B. Crew

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

M. Hussein, C. Kenyon, Z. Ma, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V

M. Hussein, C. Kenyon, E. Lee, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).