adesida, 1995, 1995 53rd Annual Device Research Conference Digest.

Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

W. Bonner, C. Zah, S. Menocal, 1991 .

Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates

E. Kapon, C. Caneau, D. Hwang, 1993 .

Quantum wire heterostructure for optoelectronic applications

E. Kapon, C. Caneau, D. Hwang, 1992 .

Wavelength conversion by quasi-phase-matched difference frequency generation in AlGaAs waveguides

S. J. B. Yoo, Rajaram Bhat, Catherine Caneau, 1995 .

Multi-wavelength light sources based on InP photonic integrated circuits for WDM lightwave communication systems

D. D. Mahoney, C. Zah, C. Caneau, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

C. Caneau, P. Fay, I. Adesida, 1996 .

Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition

C. Tu, C. Caneau, R. Bhat, 1998 .

In0.53Ga0.47As metal‐semiconductor‐metal photodetector using proton bombarded p‐type material

M. V. Rao, C. Caneau, H. Dietrich, 1991 .

Low threshold 1.5 mu m tensile-strained single quantum well lasers

C. Y. Chen, C. Zah, C. Caneau, 1991 .

OMVPE grown GalnAs: C for HBTs

C. Caneau, R. Bhat, M. Koza, 1996 .

1.5-µm compressive strained MQW 20-wavelength distributed-feedback laser arrays

Chung-En Zah, Rajaram Bhat, Catherine Caneau, 1992 .

High power and high temperature continuous-wave operation of distributed Bragg reflector quantum cascade lasers

C. Zah, C. Caneau, H. Leblanc, 2014 .

Wavelength tuning of sampled-grating DBR quantum cascade lasers

Ali Diba, C. Zah, C. Caneau, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Inverted gate GaAs MESFET by epitaxial liftoff

W. K. Chan, C. Caneau, T. Gmitter, 1992 .

Demonstration of a Polarisation Rotation Gate in GaAs/AlGaAs Multiquantum Well Waveguides

I. White, R. Penty, I. Day, 1992, Photonics in Switching.

Measurement of intrinsic dynamics of SOA using outband optical modulation

M. Hu, Xingsheng Liu, C. Zah, 2004 .

Measurement of Very Low Residual Reflections in Lensed-Fiber Pigtailed Semiconductor Optical Amplifier

M. Hu, Xingsheng Liu, C. Zah, 2005 .

The growth of GaInAs/InP and GaInAs/AlInAs superlattices with thin barrier layers by low pressure organometallic chemical vapor deposition

C. Caneau, D. Hwang, R. Bhat, 1991 .

High-speed quantum well and quantum dot lasers

Pallab Bhattacharya, Xiangkun Zhang, Catherine Caneau, 1998, Other Conferences.

Dependence of doping on substrate orientation for GaAs: C grown by OMVPE

C. Caneau, R. Bhat, M. Koza, 1992 .

Single-mode instability in standing-wave lasers: The quantum cascade laser as a self-pumped parametric oscillator

C. Zah, F. Capasso, C. Caneau, 2016, 1711.00187.

Wavelength precision of monolithic InP grating multiplexer/demultiplexers

C. Caneau, H. Leblanc, R. Bhat, 1994 .

160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor

C. Caneau, P. Fay, I. Adesida, 1996, 1996 54th Annual Device Research Conference Digest.

Etching of InP by HCl in an OMVPE reactor

C. Caneau, J. Hayes, R. Bhat, 1991 .

cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K

A. Srivastava, J. Zyskind, J. Sulhoff, 1986 .

Quasi-phasematched blue-green second-harmonic generation in ZnCdSe waveguides with patterned crystal orientation

S. Yoo, J. Furdyna, C. Caneau, 1999 .

Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements

C. Caneau, I. Adesida, R. Bhat, 1994 .

Noncritically Phase-matched Secondharmonic Generation In Periodically Domain-inverted AlGaas Waveguides

S. Yoo, C. Caneau, R. Bhat, 1997, CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics.

Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal‐semiconductor‐metal detectors

M. V. Rao, C. Caneau, N. Papanicolaou, 1996 .

Fe and Ti implants in In0.52Al0.48As

M. V. Rao, C. Caneau, P. Chi, 1993 .

Strained InGaAs/GaAs quantum wires: modeling and optical properties

E. Kapon, C. Caneau, D. Hwang, 1994, Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures

P. Bhattacharya, C. Caneau, R. Bhat, 1997 .

Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C

M. V. Rao, O. W. Holland, C. Caneau, 1992 .

Narrow-linewidth 1.3 mu m DFB-DCPBH lasers with lambda /4-shifted first-order gratings fabricated by electron beam lithography using a new fast resist

