N. Yokoyama

N. Yokoyama, T. Mori, S. Muto, 1991, [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode

N. Yokoyama, S. Muto, Y. Nakata, 2003 .

Hard x-ray photoemission study of oxidation states of Ti underlayer in Fe/Ti film system

A. Kawabata, M. Nihei, N. Yokoyama, 2017 .

Increasing the current density of dielectric-base transistors with an MgO emitter-base barrier

N. Yokoyama, T. Hato, A. Yoshida, 1994, IEEE Transactions on Applied Superconductivity.

Current on‐off operation of graphene transistor with dual gates and He ion irradiated channel

N. Yokoyama, K. Tsukagoshi, Song-Lin Li, 2013 .

MBE growth of lattice-matched metal/semiconductor structures

N. Yokoyama, T. Mori, S. Muto, 1995 .

Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

N. Yokoyama, A. Nakajima, T. Futatsugi, 1999 .

Resonant-tunneling hot electron transistor (RHET)

Naoki Yokoyama, Akihiro Shibatomi, Shunichi Muto, 1988 .

Characterization of GaAs/AlGaAs hot electron transistors using magnetic field effects on launched-electron transport

S. Hiyamizu, N. Yokoyama, S. Muto, 1986 .

Subpicosecond base transit time observed in a hot-electron transistor (HET)

S. Hiyamizu, N. Yokoyama, S. Muto, 1985 .

Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots

N. Yokoyama, S. Tarucha, Y. Nakata, 2004 .

Electron tunneling time between double quantusm dot

N. Yokoyama, A. Tackeuchi, Y. Nakata, 2001 .

Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum Dots

N. Yokoyama, S. Muto, Y. Nakata, 1998 .

Optical control of charge number in single floating quantum-dot gate in field-effect transistor structure

Y. Awano, N. Yokoyama, Y. Sugiyama, 2001 .

Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell

Y. Awano, N. Yokoyama, Y. Sugiyama, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Three-terminal field effect superconducting device using SrTiO/sub 3/ channel

N. Yokoyama, T. Hato, A. Yoshida, 1995, IEEE Transactions on Applied Superconductivity.

Resonant tunneling hot‐electron transistor with current gain of 5

N. Yokoyama, H. Ohnishi, T. Mori, 1986 .

V.2 – Resonant-Tunneling Hot-Electron Transistors

N. Yokoyama, T. Mori, S. Muto, 1992 .

Modeling and operating characteristics of InGaAs-based resonant-tunneling hot electron transistors (RHETs)

N. Yokoyama, H. Ohnishi, A. Shibatomi, 1988, Technical Digest., International Electron Devices Meeting.

New algorithm simulation for mesoscopic electron wave devices employing high mobility 2D electron gas

N. Yokoyama, M. Takatsu, T. Usuki, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser

N. Yokoyama, M. Tonouchi, Y. Fujiwara, 2022, Applied Physics Express.

Wafer-scale fabrication of transistors using CVD-grown graphene and its application to inverter circuit

N. Yokoyama, K. Tsukagoshi, D. Kondo, 2014 .

MP-A4 GaAs MOSFET for low-power high-speed logic applications

K. Suyama, T. Mimura, N. Yokoyama, 1979, IEEE Transactions on Electron Devices.

Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling

N. Yokoyama, S. Muto, Y. Nakata, 2002 .

Effects of InAs coverage on the Ga diffusion into InAs Self-Assembled Quantum Dots on GaAs(100)

N. Yokoyama, S. Muto, Y. Nakata, 2001 .

Crystallographic Properties of Closely Stacked InAs Quantum Dots Investigated by Ion Channeling.

N. Yokoyama, S. Muto, Y. Nakata, 1999 .

Spectral hole burning of InAs self-assembled quantum dots written by two different lasers

N. Yokoyama, S. Muto, Y. Nakata, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Y. Awano, N. Yokoyama, T. Sekiguchi, 1998 .

Interdiffusion between InAs Quantum Dots and GaAs Matrices.

