M. Lee

发表

Reduced QCSE in InGaN-based LEDs by patterned sapphire substrates with enlarging the diameter of hexagonal hole

Ming-Lun Lee, Vin-Cent Su, Chieh-Hsiung Kuan, 2015, Microtechnologies for the New Millennium.

Optical properties of Mn in regrown GaN-based epitaxial layers

M. Lee, J. Sheu, P. Chen, 2012 .

White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids.

M. Lee, J. Sheu, P. C. Chen, 2015, Optics express.

Characterization of Si implants in p-type GaN

S. Chang, M. Lee, J. Sheu, 2002 .

Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

M. Lee, J. Sheu, Fu-Bang Chen, 2015, Optics express.

Effect of Thermal Annealing on the GaN Metal-Oxide-Semiconductor Capacitors with Gallium Oxide Gate Layer

M. Lee, J. Sheu, S. Tu, 2010 .

Effects of Thermal Annealing on Si-Implanted GaN Films Grown at Low Temperature by Metallorganic Vapor Phase

M. L. Lee, M. Lee, J. Sheu, 2005 .

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

C. Q. Lee, M. Lee, J. Sheu, 2019, Solar Energy Materials and Solar Cells.

Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure

S. Chang, M. Lee, Y. Su, 2003 .

Planar GaN n ¿ - p photodetectors formed by Si implantation into p-GaN

S. Chang, M. Lee, Y. Su, 2002 .

Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates.

Vin-Cent Su, Chieh-Hsiung Kuan, Ray-Ming Lin, 2013, Optics express.

InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

M. Lee, R. Lin, J. Sheu, 2010 .

Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads

M. Lee, J. Sheu, W. Lai, 2008 .

Cobalt Oxide Nanofilms on n-GaN Working Electrodes for Photoelectrochemical Water Splitting

M. Lee, J. Sheu, P. Liao, 2020 .

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

Jenn-Shyong Hwang, M. Lee, W. Chou, 1994 .

Vertical InGaN-based green-band solar cells operating under high solar concentration up to 300 suns.

Jinn-Kong Sheu, Yu-Hsiang Yeh, M. Lee, 2014, Optics express.

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates.

M. Lee, J. Sheu, P. C. Chen, 2013, Optics express.

Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

M. Lee, J. Sheu, G. Chi, 2006 .

Photoelectrochemical Generation of Hydrogen and Formic Acid Using GaN Films Decorated with TiO2/Ag Nanoparticles Composite Structure as Photoelectrodes

M. Lee, J. Sheu, P. Liao, 2020 .

Enhancing Current Collection for Blue Band InGaN-Based Photovoltaic Devices with Shallow Mesa

M. Lee, J. Sheu, Chih-Ciao Yang, 2016 .

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

M. Lee, J. Sheu, W. Lai, 2017, Optics express.

Theoretical Investigation of Efficient Green Tunnel-Junction Light-Emitting Diodes

M. Lee, J. Sheu, Y. Kuo, 2017, IEEE Electron Device Letters.

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

S. Chang, M. Lee, Y. Su, 2003 .

Optical and Electrical Properties of µ-Slice InGaN/GaN Light Emitting Diodes Shaped by Focused Ion Beam Process

M. Lee, J. Sheu, W. Lai, 2011 .

Solar-Blind p-i-n Photodetectors Formed on ${\rm SiO}_{2}$-Patterned n-GaN Templates

M. Lee, S. Tu, Y. Yeh, 2012, IEEE Journal of Quantum Electronics.

High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions

M. Lee, J. Sheu, Pingfeng Chi, 2022, ACS Photonics.

Stable Photoelectrochemical Water Splitting Using p–n GaN Junction Decorated with Nickel Oxides as Photoanodes

