S. Yamakawa

发表

6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

K. Kawahara, S. Hino, K. Sadamatsu, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

A 1.4 dB insertion-loss, 5 GHz transmit/receive switch utilizing novel depletion-layer-extended transistors (DETs) in 0.18 /spl mu/m CMOS process

S. Yamakawa, E. Taniguchi, A. Furukawa, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Influence of recovery characteristics on switching behavior of SiC MOSFETs

Y. Nakao, T. Iwamatsu, S. Nakata, 2020, Japanese Journal of Applied Physics.

Mechanism of Depletion-Mode TDDB for 4H-SiC MOS Structure

S. Hino, T. Iwamatsu, S. Tomohisa, 2017, IEEE Transactions on Device and Materials Reliability.

Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

S. Yamakawa, M. Furuhashi, N. Yutani, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

Y. Nakao, S. Nakata, S. Yamakawa, 2014 .

Effects of Eddy Current on Characteristics of Spiral Inductors on Silicon

Satoshi Yamakawa, Kazuyasu Nishikawa, Kenji Shintani, 2009 .

Characteristics of transmission lines on silicon-on-metal and silicon-on-quartz

S. Yamakawa, K. Nishikawa, K. Shintani, 2007 .

Reaction and formation of La-silicate gate dielectrics on SiC substrates

Sugii, H. Iwai, S. Yamakawa, 2015 .

Epitaxial Si1−x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

S. Yamakawa, K. Sugihara, T. Inagaki, 2000 .

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .

Practical applications of SiC-MOSFETs and further developments

Shingo Tomohisa, Satoshi Yamakawa, Masayuki Furuhashi, 2016 .

Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

S. Nakata, S. Yamakawa, Shigehisa Yamamoto, 2013 .

Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

S. Yamakawa, T. Tominaga, H. Sumitani, 2014 .

Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET

S. Hino, S. Tomohisa, S. Yamakawa, 2018, Materials Science Forum.

4H-SiC Trench MOSFET with Bottom Oxide Protection

Shuhei Nakata, Nobuo Fujiwara, Masayuki Imaizumi, 2014 .

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

S. Nakata, S. Yamakawa, Shigehisa Yamamoto, 2014 .

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET

N. Fujiwara, S. Nakata, S. Yamakawa, 2015 .

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

S. Yamakawa, M. Imaizumi, H. Sumitani, 2015 .

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .

Determination of intrinsic phonon-limited mobility and carrier transport property extraction of 4H-SiC MOSFETs

T. Iwamatsu, S. Yamakawa, K. Kita, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Remarkable advances in SiC power device technology for ultra high power systems

S. Hino, S. Nakata, S. Yamakawa, 2013, 2013 IEEE International Electron Devices Meeting.

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode

T. Iwamatsu, S. Hino, S. Nakata, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

T. Iwamatsu, S. Yamakawa, K. Kita, 2019, Japanese Journal of Applied Physics.

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Passivation of SiO2/SiC interface with La2O3 capped oxidation

H. Iwai, S. Yamakawa, N. Sugii, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs

K. Kawahara, S. Hino, K. Sadamatsu, 2018, Materials Science Forum.

Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs

Yutaka Fukui, Nobuo Fujiwara, Masayuki Imaizumi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

Shuhei Nakata, Kenji Hamada, Masayuki Imaizumi, 2014 .

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

K. Kawahara, S. Nakata, S. Yamakawa, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

K. Kawahara, S. Nakata, S. Yamakawa, 2015 .