A. Kaneko

FinFET Process and Integration Technology for High Performance LSI in 22 nm node and beyond

Y. Tsunashima, H. Kawasaki, A. Yagishita, 2007, 2007 International Workshop on Junction Technology.

Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond

H. Ishiuchi, N. Aoki, K. Ishimaru, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Sub-micron Cell Pitch 30 V N-channel UMOSFET with Ultra Low On-resistance

A. Kaneko, Y. Murase, K. Kobayashi, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Y. Tsunashima, M. Takayanagi, M. Sato, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Careful examination on the asymmetric Vfb shift problem for poly-Si/HfSiON gate stack and its solution by the Hf concentration control in the dielectric near the poly-Si interface with small EOT expense

M. Takayanagi, A. Kaneko, K. Eguchi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

K. Yahashi, H. Ishiuchi, N. Aoki, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics

M. Takayanagi, S. Inumiya, M. Suzuki, 2002, Digest. International Electron Devices Meeting,.

Nitrogen profile control by plasma nitridation technique for poly-Si gate HfSiON CMOSFET with excellent interface property and ultra-low leakage current

K. Sekine, S. Inumiya, Y. Tsunashima, 2003, IEEE International Electron Devices Meeting 2003.

High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

Y. Tsunashima, K. Yahashi, K. Matsuo, 2006, 2006 International Electron Devices Meeting.

Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations

H. Ishiuchi, N. Aoki, K. Ishimaru, 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.

Improvement ofDriveCurrent inBulk-FinFET using Full3D Process/DeviceSimulations

H. Kawasaki, A. Yagishita, K. Ishimaru, 2006 .