J. Shih

发表

A Novel 2-Bit/Cell p-Channel Logic Programmable Cell With Pure 90-nm CMOS Technology

Y. King, C. Lin, Chia-En Huang, 2008, IEEE Electron Device Letters.

Study of junction degradation and lifetime assessment in FinFETs

J. Shih, K. Joshi, P. Liao, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Anomalous Reduction of Hot-Carrier-Induced On-Resistance Degradation in n-Type DEMOS Transistors

J. Shih, J.F. Chen, S. Hsu, 2006, IEEE Transactions on Device and Materials Reliability.

Investigation of monotonous increase in saturation-region drain current during hot carrier stress in N-type Lateral Diffused MOSFET with STI

J. Shih, Y. Lee, Yu-hui Huang, 2010, 2010 IEEE International Reliability Physics Symposium.

An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors

J. Shih, K. Wu, J.F. Chen, 2009, IEEE Transactions on Device and Materials Reliability.

Understanding of hot-carrier-injection induced IDLIN kink effect in sub-100nm HV NLDMOS

J. Shih, K. Wu, D. J. Wu, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

A New Phenomenon of Retention Time Evolution in Embedded DRAM Technology with High-K Dielectrics (Ta2O5) MIM Capacitor After HTOL Test

R. F. Tsui, H. W. Chin, J. Shih, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

An analytical model of positive HBM ESD current distribution and the modified multi-finger protection structure

Huey-Liang Hwang, Yi-Hsun Wu, Boon-Khim Liew, 1999, Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394).

The Impact of Ball-Bonding Induced Voltage Transient on Sub-90nm CMOS Technology

J.R. Shih, J. Wang, Chin-Hsin Tang, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

Y. Chih, Y. King, C. Lin, 2021, Advanced Functional Materials.

Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

Y. Chih, Y. King, C. Lin, 2022, Nanoscale Research Letters.

A new ESD model induced yield loss during chip-on-film package process and it's failure mechanism

J. Shih, Yu-hui Huang, Kenneth Wu, 2011, 2011 International Reliability Physics Symposium.

A comprehensive breakdown model describing temperature dependent activation energy of low-к/extreme low-к dielectric TDDB

C. Chiu, J. Shih, K. Wu, 2010, 2010 International Electron Devices Meeting.

A junction leakage mechanism and its effects on advance SRAM failure

J. H. Lee, S. C. Chen, J. Shih, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Statistical modeling for postcycling data retention of split-gate flash memories

J. Shih, K. Wu, Ya-chin King, 2004, IEEE Transactions on Device and Materials Reliability.

The effect of CF/sub 4/ plasma on the device parameters and reliability properties of 0.18 /spl mu/m MOSFETs

C. Chiu, J. Shih, L. Chu, 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).

Instability trade-off of inter-layer or inter-metal dielectrics formation with low-k dielectrics on active and field device's characteristics

J. Shih, K. F. Yu, M. J. Chen, 2001, 2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538).

Multifunctional Ion-Sensitive Floating Gate Fin Field-Effect Transistor with Three-Dimensional Nanoseaweed Structure by Glancing Angle Deposition Technology.

Y. Chih, Y. King, C. Lin, 2021, Small.

The physical mechanism investigation of AC TDDB behavior in advanced gate stack

S. C. Chen, C. L. Chen, J. Shih, 2014, 2014 IEEE International Reliability Physics Symposium.

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology

Y. Chih, Y. King, C. Lin, 2021, Nanoscale Research Letters.

Polarity and Patterning Effect on Plasma Charging Levels by Metal-Gate Coupled Recorder Arrays

Y. King, C. Lin, J. Shih, 2022, IEEE Transactions on Electron Devices.

Plasma Charge Accumulative Model in Quantitative FinFET Plasma Damage

Y. King, C. Lin, J. Shih, 2019, IEEE Transactions on Electron Devices.

An Investigation of Plasma Charging Effect on FinFET Front-End-of-Line Processes

Y. King, C. Lin, J. Shih, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

7nm FinFET Plasma Charge Recording Device

Y. King, C. Lin, J. Shih, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Frequency dependence of NBTI in high-k/metal-gate technology

K. Wu, Y.-H Lee, W. Wang, 2014, 2014 IEEE International Reliability Physics Symposium.

Mechanisms of Hot-Carrier-Induced Threshold-Voltage Shift in High-Voltage p-Type LDMOS Transistors

Kuo-Ming Wu, J.R. Shih, J.F. Chen, 2009, IEEE Transactions on Electron Devices.

Self-heating effect in FinFETs and its impact on devices reliability characterization

K. Wu, Y.-H Lee, S. E. Liu, 2014, 2014 IEEE International Reliability Physics Symposium.

New TDDB lifetime model for AC inverter-like stress in advance FinFET structure

C. L. Chen, Y.-H. Lee, J. R. Shih, 2015, 2015 IEEE International Reliability Physics Symposium.

Multilevel Fully Logic-Compatible Latch Array for Computing-in-Memory

Y. Chih, Y. King, C. Lin, 2023, IEEE Transactions on Electron Devices.

Investigation of electromigration properties and plasma charging damages for plasma treatment process in Cu interconnects

J. T. Yue, J. R. Shih, R.C.J. Wang, 2002, 7th International Symposium on Plasma- and Process-Induced Damage.

Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm

Kenneth Wu, J. R. Shih, J. Shih, 2009, IEEE International Reliability Physics Symposium.

Re-investigation of gate oxide breakdown on logic circuit reliability

W. Wang, Y.C. Huang, T.Y. Yew, 2011, 2011 International Reliability Physics Symposium.

On-Wafer FinFET-Based EUV/eBeam Detector Arrays for Advanced Lithography Processes

Y. King, C. Lin, J. Shih, 2020, IEEE Transactions on Electron Devices.

Prediction of NBTI degradation for circuit under AC operation

R. Ranjan, J.R. Shih, Y.S. Tsai, 2010, 2010 IEEE International Reliability Physics Symposium.

A reliable TDDB lifetime Projection model for advanced gate stack

K. Wu, Y.-H Lee, J. R. Shih, 2013, 2013 IEEE International Integrated Reliability Workshop Final Report.

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Y. King, C. Lin, J. Shih, 2021, Nanoscale Research Letters.