N. Yokoyama, S. Muto, Y. Nakata, 1997 .

Electron transport properties in InAs self-assembled quantum dot HEMTs

N. Horiguchi, N. Yokoyama, Y. Nakata, 1995, Proceedings of International Electron Devices Meeting.

Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)

N. Yokoyama, Y. Sakuma, M. Takeguchi, 2005 .

Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots.

N. Yokoyama, S. Tarucha, Y. Nakata, 2004, Physical review letters.

Development of Electrically Driven Single-Quantum-Dot Device at Optical Fiber Bands

S. Iwamoto, Y. Arakawa, N. Yokoyama, 2006, Japanese Journal of Applied Physics.

TEM observation of threading dislocations in InAs self-assembled quantum dot structure

N. Yokoyama, S. Muto, Y. Nakata, 1999 .

Characteristics of spectral-hole burning of InAs self-assembled quantum dots

N. Yokoyama, S. Muto, Y. Nakata, 1998 .

Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots buried in pn-junction

N. Horiguchi, Y. Awano, N. Yokoyama, 1998 .

Magneto-photoluminescence study of quantum dots formed on tetrahedral-shaped recesses

Y. Awano, N. Yokoyama, K. Uchida, 1998 .

Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1998 .

Fabrication of smooth surface on liquid phase epitaxially grown Y1Ba2Cu3O7-δ Films by mechanical polishing

N. Yokoyama, Y. Ishimaru, Furen Wang, 1999 .

Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

Naoki Yokoyama, Tatsuya Usuki, Kazuya Takemoto, 2005 .

Anisotropic graphene growth accompanied by step bunching on a dynamic copper surface

N. Yokoyama, Shintaro Sato, Kenjiro Hayashi, 2013, Nanotechnology.

Nuclear Magnetic Resonance of V in PdV and Sc in PdSc and PtSc –Experiment and Theory–

N. Yokoyama, K. Terakura, K. Asayama, 1974 .

Electronic structure of Si1-yCy and Si1-x-yGexCy alloys with low C concentrations

Y. Awano, N. Yokoyama, M. Ohfuti, 2001 .

Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111)B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy

N. Yokoyama, S. Muto, Y. Sugiyama, 1995 .

A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation

N. Yokoyama, H. Nishi, H. Kawata, 1984, IEEE Transactions on Electron Devices.

MICROSTRUCTURE AND OPTICAL ABSORPTION PROPERTIES OF SI NANOCRYSTALS FABRICATED WITH LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

Naoki Yokoyama, Yoshihiro Sugita, Anri Nakajima, 1996 .

Formation of Sn nanocrystals in thin SiO2 film using low-energy ion implantation

N. Horiguchi, N. Yokoyama, A. Nakajima, 1997 .

Patterned self‐assembly of one‐dimensional arsenic particle arrays in GaAs by controlled precipitation

N. Horiguchi, N. Yokoyama, O. Ueda, 1996 .

NMR of Non-Transition Impurities in Transition Metals and Alloys

N. Yokoyama, Yoshihiro Yamada, K. Asayama, 1974 .

Deep trap measurement on S+‐implanted layers in GaAs

N. Yokoyama, H. Ishikawa, T. Furuya, 1976 .

Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1996 .

Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties

N. Yokoyama, H. Ishikawa, S. Ohkawa, 1975 .

Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

S. Nakaharai, N. Yokoyama, S. Suzuki, 2012, 2012 International Electron Devices Meeting.

Gate-Controlled P–I–N Junction Switching Device with Graphene Nanoribbon

N. Yokoyama, K. Tsukagoshi, Song-Lin Li, 2011, 1111.6142.

Laterally coupled self-assembled InAs quantum dots embedded in resonant tunnel diode with multigate electrodes

N. Yokoyama, S. Tarucha, Y. Nakata, 2008 .

Observation of interdot tunneling process of spin-polarized electrons

N. Yokoyama, A. Tackeuchi, Y. Nakata, 2001 .

Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1997 .

