N. Fujiwara

发表

Suppression of 193-nm photoresist deformation by H2 addition to fluorocarbon plasma in via-hole etching

K. Yonekura, K. Yoshikawa, Y. Fujiwara, 2007 .

High-aspect-ratio deep Si etching in SF6/O2 plasma. II. Mechanism of lateral etching in high-aspect-ratio features

N. Fujiwara, T. Maruyama, Takeshi Narukage, 2010 .

High-aspect-ratio deep Si etching in SF6/O2 plasma. I. Characteristics of radical reactions with high-aspect-ratio patterns

Nobuo Fujiwara, N. Fujiwara, T. Maruyama, 2010 .

Reduction Of Electron Shading Damage With Pulse-modulated ECR Plasma

S. Sakamori, N. Fujiwara, T. Maruyama, 1997, 2nd International Symposium on Plasma Process-Induced Damage.

Cold and Low-Energy Ion Etching (COLLIE)

N. Fujiwara, T. Shibano, K. Nishioka, 1989 .

Effect Plasma Transport on Etched Profiles with Surface Topography in Diverging Field Electron Cyclotron Resonance Plasma

N. Fujiwara, T. Maruyama, K. Tsukamoto, 1994 .

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Nobuo Fujiwara, Haruhiko Abe, N. Fujiwara, 2008 .

Etching yields of SiO2 by low energy CFx+ and F+ ions

N. Fujiwara, H. Nagata, M. Hirayama, 1993 .

Profile Control of poly-Si Etching in Electron Cyclotron Resonance Plasma

Nobuo Fujiwara, Masahiro Yoneda, N. Fujiwara, 1995 .

Etched profile distortions in high density electron cyclotron resonance plasma

N. Fujiwara, T. Maruyama, M. Yoneda, 1994 .

Effect of Electron Shading on Gate Oxide Degradation

S. Sakamori, N. Fujiwara, T. Maruyama, 1998 .

Transformation of Dense Contact Holes during SiO2 Etching

S. Sakamori, N. Fujiwara, H. Miyatake, 2003 .

Evaluation of Electron Shading Charge Buildup Damage Using Metal-Nitride-Oxide-Silicon Capacitors

S. Sakamori, N. Fujiwara, T. Maruyama, 1997 .

Pulsed Plasma Processing for Reduction of Profile Distortion Induced by Charge Buildup in Electron Cyclotron Resonance Plasma

N. Fujiwara, Masahiro Yoneda Masahiro Yoneda, Takahiro Maruyama Takahiro Maruyama, 1996 .

Charge accumulation effects on profile distortion in ECR plasma etching

N. Fujiwara, T. Maruyama, S. Ogino, 1996 .

4H-SiC Trench MOSFET with Bottom Oxide Protection

Shuhei Nakata, Nobuo Fujiwara, Masayuki Imaizumi, 2014 .

High Performance Electron Cyclotron Resonance Plasma Etching with Control of Magnetic Field Gradient

N. Fujiwara, M. Yoneda, K. Horie, 1991 .

Analysis of Fluorocarbon Deposition during SiO2 Etching

N. Fujiwara, T. Maruyama, Masahiro Yoneda Masahiro Yoneda, 1996 .

Effect of N2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching

N. Fujiwara, J. Matsumoto, Masahiro Yoneda Masahiro Yoneda, 1995 .

SiO2 Etching Characteristics with Low-Energy Ions Generated by Electron Cyclotron Resonance Plasma Using CF4 and NF3 Gases

N. Fujiwara, H. Miyatake, M. Yoneda, 1992 .

Mechanism of AlCu Film Corrosion

N. Fujiwara, Masahiro Yoneda Masahiro Yoneda, Hiroshi Miyatake Hiroshi Miyatake, 1997 .

Effects of Charge Build-up of Underlying Layer by High Aspect Ratio Etching

Hiroshi Miyatake, Nobuo Fujiwara, Kazumasa Yonekura, 1998 .

Reduction of Charge Build-up with High-Power Pulsed Electron Cyclotron Resonance Plasma

N. Fujiwara, T. Maruyama, Masahiro Yoneda Masahiro Yoneda, 1997 .

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET

N. Fujiwara, S. Nakata, S. Yamakawa, 2015 .

ECR Plasma Etching with Heavy Halogen Ions

N. Fujiwara, M. Yoneda, K. Nishioka, 1990 .

Low energy ECR plasma etching with a hybrid magnetic field

N. Fujiwara, T. Kato, K. Nishioka, 1990 .

Effects of plasma parameters on etching characteristics with ECR plasma

N. Fujiwara, T. Kato, M. Yoneda, 1989 .

Investigation of ash damage to ultralow-k inorganic materials

Nobuo Fujiwara, Masahiro Yoneda, Kazumasa Yonekura, 2004 .

Low-Damage Damascene Patterning Using Porous Inorganic Low-Dielectric-Constant Materials

K. Yonekura, N. Fujiwara, K. Goto, 2005 .

Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs

Yutaka Fukui, Nobuo Fujiwara, Masayuki Imaizumi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Mechanism of Reactive Ion Etching Lag in WSi2 Etching Using Electron Cyclotron Resonance Plasma

N. Fujiwara, T. Maruyama, K. Tsukamoto, 1994 .

Etching Characteristics of WSi2 with Pulsed-Electron Cyclotron Resonance Plasma

N. Fujiwara, T. Maruyama, Masahiro Yoneda Masahiro Yoneda, 1997 .

Mechanism of Reactive Ion Etching Lag for Aluminum Alloy Etching

N. Fujiwara, Tetsuo Satō, Masahiro Yoneda Masahiro Yoneda, 1995 .