H. Horikawa

发表

Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy

Y. Ogawa, M. Sakuta, H. Horikawa, 1988 .

Low-drive-voltage MQW electroabsorption modulator for optical short-pulse generation

S. Oshiba, H. Horikawa, K. Nakamura, 1998 .

Electroabsorption modulator with PINIP structure

H. Horikawa, K. Nakamura, K. Yamada, 1998 .

High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers on p‐type GaAs substrates

H. Horikawa, T. Kamijoh, Y. Sin, 1992 .

InGaAs-GaAs-InGaP Distributed Bragg Reflector Buried Heterostructure Strained Quantum Well Lasers

H. Horikawa, Y. Sin, 1995 .

High power 0.98 mu m InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers

H. Horikawa, Y. Sin, 1993 .

Doping characteristics of n-type InP using phenylsilane and TBP by MOVPE

H. Horikawa, Yamauchi Yoshinori, 1998 .

High power output, low threshold, inner stripe GaInAsP laser diode on a p‐type InP substrate

K. Imanaka, H. Horikawa, Masaaki Sakuta, 1984 .

Interfacial layers of InP/Si heteroepitaxy

M. Sakuta, H. Horikawa, Y. Kawai, 1990 .

High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures on p‐InP substrates

Yoh Ogawa, H. Horikawa, Yasuhiro Matsui, 1989 .

Narrow linewidth (85 kHz) operation in long cavity 1.5 mu m-MQW DBR laser

Takeshi Kamijoh, H. Horikawa, Yasuhiro Matsui, 1991 .

GaInAsP grown on Si by MOVPE using GaAs/InP double buffer layers

M. Sakuta, H. Horikawa, Y. Kawai, 1990 .

1.55 mu m DFB lasers with Fe-doped InP current blocking layers grown by two-step MOVPE

Yoh Ogawa, H. Horikawa, Yasuhiro Matsui, 1989 .

Hetero-epitaxial growth of InP on Si substrates by LP-MOVPE

M. Sakuta, H. Horikawa, Y. Kawai, 1988 .

Ultralow laser threshold and high speed InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers for optical interconnects

T. Kamijoh, H. Horikawa, Y. K. Sin, 1993 .

Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Takeshi Kamijoh, Chang-Qing Xu, M. Joma, 1993 .

Semiconductor pump laser technology

H. Horikawa, A. Ishii, 1993 .

High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

H. Horikawa, I. Matsuyama, T. Kamijoh, 1992 .

High‐power 1.48 μm multiple quantum well lasers with strained quaternary wells entirely grown by metalorganic vapor phase epitaxy

Y. Matsui, H. Horikawa, T. Kamijoh, 1991 .

Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW

H. Horikawa, Y. Sin, 1995 .