J. Maiz

发表

Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents

J. Maiz, 1989 .

Measurements and analysis of SER tolerant latch in a 90 nm dual-Vt CMOS process

K. Soumyanath, S. Borkar, J. Tschanz, 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction

J. R. Patel, N. Tamura, K. Gadre, 2006 .

Impact of body bias on alpha- and neutron-induced soft error rates of flip-flops

K. Soumyanath, J. Tschanz, T. Karnik, 2004, 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525).

A resistance change methodology for the study of electromigration in Al-Si interconnects

J. Maiz, I. Segura, 1988, 26th Annual Proceedings Reliability Physics Symposium 1988.

Adhesion studies in integrated circuit interconnect structures

J. Maiz, J. Molina-Aldareguia, I. Ocaña, 2007 .

Electromigration lifetime and critical void volume

T. Marieb, Z. Suo, J. Maiz, 2004 .

Cross-sectional nanoindentation: a new technique for thin film interfacial adhesion characterization

José M. Martínez-Esnaola, Antonio Martín-Meizoso, D. Pantuso, 1999 .

Simulation of Cross-Sectional Nanoindentation in Interconnect Structures with Cohesive Elements

J. Maiz, I. Ocaña, J. Martínez-Esnaola, 2006 .

Effect of passivation on stress relaxation in electroplated copper films

Rui Huang, P. Ho, J. Maiz, 2006 .

Effects of Passivation Layer on Stress Relaxation and Mass Transport in Electroplated Cu Films

Paul S. Ho, J. Maiz, Rui Huang, 2004 .

Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents

J. Maiz, 1989, 27th Annual Proceedings., International Reliability Physics Symposium.

Electromigration Testing of Ti/Al-Si Metallization for Integrated Circuits

J. Maiz, B. Sabi, 1987, 25th International Reliability Physics Symposium.

Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements

Paul S. Ho, J. Maiz, Rui Huang, 2005 .

In situ observations of dc and ac electromigration in passivated Al lines

J. Maiz, E. Castaño, Paul A. Flinn, 1991 .

Electromigration-Induced Plastic Deformation in Cu Damascene Interconnect Lines as Revealed by Synchrotron X-Ray Microdiffraction

J. R. Patel, N. Tamura, K. Gadre, 2006 .

Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0.25-/spl mu/m to 90-nm generation

J. Tschanz, T. Karnik, P. Hazucha, 2003, IEEE International Electron Devices Meeting 2003.

A New Technique for the Characterization of the Adhesion in Integrated Circuit Interconnect Structures

J. Maiz, Jun He, J. Martínez-Esnaola, 2005 .

Fracture characterization in patterned thin films by cross-sectional nanoindentation

José M. Martínez-Esnaola, J. Maiz, I. Ocaña, 2006 .

BTI reliability of 45 nm high-K + metal-gate process technology

G. Dewey, J. Kavalieros, M. Metz, 2008, 2008 IEEE International Reliability Physics Symposium.

Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices

B. Narasimham, N. Seifert, V. Zia, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Microprocessor Power Optimization Through Multi-Performance

Naoya Torii, Ali Keshavarzi, Masahiko Takenaka, 2004 .