I. Sakai

发表

Sub-55 nm Etch Process Using Stacked-Mask Process

T. Ohiwa, I. Sakai, J. Abe, 2007 .

Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma

I. Sakai, H. Hayashi, K. Matsuda, 2015 .

Layer-by-layer etching of LaAlSiOx

I. Sakai, H. Hayashi, K. Matsuda, 2015 .

Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by in situ infrared reflection absorption spectroscopy

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

I. Sakai, J. Abe, H. Hayashi, 2021 .

Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

T. Ohiwa, I. Sakai, M. Sekine, 1998 .

Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma

T. Ohiwa, I. Sakai, H. Hayashi, 2016 .

Generation of obliquely incident ions using phase-shifted RF voltages applied on rod electrodes

I. Sakai, H. Hayashi, Yosuke Sato, 2016 .

Formation mechanism of sidewall striation in high-aspect-ratio hole etching

I. Sakai, J. Abe, H. Hayashi, 2019, Japanese Journal of Applied Physics.

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

I. Sakai, J. Abe, H. Hayashi, 2021 .

Highly selective removal of poly(methyl methacrylate) from polystyrene-block-poly(methyl methacrylate) by CO/H2 plasma etching

Hiroshi Yamamoto, Mitsuhiro Omura, Hisataka Hayashi, 2015 .

A new gas circulation RIE

T. Ohiwa, I. Sakai, K. Okumura, 1999, 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings (Cat No.99CH36314).

Selective etch of poly(methyl methacrylate) in block copolymer based on control of ion energy and design of gas chemistry for directed self assembly lithography

Hiroshi Yamamoto, Mitsuhiro Omura, Hisataka Hayashi, 2014 .