S. Engelmann

发表

Systematic studies on reactive ion etch-induced deformations of organic underlayers

Yayi Wei, Markus Brink, Sebastian Engelmann, 2011, Advanced Lithography.

Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm

E. Joseph, G. Cohen, Y. Zhang, 2010, 2010 Symposium on VLSI Technology.

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

G. Cohen, L. Sekaric, T. Barwicz, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Novel, High-Throughput, Fiber-to-Chip Assembly Employing Only Off-the-Shelf Components

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2017, 2017 IEEE 67th Electronic Components and Technology Conference (ECTC).

Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication.

Chi-Chun Liu, Hsinyu Tsai, Sarunya Bangsaruntip, 2014, ACS nano.

Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond

I. Lauer, R. L. Bruce, K. Balakrishnan, 2013, 2013 IEEE International Electron Devices Meeting.

Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials

S. Engelmann, Erica Iacob, Gottlieb S. Oehrlein, 2006 .

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

N. Fuller, S. Engelmann, R. Bruce, 2011 .

Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing

S. Engelmann, R. Bruce, T. Lin, 2009 .

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

S. Engelmann, R. Bruce, D. Graves, 2009 .

Dependence of Polymer Surface Roughening Rate on Deposited Energy Density During Plasma Processing

S. Engelmann, R. Bruce, D. Graves, 2009 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposures. II. Plasma parameter trends for photoresist degradation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Enabling large-scale deployment of photonics through cost-efficient and scalable packaging

Tymon Barwicz, Swetha Kamlapurkar, Yves Martin, 2015, 2015 IEEE 12th International Conference on Group IV Photonics (GFP).

Advances in Interfacing Optical Fibers to Nanophotonic Waveguides Via Mechanically Compliant Polymer Waveguides

T. Barwicz, S. Engelmann, S. Kamlapurkar, 2020, IEEE Journal of Selected Topics in Quantum Electronics.

Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching

E. Joseph, M. Nakamura, S. Engelmann, 2015 .

Subtractive W contact and local interconnect co-integration (CLIC)

Michael A. Guillorn, Eric A. Joseph, Sebastian U. Engelmann, 2013, 2013 IEEE International Interconnect Technology Conference - IITC.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

Chen Li, E. Joseph, S. Engelmann, 2017, The Journal of chemical physics.

SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

V. Jain, B. Zetterlund, D. L. Harame, 2013, 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Atomic Layer Etching

S. Engelmann, 2016 .

The effects of vacuum ultraviolet radiation on low-k dielectric films

Sebastian Engelmann, Qinghuang Lin, Nicholas C. M. Fuller, 2012 .

Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation

G. A. Antonelli, Y. Nishi, N. Fuller, 2010 .

Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources

Josephine B. Chang, M. Engel, E. Joseph, 2016 .

Effects of ultraviolet and vacuum ultraviolet synchrotron radiation on organic underlayers to modulate line-edge roughness of fine-pitch poly-silicon patterns

M. Guillorn, N. Fuller, S. Engelmann, 2017 .

He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching

S. Engelmann, R. Bruce, G. Oehrlein, 2016 .

Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2008 .

Advanced Etch Technology for Nanopatterning VI

Sebastian Engelmann, Rich Wise, S. Engelmann, 2016 .

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, 2016 .

Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks

E. Joseph, S. Engelmann, N. Marchack, 2017 .

Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2010 .

Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕Ar discharges and energetic ion beams

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2007 .

Toward High-Yield 3D Self-Alignment of Flip-Chip Assemblies via Solder Surface Tension

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2016, 2016 IEEE 66th Electronic Components and Technology Conference (ECTC).

Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Improving high aspect ratio processes for logic applications through gas chemistry and plasma discharge optimization

Robert L. Bruce, Sebastian Engelmann, Takefumi Suzuki, 2015 .

Evaluation of ALE processes for patterning

Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, 2016, SPIE Advanced Lithography.

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Robert L. Bruce, Sebastian Engelmann, Sandra C. Hernández, 2015 .

Plasma-surface interactions of advanced photoresists with C4F8∕Ar discharges: Plasma parameter dependencies

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Sub-Micron Bondline-Shape Control in Automated Assembly of Photonic Devices

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2016, 2016 IEEE 66th Electronic Components and Technology Conference (ECTC).

Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer

Robert L. Bruce, Sebastian Engelmann, Hirokazu Matsumoto, 2017 .

Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations

Kevin K. H. Chan, J. Bruley, P. Hashemi, 2016 .

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

E. Joseph, S. Engelmann, R. Bruce, 2020 .

Electron beam generated plasmas: Characteristics and etching of silicon nitride

E. Joseph, S. Engelmann, H. Miyazoe, 2017 .

Flip chip assembly with sub-micron 3D re-alignment via solder surface tension

Tymon Barwicz, Swetha Kamlapurkar, Yves Martin, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

The 2021 release of the Quantemol database (QDB) of plasma chemistries and reactions

J. Tennyson, S. Engelmann, Christian Hill, 2022, Plasma Sources Science & Technology.

Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation

S. Engelmann, C. Willson, R. Bruce, 2007 .

Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors

E. Joseph, S. Engelmann, R. Bruce, 2018, Journal of Vacuum Science & Technology A.

Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning

M. Rasch, W. Haensch, V. Narayanan, 2021, IEEE Electron Device Letters.

Experimental realization of deep-subwavelength confinement in dielectric optical resonators

Sebastian Engelmann, Rafael Salas-Montiel, Sharon M. Weiss, 2017, Science Advances.