Characterization of WSix/GaAs Schottky contacts

N. Yokoyama, S. Suzuki, T. Ohnishi, 1983 .

Transport properties of a single pair of coupled self-assembled InAs quantum dots

N. Yokoyama, S. Tarucha, Y. Nakata, 2003 .

A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

Naoki Yokoyama, Hidetoshi Nishi, Satoshi Hiyamizu, 1985 .

Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

A. Kawabata, M. Nihei, N. Yokoyama, 2011 .

Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors

Naoki Yokoyama, Akihiro Shibatomi, N. Yokoyama, 1983 .

Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO2 layers formed via low energy ion implantation

Naoto Horiguchi, Naoki Yokoyama, Tatsuya Usuki, 1998 .

Low-temperature catalyst activator: mechanism of dense carbon nanotube forest growth studied using synchrotron radiation

T. Matsushita, A. Kawabata, M. Nihei, 2014, IUCrJ.

Transmission Experiment of Quantum Keys over 50 km Using High-Performance Quantum-Dot Single-Photon Source at 1.5 µm Wavelength

Y. Arakawa, N. Yokoyama, A. Tomita, 2010, Applied Physics Express.

Single-photon generator for optical telecommunication wavelength

Y. Arakawa, N. Yokoyama, Y. Sakuma, 2006 .

Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots

Yoshiaki Nakata, Naoki Yokoyama, Tatsuya Usuki, 2005 .

Characterization of the interface region in VPE GaAs

Naoki Yokoyama, Akihiro Shibatomi, Hideaki Ishikawa, 1975 .

A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD

N. Yokoyama, T. Ohnishi, K. Nakai, 1984 .

Experimental study of the orientation effect of GaAs MESFETs fabricated on

N. Yokoyama, T. Futatsugi, H. Nishi, 1989 .

Planar GaAs MOSFET integrated logic

N. Yokoyama, T. Mimura, M. Fukuta, 1980, IEEE Transactions on Electron Devices.

121 GHz resonant-tunnelling hot electron transistors having new collector barrier structure

N. Yokoyama, T. Mori, S. Muto, 1991 .

Pulsed-jet epitaxy : application to device processes

N. Yokoyama, H. Shigematsu, S. Muto, 1994 .

A solution to the surface arsenic stoichiometric problem at the GaAs(001) growth surface in atomic layer expitaxy

N. Yokoyama, S. Muto, K. Nakajima, 1994 .

Self‐consistent analysis of resonant tunneling current

Naoki Yokoyama, Shunichi Muto, Tsuguo Inata, 1986 .

Selective graphene formation on copper twin crystals.

N. Yokoyama, Shintaro Sato, C. Kaneta, 2012, Journal of the American Chemical Society.

A GaAs 1K static RAM using tungsten-silicide gate self alignment technology

H. Ishikawa, T. Shinoki, A. Shibatomi, 1983, 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

Quantum functional devices for advanced electronics

Motomu Takatsu, Naoki Yokoyama, Shunichi Muto, 1996 .

Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe

Takuo Ohkochi, Motonobu Sato, Naoki Yokoyama, 2013 .

A Resonant-Tunneling Bipolar Transistor (RBT) –A New Functional Device with High Current Gain

N. Yokoyama, S. Muto, T. Futatsugi, 1987 .

InGaAs/InAlGaAs hot-electron transistors with current gain of 15

S. Hiyamizu, T. Fujii, N. Yokoyama, 1986 .

Coupling between one-dimensional states in a quantum point contact and an electron waveguide

R. Kiehl, N. Yokoyama, Tatsuya Usuki, 1994 .

Edge-Type Junction with Ito Barrier

N. Yokoyama, Y. Ishimaru, T. Hato, 1999 .

Angular distribution of electrons injected through a quantum point contact

N. Yokoyama, M. Takatsu, K. Kosemura, 1991 .

DIELECTRIC-BASE TRANSISTORS WITH DOPED CHANNEL

N. Yokoyama, C. Yoshida, T. Hato, 1997 .

Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3μm

Yasuhiko Arakawa, Toshiyuki Miyazawa, Naoki Yokoyama, 2008 .