C. Zah, S. Menocal, C. Caneau, 1988 .

Tunable Optical Equalizer Using Diffraction Grating Filters

C. Chang-Hasnain, C. Zah, C. Caneau, 2008, IEEE Photonics Technology Letters.

Elaboration and metallurgical characterization of ZnTe : O crystals

C. Caneau, M. Valladon, M. Schneider, 1981 .

Photoluminescence and excitation spectra of OTe center in ZnTe:O

C. Caneau, J. Rommeluère, M. Schneider, 1981 .

Design and realization of a 1.55-/spl mu/m patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers

C. Caneau, Rajaram Bhat, Omar Qasaimeh, 1999 .

An all-epitaxial InP-based 1.55 /spl mu/m VCSEL process with defect-free Al/sub x/O/sub y//GaAs distributed Bragg reflector mirrors

P. Bhattacharya, C. Caneau, K. Kamath, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 /spl mu/m VCSELs

P. Bhattacharya, C. Caneau, K. Linder, 1997, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.

Reduction of zinc diffusion into the collector of InP‐based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition

C. Caneau, R. Bhat, S. Schwarz, 1994 .

A study of the growth rate of GaSb using TEGa and TMSb or TESb

C. Caneau, R. Bhat, 2015 .

High-speed tunnel-injection quantum well and quantum dot lasers

Xiangkun Zhang, Catherine Caneau, Pallab Bhattacharya, 1998, Photonics West.

Origin of the 1.3 eV Transition in InP/InAlAs/InP Heterostructure

C. Caneau, T. Benyattou, S. Monéger, 1995 .

Intersubband Optical Transitions in One Dimensional Quantum Wire Structures

A. Sa’ar, E. Kapon, C. Caneau, 1996 .

Simultaneous fast wavelength switching and intensity modulation using a tunable DBR laser

C. Caneau, J. B. Georges, H. Kobrinski, 1990, IEEE Photonics Technology Letters.

Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures

Rajaram Bhat, Catherine Caneau, W. J. Tomlinson, 1991 .

Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs

C. Caneau, W. Hong, J. Song, 1993 .

High-speed Ga0.51In0.49P/GaAs heterojunction phototransistors

C. Caneau, K. Ha, J. Song, 1995 .

Potentially high-performance carbon-doped GaInP/GaAs heterojunction bipolar transistors with different compositional base gradings

C. Caneau, W. Hong, J. Song, 1994 .

High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

C. Caneau, Patrick Fay, Ilesanmi Adesida, 2002 .

Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors

C. Caneau, R. Bhat, T. Brock, 1997, IEEE Photonics Technology Letters.

Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors

Ying Zhang, Catherine Caneau, J. F. Dorsten, 1994, Photonics West - Lasers and Applications in Science and Engineering.

Optically monitoring and controlling epitaxial growth

Rajaram Bhat, Catherine Caneau, M. A. Koza, 1992 .

Structural modification in reactive‐ion‐etched i‐InP and n+‐InP studied by Raman scattering

C. Caneau, D. Ballegeer, I. Adesida, 1993 .

Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector

C. Caneau, J. Hayes, M. Frei, 1992 .

Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowth

C. Caneau, J. Hayes, Y. Jeong, 1991 .

Selective OMVPE of GaInAs and InP using a polycrystalline InP mask

W. Bonner, C. Caneau, R. Bhat, 1991 .

Range statistics and Rutherford backscattering studies on Fe‐implanted In0.53Ga0.47As

M. V. Rao, O. W. Holland, C. Caneau, 1991 .

Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering

J. F. Dorsten, C. Caneau, I. Adesida, 1993 .

Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

C. Caneau, R. Bhat, C. Zah, 1990, IEEE Photonics Technology Letters.

Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors

C. Caneau, J. Hayes, R. Bhat, 1989 .

Simultaneous Planarized Selective-Area Epitaxy of Ga x In 1-x As in Normal and Dove-tail Etched Grooves

C. Caneau, M. Frei, D. Bimberg, 1993 .

Regrowth of In0.53Ga0.47As/InP p‐n heterojunctions by organometallic chemical vapor deposition

C. Caneau, J. Hayes, M. Frei, 1991 .

A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD

C. Zah, C. Caneau, A. Yi-yan, 1991 .

Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth

C. Caneau, J. Hayes, M. Koza, 1989 .

InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition

Rajaram Bhat, Catherine Caneau, M. A. Koza, 1996 .