A Novel Approach to Photonic Packaging Leveraging Existing High-Throughput Microelectronic Facilities

Tymon Barwicz, Swetha Kamlapurkar, Yves Martin, 2016, IEEE Journal of Selected Topics in Quantum Electronics.

Control of sidewall roughness formation in through-silicon via etch at non-cryogenic temperatures

S. Engelmann, N. Marchack, R. Bruce, 2022, Advanced Lithography.

Plasma processing for advanced microelectronics beyond CMOS

D. Farmer, S. Engelmann, H. Miyazoe, 2021, Journal of Applied Physics.

Highly selective dry etching of polystyrene-poly(methyl methacrylate) block copolymer by gas pulsing carbon monoxide-based plasmas

E. Joseph, S. Engelmann, H. Miyazoe, 2017 .

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

C. Cabral, C. Lavoie, J. Newbury, 2013, IEEE Electron Device Letters.

Application of cyclic fluorocarbon/argon discharges to device patterning

E. Joseph, Yu Zhu, S. Engelmann, 2016 .

An integrated silicon photonics technology for O-band datacom

J. C. Rosenberg, W. M. J. Green, C. Xiong, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Automated, high-throughput photonic packaging

Tymon Barwicz, Swetha Kamlapurkar, Alexander Janta-Polczynski, 2018 .

Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist

E. Joseph, S. Engelmann, R. Bruce, 2020 .

Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits

S. Engelmann, N. Marchack, B. Walusiak, 2019, Plasma Processes and Polymers.

Investigation of plasma etch damage to porous oxycarbosilane ultra low-k dielectric

S. Engelmann, R. Bruce, M. Darnon, 2013 .

Atomic Precision Processing of New Materials for Frontier Microelectronic Applications in High Performance Computing and Artificial Intelligence

Yevgeny Raitses, Sebastian Engelmann, Jonathan Menard, 2020, 2009.03109.

Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping

Josephine B. Chang, E. Joseph, W. Haensch, 2009 .

Integrated Metamaterial Interfaces for Self-Aligned Fiber-to-Chip Coupling in Volume Manufacturing

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2019, IEEE Journal of Selected Topics in Quantum Electronics.

A silicon metamaterial chip-to-chip coupler for photonic flip-chip applications

Tymon Barwicz, Swetha Kamlapurkar, Yves Martin, 2017, 2017 Optical Fiber Communications Conference and Exhibition (OFC).

A metamaterial converter centered at 1490nm for interfacing standard fibers to nanophotonic waveguides

Paul Fortier, Tymon Barwicz, Swetha Kamlapurkar, 2016, 2016 Optical Fiber Communications Conference and Exhibition (OFC).

Assembly of mechanically compliant interfaces between optical fibers and nanophotonic chips

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2014, 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).

Towards co-packaging of photonics and microelectronics in existing manufacturing facilities

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2018, OPTO.

High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process

T. Ando, V. Narayanan, E. Leobandung, 2017, 2017 Symposium on VLSI Technology.

Control of surface oxide formation in plasma-enhanced quasiatomic layer etching of tantalum nitride

S. Engelmann, N. Marchack, M. Hopstaken, 2020 .

Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

J. A. Ott, A. Pyzyna, C.-H. Lin, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications

Kevin K. H. Chan, V. Narayanan, J. Bruley, 2017, 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths

T. Ando, V. Narayanan, E. Leobandung, 2016, 2016 IEEE Symposium on VLSI Technology.

Automated, self-aligned assembly of 12 fibers per nanophotonic chip with standard microelectronics assembly tooling

Tymon Barwicz, Swetha Kamlapurkar, Sebastian Engelmann, 2015, 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Dopant-Segregation Technique for Leakage Reduction and Performance Improvement in Trigate Transistors Without Raised Source/Drain Epitaxy

Josephine B. Chang, M. Khater, M. Guillorn, 2014, IEEE Electron Device Letters.

Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication.

Joy Y. Cheng, E. Joseph, J. Pitera, 2014, ACS nano.

Localization and quantification of trace-gas fugitive emissions using a portable optical spectrometer

Tymon Barwicz, Swetha Kamlapurkar, Laurent Schares, 2018, Defense + Security.

Pattern transfer of directed self-assembly patterns for CMOS device applications

Sebastian Engelmann, Joy Cheng, Michael A. Guillorn, 2013 .

Advanced plasma etch for the 10nm node and beyond

Robert L. Bruce, Sebastian Engelmann, M. Nakamura, 2013, Advanced Lithography.

Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly

Sebastian Engelmann, Joy Cheng, Michael A. Guillorn, 2012 .

Experimental realization of deep-subwavelength confinement in dielectric optical resonators

M. Khater, E. Kratschmer, S. Engelmann, 2017, Science Advances.

Bowtie photonic crystal with deep subwavelength mode confinement in a dielectric material

M. Khater, E. Kratschmer, S. Engelmann, 2017, 2017 Conference on Lasers and Electro-Optics (CLEO).

First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

Ali Khakifirooz, Karthik Balakrishnan, Sebastian U. Engelmann, 2014, 2014 IEEE International Electron Devices Meeting.

Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

Kevin K. H. Chan, D. Antoniadis, P. Hashemi, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

Molecular dynamics simulations of near-surface modification of polystyrene : Bombardment with Ar+ and Ar+/radical chemistries

S. Engelmann, C. Willson, R. Bruce, 2008 .