C. Q. Lee, M. Lee, J. Sheu, 2021, The Journal of Physical Chemistry C.

AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

S. Chang, M. Lee, Y. Su, 2005 .

Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation

M. Lee, J. Sheu, G. Chi, 2006 .

Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

M. L. Lee, S. Chang, M. Lee, 2003 .

Effect of KOH-Treatment at Sol–Gel Derived NiOx Film on GaN Photoanodes in Hydrogen Generation

M. Lee, J. Sheu, P. Liao, 2021, ACS Applied Energy Materials.

GaN-Based UV Light-Emitting Diodes With a Green Indicator Through Selective-Area Photon Recycling

M. Lee, J. Sheu, Y. Yeh, 2016, IEEE Transactions on Electron Devices.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

M. Lee, J. Sheu, W. Lai, 2012, Optics express.

Vertical InGaN light-emitting diode with a retained patterned sapphire layer.

M. Lee, J. Sheu, W. Lai, 2012, Optics express.

Investigation of low frequency electrolytic solution behavior with an accurate electrical impedance method

V. Su, M. Lee, C. Kuan, 2017 .

GaN intermediate band solar cells with Mn-doped absorption layer

M. Lee, J. Sheu, P. Chen, 2018, Scientific Reports.

Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

M. Lee, J. Sheu, P. Chen, 2013 .

Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy

M. Lee, J. Sheu, P. Chen, 2013 .

Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection.

M. Lee, J. Sheu, W. Lai, 2011, Optics express.

Nonalloyed Cr/Au-based Ohmic contacts to n-GaN

M. Lee, J. Sheu, Chi-Chang Hu, 2007 .

Effects of FeOOH Nanofilms on Photoelectrochemical Reaction Using Gallium Nitride as Photoelectrodes

M. Lee, J. Sheu, Yu-Tsun Yao, 2022, ACS Applied Energy Materials.

Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling

M. Lee, J. Sheu, W. Lai, 2011 .

Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN p-n junction layers

M. Lee, J. Sheu, Feng-Wu Lin, 2022, Journal of Alloys and Compounds.

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Jinn-Kong Sheu, Chih-Wei Yang, Feng-Wen Huang, 2010 .

Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers

Jinn-Kong Sheu, Wei-Chih Lai, Shang-Ju Tu, 2009 .

Investigation of the Carrier Dynamic in GaN-Based Cascade Green Light-Emitting Diodes Using the Very Fast Electrical–Optical Pump–Probe Technique

Jinn-Kong Sheu, Jin-Wei Shi, F.-M Kuo, 2011, IEEE Transactions on Electron Devices.

GaN-Based Dual-Color LEDs With $p$-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities

M. Lee, J. Sheu, Y. Yeh, 2013, IEEE Transactions on Electron Devices.

Planar GaN-Based Blue Light-Emitting Diodes With Surface p-n Junction Formed by Selective-Area Si–Ion Implantation

M. Lee, J. Sheu, Y. Yeh, 2017, IEEE Transactions on Electron Devices.

Design of GaN-Based Multicolor Tunnel-Junction Light-Emitting Diodes

M. Lee, J. Sheu, Y. Kuo, 2018, IEEE Transactions on Electron Devices.

Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth

M. Lee, J. Sheu, Y. Yeh, 2019, Scientific Reports.

Schottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer

M. Lee, J. Sheu, S. Lin, 2006 .

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

M. Lee, J. Sheu, W. Lai, 2010 .

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

M. L. Lee, S. Chang, M. Lee, 2003 .

Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

M. Lee, J. Sheu, W. Lai, 2005 .

Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer

M. Lee, J. Sheu, P. Chen, 2016 .

NiOx nanoparticles as active water splitting catalysts for the improved photostability of a n-GaN photoanode

M. Lee, J. Sheu, P. Liao, 2020 .

Gallium nitride-based light-emitting diodes with embedded air voids grown on Ar-implanted AlN/sapphire substrate

M. Lee, J. Sheu, W. Lai, 2012 .

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1–xN-Based UV Light-Emitting Diodes

