H. Hayashi

发表

Sub-55 nm Etch Process Using Stacked-Mask Process

T. Ohiwa, I. Sakai, J. Abe, 2007 .

Mechanism of C4F8 dissociation in parallel-plate-type plasma

H. Hayashi, S. Morishita, S. Noda, 1999 .

Highly selective etching of LaAlSiOx to Si using C4F8/Ar/H2 plasma

I. Sakai, H. Hayashi, K. Matsuda, 2015 .

Layer-by-layer etching of LaAlSiOx

I. Sakai, H. Hayashi, K. Matsuda, 2015 .

Chemical bond modification in porous SiOCH films by H2 and H2/N2 plasmas investigated by in situ infrared reflection absorption spectroscopy

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

Study of CO2 ashing for porous SiOCH film using 100 MHz/13.56 MHz dual frequency superimposed capacitive coupled plasma

H. Hayashi, K. Kurihara, Katsumi Yamamoto, 2017 .

H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics

T. Ohiwa, I. Sakai, H. Hayashi, 2011 .

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

R. Gottscho, H. Hayashi, N. Marchack, 2019, Japanese Journal of Applied Physics.

On-site tetrafluoroethylene gas generation from moderate-pressure pure tetrafluoromethane plasma reactor

I. Sakai, J. Abe, H. Hayashi, 2021 .

Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing

H. Hayashi, S. Morishita, S. Noda, 1998 .

Ion energy control in reactive ion etching using 1-MHz pulsed-DC square-wave-superimposed 100-MHz RF capacitively coupled plasma

T. Ohiwa, I. Sakai, H. Hayashi, 2016 .

Generation of obliquely incident ions using phase-shifted RF voltages applied on rod electrodes

I. Sakai, H. Hayashi, Yosuke Sato, 2016 .

Formation mechanism of sidewall striation in high-aspect-ratio hole etching

I. Sakai, J. Abe, H. Hayashi, 2019, Japanese Journal of Applied Physics.

Reactive ion etching process of SiO2 film using on-site synthesized C2F4 from CF4

I. Sakai, J. Abe, H. Hayashi, 2021 .

Highly selective removal of poly(methyl methacrylate) from polystyrene-block-poly(methyl methacrylate) by CO/H2 plasma etching

Hiroshi Yamamoto, Mitsuhiro Omura, Hisataka Hayashi, 2015 .

Characterization of Highly Selective SiO2/Si3N4 Etching of High-Aspect-Ratio Holes

H. Hayashi, Kazuaki Kurihara Kazuaki Kurihara, Makoto Sekine Makoto Sekine, 1996 .

Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate

H. Hayashi, M. Sekine, S. Morishita, 1999 .

Mechanism of Highly Selective SiO2 to Si3N4 Etching Using C4F8 + CO Magnetron Plasma

H. Hayashi, M. Sekine, 1999 .

Selective etch of poly(methyl methacrylate) in block copolymer based on control of ion energy and design of gas chemistry for directed self assembly lithography

Hiroshi Yamamoto, Mitsuhiro Omura, Hisataka Hayashi, 2014 .