K. Romanjek

发表

Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

M. Jurczak, G. Ghibaudo, O. Weber, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible Tunnel FET performance

F. Andrieu, S. Deleonibus, B. Previtali, 2008, 2008 IEEE International Electron Devices Meeting.

Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster

A. Toffoli, O. Faynot, T. Skotnicki, 2006, 2006 IEEE international SOI Conferencee Proceedings.

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

G. Ghibaudo, T. Skotnicki, R. Gwoziecki, 2006, 2006 International Electron Devices Meeting.

Germanium on insulator and new 3D architectures opportunities for integration

J. Hartmann, P. Batude, M. Vinet, 2010 .

SiGe channel p-MOSFETs scaling-down

G. Ghibaudo, F. Andrieu, T. Ernst, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Improved split C-V method for effective mobility extraction in sub-0.1-/spl mu/m Si MOSFETs

G. Ghibaudo, F. Andrieu, T. Ernst, 2004, IEEE Electron Device Letters.

Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements

E. Augendre, K. Romanjek, C. Le Royer, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Experimental Evidence of Sidewall Enhanced Transport Properties of Mesa-Isolated (001) Germanium-On-Insulator pMOSFETs

H. Grampeix, J. Hartmann, F. Allain, 2009, IEEE Transactions on Electron Devices.

LOW FREQUENCY NOISE IN SUB-0.1μmSiGepMOSFETs, CHARACTERISATION AND MODELING

G. Ghibaudo, T. Ernst, K. Romanjek, 2004 .

1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

G. Ghibaudo, K. Romanjek, X. Mescot, 2019, Applied Physics Letters.

Thermal stability of Mg2Si0.55Sn0.45 for thermoelectric applications

K. Romanjek, Y. Thimont, B. Malard, 2020, Journal of Alloys and Compounds.

Thermal stability of Mg 2 Si 0.55 Sn 0.45 for thermoelectric applications

K. Romanjek, Y. Thimont, B. Malard, 2020 .

Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below

K. Romanjek, A. Cros, B. Dumont, 2008, 2007 IEEE International Conference on Microelectronic Test Structures.

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

H. Grampeix, J. Hartmann, P. Batude, 2011 .

Process Scalability for Promising Si Based Thermoelectric Materials

K. Romanjek, G. Bernard-Granger, C. Navone, 2015 .

Sintered Nano-Ag as Joining Material for Thermoelectric Modules

K. Romanjek, Klas Brinkfeldt, Dag Andersson, 2014 .

Microstructure investigations and thermoelectrical properties of an N-type magnesium–silicon–tin alloy sintered from a gas-phase atomized powder

K. Romanjek, G. Bernard-Granger, C. Navone, 2015 .

High-Performance Silicon–Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

K. Romanjek, L. Aixala, K. Romanjek, 2015, Journal of Electronic Materials.

Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

G. Ghibaudo, Frederic Boeuf, Thomas Skotnicki, 2004 .

Manufacturing and performances of silicide-based thermoelectric modules

K. Romanjek, A. Dauscher, Y. Thimont, 2021 .

High temperature solar thermoelectric generator – Indoor characterization method and modeling

K. Romanjek, Julia Simon, K. Kusiaku, 2015 .

Improved extraction of GIDL in FDSOI devices for proper junction quality analysis

M. Mouis, X. Garros, P. Batude, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A printed proximity-sensing surface based on organic pyroelectric sensors and organic thin-film transistor electronics

Joost A. Fijn, K. Romanjek, E. Cantatore, 2022, Nature Electronics.

Improved GeOI substrates for pMOSFET off-state leakage control

Emmanuel Augendre, Sorin Cristoloveanu, Eric Guiot, 2009 .

High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

X. Garros, G. Reimbold, Emmanuel Augendre, 2009 .

105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers

G. Le Carval, M. Vinet, S. Deleonibus, 2008 .

Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity

M. Vinet, J.-M. Hartmann, E. Augendre, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Investigation of 1/f noise in germanium-on-insulator 0.12 μm PMOS transistors from weak to strong inversion

Emmanuel Augendre, K. Romanjek, M. Valenza, 2009 .

GeOI and SOI 3D monolithic cell integrations for high density applications

X. Garros, O. Rozeau, O. Faynot, 2006, 2009 Symposium on VLSI Technology.

Magnetoresistance mobility measurements in sub 0.1 /spl mu/m Si MOSFETs

G. Ghibaudo, Y.M. Meziani, J. Lusakowski, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).