Characterization of chemically assisted ion beam etching of InP

R. Grundbacher, Catherine Caneau, Roberto R. Panepucci, 1994 .

2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density

John Lehrer Zyskind, Catherine Caneau, A. G. Dentai, 1987 .

Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates

E. Kapon, C. Caneau, D. Hwang, 1994 .

InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates

L. M. Schiavone, E. Kapon, C. Caneau, 1993 .

Suppression of modal birefringence in InP-InGaAsP waveguides through use of compensated tensile strain

C. Caneau, H. Leblanc, I. Adesida, 1997, IEEE Photonics Technology Letters.

Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double-heterostructure lasers and lateral p - n junction arrays

Rajaram Bhat, S. G. Menocal, F. J. Favire, 1990 .

In situ definition of semiconductor structures by selective area growth and etching

Catherine Caneau, E. Colas, W. E. Quinn, 1991 .

Testing of high-power semiconductor laser bars

C. Caneau, R. Bhat, M.H. Hu, 2005, Journal of Lightwave Technology.

1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

C. Zah, A. Kasukawa, C. Caneau, 1992 .

1.5-µm GaInAsP angled-facet flared-waveguide traveling wave laser amplifiers

Chung-En Zah, Rajaram Bhat, S. G. Menocal, 1990 .

1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers

C. Caneau, R. Bhat, C. Zah, 1990, IEEE Photonics Technology Letters.

Ultracompact monolithic integration of balanced, polarization diversity photodetectors for coherent lightwave receivers

C. Caneau, L. Curtis, J.-I. Song, 1992, IEEE Photonics Technology Letters.

1.55-μm vertical-cavity surface-emitting lasers with directly grown AlGaAs/GaAs and AlxOy /GaAs DBR mirrors

Omar Qasaimeh, Catherine Caneau, Pallab Bhattacharya, 1999, Photonics West.

InP-based 1.5 /spl mu/m vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors

Rajaram Bhat, Catherine Caneau, Omar Qasaimeh, 1998 .

Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiers

Rajaram Bhat, Nicholas C. Andreadakis, F. J. Favire, 1992 .

Integrated optic mode‐size tapers by selective organometallic chemical vapor deposition of InGaAsP/InP

Nicholas C. Andreadakis, Catherine Caneau, Robert J. Deri, 1992 .

Selective area growth of InGaAsP by OMVPE

C. Caneau, R. Bhat, Moo-Sung Kim, 1992 .

Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets

C. Caneau, S. G. Menocal, T. P. Lee, 1987 .

Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers

S. Chandrasekhar, Patrick Fay, Catherine Caneau, 1997 .

1.5 μm asymmetric Fabry–Perot modulators with two distinct modulation and chirp characteristics

S. J. B. Yoo, Catherine Caneau, M. A. Koza, 1998 .

Short‐period gratings for long‐wavelength optical devices

C. Caneau, I. Adesida, T. Brock, 1989 .

High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range

John Lehrer Zyskind, C. Caneau, M. A. Pollack, 1986 .

High efficiency long wavelength VCSEL on InP grown by MOCVD

Catherine Caneau, Nobuhiko Nishiyama, Chung-En Zah, 2003 .

Ultra-high Spontaneous Emission Quantum Efficiency, 99.7% Internally And 72% Externally, From AlGaAs/GaAs/AlGaAs Double Heterostructures

Eli Yablonovitch, Catherine Caneau, I. Schnitzer, 1992, LEOS '92 Conference Proceedings.

Thermal management strategies for high power semiconductor pump lasers

Chung-En Zah, Xingsheng Liu, R. Bhat, 2006, The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems (IEEE Cat. No.04CH37543).

Growth and characterization of defect-free GaAs/AlAs distributed Bragg reflector mirrors on patterned InP-based heterostructures

P. Bhattacharya, C. Caneau, R. Bhat, 1998 .

InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess

C. Caneau, R. Bhat, A. Ketterson, 1992, IEEE Electron Device Letters.

A 94 km, 11 Gb/s NRZ TRANSMISSION EXPERIMENT USING A 1540 nm DFB LASER WITH AN OPTICAL AMPLIFIER AND A PIN/HEMT RECEIVER

C. Zah, S. Menocal, C. Caneau, 1989 .

Accessing the large quasicontinuous tuning range of a three-section DBR laser

M. P. Vecchi, S. G. Menocal, Catherine Caneau, 1990 .

Compact quantum cascade laser based atmospheric CO2 sensor

C. Zah, C. Caneau, F. Xie, 2011, CLEO: 2011 - Laser Science to Photonic Applications.

Selective in situ etching of GaInAsP for improved growth interfaces

C. Caneau, J. Hayes, R. Bhat, 1990 .