Self-organized quantum dots and quantum dot lasers (invited)

Hajime Shoji, Mitsuru Sugawara, Kohki Mukai, 1998 .

Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots

N. Yokoyama, A. Tackeuchi, Y. Nakata, 2003 .

Dynamics of carrier tunneling between vertically aligned double quantum dots

N. Yokoyama, A. Tackeuchi, Y. Nakata, 2000 .

Monte Carlo simulation of electron transport in a graphene diode with a linear energy band dispersion

Y. Awano, N. Yokoyama, N. Harada, 2011 .

Spectroscopic Analysis of Graphitization and Grain Orientation of Carbon Films Grown by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

M. Nihei, N. Yokoyama, S. Ogawa, 2013 .

Monte Carlo simulation of electron transport efficiency of an InGaAs/InP hot-electron transistor

N. Yokoyama, H. Ohnishi, H. Nishi, 1985, IEEE Electron Device Letters.

An effect of size fluctuation on photoluminescence peak width of closely stacked InAs self-assembled quantum dot structures

N. Yokoyama, Y. Sugiyama, M. Takatsu, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes

Naoki Harada, Motonobu Sato, Naoki Yokoyama, 2010 .

Conduction tuning of graphene based on defect-induced localization.

N. Yokoyama, K. Tsukagoshi, Song-Lin Li, 2013, ACS nano.

Emitter Junction Analysis for a Dielectric-Base Transistors

T. Imamura, S. Hasuo, N. Yokoyama, 1993 .

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3 μm

Kohki Mukai, Yoshiaki Nakata, Naoki Yokoyama, 2000 .

Growth of Dense, Vertical and Horizontal Graphene and Its Thermal Properties

A. Kawabata, M. Nihei, N. Yokoyama, 2013 .

Selective synthesis of carbon nanotubes and multi-layer graphene by controlling catalyst thickness

M. Nihei, Y. Awano, N. Yokoyama, 2011 .

TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's

M. Abe, N. Yokoyama, K. Odani, 1982, IEEE Transactions on Electron Devices.

Passivating chemical vapor deposited graphene with metal oxides for transfer and transistor fabrication processes

N. Yokoyama, Shintaro Sato, Kenjiro Hayashi, 2013 .

Synthesis of Few-Layer and Multi-Layer Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transferring Processes

M. Nihei, N. Yokoyama, D. Kondo, 2009 .

Improved thermal conductivity by vertical graphene contact formation for thermal TSV

A. Kawabata, T. Murakami, M. Nihei, 2012, 2012 International Electron Devices Meeting.

CNT/graphene technologies for future carbon-based interconnects

A. Kawabata, T. Murakami, M. Nihei, 2012, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology.

Temperature dependent lasing characteristics of multi-stacked quantum dot lasers

Hiroshi Ishikawa, Hajime Shoji, Mitsuru Sugawara, 1997 .

1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

H. Ishikawa, K. Otsubo, N. Yokoyama, 2000, IEEE Journal of Quantum Electronics.

Electric Field Effect in LaTiO3/SrTiO3 Heterostructure

N. Fujimaki, N. Yokoyama, H. Tamura, 1996 .

A multigigahertz Josephson-semiconductor interface circuit using 77-K differential monolithic HEMT amplifier and 4.2-K JJ high-voltage driver for superconductor-semiconductor electronic hybrid systems

Y. Awano, N. Yokoyama, N. Harada, 2000, IEEE Journal of Solid-State Circuits.

Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski–Krastanow mode

N. Yokoyama, S. Muto, Y. Nakata, 1999 .

Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski–Krastanow mode of molecular beam epitaxy

N. Yokoyama, S. Muto, Y. Nakata, 1998 .

Influence of non-linear effects on very short pMOSFET device performances

Y. Awano, N. Yokoyama, P. Houlet, 1999 .

Intercalated multi-layer graphene grown by CVD for LSI interconnects

N. Yokoyama, D. Kondo, Shintaro Sato, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Sub-10-nm-wide intercalated multi-layer graphene interconnects with low resistivity

