O. Gluschenkov

发表

Design of high performance PFETs with strained si channel and laser anneal

J. Holt, D. Schepis, R. Amos, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

C. Lavoie, K. Chan, N. Rovedo, 2007, 2007 IEEE Symposium on VLSI Technology.

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics

O. Gluschenkov, K.K. Chan, R.M. Sicina, 2003, IEEE Electron Device Letters.

Process optimizations for NBTI/PBTI for future replacement metal gate technologies

Barry P. Linder, T. Ando, M. Wang, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy

S. G. Bishop, O. Gluschenkov, J. Myoung, 1996 .

Application of electron holography to analysis of submicron structures

A. Domenicucci, O. Gluschenkov, M. Gribelyuk, 2008 .

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Ying Li, Anita Madan, Oleg Gluschenkov, 2008 .

Microloading Effect in RTCVD Reactors

O. Gluschenkov, A. Chakravarti, I. McStay, 2002 .

Ti and NiPt/Ti liner silicide contacts for advanced technologies

F. Chafik, S. Jain, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy

I. Robinson, O. Gluschenkov, J. Myoung, 1998 .

Advanced BEOL Materials, Processes, and Integration to Reduce Line Resistance of Damascene Cu, Co, and Subtractive Ru Interconnects

A. Simon, D. Edelstein, A. Uedono, 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

B. Haran, J. Demarest, O. Gluschenkov, 2016, IEEE Electron Device Letters.

Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability

H. Jagannathan, J. Demarest, O. Gluschenkov, 2017, 2017 Symposium on VLSI Technology.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy

O. Gluschenkov, J. Myoung, K. Kim, 1999 .

Crack velocities in freshwater and saline ice

V. F. Petrenko, O. Gluschenkov, 1996 .

Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy

S. G. Bishop, O. Gluschenkov, J. Myoung, 1997 .

Stimulated emission at 300 K from photopumped GaN grown by plasma-assisted molecular beam epitaxy with an inductively coupled plasma source

O. Gluschenkov, J. Myoung, J. Eden, 1997 .

Invited) Laser Annealing in CMOS Manufacturing

H. Jagannathan, O. Gluschenkov, 2018 .

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

Jie Yang, Terence B. Hook, Andreas Knorr, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Overview of Recent Program on Mechanical Properties of Sea Ice

V. F. Petrenko, O. Gluschenkov, D. Cole, 1995 .

High quality p-type GaN films grown by plasma-assisted molecular beam epitaxy

O. Gluschenkov, J. Myoung, K. Kim, 1996 .

Growth and characterization of AlGaN/GaN heterostructures with multiple quantum wells by PAMBE

S. G. Bishop, O. Gluschenkov, J. Myoung, 1996 .

NFET effective work function improvement via stress memorization technique in replacement metal gate technology

Y. Liu, S. Jain, S. Samavedam, 2013, 2013 Symposium on VLSI Technology.