I. Balslev

发表

From belt picking to bin packing

Ivar Balslev, Rene Dencker Eriksen, R. D. Eriksen, 2002, International Symposium on Optomechatronic Technologies.

The Metal‐Insulator Transition in Electron‐Hole Systems

I. Balslev, 1980 .

Interband piezo-birefringence in germanium

I. Balslev, S. Riskaer, 1966 .

Filter for continuous averaging

I. Balslev, E. Hougs, 1974 .

PHOTOLUMINESCENCE OF GERMANIUM NEAR THE SCREENING IONIZATION LIMIT OF EXCITONS

I. Balslev, 1985 .

Picosecond coherent light scattering in the exciton-biexciton resonance of CdSe

I. Balslev, J. Hvam, C. Dörnfeld, 1988 .

Optical Nonlinearity and Phase Coherence of Exciton-Biexciton Transition in CdSe

I. Balslev, J. Hvam, B. Hönerlage, 1987 .

A shortcut to band renormalization in semiconductors with a finite temperature plasma

I. Balslev, A. Stahl, 1986 .

Spectroscopic search for the free carrier screening of the excitonic binding

I. Balslev, 1980 .

The metal-insulator transition in stressed germanium

I. Balslev, J. Furneaux, 1979 .

The role of biexcitons in induced absorption and the dynamical Stark effect

I. Balslev, E. Hanamura, 1989 .

Linear and Nonlinear Optics of Confined Excitons

I. Balslev, 1989 .

Terahertz pulses from semiconductor-air interfaces

I. Balslev, J. Hvam, S. Keiding, 1992 .

Exchange Interaction between Excitons in the Quasi-Cubic Model

I. Balslev, T. Skettrup, 1970 .

Evolution of the electronic state of a semiconductor in a subpicosecond excitation-probe experiment

I. Balslev, A. Stahl, 1988 .

Transverse and longitudinal relaxations of excitons and biexcitons in CdSe

I. Balslev, J. Hvam, C. Dörnfeld, 1987 .

Recombination via two-dimensional excitons in GaAs-(AlGa)As heterojunctions

I. Balslev, 1987 .

Polarisation effects of the dynamical Stark effect of excitons in quantum wells

I. Balslev, A. Stahl, J. Schlosser, 1990 .

Induced Absorption and the Dynamical Stark Shift Associated with Biexcitons

I. Balslev, 1990 .

Coherent Nonlinear Edge Dynamics in Semiconductor Quantum Wells

I. Balslev, A. Stahl, 1989 .

Coherent Nonlinear Response of Excitons in Semiconductors

I. Balslev, A. Stahl, 1988 .

On the optical stark effect of excitons in semiconductors

I. Balslev, A. Stahl, 1988 .

Real-Space Properties of Transition Dipole Matrix Elements in Semiconductors

I. Balslev, G. Czajkowski, 1985 .

Nature of Coherent Four-Wave Mixing Beats in Semiconductors

I. Balslev, J. Hvam, J. Erland, 1994 .

Indirect absorption in Ge under combined static and oscillatory stress

I. Balslev, 1967 .

Polariton Theory in Electron—Hole Configuration Space. Bulk Solution for a Wannier-Type Model

I. Balslev, A. Stahl, 1982 .

Momentum Representation of Hydrogenic Ground States Derived from Complicated Band Extrema

O. Christensen, I. Balslev, 1972 .

Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

I. Balslev, I. Balslev, 1966 .

Exciton diffusion and motion of electron-hole drops in Ge

I. Balslev, J. Hvam, 1975 .

The splitting of the 1s excitons in silicon

I. Balslev, 1977 .

Drift of Electron–Hole Drops in Exciton Density Gradients

I. Balslev, J. Hvam, 1974 .

Exciton polaritons at surfaces of GaAs

I. Balslev, 1981 .

Chapter 5 Piezooptical Effects

I. Balslev, 1972 .

Apparatus for Combined Static and Dynamic Uniaxial Stress

I. Balslev, 1967 .

Direct edge piezo-reflectance in Ge and GaAs

I. Balslev, 1967 .

Boundary Conditions in Case of Spatial Resonance Dispersion

I. Balslev, T. Skettrup, 1971 .

Effect of Uniaxial Stress and Doping on the One-Phonon Raman Spectrum of GaP

I. Balslev, 1974, January 1.

Coupling between photons and exciton polaritons across surfaces of direct-gap semiconductors

I. Balslev, 1981 .

Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium Arsenide

I. Balslev, 1968 .

Electroluminescence and current oscillations in ZnO single crystals excited by short pulses

I. Balslev, N. I. Meyer, M. H. Jørgensen, 1965 .

Training Space Truncation in Vision-Based Recognition

René Dencker Eriksen, Ivar Balslev, R. D. Eriksen, 2001, IWVF.

3D scanning of object surfaces using structured light and a single camera image

René Dencker Eriksen, Ivar Balslev, Volker Krüger, 2011, 2011 IEEE International Conference on Automation Science and Engineering.

Splitting near a surface of the n = 2 exciton level

I. Balslev, 1983 .

An Automatic Evaluation Procedure for 3-D Scanners in Robotics Applications

N. Kruger, B. Moller, I. Balslev, 2013, IEEE Sensors Journal.

Optical response of saddle point excitons

I. Balslev, 1984 .

On the interpretation of the observed hole mass shift with Uniaxial stress in silicon

I. Balslev, I. Balslev, P. Lawaetz, 1965 .

Electrodynamics of the Semiconductor Band Edge

Ivar Balslev, Arne Stahl, I. Balslev, 1987 .

Inter-Valence-Band Transitions in Uniaxially Stressed Ge and GaAs

I. Balslev, 1969 .

The influence of high uniaxial stress on the indirect absorption edge in silicon

I. Balslev, 1965 .

The Excitonic Surface Potential in Semiconductors

I. Balslev, 1978 .

Luminescence from compressed electron-hole plasma in germanium

I. Balslev, 1978 .

The Mott transition in cold semiconductors

I. Balslev, 1978 .

Spatial instability in simple reaction schemes.

I. Balslev, H. Degn, H Degn, 1975, Journal of theoretical biology.

Excitonic reflectance of GaAs crystals cleaved in liquid helium

I. Balslev, L. Schultheis, 1983 .