N. Yokoyama, D. Kondo, Shintaro Sato, 2014, IEEE International Interconnect Technology Conference.

Intercalated multilayer graphene wires and metal/multilayer graphene hybrid wires obtained by annealing sputtered amorphous carbon

M. Nihei, N. Yokoyama, Shintaro Sato, 2013 .

Dependence of Field-Effect Mobility of Graphene Grown by Thermal Chemical Vapor Deposition on Its Grain Size

N. Yokoyama, N. Harada, Shintaro Sato, 2013 .

Long Length, High-Density Carbon Nanotube Film Grown by Slope Control of Temperature Profile for Applications in Heat Dissipation

A. Kawabata, M. Nihei, N. Yokoyama, 2013 .

Evaluation of thermal resistance of carbon nanotube film fabricated using an improved slope control of temperature profile growth

A. Kawabata, M. Nihei, K. Yamabe, 2015 .

Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots

O. Wada, N. Yokoyama, A. Tackeuchi, 1995 .

Few-electron molecular states and their transitions in a single InAs quantum dot molecule.

N. Yokoyama, S. Tarucha, Y. Nakata, 2005, Physical review letters.

Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

Yoshiaki Nakata, Naoki Yokoyama, Yoshihiro Sugiyama, 1997 .

First Demonstration of Electrically Driven 1.55 µm Single-Photon Generator

Yasuhiko Arakawa, Toshiyuki Miyazawa, Naoki Yokoyama, 2007 .

SFQ-to-level logic conversion by HTS Josephson drivers for output interface

K. Tanabe, Y. Tarutani, N. Yokoyama, 2003 .

High-transconductance self aligned GaAs MESFET using implantation through an AlN layer

N. Yokoyama, H. Nishi, H. Kawata, 1984 .

Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method

N. Yokoyama, T. Ohnishi, H. Nishi, 1985 .

Application of the lamp-annealing method to the n+-layer of WSix-gate self-aligned GaAs MESFET's

N. Yokoyama, T. Inada, T. Ohnishi, 1984, IEEE Electron Device Letters.

Sub-GHz operation of single-photon emitting diode at 1.55 μm

Yasuhiko Arakawa, Toshiyuki Miyazawa, Naoki Yokoyama, 2009, OPTO.

Carbon nanotube via interconnect technologies: size‐classified catalyst nanoparticles and low‐resistance ohmic contact formation

Naoki Yokoyama, Shintaro Sato, Akio Kawabata, 2006 .

Resonant tunneling bipolar transistors using InAlAs/InGaAs heterostructures

N. Yokoyama, S. Muto, T. Futatsugi, 1989 .

First-principles study on the origin of band-gap reduction in Si-lattice matched Si 1-x-y Ge x C y

Y. Awano, N. Yokoyama, M. Ohfuti, 1999 .

Large-Area Synthesis of Graphene by Chemical Vapor Deposition and Transfer-Free Fabrication of Field-Effect Transistors

N. Yokoyama, D. Kondo, N. Harada, 2011 .

Electric Field Effect in LaTiO_{3}/SrTiO_{3} Heterostructure

N. Fujimaki, N. Yokoyama, H. Tamura, 1995 .

A GaAs 16x16 bit parallel multiplier

H. Shimizu, H. Ishikawa, K. Suyama, 1983, IEEE Journal of Solid-State Circuits.

Integration of multilayer graphene wires onto tungsten plugs for carbon/metal hybrid interconnects

M. Nihei, N. Yokoyama, Shintaro Sato, 2014 .

High-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon

M. Nihei, N. Yokoyama, Shintaro Sato, 2013 .

GaAs MOSFET High-Speed Logic

K. Suyama, T. Mimura, N. Yokoyama, 1980 .

Plasma-Grown Oxide Gate GaAs Deep Depletion MOS FET

T. Mimura, N. Yokoyama, M. Fukuta, 1977 .

A 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Naoki Yokoyama, Kohki Hikosaka, 1999 .