M. Micovic

发表

Temperature and modulation characteristics of resonant-cavity light-emitting diodes

E. Schubert, N. Hunt, R. Malik, 1996 .

GaN/AlGaN high electron mobility transistors with f τ of 110 GHz

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz

P. Janke, T. Hussain, A. Kurdoghlian, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs

D. Pavlidis, J. Moon, S. Hsu, 2002, 2002 32nd European Microwave Conference.

The state-of-the-art of GaAs and InP power devices and amplifiers

M. Micovic, C. Nguyen, 2001 .

W-Band GaN MMIC with 842 mW output power at 88 GHz

P. Kangaslahti, A. Fung, L. Samoska, 2010, 2010 IEEE MTT-S International Microwave Symposium.

GaN double heterojunction field effect transistor for microwave and millimeterwave power applications

A. Kurdoghlian, W.-S. Wong, A. Schmitz, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Keisuke Shinohara, Thomas C. Oh, Miroslav Micovic, 2013, IEEE Transactions on Electron Devices.

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

Broadband GaN DHFET Traveling Wave Amplifiers with up to 120 GHz Bandwidth

Miroslav Micovic, Helen Fung, M. Micovic, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

High frequency GaN HEMTs for RF MMIC applications

D. Santos, F. Herrault, A. Schmitz, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

W-band, 5W solid-state power amplifier/combiner

Miroslav Micovic, Kyu Y. Han, M. Micovic, 2010, 2010 IEEE MTT-S International Microwave Symposium.

GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range

Adele E. Schmitz, David H. Chow, A. Kurdoghlian, 2008 .

GaN HFET for W-band Power Applications

A. Kurdoghlian, A. Schmitz, R. Bowen, 2006, 2006 International Electron Devices Meeting.

A high-performance 85-119 GHz GCPW MMIC low noise amplifier

Ming Hu, M. Micovic, V. Radisic, 2000, 2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096).

High performance MMICs with submillimeter wave InP-based HEMTs

M. Micovic, L. Samoska, V. Radisic, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

SUBMILLIMETER WAVE InP-BASED HEMTs with fmax over 600 GHz

M. Micovic, M. Case, C. Nguyen, 1999 .

Electrical characterisation of short gate In/sub 0.60/Ga/sub 0.40/As-In/sub 0.36/Al/sub 0.64/As/sub 0.84/Sb/sub 0.16/ high electron mobility transistors on InP substrate

M. Micovic, P. Janke, C. Nguyen, 2000 .

Ultra Broadband Low Power MMIC Amplifier

Sander Weinreb, Mehran Matloubian, Vesna Radisic, 2000, 2000 30th European Microwave Conference.

Optical pressure sensors based on semiconductor quantum wells

M. Micovic, W. Trzeciakowski, P. Perlin, 1992 .

High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers

J. Moon, M. Micovic, P. Hashimoto, 2006, 2006 International Electron Devices Meeting.

Dark Current Reduction in Near Infrared P-I-N Detector Diodes Fabricated from In .75 Ga .25 As Grown by Molecular Beam Epitaxy on InP Substrates

T. Mayer, M. Micovic, S. Nelson, 1996 .

GaN Technology for E, W and G-Band Applications

H. P. Moyer, A. Fung, A. Margomenos, 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band

M. Micovic, E. Prophet, A. Kurdoghlian, 2017, IEEE Electron Device Letters.

70–105 GHz wideband GaN power amplifiers

M. Micovic, K. Shinohara, D. Chow, 2012, 2012 7th European Microwave Integrated Circuit Conference.

GaN HFET digital circuit technology for harsh environments

D. McLaughlin, Adele E. Schmitz, David H. Chow, 2003 .

Highly Efficient Light-Emitting Diodes with Microcavities

E. Schubert, N. Hunt, R. Malik, 1994, Science.

Quantum well lasers with carbon doped cladding layers grown by solid source molecular beam epitaxy

G. Taylor, R. Malik, M. Micovic, 1994 .

Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

M. Micovic, K. Shinohara, P. Hashimoto, 2011, IEEE Transactions on Electron Devices.

GaN HFET technology for RF applications

J. Moon, M. Micovic, P. Janke, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

D. Wong, M. Micovic, P. Hashimoto, 2005, IEEE Electron Device Letters.

10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge

J. Moon, M. Micovic, P. Hashimoto, 2007, 2007 65th Annual Device Research Conference.

Wafer-level packaging method incorporating embedded thermal management for GaN-based RF front-ends

M. Micovic, K. Shinohara, E. Prophet, 2014, Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management

M. Micovic, K. Shinohara, D. Chow, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Accurate thermal analysis of GaN HFETs

P. Asbeck, J. Moon, M. Micovic, 2008 .

Failure Mechanisms in GaN HFETs under Accelerated RF Stress

M. Micovic, P. Hashimoto, A. Conway, 2007 .

Reliability Characteristics and Mechanisms of HRL’s T3 GaN Technology

M. Micovic, R. Bowen, David F. Brown, 2017, IEEE Transactions on Semiconductor Manufacturing.

Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

S. Nozaki, M. Micovic, E. Weber, 2001 .

Iodine-assisted molecular beam epitaxy

M. Micovic, A. Springthorpe, W. Cai, 1997 .

The effect of pressure on the luminescence from GaAs/AlGaAs quantum wells

J. Muszalski, M. Micovic, W. Trzeciakowski, 1994 .

Doping limits of C, Be, and Si in GaAs grown by solid source molecular‐beam epitaxy with a thermally cracked As2 source

