T. Boscke

Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

T. Boscke, J. Muller, D. Brauhaus, 2011, 2011 International Electron Devices Meeting.

Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Sergei V. Kalinin, S. Kalinin, T. Mikolajick, 2013, 2013 IEEE International Electron Devices Meeting.

Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

R. Hoffmann, T. Mikolajick, L. Frey, 2012, IEEE Electron Device Letters.

Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

P. Kirsch, S. Kudelka, J. Heitmann, 2006, 2006 International Electron Devices Meeting.

Fully Ion Implanted and Coactivated Industrial n-Type Cells With 20.5% Efficiency

D. Kania, A. Grohe, M. Weis, 2014, IEEE Journal of Photovoltaics.

Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

S. Kudelka, W. Krautschneider, T. Boscke, 2006, 2006 European Solid-State Device Research Conference.

Bifacial n-type cells with >20% front-side efficiency for industrial production

T. Boscke, D. Kania, A. Grohe, 2013, Photovoltaic Specialists Conference.

Fully screen-printed PERC cells with laser-fired contacts — An industrial cell concept with 19.5% efficiency

T. Boscke, A. Grohe, T. Roth, 2011, 2011 37th IEEE Photovoltaic Specialists Conference.