R. Bigwood

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

M. Hussein, C. Kenyon, Z. Ma, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V

M. Hussein, C. Kenyon, E. Lee, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 /spl mu/m/sup 2/ SRAM cell

P. Bai, C. Auth, V. Chikarmane, 2002, Digest. International Electron Devices Meeting,.

A simple matrix model of intramolecular vibrational redistribution and its implications

M. Gruebele, R. Bigwood, 1995 .

Molecular vibrational energy flow: Beyond the Golden Rule

M. Gruebele, R. Bigwood, 1998 .

The ground state vibrational structure of SCCl2:: observation of backbone IVR

M. Gruebele, R. Bigwood, B. A. Milam, 1998 .

Freezing molecular vibrational energy flow with coherent control

M. Gruebele, R. Bigwood, 2002 .

The vibrational energy flow transition in organic molecules: theory meets experiment.

P. Wolynes, M. Gruebele, D. Leitner, 1998, Proceedings of the National Academy of Sciences of the United States of America.

Shifted-update rotation: simple integration of the many-level Schrödinger equation to long times

M. Gruebele, R. Bigwood, 1995 .

Direct print EUV patterning of tight pitch metal layers for Intel 18A process technology node

K. Fischer, R. Bigwood, N. Moumen, 2022, Photomask Technology.