H. Kawasaki

10 K-gate GaAs JFET sea of gates

H. Kawasaki, M. Wada, Y. Hida, 1991 .

Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition

M. Yoshimi, H. Kawasaki, T. Nakanisi, 1981 .

Modulation-Doped In_ Al_ P/GaAs Field-Effect Transistors : Semiconductors and Semiconductor Devices

Miyoko O. Watanabe, H. Kawasaki, Y. Ohba, 1988 .

Buried p-gate heterojunction field effect transistor

H. Kawasaki, S. Wada, I. Hase, 1999 .

Integration of multi-level copper metallization into a high performance sub-0.25 /spl mu/m CMOS technology

T. Lii, M. Angyal, H. Kawasaki, 1998, Proceedings of the 1998 Second IEEE International Caracas Conference on Devices, Circuits and Systems. ICCDCS 98. On the 70th Anniversary of the MOSFET and 50th of the BJT. (Cat. No.98TH8350).

Super low noise AlGaAs/GaAs HEMT with one tenth micron gate

T. Shino, Hisao Kawasaki, K. Kamei, 1989, IEEE MTT-S International Microwave Symposium Digest.

Low-frequency dispersion of transconductance in GaAs JFETs and MESFETs with an ion-implanted channel layer

H. Kawasaki, J. Kasahara, 1990 .