M. Lee, J. Sheu, W. Lai, 2016, IEEE Transactions on Electron Devices.

Investigation of modulation‐doped GaAs/AlGaAs single quantum well by photoreflectance

M. Lee, W. Chou, S. Tyan, 1995 .

Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

V. Su, M. Lee, Y. You, 2014, Nanoscale Research Letters.

GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ $\hbox{SiH}_{\bf 4}$ Treatment Process During Epitaxial Growth

S. Chang, M. Lee, J. Sheu, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps

M. Lee, J. Sheu, P. Chen, 2012 .

Vertical InGaN light-emitting diodes with Ag paste as bonding layer

Jinn-Kong Sheu, Ming-Lun Lee, Che-Kang Hsu, 2012, Microelectron. Reliab..

Vertical InGaN light-emitting diodes with a sapphire-face-up structure.

Jinn-Kong Sheu, Wei-Chih Lai, Shang-Ju Tu, 2012, Optics express.

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.

M. Lee, J. Sheu, W. Lai, 2011, Optics express.

Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer

Jinn-Kong Sheu, Wei-Chih Lai, Shoou-Jinn Chang, 2010, IEEE Journal of Quantum Electronics.

Light-emitting diodes with surface gallium nitride p–n homojunction structure formed by selective area regrowth

M. Lee, J. Sheu, Y. Yeh, 2019, Scientific Reports.

Selective Growth of AlGaN-Based p-i-n UV Photodiodes Structures

M. Lee, J. Sheu, P. Chen, 2014, IEEE Journal of Selected Topics in Quantum Electronics.

Investigation on Modulation Speed of Photon-Recycling White Light-Emitting Diodes With Vertical-Conduction Structure

M. Lee, J. Sheu, Fu-Bang Chen, 2019, Journal of Lightwave Technology.

The Mechanism of Carrier Transportation in a Superlattice Infrared Photodetector Sandwiched by Front and Rear Barriers

M. Lee, C. Kuan, T. Sun, 2012, International Journal of Electrochemical Science.

Double-barrier Superlattice Infrared Photodetector Integrated with Multiple Quantum-Well Infrared Photodetector to Improve Performance

M. Lee, C. Kuan, D. Feng, 2012, International Journal of Electrochemical Science.

Warm-white light-emitting diode with high color rendering index fabricated by combining trichromatic InGaN emitter with single red phosphor.

M. Lee, J. Sheu, Fu-Bang Chen, 2015, Optics express.

Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2

M. Lee, Y. You, R. Lin, 2015 .

InGaN-based epitaxial films as photoelectrodes for hydrogen generation through water photoelectrolysis and CO2 reduction to formic acid

M. Lee, J. Sheu, W. Lai, 2017 .

Surface Plasmon-Enhanced GaN Metal–Insulator–Semiconductor Ultraviolet Detectors With Ag Nanoislands Embedded in a Silicon Dioxide Gate Layer

Yu-Cheng Lin, M. Lee, J. Sheu, 2014, IEEE Journal of Selected Topics in Quantum Electronics.

Seed-Assisted Synthesis of Ni(OH)2 Nanosheets on InGaN Films as Photoelectrodes toward Solar-Driven Water Splitting

Ting Huang, M. Lee, J. Sheu, 2023, ACS Applied Energy Materials.

Improved Performance of GaN Photoelectrodes from the Facile Fabrication of a Binder-Free Catalyst: Ni(OH)2 Nanosheets

M. Lee, J. Sheu, Yu-Tsun Yao, 2022, ACS Applied Energy Materials.

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting.

M. Lee, S. Tu, Shu Yen Liu, 2013, Optics express.

High-responsivity photodetectors made of indium selenide with visible to near-infrared photodetection

M. Lee, Yu-Tsun Yao, Yung-Lan Chuang, 2024, Chinese Journal of Physics.