T. D. Harris, R. Malik, M. Micovic, 1992 .

Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide

M. Micovic, W. Cai, D. Miller, 1998 .

Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy

R. Malik, M. Micovic, M. Geva, 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

Lattice constant of AlAs

M. Micovic, M. Leszczynski, P. Ciepielewski, 1992 .

Accelerated RF life Testing of Gan Hfets

M. Chen, M. Micovic, P. Hashimoto, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy

T. Mayer, M. Micovic, S. Lord, 1999 .

Electronic properties of Si δ-doped GaAs quantum wells

M. Micovic, F. Plentz, L. Scolfaro, 1992 .

Properties and applications of carbon-doped GaAs and AlxGa1-xAs layers grown by MBE with a pyrolytic graphite filament

W. D. Braddock, R. Kopf, R. Malik, 1993 .

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

Keisuke Shinohara, Andrea Corrion, Miroslav Micovic, 2015, IEEE Electron Device Letters.

High-Speed AlN/GaN MOS-HFETs With Scaled ALD {Al}_{2}{O}_{3} Gate Insulators

M. Micovic, K. Shinohara, P. Hashimoto, 2011 .

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

C. McGuire, D. Wong, M. Micovic, 2008, IEEE Electron Device Letters.

Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

Karim S. Boutros, Miroslav Micovic, D. Wong, 2010 .

MBE growth of near-infrared InGaAs photodetectors with carbon tetrabromide as a p-type dopant

T. Mayer, M. Micovic, D.L. Miller, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

GaN enhancement/depletion-mode FET logic for mixed signal applications

Adele E. Schmitz, David H. Chow, Miroslav Micovic, 2005 .

Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG

A. Schmitz, K. Shinohara, M. Micovic, 2012, 2012 International Electron Devices Meeting.

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

M. Micovic, K. Shinohara, A. Schmitz, 2017, IEEE Electron Device Letters.

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f T / f max of 454/444 GHz

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2015 .

220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic

A. Fung, D. Wheeler, P. J. Willadsen, 2010, 2010 International Electron Devices Meeting.

Self-Aligned AlGaN/GaN FinFETs

M. Micovic, David F. Brown, D. Regan, 2017, IEEE Electron Device Letters.

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

A. Schmitz, K. Shinohara, M. Micovic, 2011, 2011 International Electron Devices Meeting.

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

P. M. Asbeck, P. J. Willadsen, A. Schmitz, 2011, IEEE Electron Device Letters.

Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

M. Micovic, K. Shinohara, P. Hashimoto, 2010, 68th Device Research Conference.

Wideband AlGaN/GaN HEMT MMIC low noise amplifier

G. A. Ellis, Jeong-Sun Moon, A. Kurdoghlian, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

A. Schmitz, K. Shinohara, M. Micovic, 2013, IEEE Electron Device Letters.

High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

M. Micovic, K. Shinohara, R. Chu, 2013, IEEE Electron Device Letters.

Linearity of low microwave noise AlGaN/GaN HEMTs

J. Moon, M. Micovic, W. Wong, 2002 .

Iodine use in solid‐source III–V molecular‐beam epitaxy

M. Micovic, A. Springthorpe, R. Streater, 1996 .

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

P. Janke, A. Kurdoghlian, W.-S. Wong, 2002, IEEE Electron Device Letters.

GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE

J. Moon, M. Micovic, W. Wong, 2001 .

AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

P. Janke, Jeong-Sun Moon, Chanh Nguyen, 2001 .

High efficiency X-band class-E GaN MMIC high-power amplifiers

H. Moyer, C. McGuire, D. Wong, 2012, 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications.

Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology

Florian Herrault, Adele Schmitz, Eric Prophet, 2016, 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

A. Kurdoghlian, K. Shinohara, M. Micovic, 2011, 2011 International Electron Devices Meeting.

First demonstration of broadband W-band and D-band GaN MMICs for next generation communication systems

Hasan Sharifi, Miroslav Micovic, M. Micovic, 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS).

Molecular beam epitaxy of highly mismatched In0.73Ga0.27As on InP for near-infrared photodetectors

T. Mayer, M. Micovic, W. Hwang, 1997 .

GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density >6 W/mm

P. Janke, Jeong-Sun Moon, Chanh Nguyen, 2001 .

Next generation HEMTs

M. Micovic, P. Janke, C. Nguyen, 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).

92–96 GHz GaN power amplifiers

A. Margomenos, A. Kurdoghlian, P. J. Willadsen, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

GaN MMIC technology for microwave and millimeter-wave applications

A. Kurdoghlian, W.-S. Wong, A. Schmitz, 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

Integrated HFETs and HFET lasers utilizing carbon doping

G. Taylor, R. Malik, M. Micovic, 1996, IEEE Photonics Technology Letters.